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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIA911DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia911djt1e3-datasheets-4827.pdf | PowerPAK® SC-70-6 Dual | 6 | No | 6.5W | SIA911 | Dual | 1.9W | 2 | PowerPAK® SC-70-6 Dual | 355pF | 10ns | 10 ns | 20 ns | -4.5A | 8V | 20V | 6.5W | 94mOhm | 20V | 2 P-Channel (Dual) | 355pF @ 10V | 94mOhm @ 2.8A, 4.5V | 1V @ 250μA | 4.5A | 12.8nC @ 8V | Standard | 94 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 20V | 1μA | 8 | 10 Weeks | 930.006106mg | 36V | 13V | 35Ohm | 8 | yes | No | 4 | e3 | Matte Tin (Sn) | 400mW | 15V | 2.54mm | DG419 | 8 | 1 | Multiplexer or Switches | 1 | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 12V ±15V | 2:1 | SPDT | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7940DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7940dpt1ge3-datasheets-5439.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 17mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7940 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 30 ns | 50ns | 50 ns | 60 ns | 7.6A | 8V | SILICON | DRAIN | 12V | METAL-OXIDE SEMICONDUCTOR | 12V | 2 N-Channel (Dual) | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | 17nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG452EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg452eqt1e3-datasheets-7713.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 500nA | 16 | 13 Weeks | 665.986997mg | No SVHC | 36V | 12V | 7.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | No | 4 | 1nA | e3 | MATTE TIN | 600mW | GULL WING | 260 | 5V | 1.27mm | DG452 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 4 | SEPARATE OUTPUT | 5.3Ohm | 4Ohm | 0.13Ohm | BREAK-BEFORE-MAKE | 113ns | 256ns | NO | 1:1 | SPST - NO | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3443BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3443bdvt1e3-datasheets-3274.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 990.6μm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 60mOhm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.1W | 1 | Other Transistors | 22 ns | 35ns | 25 ns | 45 ns | 3.6A | 12V | SILICON | 20V | -1.4V | 1.1W Ta | -20V | P-Channel | -1.4 V | 60m Ω @ 4.7A, 4.5V | 1.4V @ 250μA | 3.6A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LEDJ-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-PowerDIP (0.300, 7.62mm) | 16 Weeks | 26Ohm | 16 | 4 | 16-PDIP | 26Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NO/NC | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ728DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-siz728dtt1ge3-datasheets-5670.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | Lead Free | 6 | 15 Weeks | Unknown | 6 | EAR99 | No | 48W | C BEND | SIZ728 | 6 | 2 | Dual | 2 | FET General Purpose Power | 18ns | 10 ns | 35A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 27W 48W | 70A | 0.0077Ohm | 25V | 2 N-Channel (Half Bridge) | 890pF @ 12.5V | 7.7m Ω @ 18A, 10V | 2.2V @ 250μA | 16A 35A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG506BEN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg507bewt1ge3-datasheets-3635.pdf | 28-LCC (J-Lead) | 11.582mm | 4.57mm | 11.582mm | 12V | 28 | 12 Weeks | 1.182714g | Unknown | 20V | 5V | 450Ohm | 28 | yes | No | 1 | 5μA | 1.693W | QUAD | J BEND | 260 | 15V | DG506 | 28 | 16 | Single | 40 | 1 | 114MHz | 20V | Multiplexer | Dual, Single | 5V | -15V | 300Ohm | 85 dB | 10Ohm | BREAK-BEFORE-MAKE | 220ns | 0.03A | 16:1 | ±5V~20V | 1nA | 3pF 13pF | 250ns, 200ns | 1pC | 10 Ω | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA922EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia922edjt1ge3-datasheets-5889.pdf | PowerPAK® SC-70-6 Dual | 6 | 15 Weeks | 6 | yes | EAR99 | No | 1.9W | Dual | 2 | FET General Purpose Power | 60ns | 45 ns | 25 ns | 4.4A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 7.8W | 4.5A | 0.072Ohm | 30V | 2 N-Channel (Dual) | 64m Ω @ 3A, 4.5V | 1.4V @ 250μA | 4.5A | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9252EN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 0.8mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg9253ent1e4-datasheets-6421.pdf | 16-WFQFN | 449MHz | 16 | 57.09594mg | 16V | 2.7V | 182Ohm | 16 | yes | No | 1 | 525mW | QUAD | 260 | 5V | DG9252 | 16 | 4 | 40 | 0.01mA | 2 | 455 ns | 136 ns | 5V | Multiplexer | Dual, Single | 2.7V | -5V | 182Ohm | 45 dB | 3.1Ohm | BREAK-BEFORE-MAKE | 131ns | 369ns | 2.7V~16V ±2.7V~5V | 0.03A | 4:1 | SP4T | 1nA | 2.2pF 6.6pF | 250ns, 125ns | 4.1pC | 3.1 Ω | -67dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ914DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-siz914dtt1ge3-datasheets-6251.