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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIS427EDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis427ednt1ge3-datasheets-6829.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | S-PDSO-C5 | 45 ns | 40ns | 12 ns | 28 ns | -50A | 25V | SILICON | DRAIN | SWITCHING | 30V | 3.7W Ta 52W Tc | -30V | P-Channel | 1930pF @ 15V | 10.6m Ω @ 11A, 10V | 2.5V @ 250μA | 50A Tc | 66nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| SISS10ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss10adnt1ge3-datasheets-7983.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 40V | 4.8W Ta 56.8W Tc | N-Channel | 3030pF @ 20V | 2.65mOhm @ 15A, 10V | 2.4V @ 250μA | 31.7A Ta 109A Tc | 61nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA42EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja42ept1ge3-datasheets-8583.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 27W Tc | N-Channel | 1700pF @ 25V | 9.4mOhm @ 6A, 10V | 2.3V @ 250μA | 20A Tc | 33nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA78EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja78ept1ge3-datasheets-8909.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 68W Tc | N-Channel | 5100pF @ 25V | 5.3mOhm @ 10A, 10V | 3.3V @ 250μA | 72A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA90DP-T1-GE3 | Vishay Siliconix | $0.56 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira90dpt1re3-datasheets-5783.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 104W Tc | N-Channel | 10180pF @ 15V | 0.8mOhm @ 20A, 10V | 2V @ 250μA | 100A Tc | 153nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5443DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5443dct1e3-datasheets-0192.pdf | 8-SMD, Flat Lead | 8 | 21 Weeks | 65mOhm | yes | EAR99 | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 30 | 1.3W | 1 | Other Transistors | Not Qualified | R-XDSO-C8 | 3.6A | 12V | SILICON | 1.3W Ta | 20V | P-Channel | 65m Ω @ 3.6A, 4.5V | 600mV @ 250μA (Min) | 3.6A Ta | 14nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7703EDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7703ednt1e3-datasheets-0864.pdf | PowerPAK® 1212-8 | 6 | 49 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 40 | 1.3W | 1 | Other Transistors | S-XDSO-C6 | 4 ns | 6ns | 6 ns | 23 ns | -6.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 1.3W Ta | 4.3A | 20A | 20V | P-Channel | 48m Ω @ 6.3A, 4.5V | 1V @ 800μA | 4.3A Ta | 18nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| IRF634PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf634pbf-datasheets-1281.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 450mOhm | 3 | No | 1 | Single | 74W | 1 | TO-220AB | 770pF | 9.6 ns | 21ns | 19 ns | 42 ns | 8.1A | 20V | 250V | 4V | 74W Tc | 450mOhm | N-Channel | 770pF @ 25V | 4 V | 450mOhm @ 5.1A, 10V | 4V @ 250μA | 8.1A Tc | 41nC @ 10V | 450 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF9Z20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9z20pbf-datasheets-2328.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | Unknown | 280mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220AB | 480pF | 8.2 ns | 57ns | 25 ns | 12 ns | 9.7A | 20V | 50V | -4V | 40W Tc | 280mOhm | P-Channel | 480pF @ 25V | -4 V | 280mOhm @ 5.6A, 10V | 4V @ 250μA | 9.7A Tc | 26nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIHB22N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n65ege3-datasheets-2757.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | Unknown | 3 | yes | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 227W | 1 | R-PSSO-G2 | 33ns | 38 ns | 73 ns | 22A | 4V | SILICON | SWITCHING | 227W Tc | 56A | 650V | N-Channel | 2415pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIS415DNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis415dntt1ge3-datasheets-3135.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | 8 | EAR99 | unknown | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 3.7W | 1 | S-PDSO-F5 | 38ns | 25 ns | 82 ns | 35A | -1.5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 3.7W Ta 52W Tc | 0.004Ohm | 20 mJ | -20V | P-Channel | 5460pF @ 10V | 4m Ω @ 20A, 10V | 1.5V @ 250μA | 35A Tc | 180nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| SIR474DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 29.8W Tc | N-Channel | 985pF @ 15V | 9.5mOhm @ 10A, 10V | 2.2V @ 250μA | 20A Tc | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU3N50DA-GE3 | Vishay Siliconix | $0.77 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu3n50dage3-datasheets-4476.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 8 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 500V | 69W Tc | N-Channel | 177pF @ 100V | 3.2 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4178DY-T1-E3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4178dyt1e3-datasheets-5445.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 405pF | 12A | 30V | 2.4W Ta 5W Tc | N-Channel | 405pF @ 15V | 21mOhm @ 8.4A, 10V | 2.8V @ 250μA | 12A Tc | 12nC @ 10V | 21 mΩ | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8481DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si8481dbt1e1-datasheets-6457.pdf | 4-UFBGA | 600μm | 4 | 21 Weeks | EAR99 | e3 | Tin (Sn) | YES | BOTTOM | BALL | 260 | 1 | 30 | 1.1W | 1 | 150°C | S-PBGA-B4 | 16 ns | 300 ns | -6.2A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.8W Tc | 0.025Ohm | -20V | P-Channel | 2500pF @ 10V | 21m Ω @ 3A, 4.5V | 900mV @ 250μA | 9.7A Tc | 47nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SISA16DN-T1-GE3 | Vishay Siliconix | $1.26 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | PowerPAK® 1212-8 | 14 Weeks | Unknown | 8 | EAR99 | 3.5W | NOT SPECIFIED | SISA16 | NOT SPECIFIED | 16A | 30V | N-Channel | 2060pF @ 15V | 6.8m Ω @ 15A, 10V | 2.3V @ 250μA | 16A Ta | 47nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z24STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irf9z24spbf-datasheets-1340.