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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI5947DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5947dut1e3-datasheets-4650.pdf | PowerPAK® ChipFET™ Dual | Lead Free | 6 | 58MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 10.4W | C BEND | 260 | SI5947 | 8 | Dual | 40 | 2.3W | 2 | Other Transistors | R-XDSO-C6 | 15ns | 10 ns | 25 ns | -6A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 5A | -20V | 2 P-Channel (Dual) | 480pF @ 10V | 58m Ω @ 3.6A, 4.5V | 1.5V @ 250μA | 6A | 17nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2536DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2536dqt1e3-datasheets-8379.pdf | 10-VFDFN Exposed Pad | 3mm | 880μm | 3mm | 3V | 1μA | 12 Weeks | 50.008559mg | 6V | 1.8V | 500mOhm | 10 | 1.191W | DG2536 | 2 | 1.191W | 2 | 10-DFN (3x3) | SPDT | 82 ns | 73 ns | Single | 4 | 2 | 500mOhm | 2:1 | 3V | SPDT | 1nA | 145pF | 82ns, 73ns | 21pC | 50mOhm (Max) | -69dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6967DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6967dqt1e3-datasheets-2348.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 30mOhm | 8 | 1.1W | 2 | Dual | 8-TSSOP | 20 ns | 30ns | 50 ns | 85 ns | 5A | 8V | 8V | 1.1W | 30mOhm | 2 P-Channel (Dual) | 30mOhm @ 5A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | Logic Level Gate | 30 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411LDQ-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | 1.2mm | ROHS3 Compliant | 2007 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 1μA | 16 | 21 Weeks | 12V | 2.7V | 50Ohm | 16 | no | No | 4 | e0 | TIN LEAD | 450mW | GULL WING | 240 | 5V | 0.65mm | DG411 | 16 | 1 | 30 | 450mW | Multiplexer or Switches | 3/12/+-5V | 280MHz | SPST | 50 ns | 35 ns | 6V | Dual, Single | 3V | -5V | 4 | SEPARATE OUTPUT | 17Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6983DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si6983dqt1e3-datasheets-4706.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 24mOhm | 8 | 830mW | SI6983 | 2 | Dual | 8-TSSOP | 40 ns | 55ns | 52 ns | 135 ns | -5.4A | 8V | 20V | 830mW | 24mOhm | 2 P-Channel (Dual) | 24mOhm @ 5.4A, 4.5V | 1V @ 400μA | 4.6A | 30nC @ 4.5V | Logic Level Gate | 24 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | 5.08mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg442bdyt1e3-datasheets-1247.pdf | 16-DIP (0.300, 7.62mm) | 20.13mm | 7.62mm | 1μA | 16 | 10 Weeks | 25V | 13V | 90Ohm | 16 | yes | unknown | 4 | e3 | Matte Tin (Sn) | 470mW | NOT SPECIFIED | 15V | DG441 | 16 | 1 | NOT SPECIFIED | 470mW | Multiplexer or Switches | Not Qualified | SPST | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | 120ns | 220ns | NO | 12V ±15V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5906DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5906dut1ge3-datasheets-2735.pdf | PowerPAK® ChipFET™ Dual | Lead Free | 6 | Unknown | 31MOhm | 8 | EAR99 | e3 | PURE MATTE TIN | 10.4W | NO LEAD | 260 | 8 | Dual | 30 | 10.4W | 2 | Not Qualified | R-XDSO-N6 | 10 ns | 90ns | 50 ns | 12 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2.2V | 6A | 30V | 2 N-Channel (Dual) | 300pF @ 15V | 31m Ω @ 4.8A, 10V | 2.2V @ 250μA | 8.6nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG506BEW-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100μA | ROHS3 Compliant | 2011 | /files/vishaysiliconix-dg507bewt1ge3-datasheets-3635.pdf | 28-SOIC (0.295, 7.50mm Width) | 17.91mm | 2.31mm | 7.49mm | 15V | 114MHz | 100μA | 28 | 12 Weeks | 2.214806g | Unknown | 44V | 12V | 450Ohm | 28 | yes | No | 1 | 5μA | 840mW | GULL WING | 260 | 15V | DG506 | 28 | 16 | Single | 40 | 840mW | 1 | 250 ns | 220 ns | 20V | Multiplexer | 300 ns | Dual, Single | 5V | -15V | 300Ohm | 85 dB | 10Ohm | BREAK-BEFORE-MAKE | 0.03A | 16:1 | ±5V~20V | 1nA | 3pF 13pF | 250ns, 200ns | 1pC | 10 Ω | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3419EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq3419evt1ge3-datasheets-3842.