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 13 Weeks | 8 | EAR99 | unknown | 100W | NO LEAD | SIZ914 | 2 | Dual | 2 | R-PDSO-N6 | 40 ns | 127ns | 19 ns | 40 ns | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 22.7W 100W | 16A | 0.0064Ohm | 5 mJ | 30V | 2 N-Channel (Half Bridge) | 1208pF @ 15V | 6.4m Ω @ 19A, 10V | 2.4V @ 250μA | 16A 40A | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-DIP (0.600, 15.24mm) | 39.7mm | 3.31mm | 14.73mm | 15V | 500μA | 28 | 12 Weeks | 4.190003g | Unknown | 44V | 7.5V | 100Ohm | 28 | no | No | 1 | 50μA | e0 | Tin/Lead (Sn/Pb) | 625mW | 2.54mm | 28 | 16 | SINGLE-ENDED MULTIPLEXER | 625mW | Multiplexer or Switches | 1 | 600 ns | 300 ns | 20V | 18V | 350 ns | Dual, Single | 5V | 30mA | 100Ohm | 50Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.02A | 16:1 | 500pA | 8pF 130pF | 200ns, 150ns | 15pC | 5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH472DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish472dnt1ge3-datasheets-7353.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.5W Ta 28W Tc | N-Channel | 997pF @ 15V | 8.9mOhm @ 15A, 10V | 2.5V @ 250μA | 15A Ta 20A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg409dj-datasheets-7506.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 36V | 500μA | 16 | 547.485991mg | 44V | 13V | 100Ohm | 16 | no | Lead, Tin | No | 1 | 10μA | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 16 | 4 | DIFFERENTIAL MULTIPLEXER | 600mW | Multiplexer or Switches | 2 | 150 ns | 150 ns | 20V | 15V | Dual, Single | 5V | 30mA | 8 | 100Ohm | 100Ohm | BREAK-BEFORE-MAKE | 5V~36V ±5V~20V | 4:1 | SP4T | 500pA | 14pF 25pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4425FDY-T1-GE3 | Vishay Siliconix | $0.57 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4425fdyt1ge3-datasheets-7610.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SOIC | 30V | 2.3W Ta 4.8W Tc | P-Channel | 1620pF @ 15V | 9.5mOhm @ 10A, 10V | 2.2V @ 250μA | 12.7A Ta 18.3A Tc | 41nC @ 10V | 4.5V 10V | +16V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG181AP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg180aa-datasheets-7546.pdf | 14-DIP (0.300, 7.62mm) | 19.56mm | 3.05mm | 7.87mm | 15V | 1.5mA | 14 Weeks | 1.620005g | 30Ohm | 14 | unknown | 825mW | 825mW | Not Qualified | 150 ns | 130 ns | 18V | 15V | Dual | 10V | 2 | 30Ohm | 30Ohm | 1:1 | SPST - NC | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7619DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7619dnt1ge3-datasheets-9174.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 3.5W | 1 | Other Transistors | S-XDSO-C5 | 10 ns | 8ns | 12 ns | 45 ns | 10.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 3.5W Ta 27.8W Tc | 24A | 50A | 20 mJ | -30V | P-Channel | 1350pF @ 15V | 21m Ω @ 10.5A, 10V | 3V @ 250μA | 24A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG187AP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg186ap883-datasheets-7590.pdf | 14-DIP (0.300, 7.62mm) | 14 | unknown | 1 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 2.54mm | Multiplexer or Switches | 1 | Not Qualified | 30Ohm | 30Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQSA80ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqsa80enwt1ge3-datasheets-0819.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 14 Weeks | unknown | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 62.5W | 1 | 175°C | S-PDSO-F5 | 9 ns | 19 ns | 18A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 62.5W Tc | 72A | 0.027Ohm | 24.2 mJ | 80V | N-Channel | 1358pF @ 40V | 21m Ω @ 10A, 10V | 2.5V @ 250μA | 18A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2012DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | 6-TSSOP, SC-88, SOT-363 | 1 | SC-70-6 | 1.8Ohm | 2:1 | 1.8V~5.5V | SPDT | 500pA | 20pF | 38ns, 32ns | 20pC | 250mOhm (Max) | -64dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ463EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sqj463ept1ge3-datasheets-1798.pdf | PowerPAK® SO-8 | 12 Weeks | 506.605978mg | Unknown | 8 | No | 30A | 40V | 1 | Single | 83W | 1 | PowerPAK® SO-8 | 5.875nF | 21 ns | 17ns | 51 ns | 121 ns | -30A | 20V | 40V | -2V | 83W Tc | 10mOhm | -40V | P-Channel | 5875pF @ 20V | 10mOhm @ 18A, 10V | 2.5V @ 250μA | 30A Tc | 150nC @ 10V | 10 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201HSDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg201hsdyt1-datasheets-7679.