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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG9431DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | /files/vishaysiliconix-dg9431edyge3-datasheets-8821.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 30Ohm | 8 | no | unknown | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | DUAL | GULL WING | 240 | 3V | 8 | 1 | 30 | 400mW | Multiplexer or Switches | 3/5V | Not Qualified | 75 ns | 50 ns | Single | 2 | 1 | 30Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | 2.7V~5V | SPDT | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG065N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg065n60ege3-datasheets-0023.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 250W Tc | N-Channel | 2700pF @ 100V | 65mOhm @ 16A, 10V | 5V @ 250μA | 40A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2037DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 20nA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2037dst1-datasheets-7724.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 3mm | Lead Free | 1μA | 8 | 5.5V | 1.8V | 5Ohm | 8 | No | 2 | 20nA | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.65mm | DG2037 | 8 | 1 | 30 | 320mW | Multiplexer or Switches | 3/5V | SPST | 35 ns | 31 ns | Single | 2 | SEPARATE OUTPUT | 5Ohm | 2.5Ohm | 61 dB | 0.3Ohm | BREAK-BEFORE-MAKE | 40ns | NO | 1:1 | 1.8V~5.5V | SPST - NO | 1nA | 15pF 17pF | 30ns, 22ns | 1pC | 200m Ω (Max) | -67dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg22n60ege3-datasheets-1867.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | Lead Free | 14 Weeks | 38.000013g | Unknown | 180mOhm | 3 | No | 1 | Single | 227W | 1 | TO-247AC | 1.92nF | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | 600V | 2V | 227W Tc | 180mOhm | 600V | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 180 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9204202XC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | FlatPack | 16 | 44V | 13V | 2 | DUAL | NOT SPECIFIED | 15V | 16 | 4 | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | 2 | R-XDFP-F16 | 20V | 5V | -15V | 30mA | 100Ohm | 75 dB | 15Ohm | 150ns | 4:1 | SP4T | ±15V | 500pA | 3pF 14pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TA | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg23n60ege3-datasheets-2090.pdf | TO-247-3 | 3 | 14 Weeks | 38.000013g | 158mOhm | NO | 1 | 1 | R-PSFM-T3 | 23A | SILICON | DRAIN | SWITCHING | 600V | 600V | 227W Tc | TO-247AC | 63A | 353 mJ | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9204101EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | CDIP | 36V | 13V | 16 | No | 4 | 900mW | 22V | 7V | 4 | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG70N60AEF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg70n60aefge3-datasheets-2450.pdf | TO-247-3 | 24.99mm | 21 Weeks | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 417W | 150°C | 45 ns | 219 ns | 60A | 20V | 417W Tc | 600V | N-Channel | 5348pF @ 100V | 41m Ω @ 35A, 10V | 4V @ 250μA | 60A Tc | 410nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9073101EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | CDIP | 36V | 13V | 16 | 4 | 900mW | 22V | 7V | 4 | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfz44spbf-datasheets-3540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | Tin | No | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | R-PSSO-G2 | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7W Ta 150W Tc | 200A | 0.028Ohm | N-Channel | 1900pF @ 25V | 28m Ω @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG612DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500MHz | Lead Free | 1μA | 16 | 665.986997mg | No SVHC | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | No | 4 | 5nA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG612 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 515-3V | SPST | 50 ns | 35 ns | 15V | Dual, Single | 10V | -3V | 4 | SEPARATE OUTPUT | 45Ohm | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 10V~18V ±10V~15V | 1:1 | SPST - NO | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP254PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp254pbf-datasheets-4012.