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 12 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 570pF | 13 ns | 68ns | 29 ns | 15 ns | -11A | 20V | 60V | 3.7W Ta 60W Tc | 280mOhm | -60V | P-Channel | 570pF @ 25V | 280mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQM100N04-2M7_GE3 | Vishay Siliconix | $9.91 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm100n042m7ge3-datasheets-9286.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 1.946308g | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 14 ns | 11ns | 9 ns | 48 ns | 100A | 20V | SILICON | 40V | 40V | 157W Tc | 400A | 0.0027Ohm | 245 mJ | N-Channel | 7910pF @ 25V | 2.7m Ω @ 30A, 10V | 3.5V @ 250μA | 100A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFZ24STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfz24pbf-datasheets-1307.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | yes | EAR99 | No | 8541.29.00.95 | SINGLE | GULL WING | 260 | 4 | 30 | 1 | R-PSSO-G2 | 13 ns | 58ns | 42 ns | 25 ns | 17A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 60V | 60V | 3.7W Ta 60W Tc | 68A | 0.1Ohm | 100 mJ | N-Channel | 640pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SQD40030E_GE3 | Vishay Siliconix | $4.87 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40030ege3-datasheets-0333.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 40V | N-Channel | 65nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF9630S-GE3 | Vishay Siliconix | $1.47 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihfr9014ge3-datasheets-5746.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 200V | 3W Ta 74W Tc | P-Channel | 700pF @ 25V | 800mOhm @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL630STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irl630spbf-datasheets-4254.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | No SVHC | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 9A | 10V | 200V | 3.1W Ta 74W Tc | 400mOhm | N-Channel | 1100pF @ 25V | 400mOhm @ 5.4A, 5V | 2V @ 250μA | 9A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHF18N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihf18n50de3-datasheets-2494.pdf | TO-220-3 Full Pack | 10.63mm | 9.8mm | 4.83mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 1 | FET General Purpose Powers | 19 ns | 36ns | 30 ns | 36 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 39W Tc | TO-220AB | 0.28Ohm | 500V | N-Channel | 1500pF @ 100V | 280m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 76nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIHH11N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh11n65et1ge3-datasheets-3399.pdf | 8-PowerTDFN | 18 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 12A | 650V | 130W Tc | N-Channel | 1257pF @ 100V | 363m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 68nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF510 | Vishay Siliconix | $0.36 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf510pbf-datasheets-0849.pdf | 100V | 5.6A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | Unknown | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 43W Tc | 540mOhm | 100V | N-Channel | 180pF @ 25V | 4 V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRLD024 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-irld024pbf-datasheets-1254.pdf | 60V | 2.5A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 4 | 1 | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 870pF | 11 ns | 110ns | 110 ns | 23 ns | 2.5A | 10V | 60V | 1.3W Ta | 100mOhm | 60V | N-Channel | 870pF @ 25V | 100mOhm @ 1.5A, 5V | 2V @ 250μA | 2.5A Ta | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF634 | Vishay Siliconix | $0.47 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf634pbf-datasheets-1281.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | Unknown | 3 | No | 1 | Single | TO-220AB | 770pF | 9.6 ns | 21ns | 19 ns | 42 ns | 8.1A | 20V | 250V | 4V | 74W Tc | 450mOhm | 250V | N-Channel | 770pF @ 25V | 4 V | 450mOhm @ 5.1A, 10V | 4V @ 250μA | 8.1A Tc | 41nC @ 10V | 450 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFP340 | Vishay Siliconix | $2.53 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp340pbf-datasheets-1883.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 38.000013g | 3 | No | 1 | Single | TO-247-3 | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 11A | 20V | 400V | 150W Tc | 550mOhm | N-Channel | 1400pF @ 25V | 550mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 62nC @ 10V | 550 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP450 | Vishay Siliconix | $1.05 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp450pbf-datasheets-1281.pdf | 500V | 14A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 38.000013g | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.6nF | 17 ns | 47ns | 44 ns | 92 ns | 14A | 20V | 500V | 190W Tc | 400mOhm | 500V | N-Channel | 2600pF @ 25V | 400mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 150nC @ 10V | 400 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF820S | Vishay Siliconix | $5.09 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf820spbf-datasheets-4619.pdf | 500V | 2.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.5A | 20V | 500V | 3.1W Ta 50W Tc | 3Ohm | N-Channel | 360pF @ 25V | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 3 Ω | 10V | ±20V |