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 16.5V | Contains Lead | 10mA | 16 | 547.485991mg | 25V | 13V | 50Ohm | 16 | no | No | 4 | 4.5mA | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 600mW | Multiplexer or Switches | SPST | 60 ns | 50 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 50Ohm | 85 dB | 0.75Ohm | BREAK-BEFORE-MAKE | NC | 10.8V~16.5V ±15V | 1:1 | SPST - NC | 1nA | 5pF | 60ns, 50ns | -5pC | 1.5 Ω | -100dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM120N06-3M5L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sqm120n063m5lge3-datasheets-2896.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.826mm | 9.652mm | 2 | 12 Weeks | Unknown | 3 | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 19 ns | 23ns | 35 ns | 83 ns | 120A | 20V | SILICON | 60V | 60V | 2V | 375W Tc | 480A | 500 mJ | N-Channel | 14700pF @ 25V | 3.5m Ω @ 29A, 10V | 2.5V @ 250μA | 120A Tc | 330nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG307AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg307aak883-datasheets-7709.pdf | 14-CDIP (0.300, 7.62mm) | 14 | 36V | 13V | 50Ohm | 14 | no | No | 2 | e0 | Tin/Lead (Sn/Pb) | DUAL | 15V | 14 | 825mW | Multiplexer or Switches | +-15V | 2 | 22V | 7V | -15V | 4 | SEPARATE OUTPUT | 50Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 250ns, 150ns | 30pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP90142E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup90142ege3-datasheets-4014.pdf | TO-220-3 | 14 Weeks | EAR99 | e3 | Tin (Sn) | 260 | 30 | 200V | 375W Tc | N-Channel | 31200pF @ 100V | 15.2m Ω @ 30A, 10V | 4V @ 250μA | 90A Tc | 87nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309BDQ-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 10 Weeks | 172.98879mg | 44V | 4V | 85Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | YES | 640mW | GULL WING | 240 | 15V | 0.65mm | 16 | 1 | 30 | Multiplexer or Switches | +-15/12V | 4 | Not Qualified | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | SEPARATE OUTPUT | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI640GPBF | Vishay Siliconix | $1.36 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli640gpbf-datasheets-4754.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 180mOhm | 3 | No | 200V | 1 | Single | 40W | 1 | TO-220-3 | 1.8nF | 8 ns | 83ns | 52 ns | 44 ns | 9.9A | 10V | 200V | 200V | 2V | 40W Tc | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 2 V | 180mOhm @ 5.9A, 5V | 2V @ 250μA | 9.9A Tc | 66nC @ 10V | 180 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG221BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2007 | /files/vishaysiliconix-dg221bdy-datasheets-7675.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 1.5mA | 16 | 8 Weeks | 1.627801g | 18V | 13V | 90Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 15V | 16 | 470mW | Multiplexer or Switches | Not Qualified | 550 ns | 340 ns | 18V | 15V | Dual | 7V | -15V | 4 | SEPARATE OUTPUT | 90Ohm | 90Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 5nA | 8pF 9pF | 550ns, 340ns | 20pC | -90dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA58DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira58dpt1ge3-datasheets-5974.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60A | 40V | 27.7W Tc | N-Channel | 3750pF @ 20V | 2.65m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 75nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG307BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg306bdj-datasheets-7728.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | 100μA | 10 Weeks | 1.620005g | 36V | 13V | 50Ohm | 14 | no | No | 470mW | 14 | 470mW | 2 | 110 ns | 70 ns | 22V | 15V | Dual, Single | 7V | 4 | 50Ohm | 50Ohm | 2:1 | SPDT | ±15V | 5nA | 14pF 14pF | 110ns, 70ns (Typ) | 30pC | -74dB @ 500kHz |
