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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Nominal Input Voltage | Current | Reach Compliance Code | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Output Peak Current Limit-Nom | Built-in Protections | Driver Number of Bits | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUP53P06-20-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup53p0620e3-datasheets-0883.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 14 Weeks | 6.000006g | No SVHC | 19.5MOhm | 3 | EAR99 | No | 3 | 1 | Single | 3.1W | Other Transistors | 10 ns | 7ns | 40 ns | 70 ns | 9.2A | 20V | 60V | -1V | 3.1W Ta 104.2W Tc | TO-220AB | -60V | P-Channel | 3500pF @ 25V | 19.5m Ω @ 30A, 10V | 3V @ 250μA | 9.2A Ta 53A Tc | 115nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP60N06-12P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup60n0612pge3-datasheets-3346.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 6.000006g | 12mOhm | 3 | EAR99 | No | 3 | 1 | Single | 3.25W | 1 | FET General Purpose Power | 11 ns | 11ns | 8 ns | 16 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.25W Ta 100W Tc | TO-220AB | 80A | 80 mJ | N-Channel | 1970pF @ 30V | 12m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4920EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sq4920eyt1ge3-datasheets-4927.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 12 Weeks | 506.605978mg | Unknown | 17.5mOhm | 8 | No | 4.4W | 2 | Dual | 4.4W | 2 | 8-SO | 1.465nF | 7 ns | 10ns | 8 ns | 25 ns | 8A | 20V | 30V | 2V | 4.4W | 14.5mOhm | 2 N-Channel (Dual) | 1465pF @ 15V | 14.5mOhm @ 6A, 10V | 2.5V @ 250μA | 8A | 30nC @ 10V | Logic Level Gate | 14.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N04-37P-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0437pt4e3-datasheets-3671.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 37mOhm | 8A | 40V | 2W Ta 10.8W Tc | N-Channel | 640pF @ 20V | 37m Ω @ 5A, 10V | 2.5V @ 250μA | 5.4A Ta 8A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ570EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj570ept1ge3-datasheets-6239.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 100V | 27W | N and P-Channel | 650pF @ 25V 600pF @ 25V | 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V | 2.5V @ 250μA | 15A Tc 9.5A Tc | 20nC @ 10V, 15nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1489EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1489edht1ge3-datasheets-8490.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 15 Weeks | 7.512624mg | 48mOhm | 6 | EAR99 | No | DUAL | GULL WING | 6 | 1 | Single | 156W | 1 | Other Transistors | 90 ns | 170ns | 630 ns | 690 ns | 2A | 5V | SILICON | SWITCHING | 8V | 2.8W Tc | 2A | -8V | P-Channel | 48m Ω @ 3A, 4.5V | 700mV @ 250μA | 2A Tc | 16nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2337ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq2337est1ge3-datasheets-7871.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 3 | 3W | 1 | SOT-23-3 (TO-236) | 2.2A | 20V | 80V | 3W Tc | P-Channel | 620pF @ 30V | 290mOhm @ 1A, 4.5V | 2.5V @ 250μA | 2.2A Tc | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP70N03-09BP-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70n0309bpe3-datasheets-3111.pdf | TO-220-3 | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 93W | 1 | FET General Purpose Power | 10 ns | 8ns | 9 ns | 25 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 93W Tc | TO-220AB | 70A | 200A | 0.009Ohm | 30V | N-Channel | 1500pF @ 25V | 800 mV | 9m Ω @ 30A, 10V | 2V @ 250μA | 70A Tc | 19nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISA14DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sisa14dnt1ge3-datasheets-8389.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 5.1mOhm | yes | EAR99 | DUAL | C BEND | 240 | 40 | 1 | S-PDSO-C5 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.57W Ta 26.5W Tc | 80A | 11.25 mJ | N-Channel | 1450pF @ 15V | 5.1m Ω @ 10A, 10V | 2.2V @ 250μA | 20A Tc | 29nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3445DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3445dvt1ge3-datasheets-6159.