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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Package / Case | Length | Height | Width | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Applications | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DG542DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 3.5mA | ROHS3 Compliant | 2000 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 500MHz | 6mA | 16 | 1.627801g | Unknown | 15V | -3V | 60Ohm | 16 | yes | 4 | e3 | RGB, T-Switch Configuration | Matte Tin (Sn) | Video | 470mW | NOT SPECIFIED | 15V | DG542 | 16 | 4 | NOT SPECIFIED | Multiplexer or Switches | Not Qualified | 100 ns | 60 ns | 15V | Dual, Single | 10V | -3V | SEPARATE OUTPUT | 60Ohm | 60Ohm | 75 dB | 2Ohm | BREAK-BEFORE-MAKE | 85ns | NO/NC | 3V~15V ±3V~15V | 1:1 | SPST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5441DC-T1-E3 | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5441dct1e3-datasheets-6398.pdf | 8-SMD, Flat Lead | 8 | 8 | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Not Qualified | 35ns | 35 ns | 65 ns | 3.9A | 12V | SILICON | 20V | 1.3W Ta | 0.055Ohm | -20V | P-Channel | 55m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 3.9A Ta | 22nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG542DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | NMOS | 3.5mA | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500MHz | 6mA | 16 | 547.485991mg | 15V | -3V | 60Ohm | no | unknown | 2 | e0 | RGB, T-Switch Configuration | TIN LEAD | Video | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 4 | 30 | Multiplexer or Switches | Not Qualified | R-PDSO-G16 | 100 ns | 60 ns | 15V | Dual, Single | 10V | -3V | SEPARATE OUTPUT | 60Ohm | 75 dB | 2Ohm | BREAK-BEFORE-MAKE | NO/NC | 3V~15V ±3V~15V | 1:1 | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4850EY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4850eyt1e3-datasheets-8689.pdf | 60V | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 506.605978mg | 8 | 1 | Single | 1.7W | 1 | 8-SO | 800mV | 10 ns | 10ns | 10 ns | 25 ns | 6A | 20V | 60V | 1.7W Ta | 22mOhm | 60V | N-Channel | 22mOhm @ 6A, 10V | 3V @ 250μA | 6A Ta | 27nC @ 10V | 22 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ262EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj262ept1ge3-datasheets-0774.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual Asymmetric | 60V | 27W Tc 48W Tc | 12.6mOhm | 2 N-Channel (Dual) | 550pF @ 25V 1260pF @ 25V | 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V | 2.5V @ 250μA | 15A Tc 40A Tc | 10nC @ 10V, 23nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5475DC-T1-E3 | Vishay Siliconix | $0.18 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5475dct1e3-datasheets-6481.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 8 | 1 | Single | 2.5W | 1206-8 ChipFET™ | 15 ns | 20ns | 80 ns | 122 ns | 5.5A | 8V | 12V | 1.3W Ta | 31mOhm | -12V | P-Channel | 31mOhm @ 5.5A, 4.5V | 450mV @ 1mA (Min) | 5.5A Ta | 29nC @ 4.5V | 31 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7272DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7272dpt1ge3-datasheets-1489.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | Tin | unknown | e3 | 22W | C BEND | 260 | SI7272 | 8 | 30 | 3.6W | 2 | FET General Purpose Powers | Not Qualified | R-XDSO-C6 | 20 ns | 15ns | 10 ns | 22 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 60A | 0.0093Ohm | 2 N-Channel (Dual) | 1100pF @ 15V | 9.3m Ω @ 15A, 10V | 2.5V @ 250μA | 25A | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5473DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5473dct1e3-datasheets-8484.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 27mOhm | 8 | 1 | Single | 1206-8 ChipFET™ | 25 ns | 50ns | 90 ns | 145 ns | 5.9A | 8V | 12V | 1.3W Ta | 27mOhm | -12V | P-Channel | 27mOhm @ 5.9A, 4.5V | 1V @ 250μA | 5.9A Ta | 32nC @ 4.5V | 27 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4904DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4904dyt1e3-datasheets-2203.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 16mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 2W | GULL WING | 260 | SI4904 | 8 | 2 | Dual | 40 | 2W | 2 | 88 ns | 117ns | 19 ns | 62 ns | 8A | 16V | SILICON | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 3.25W | 8A | 2 N-Channel (Dual) | 2390pF @ 20V | 16m Ω @ 5A, 10V | 2V @ 250μA | 85nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6466ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6466adqt1ge3-datasheets-6466.