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 5W Tc | MO-193AA | 6.9A | 0.058Ohm | 100 pF | P-Channel | 990pF @ 20V | 58m Ω @ 2.5A, 10V | 2.5V @ 250μA | 6.9A Tc | 11.3nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1nA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 15V | Lead Free | 1μA | 8 | 14 Weeks | 540.001716mg | No SVHC | 36V | 13V | 35Ohm | 8 | yes | No | 1 | 1nA | e3 | Matte Tin (Sn) | 400mW | GULL WING | 265 | 15V | DG418 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 35Ohm | 20mOhm | BREAK-BEFORE-MAKE | 250ns | NO | 12V ±15V | 1:1 | SPST - NO | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3473CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3473cdvt1ge3-datasheets-5198.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 6 | 14 Weeks | 19.986414mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 10 ns | 15ns | 35 ns | 62 ns | 8A | 8V | SILICON | SWITCHING | 12V | 2W Ta 4.2W Tc | 8A | 0.022Ohm | -12V | P-Channel | 2010pF @ 6V | 22m Ω @ 8.1A, 4.5V | 1V @ 250μA | 8A Tc | 65nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413HSDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg411hsdnt1e4-datasheets-3972.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 16 | 10 Weeks | 1.627801g | 44V | 13V | 80Ohm | 16 | yes | No | 4 | e3 | MATTE TIN | 470mW | 15V | DG413 | 16 | 1 | Multiplexer or Switches | 4 | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | 12V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4942DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si4942dyt1ge3-datasheets-2263.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | No SVHC | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4942 | 8 | Dual | 40 | 1.1W | 2 | FET General Purpose Powers | 4nF | 13 ns | 10ns | 10 ns | 31 ns | 5.3A | 20V | 40V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 40V | 2 N-Channel (Dual) | 3 V | 21m Ω @ 7.4A, 10V | 3V @ 250μA | 32nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9454EN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg9454ent1e4-datasheets-6591.pdf | 16-WFQFN | 2.6mm | 800μm | 1.8mm | 540MHz | Lead Free | 10μA | 16 | 13.2V | 2.7V | 165Ohm | 16 | yes | unknown | 3 | e4 | NICKEL PALLADIUM GOLD | 525mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG9454 | 16 | 2 | 40 | 525mW | 3 | Not Qualified | 250 ns | 180 ns | Multiplexer | 170 ns | Single | 6 | 120Ohm | 90 dB | BREAK-BEFORE-MAKE | 2:1 | 2.7V~13.2V | SPDT | 1nA | 2pF 3pF | 180ns, 110ns | 0.86pC | 4 Ω | -81dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA915DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia915djt1ge3-datasheets-6219.pdf | PowerPAK® SC-70-6 Dual | 6 | 12 Weeks | 28.009329mg | Unknown | 6 | EAR99 | No | 6.5W | 6 | 2 | Dual | 1.9W | 2 | Other Transistors | 35 ns | 25ns | 10 ns | 15 ns | 3.7A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | 4.5A | 0.087Ohm | 2 P-Channel (Dual) | 275pF @ 15V | -1 V | 87m Ω @ 2.9A, 10V | 2.2V @ 250μA | 4.5A | 9nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1411EQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.2mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg1413ent1ge4-datasheets-3369.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | Lead Free | 1μA | 16 | 172.98879mg | Unknown | 24V | 4.5V | 1.8Ohm | 16 | No | 4 | YES | GULL WING | 5V | 0.65mm | DG1411 | 1 | 4 | 210MHz | 150 ns | 120 ns | 15V | Dual, Single | 4.5V | -5V | 1.8Ohm | 80 dB | 0.08Ohm | 380ns | 510ns | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NC | 550pA | 11pF 24pF | 150ns, 120ns | -20pC | 80m Ω | -100dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS110DN-T1-GE3 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis110dnt1ge3-datasheets-7363.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 100V | 3.2W Ta 24W Tc | N-Channel | 550pF @ 50V | 54mOhm @ 4A, 10V | 4V @ 250μA | 5.2A Ta 14.2A Tc | 13nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 30mA | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 8 Weeks | 1.627801g | 36V | 13V | 35Ohm | 16 | No | 470mW | 4 | 470mW | 4 | 16-PDIP | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 4 | 4 | 35Ohm | 5V~44V ±5V~20V | 1:1 | SPST - NO | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH407DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish407dnt1ge3-datasheets-8032.