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 19.986414mg | No SVHC | 42MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | Other Transistors | 3.15nF | 20 ns | 50ns | 60 ns | 110 ns | 5.6A | 8V | -8V | SILICON | -1V | 2W Ta | 20A | -8V | P-Channel | -1 V | 42m Ω @ 5.6A, 4.5V | 1V @ 250μA | 25nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR668ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir668adpt1re3-datasheets-0824.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 104W Tc | N-Channel | 3750pF @ 50V | 4.8mOhm @ 20A, 10V | 4V @ 250μA | 93.6A Tc | 81nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661 | Vishay Siliconix | $16.59 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | 3 | Lead, Tin | No | 1 | Single | 6.25W | 1 | TO-39 | 50pF | 860mA | 20V | 90V | 725mW Ta 6.25W Tc | 4Ohm | 90V | N-Channel | 50pF @ 25V | 4Ohm @ 1A, 10V | 2V @ 1mA | 860mA Tc | 4 Ω | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7469DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7469dpt1ge3-datasheets-1434.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 25MOhm | 8 | yes | EAR99 | 27A | unknown | e3 | Matte Tin (Sn) | 80V | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 83W | 1 | Other Transistors | Not Qualified | 150°C | R-PDSO-C5 | 45 ns | 220ns | 110 ns | 95 ns | -28A | 20V | SILICON | DRAIN | SWITCHING | -10V | 5.2W Ta 83.3W Tc | -80V | P-Channel | 4700pF @ 40V | 25m Ω @ 10.2A, 10V | 3V @ 250μA | 28A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP21N60L | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-irfp21n60l-datasheets-9473.pdf | TO-247-3 | TO-247-3 | 600V | 330W Tc | N-Channel | 4000pF @ 25V | 320mOhm @ 13A, 10V | 5V @ 250μA | 21A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM120P06-07L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sqm120p0607lge3-datasheets-3246.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.08mm | 12 Weeks | 1 | 375W | 175°C | TO-263 (D2Pak) | 15 ns | 97 ns | -120A | 20V | 60V | 375W Tc | 5.6mOhm | -60V | P-Channel | 14280pF @ 25V | 6.7mOhm @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 270nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP26N60L | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp26n60lpbf-datasheets-4818.pdf | TO-247-3 | TO-247-3 | 600V | 470W Tc | N-Channel | 5020pF @ 25V | 250mOhm @ 16A, 10V | 5V @ 250μA | 26A Tc | 180nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4434DY-T1-E3 | Vishay Siliconix | $1.27 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4434dyt1e3-datasheets-5004.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 155mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | 16 ns | 23ns | 19 ns | 47 ns | 3A | 20V | SILICON | SWITCHING | 1.56W Ta | 250V | N-Channel | 155m Ω @ 3A, 10V | 4V @ 250μA | 2.1A Ta | 50nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5415EDU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5415edut1ge3-datasheets-1196.pdf | PowerPAK® ChipFET™ Single | 15 Weeks | 8 | EAR99 | No | Single | 45ns | 25 ns | 75 ns | 25A | -1V | 20V | 3.1W Ta 31W Tc | -20V | P-Channel | 4300pF @ 10V | 9.8m Ω @ 10A, 4.5V | 1V @ 250μA | 25A Tc | 120nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4459ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4459adyt1ge3-datasheets-7767.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 5MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3.5W | 1 | 16 ns | 16ns | 20 ns | 80 ns | -29A | 20V | SILICON | SWITCHING | 30V | -2.5V | 3.5W Ta 7.8W Tc | -30V | P-Channel | 6000pF @ 15V | -2.5 V | 5m Ω @ 15A, 10V | 2.5V @ 250μA | 29A Tc | 195nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP90N06-5M0P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Strip | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup90n065m0pe3-datasheets-9886.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | 23 ns | 15ns | 8 ns | 36 ns | 90A | 20V | 60V | SILICON | DRAIN | SWITCHING | 3.75W Ta 300W Tc | TO-220AB | 240A | 0.005Ohm | 245 mJ | N-Channel | 6190pF @ 30V | 5m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7113DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7113dnt1ge3-datasheets-8522.