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | 14mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.05W | 1 | 27 ns | 34ns | 34 ns | 76 ns | 6.8A | 8V | SILICON | 1.05W Ta | 20V | N-Channel | 14m Ω @ 8.1A, 4.5V | 450mV @ 250μA (Min) | 6.8A Ta | 27nC @ 5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1902DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1902dlt1e3-datasheets-4051.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1.1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 7.512624mg | No SVHC | 385MOhm | 6 | yes | EAR99 | Tin | No | e3 | 270mW | GULL WING | SI1902 | 6 | 2 | Dual | 270mW | 2 | 150°C | 10 ns | 16ns | 16 ns | 10 ns | 660mA | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 20V | 2 N-Channel (Dual) | 600 mV | 385m Ω @ 660mA, 4.5V | 1.5V @ 250μA | 1.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7384DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7384dpt1e3-datasheets-6127.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 8 | 18 Weeks | 506.605978mg | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C8 | 10 ns | 13ns | 13 ns | 45 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 50A | 0.0085Ohm | 32 mJ | 30V | N-Channel | 8.5m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4925BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si4925bdyt1e3-datasheets-5285.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | SI4925 | 8 | 30 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.1W | 5.3A | 0.025Ohm | 2 P-Channel (Dual) | 25m Ω @ 7.1A, 10V | 3V @ 250μA | 5.3A | 50nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7682DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7682dpt1e3-datasheets-6650.pdf | PowerPAK® SO-8 | Lead Free | 5 | 9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 82ns | 10 ns | 18 ns | 17.5A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 27.5W Tc | 50A | 30V | N-Channel | 1595pF @ 15V | 9m Ω @ 20A, 10V | 2.5V @ 250μA | 20A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4286DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4286dyt1ge3-datasheets-5839.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 15 Weeks | 540.001716mg | No SVHC | 8 | EAR99 | No | 2.9W | GULL WING | SI4286 | 8 | Dual | 1.9W | 2 | FET General Purpose Power | 9 ns | 11ns | 7 ns | 10 ns | 7A | 20V | SILICON | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 7A | 40V | 2 N-Channel (Dual) | 375pF @ 20V | 32.5m Ω @ 8A, 10V | 2.5V @ 250μA | 10.5nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7445DP-T1-E3 | Vishay Siliconix | $2.23 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7445dpt1ge3-datasheets-6617.pdf | PowerPAK® 1212-8 | 4.9mm | 1.04mm | 5.0038mm | Lead Free | 506.605978mg | No SVHC | 8 | 1 | Single | 1.9W | 1 | PowerPAK® 1212-8 | 40 ns | 45ns | 45 ns | 400 ns | -19A | 8V | -20V | 20V | -1V | 1.9W Ta | 7.7mOhm | P-Channel | 7.7mOhm @ 19A, 4.5V | 1V @ 250μA | 12A Ta | 140nC @ 5V | 7.7 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS990DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis990dnt1ge3-datasheets-7450.pdf | PowerPAK® 1212-8 Dual | 6 | 14 Weeks | EAR99 | No | 25W | C BEND | 2 | Dual | 2 | FET General Purpose Powers | S-PDSO-C6 | 8 ns | 8ns | 6 ns | 8 ns | 12.1A | 20V | SILICON | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 0.085Ohm | 100V | 2 N-Channel (Dual) | 250pF @ 50V | 85m Ω @ 8A, 10V | 4V @ 250μA | 8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1307EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1307edlt1e3-datasheets-7903.pdf | SC-70, SOT-323 | 3 | yes | EAR99 | ESD PROTECTION | unknown | e3 | PURE MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 12V | 12V | 290mW Ta | 0.85A | 0.29Ohm | P-Channel | 290m Ω @ 1A, 4.5V | 450mV @ 250μA (Min) | 850mA Ta | 5nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4943BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4943bdyt1e3-datasheets-9089.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 19mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4943 | 8 | 2 | Dual | 40 | 1.1W | 2 | Other Transistors | 11 ns | 10ns | 10 ns | 94 ns | -8.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6.3A | -20V | 2 P-Channel (Dual) | -1 V | 19m Ω @ 8.4A, 10V | 3V @ 250μA | 6.3A | 25nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1400DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1400dlt1e3-datasheets-7906.