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 140mOhm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.7nF | 15 ns | 63ns | 50 ns | 74 ns | 23A | 20V | 250V | 4V | 190W Tc | 560 ns | 140mOhm | 250V | N-Channel | 2700pF @ 25V | 4 V | 140mOhm @ 14A, 10V | 4V @ 250μA | 23A Tc | 140nC @ 10V | 140 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4053AEN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | -1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg4051aent1e4-datasheets-4533.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | 730MHz | 1μA | 16 | Unknown | 12V | 2.7V | 100Ohm | 16 | yes | 3 | 525mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG4053 | 16 | 2 | 40 | 525mW | 3 | Not Qualified | 151 ns | 138 ns | 5V | 3V | Multiplexer | 172 ns | Dual, Single | 2.5V | -3V | 6 | 100Ohm | 67 dB | 3Ohm | BREAK-BEFORE-MAKE | 119ns | 2.7V~12V ±2.5V~5V | 2:1 | SPDT | 1nA | 3pF 4pF | 108ns, 92ns | 0.25pC | 3 Ω | -67dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP450LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp450lcpbf-datasheets-4692.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 400mOhm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.2nF | 14 ns | 49ns | 30 ns | 30 ns | 14A | 30V | 500V | 4V | 190W Tc | 400mOhm | N-Channel | 2200pF @ 25V | 400mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 74nC @ 10V | 400 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411LDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 1μA | 16 | 547.485991mg | No SVHC | 12V | 2.7V | 33Ohm | 16 | yes | No | 4 | 20nA | e3 | MATTE TIN | 650mW | GULL WING | 260 | 5V | 1.27mm | DG411 | 16 | 1 | 40 | 650mW | Multiplexer or Switches | 280MHz | SPST | 50 ns | 35 ns | 6V | 5V | Dual, Single | 3V | -5V | 4 | SEPARATE OUTPUT | 17Ohm | 30Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ14SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfz14spbf-datasheets-7501.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 10A | 20V | 60V | 3.7W Ta 43W Tc | 200mOhm | 60V | N-Channel | 300pF @ 25V | 200mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2020DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | CMOS | 200nA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg2020dvt1e3-datasheets-5306.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 1μA | 6 | 19.986414mg | 5.5V | 2.7V | 1.6Ohm | 6 | No | 1 | 200nA | e3 | Matte Tin (Sn) | 570mW | DUAL | GULL WING | 0.95mm | DG2020 | 570mW | Multiplexer or Switches | 3/5V | 6 μs | 4 μs | Single | 2 | 1 | 1.6Ohm | BREAK-BEFORE-MAKE | 2:1 | 2.7V~5.5V | SPDT | 5.3nA | 65pF | 6μs, 4μs | 5pC | -54dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF15N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf15n60ee3-datasheets-7977.pdf | TO-220-3 Full Pack | Lead Free | 3 | 19 Weeks | Unknown | 280mOhm | 3 | No | 3 | Single | 34W | 1 | 17 ns | 51ns | 33 ns | 35 ns | 15A | 20V | SILICON | SWITCHING | 2V | 34W Tc | TO-220AB | 600V | N-Channel | 1350pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2511DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2511dnt1e4-datasheets-5355.pdf | 6-UFDFN | 1.2mm | 550μm | 1mm | 1μA | 6 | 57.09594mg | 5.5V | 1.8V | 1.3Ohm | 6 | yes | unknown | 1 | e4 | NICKEL PALLADIUM GOLD | 160mW | DUAL | NO LEAD | 260 | 3V | 0.4mm | DG251* | 6 | 1 | 40 | 160mW | Multiplexer or Switches | 3/5V | Not Qualified | 35 ns | 31 ns | Single | 2 | 1 | 1.3Ohm | 58 dB | 0.15Ohm | BREAK-BEFORE-MAKE | 34ns | 49ns | 2:1 | 1.8V~5.5V | SPDT | 2nA | 19pF | 35ns, 31ns | 14pC | 150m Ω (Max) | -64dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3457CDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3457cdvt1e3-datasheets-8953.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | Other Transistors | 40 ns | 80ns | 12 ns | 20 ns | 5.1A | 20V | SILICON | SWITCHING | 30V | 30V | 3W Tc | 0.074Ohm | P-Channel | 450pF @ 15V | 74m Ω @ 4.1A, 10V | 3V @ 250μA | 5.1A Tc | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2613DX-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg2613dxt1e3-datasheets-5384.