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | 5 | 14 Weeks | Unknown | 134mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | 8 | 1 | Single | 3.7W | 1 | S-PDSO-F5 | 30 ns | 110ns | 40 ns | 51 ns | 3.5A | 20V | SILICON | DRAIN | SWITCHING | 100V | -1V | 3.7W Ta 52W Tc | 20A | -100V | P-Channel | 1480pF @ 50V | 134m Ω @ 4A, 10V | 3V @ 250μA | 13.2A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP25P10-138-GE3 | Vishay Siliconix | $2.06 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup25p10138ge3-datasheets-2164.pdf | TO-220-3 | 3 | 6.000006g | No SVHC | 3 | EAR99 | unknown | 1 | Single | 1 | 16.3A | 20V | SILICON | DRAIN | SWITCHING | P-CHANNEL | 100V | 3.1W Ta 73.5W Tc | TO-220AB | 40A | N-Channel | 2100pF @ 50V | 13.8m Ω @ 6A, 10V | 4V @ 250μA | 16.3A Tc | 60nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1411DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1411dht1ge3-datasheets-0719.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | 420mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 1W Ta | 0.42A | 2.7Ohm | P-Channel | 2.6 Ω @ 500mA, 10V | 4.5V @ 100μA | 420mA Ta | 6.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5446DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5442dut1ge3-datasheets-8289.pdf | PowerPAK® ChipFET™ Single | PowerPAK® ChipFet Single | 30V | 31W Tc | N-Channel | 1610pF @ 15V | 6.4mOhm @ 10A, 10V | 2.5V @ 250μA | 25A Tc | 30nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7117DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7117dnt1e3-datasheets-3206.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 1.2Ohm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | Other Transistors | S-XDSO-C5 | 7 ns | 11ns | 11 ns | 16 ns | 1.1A | 20V | SILICON | DRAIN | SWITCHING | 150V | 3.2W Ta 12.5W Tc | 2.2A | P-Channel | 510pF @ 25V | 1.2 Ω @ 500mA, 10V | 4.5V @ 250μA | 2.17A Tc | 12nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3865DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si3865ddvt1ge3-datasheets-2823.pdf | 2.8A | SOT-23-6 Thin, TSOT-23-6 | 3.1mm | 1mm | 1.7mm | Lead Free | 5 | 14 Weeks | 19.986414mg | No SVHC | 12V | 1.5V | 165mOhm | 6 | On/Off | No | 12V | 1 | Slew Rate Controlled | 830mW | DUAL | GULL WING | 1.8V | 0.95mm | SI3865D | 5 | ANALOG CIRCUIT | 830mW | R-PDSO-G5 | 2.8A | 1A | P-Channel | 1.5V~12V | 1 | General Purpose | High Side | 45m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1308EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1308edlt1ge3-datasheets-5716.pdf | SC-70, SOT-323 | 2.2mm | 1.1mm | 1.35mm | Lead Free | 3 | 14 Weeks | 124.596154mg | No SVHC | 132mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | Single | 400mW | 1 | FET General Purpose Power | 150°C | 2 ns | 9ns | 8 ns | 8 ns | 1.5A | 12V | SILICON | SWITCHING | 600mV | 400mW Ta 500mW Tc | 30V | N-Channel | 105pF @ 15V | 132m Ω @ 1.4A, 10V | 1.5V @ 250μA | 1.4A Tc | 4.1nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3865BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOS | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si3865bdvt1e3-datasheets-2147.pdf | 2.9A | SOT-23-6 Thin, TSOT-23-6 | 3.0988mm | 990.6μm | 1.7018mm | Lead Free | 6 | Unknown | 175mOhm | 6 | On/Off | yes | EAR99 | No | 1 | e3 | Slew Rate Controlled | Matte Tin (Sn) | 830mW | GULL WING | 260 | 2.5V | 0.95mm | SI3865 | 6 | 8V | Dual | 40 | 830mW | 2 | Peripheral Drivers | 2.9A | P-Channel | 1.8V~8V | 2.9A | 8V | 1 | General Purpose | High Side | 1A | TRANSIENT | 1 | 60mOhm | 8V | 45m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2318AES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2318aest1ge3-datasheets-6748.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 12 Weeks | No SVHC | 3 | EAR99 | Tin | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 7.5 ns | 8.4ns | 5.7 ns | 12 ns | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 2V | 3W Tc | 8A | 46 pF | N-Channel | 555pF @ 10V | 31m Ω @ 6A, 10V | 2.5V @ 250μA | 8A Tc | 13nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32432DR3-T1GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | /files/vishaysiliconix-sip32431dr3t1ge3-datasheets-2669.pdf | 6-TSSOP, SC-88, SOT-363 | 14 Weeks | On/Off | Slew Rate Controlled | SC-70-6 | P-Channel | 1.5V~5.5V | 1 | General Purpose | High Side | Reverse Current | 1.4A | Not Required | 147mOhm | 1:1 |