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 13 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 568mW | 1 | FET General Purpose Powers | 10 ns | 30ns | 8 ns | 14 ns | 1.6A | 12V | SILICON | 20V | 20V | 568mW Ta | N-Channel | 150m Ω @ 1.7A, 4.5V | 600mV @ 250μA (Min) | 1.6A Ta | 4nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS966ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqs966enwt1ge3-datasheets-0180.pdf | PowerPAK® 1212-8W Dual | PowerPAK® 1212-8W Dual | 60V | 27.8W Tc | 2 N-Channel (Dual) | 572pF @ 25V | 36mOhm @ 1.25A, 10V | 2.5V @ 250μA | 6A Tc | 8.8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5456DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5456dut1ge3-datasheets-2334.pdf | 8-PowerVDFN | 3 | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 8 | 30 | 3.1W | 1 | R-XDSO-N3 | 20 ns | 15ns | 10 ns | 20 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.1W Ta 31W Tc | 50A | 0.01Ohm | 20V | N-Channel | 1200pF @ 10V | 10m Ω @ 9.3A, 10V | 2.5V @ 250μA | 12A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1034CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1034cxt1ge3-datasheets-0871.pdf | SOT-563, SOT-666 | 6 | 14 Weeks | 6 | EAR99 | No | e3 | MATTE TIN | 220mW | FLAT | 260 | 6 | 30 | 220mW | 2 | FET General Purpose Power | 11 ns | 16ns | 11 ns | 26 ns | 610mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 43pF @ 10V | 396m Ω @ 500mA, 4.5V | 1V @ 250μA | 610mA Ta | 2nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7621DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7621dnt1ge3-datasheets-2383.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 30 | 3.1W | 1 | Other Transistors | S-XDSO-C5 | 8 ns | 75ns | 60 ns | 25 ns | 4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 3.1W Ta 12.5W Tc | 4A | 0.09Ohm | P-Channel | 300pF @ 10V | 90m Ω @ 3.9A, 4.5V | 2V @ 250μA | 4A Tc | 6.2nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB912DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib912dkt1ge3-datasheets-3512.pdf | PowerPAK® SC-75-6L Dual | 1.6mm | 750μm | 1.6mm | 6 | 14 Weeks | 95.991485mg | Unknown | 6 | yes | EAR99 | No | 3.1W | 260 | SIB912 | 6 | 2 | Dual | 40 | 1.1W | 1 | FET General Purpose Power | 5 ns | 10ns | 10 ns | 24 ns | 1.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 400mV | 20V | 2 N-Channel (Dual) | 95pF @ 10V | 216m Ω @ 1.8A, 4.5V | 1V @ 250μA | 3nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ458DP-T1-GE3 | Vishay Siliconix | $4.53 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij458dpt1ge3-datasheets-2581.pdf | PowerPAK® SO-8 | 4 | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 8 | 1 | 40 | 5W | 1 | R-PSSO-G4 | 38 ns | 44ns | 24 ns | 49 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 1V | 5W Ta 69.4W Tc | 35.5A | 0.0022Ohm | N-Channel | 4810pF @ 15V | 1 V | 2.2m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 122nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ968EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj968ept1ge3-datasheets-4319.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | Unknown | 8 | EAR99 | 25W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 25W | 2 | R-PSSO-G4 | 18A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 42W Tc | 0.0336Ohm | 4 mJ | 2 N-Channel (Dual) | 714pF @ 30V | 33.6m Ω @ 4.8A, 10V | 2.5V @ 250μA | 23.5A Tc | 18.5nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7882DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7882dpt1ge3-datasheets-0309.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | No SVHC | 5.5mOhm | 8 | yes | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 28 ns | 32ns | 32 ns | 82 ns | 13A | 8V | 12V | SILICON | DRAIN | SWITCHING | 1.4V | 1.9W Ta | 50A | 7.2 mJ | N-Channel | 1.4 V | 5.5m Ω @ 17A, 4.5V | 1.4V @ 250μA | 13A Ta | 30nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB00EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjb00ept1ge3-datasheets-5369.pdf | PowerPAK® SO-8 Dual | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 48W | 25A | 84A | 0.013Ohm | 26.5 mJ | 2 N-Channel (Dual) | 1700pF @ 25V | 13m Ω @ 10A, 10V | 3.5V @ 250μA | 30A Tc | 35nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE854DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -50°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie854dft1ge3-datasheets-2529.pdf | 10-PolarPAK® (L) | Lead Free | No SVHC | 14.2mOhm | 10 | No | Single | 5.2W | 1 | 10-PolarPAK® (L) | 3.1nF | 15 ns | 10ns | 10 ns | 30 ns | 13.2A | 20V | 100V | 100V | 2.5V | 5.2W Ta 125W Tc | 14.2mOhm | 100V | N-Channel | 3100pF @ 50V | 14.2mOhm @ 13.2A, 10V | 4.4V @ 250μA | 60A Tc | 75nC @ 10V | 14.2 mΩ | 10V | ±20V |