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 1μA | 6 | 32.006612mg | 5.5V | 1.8V | 1.4Ohm | 6 | yes | No | 1 | e3 | MATTE TIN | 172mW | DUAL | FLAT | 260 | 3V | 0.5mm | DG2613 | 6 | 1 | 40 | 172mW | Multiplexer or Switches | 3V | 60 ns | 35 ns | Single | 2 | 1 | 1.4Ohm | 67 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 37ns | NC | 2:1 | 1.8V~5.5V | SPDT | 2nA | 36pF | 60ns, 35ns | 2.4pC | 100m Ω (Max) | -73dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n7002t1e3-datasheets-0519.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 1.437803g | 3 | No | DUAL | GULL WING | 2N7002 | 1 | Single | 1 | FET General Purpose Powers | 115mA | 40V | SILICON | SWITCHING | 200mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2732DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2731dqt1e3-datasheets-4047.pdf | 10-VFDFN Exposed Pad | 3mm | 880μm | 3mm | 1μA | 10 | 50.008559mg | 4.3V | 1.65V | 400mOhm | 10 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.191W | DUAL | NO LEAD | 260 | 3V | 0.5mm | DG2732 | 10 | 1 | 40 | Multiplexer or Switches | 2 | Not Qualified | 110 ns | 30 ns | Single | SEPARATE OUTPUT | 450mOhm | 75 dB | 0.03Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.65V~4.3V | SPDT | 1nA | 104pF | 110ns, 30ns | 9pC | 30m Ω | -75dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4403DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si4403ddyt1ge3-datasheets-2587.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | EAR99 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 5W Tc | 15.4A | 0.014Ohm | P-Channel | 3250pF @ 10V | 14m Ω @ 9A, 4.5V | 1V @ 250μA | 15.4A Tc | 99nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2532DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2532dqt1e3-datasheets-5438.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 3mm | 1μA | 10 | 5.5V | 1.8V | 600mOhm | 10 | yes | 2 | e3 | MATTE TIN | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2532 | 10 | 1 | 40 | 320mW | Multiplexer or Switches | 3V | Not Qualified | 70 ns | 65 ns | Single | 4 | 2 | 600mOhm | 69 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 77ns | 2:1 | 1.8V~5.5V | SPDT | 1nA | 143pF | 70ns, 65ns | 54pC | 50m Ω (Max) | -69dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2309CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2309cdst1ge3-datasheets-7356.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | 345mOhm | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | SI2309 | 3 | 1 | Single | 30 | 1W | 1 | Other Transistors | 150°C | 5 ns | 35ns | 35 ns | 15 ns | -1.2A | 20V | SILICON | SWITCHING | 60V | -1V | 1W Ta 1.7W Tc | -60V | P-Channel | 210pF @ 30V | 345m Ω @ 1.25A, 10V | 3V @ 250μA | 1.6A Tc | 4.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417LDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 12 Weeks | 540.001716mg | No SVHC | 12V | 2.7V | 18.5Ohm | 8 | yes | No | 400mW | DG417 | 8 | 400mW | SPST | 41 ns | 32 ns | 6V | 5V | Dual, Single | 3V | 1 | 20Ohm | 20Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA68EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqja68ept1ge3-datasheets-5578.pdf | PowerPAK® SO-8L | 1.267mm | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 45W | 1 | 175°C | R-PSSO-G4 | 9 ns | 15 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 45W Tc | 0.092Ohm | 20 pF | 4 mJ | 100V | N-Channel | 280pF @ 25V | 40ns | 25ns | 92m Ω @ 4A, 10V | 2.5V @ 250μA | 14A Tc | 8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 700μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg409ldqt1e3-datasheets-6643.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.07mm | 920μm | 4.4mm | Lead Free | 500μA | 16 | 172.98879mg | 12V | 2.7V | 17Ohm | 16 | yes | VIDEO APPLICATION | No | 1 | e3 | Matte Tin (Sn) | 650mW | GULL WING | 260 | 5V | 0.65mm | DG408 | 16 | 8 | 40 | 650mW | 1 | 150 ns | 150 ns | 6V | Multiplexer | Dual, Single | 3V | -5V | 29Ohm | 70 dB | BREAK-BEFORE-MAKE | 45ns | 60ns | 2.7V~12V ±3V~6V | 0.03A | 8:1 | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA60EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja60ept1ge3-datasheets-6810.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 45W | 1 | 175°C | R-PSSO-G4 | 9 ns | 21 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 45W Tc | 24.6A | 84A | 26 mJ | 60V | N-Channel | 1600pF @ 25V | 12.5m Ω @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V | 4.5V 10V | ±20V |
