IXYS(5222)

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Series Mount Mounting Type Operating Temperature Packaging Moisture Sensitivity Level (MSL) Technology Operating Mode RoHS Status Published Datasheet Package / Case Number of Terminations Number of Pins Pbfree Code ECCN Code Additional Feature Peak Reflow Temperature (Cel) Pin Count Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Number of Elements Qualification Status Rise Time Fall Time (Typ) Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Transistor Element Material Case Connection Power Dissipation-Max Avalanche Energy Rating (Eas) Drain to Source Breakdown Voltage FET Type Input Capacitance (Ciss) (Max) @ Vds Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IXFK88N20Q IXFK88N20Q IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2003 https://pdf.utmel.com/r/datasheets/ixys-ixfk88n20q-datasheets-4443.pdf TO-264-3, TO-264AA 3 3 yes EAR99 AVALANCHE RATED NOT SPECIFIED 3 Single NOT SPECIFIED 500W 1 Not Qualified 20ns 15 ns 61 ns 88A 30V SILICON DRAIN 500W Tc 2500 mJ 200V N-Channel 4150pF @ 25V 30m Ω @ 44A, 10V 4V @ 4mA 88A Tc 146nC @ 10V 10V ±30V

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