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 20V | 3.6W Ta 33W Tc | P-Channel | 2760pF @ 10V | 9.5mOhm @ 15.3A, 4.5V | 1V @ 250μA | 15.4A Ta 25A Tc | 93.8nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG445DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | 30mA | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg445dy-datasheets-7564.pdf | 16-SOIC (0.154, 3.90mm Width) | 6 Weeks | 4 | 640mW | 4 | 16-SOIC | 85Ohm | 85Ohm | 5V~36V ±5V~20V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS481ENW-T1_GE3 | Vishay Siliconix | $12.62 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs481enwt1ge3-datasheets-9138.pdf | PowerPAK® 1212-8 | 1.17mm | 12 Weeks | 1 | 62.5W | 175°C | PowerPAK® 1212-8 | 7.1 ns | 15.3 ns | -4.7A | 20V | 150V | 62.5W Tc | 910mOhm | -150V | P-Channel | 385pF @ 75V | 1.095Ohm @ 5A, 10V | 3.5V @ 250μA | 4.7A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG200AAA/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg200aaa883-datasheets-7600.pdf | TO-100-10 Metal Can | 36V | 13V | 70Ohm | 10 | 2 | 450mW | 2 | TO-100-10 | 22V | 7V | 2 | 2 | 70Ohm | 1:1 | SPST - NC | ±15V | 2nA | 9pF 9pF | 440ns, 340ns | -10pC | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS401EN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqs401ent1ge3-datasheets-0506.pdf | PowerPAK® 1212-8 | 12 Weeks | PowerPAK® 1212-8 | 40V | 62.5W Tc | 20mOhm | P-Channel | 1875pF @ 20V | 29mOhm @ 12A, 10V | 2.5V @ 250μA | 16A Tc | 21.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | 16-CDIP (0.300, 7.62mm) | 16 | 16 Weeks | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | DUAL | 16 | 900mW | Multiplexer or Switches | 12/+-15V | 22V | 4.5V | 4 | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | 300ns | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf830apbf-datasheets-1618.pdf | 500V | 5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | Unknown | 1.4Ohm | 3 | No | 5A | 500V | 1 | Single | 74W | 1 | TO-220AB | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 4.5V | 74W Tc | 650 ns | 1.4Ohm | 500V | N-Channel | 620pF @ 25V | 4.5 V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG221BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg221bdy-datasheets-7675.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 1.5mA | 16 | 547.485991mg | 18V | 13V | 90Ohm | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | YES | 600mW | GULL WING | 15V | 1.27mm | 16 | Multiplexer or Switches | 4 | Not Qualified | R-PDSO-G16 | 550 ns | 340 ns | 18V | 15V | Dual | 7V | -15V | SEPARATE OUTPUT | 90Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 5nA | 8pF 9pF | 550ns, 340ns | 20pC | -90dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7439DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7439dpt1ge3-datasheets-2761.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 90mOhm | 8 | yes | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 25 ns | 46ns | 46 ns | 115 ns | -5.2A | 20V | SILICON | DRAIN | SWITCHING | 150V | -4V | 1.9W Ta | 3A | 50A | -150V | P-Channel | -4 V | 90m Ω @ 5.2A, 10V | 4V @ 250μA | 3A Ta | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG221BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg221bdy-datasheets-7675.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 1.5mA | 16 | 547.485991mg | 18V | 13V | 90Ohm | no | No | 4 | e0 | TIN LEAD | YES | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | Multiplexer or Switches | 4 | R-PDSO-G16 | 550 ns | 340 ns | 18V | 15V | Dual | 7V | -15V | SEPARATE OUTPUT | 90Ohm | 70 dB | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 5nA | 8pF 9pF | 550ns, 340ns | 20pC | -90dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF740LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf740lcpbf-datasheets-3932.pdf | 400V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 550mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.1nF | 11 ns | 31ns | 20 ns | 25 ns | 10A | 30V | 400V | 4V | 125W Tc | 570 ns | 550mOhm | 400V | N-Channel | 1100pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 39nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg303bdye3-datasheets-5523.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | 1mA | 1.620005g | 36V | 13V | 50Ohm | 14 | no | unknown | 470mW | 14 | 1 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | 50Ohm | 2:1 | SPDT | ±15V | 5nA | 14pF 14pF | 150ns, 130ns (Typ) | 8pC | -74dB @ 500kHz |
