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ContactIXYS / Littelfuse(10406)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Applications | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Power - Max | Power Dissipation-Max | Reverse Voltage | Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Number of Inputs | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Input | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| MWI75-12E8 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2007 | /files/ixys-mki7512e8-datasheets-7453.pdf | E3 | 11 | 24 Weeks | 3 | e3 | Tin (Sn) - with Nickel (Ni) barrier | 500W | UPPER | PIN/PEG | MWI | 19 | 6 | Insulated Gate BIP Transistors | R-XUFM-P11 | 5.7nF | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 500W | 1.2kV | 210 ns | 2.5V | 130A | Standard | 1200V | 730 ns | 20V | 1.1mA | 2.5V @ 15V, 75A | NPT | No | 5.7nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MIAA20WD600TMH | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2007 | /files/ixys-miaa20wd600tmh-datasheets-8032.pdf | MiniPack2 | 23 | 2 | yes | UL RECOGNIZED | 100W | UPPER | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | 900pF | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 100W | 1.6kV | 600V | 80 ns | 2.7V | 29A | Single Phase Bridge Rectifier | 315 ns | 1.1mA | 2.7V @ 15V, 20A | NPT | Yes | 0.9nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN200N60A2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2003 | /files/ixys-ixgn200n60a2-datasheets-8279.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 38.000013g | 4 | yes | Nickel (Ni) | 700W | UPPER | UNSPECIFIED | IXG*200N60 | 4 | 1 | 9.9nF | 60 ns | 360 ns | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 700W | 600V | 1.35V | 120 ns | 600V | 200A | Standard | 950 ns | 50μA | 1.35V @ 15V, 100A | PT | No | 9.9nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUBW20-06A7 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2001 | /files/ixys-mubw2006a7-datasheets-0199.pdf | E2 | 24 | 20 Weeks | 2 | yes | LOW SWITCHING LOSS, LOW SATURATION VOLTAGE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 125W | UPPER | UNSPECIFIED | NOT SPECIFIED | MUBW | NOT SPECIFIED | 7 | Not Qualified | 1.1nF | SILICON | Three Phase Inverter with Brake | ISOLATED | POWER CONTROL | N-CHANNEL | 125W | 1.6kV | 600V | 110 ns | 2.3V | 35A | Three Phase Bridge Rectifier | 330 ns | 600μA | 2.3V @ 15V, 20A | NPT | Yes | 1.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTC120WX55GD-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | 28 Weeks | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBN42N170A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | BIMOSFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/ixys-ixbn42n170a-datasheets-0766.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 4 | yes | Nickel (Ni) | 312W | UPPER | UNSPECIFIED | IXB*42N170 | 4 | 1 | Insulated Gate BIP Transistors | 3.5nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 312W | 1.7kV | 63 ns | 1.7kV | 42A | Standard | 1700V | 420 ns | 20V | 5.5V | 50μA | 6V @ 15V, 21A | No | 3.5nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MID75-12A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Chassis Mount, Panel, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2000 | /files/ixys-mid7512a3-datasheets-0918.pdf | Y4-M5 | 94mm | 30mm | 34mm | 5 | 24 Weeks | 7 | yes | EAR99 | UL RECOGNIZED | 370W | UPPER | UNSPECIFIED | MID | 7 | 1 | Insulated Gate BIP Transistors | R-XUFM-X5 | 3.3nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 370W | 1.2kV | 1.2kV | 170 ns | 1.2kV | 90A | Standard | 1200V | 570 ns | 3 V | 20V | 4mA | 2.7V @ 15V, 50A | NPT | No | 3.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPC7701KTR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | 70°C | 0°C | 30nA | ROHS3 Compliant | 2014 | 48-LQFP | 12 Weeks | 35Ohm | 48 | Buffered | Ultrasound | 16 | 2.3W | 48-LQFP (7x7) | SPST | 5 μs | 5 μs | 100V | Single | 40V | 16 | 16 | 35Ohm | 1:1 | 3V~5.5V | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH15N80Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh15n80q-datasheets-2059.pdf | 800V | 15A | TO-247-3 | Lead Free | 3 | 8 Weeks | 600mOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 27ns | 16 ns | 53 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 250 ns | 60A | 1000 mJ | 800V | N-Channel | 4300pF @ 25V | 600m Ω @ 7.5A, 10V | 4.5V @ 4mA | 15A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN600N04T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™, TrenchT2™ | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixtn600n04t2-datasheets-2276.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 4 | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | No | 200A | NICKEL | UPPER | UNSPECIFIED | 4 | 940W | 1 | FET General Purpose Power | 40V | 600A | 40 ns | 20ns | 250 ns | 90 ns | 600A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1 | 940W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.05m Ω @ 100A, 10V | 3.5V @ 250μA | 600A Tc | 590nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM120-0075P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/ixys-gwm1200075p3-datasheets-4144.pdf | ISOPLUS-DIL™ | 17 | 17 | yes | EAR99 | DUAL | FLAT | NOT SPECIFIED | GWM120 | NOT SPECIFIED | 6 | Not Qualified | 118A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 125A | 0.0045Ohm | 6 N-Channel (3-Phase Bridge) | 5.5m Ω @ 60A, 10V | 4V @ 1mA | 100nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM220-004P3-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/ixys-gwm220004p3smd-datasheets-5786.pdf | 17-SMD, Gull Wing | 17 | 17 | EAR99 | DUAL | GWM220 | 17 | 6 | Not Qualified | 140 ns | 180A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.6mOhm | 40V | 6 N-Channel (3-Phase Bridge) | 4V @ 1mA | 94nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTL2X180N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Trench™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixtl2x180n10t-datasheets-0330.pdf | ISOPLUSi5-Pak™ | Lead Free | 5 | 30 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | 150W | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 150W | 2 | FET General Purpose Power | Not Qualified | 54ns | 31 ns | 42 ns | 100A | SILICON | COMPLEX | ISOLATED | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 0.0074Ohm | 100V | 2 N-Channel (Dual) | 6900pF @ 25V | 7.4m Ω @ 50A, 10V | 4.5V @ 250μA | 151nC @ 10V | Standard |
