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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Voltage - Input | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Voltage - Output | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Current - Output | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Frequency - Switching | Main Purpose | Nominal Vgs | Board Type | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Outputs and Type | Regulator Topology | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| IRFP26N60LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp26n60lpbf-datasheets-4818.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 250MOhm | 3 | No | 1 | Single | 470W | 1 | TO-247-3 | 5.02nF | 31 ns | 110ns | 42 ns | 47 ns | 26A | 30V | 600V | 5V | 470W Tc | 210mOhm | 600V | N-Channel | 5020pF @ 25V | 5 V | 250mOhm @ 16A, 10V | 5V @ 250μA | 26A Tc | 180nC @ 10V | 250 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG612DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | No | 4 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG612 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 15-3V | 500MHz | SPST | 50 ns | 35 ns | 15V | Dual, Single | 10V | -3V | 4 | SEPARATE OUTPUT | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 10V~18V ±10V~15V | 1:1 | SPST - NO | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU2N80E-GE3 | Vishay Siliconix | $1.32 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu2n80ege3-datasheets-7575.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 9.78mm | 18 Weeks | 1 | 62.5W | 150°C | IPAK (TO-251) | 11 ns | 19 ns | 2.8A | 30V | 800V | 62.5W Tc | 2.38Ohm | 800V | N-Channel | 315pF @ 100V | 2.75Ohm @ 1A, 10V | 4V @ 250μA | 2.8A Tc | 19.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2019DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg2019dnt1e4-datasheets-5316.pdf | 16-VFQFN Exposed Pad | 3mm | 900μm | 3mm | 1μA | 16 | 57.09594mg | No SVHC | 5.5V | 1.8V | 8Ohm | 16 | yes | No | 4 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 850mW | QUAD | 260 | 3V | 0.5mm | DG2019 | 16 | 1 | 40 | 850mW | Multiplexers or Switches | 3/5V | 180MHz | 48 ns | 33 ns | Single | 8 | 4 | 8Ohm | 54 dB | 3Ohm | BREAK-BEFORE-MAKE | 35ns | 65ns | 2:1 | 1.8V~5.5V | SPDT | 1nA | 7.5pF | 48ns, 33ns | -2.46pC | 600m Ω | -72dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP40010EL-GE3 | Vishay Siliconix | $9.33 |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup40010elge3-datasheets-8071.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 375W Tc | TO-220AB | 120A | 300A | 0.0018Ohm | 320 mJ | N-Channel | 11155pF @ 30V | 1.8m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2041DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2043dnt1e4-datasheets-5348.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | 1μA | 16 | 57.09594mg | 5.5V | 1.8V | 1.5Ohm | yes | No | 4 | Palladium/Gold (Pd/Au) - with Nickel (Ni) barrier | 1.88W | QUAD | 260 | 2V | 0.65mm | DG2041 | 16 | 1 | 30 | Multiplexer or Switches | 2/5V | 4 | S-XQCC-N16 | SPST | 42 ns | 32 ns | Single | SEPARATE OUTPUT | 1.5Ohm | 63 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 82ns | NC | 1:1 | 1.8V~5.5V | SPST - NC | 26pF | 42ns, 32ns | 3pC | 300m Ω (Max) | -93dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3457EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sq3457evt1ge3-datasheets-9122.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 5W | 1 | 6-TSOP | 6 ns | 9ns | 6 ns | 18 ns | 6.8A | 20V | 30V | 5W Tc | P-Channel | 705pF @ 15V | 65mOhm @ 6A, 10V | 2.5V @ 250μA | 6.8A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2718DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2718dnt1e4-datasheets-5386.pdf | 16-VFQFN Exposed Pad | 3mm | 900μm | 3mm | 1μA | 16 | 57.09594mg | 3.6V | 1.65V | 600mOhm | 16 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.385W | QUAD | NO LEAD | 260 | 1.8V | 0.5mm | DG2718 | 16 | 2 | 40 | Multiplexer or Switches | 1.8/3V | 2 | Not Qualified | 57 ns | 45 ns | Single | SEPARATE OUTPUT | 600mOhm | 74 dB | BREAK-BEFORE-MAKE | 55ns | 94ns | 2:2 | 1.65V~3.6V | DPDT | 1nA | 102pF | 57ns, 45ns | 232pC | 50m Ω | -75dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1013X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si1013rt1ge3-datasheets-5895.pdf | SC-89, SOT-490 | 1.7mm | 800μm | 950μm | Lead Free | 3 | 14 Weeks | 29.993795mg | Unknown | 1.2Ohm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 3 | 1 | Single | 30 | 250mW | 1 | Other Transistors | 5 ns | 9ns | 9 ns | 35 ns | -400mA | 6V | SILICON | SWITCHING | 20V | -450mV | 250mW Ta | -20V | P-Channel | 1.2 Ω @ 350mA, 4.5V | 450mV @ 250μA (Min) | 350mA Ta | 1.5nC @ 4.5V | 1.8V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2535DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2536dqt1e3-datasheets-8379.pdf | 10-VFDFN Exposed Pad | 3mm | 880μm | 3mm | 3V | 1μA | 10 | 10 Weeks | 50.008559mg | 6V | 1.8V | 500mOhm | 10 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.191W | QUAD | NO LEAD | 260 | 3V | 0.5mm | DG2535 | 10 | 1 | 40 | 1.191W | Multiplexer or Switches | 3V | Not Qualified | 82 ns | 73 ns | Single | 4 | 2 | 500mOhm | 69 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 78ns | 90ns | NO/NC | 2:1 | SPDT | 1nA | 145pF | 82ns, 73ns | 21pC | 50m Ω (Max) | -69dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2366DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2366dst1ge3-datasheets-2125.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | FET General Purpose Power | 5 ns | 12ns | 8 ns | 14 ns | 5.8A | 20V | SILICON | SWITCHING | 30V | 1.2V | 1.25W Ta 2.1W Tc | N-Channel | 335pF @ 15V | 1.2 V | 36m Ω @ 4.5A, 10V | 2.5V @ 250μA | 5.8A Tc | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2733DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | CMOS | 1μA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2731dqt1e3-datasheets-4047.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 3mm | 1mA | 10 | No SVHC | 4.3V | 1.65V | 400mOhm | 10 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2733 | 10 | 1 | 40 | 320mW | Multiplexer or Switches | Not Qualified | 110 ns | 30 ns | Single | 4 | 2 | 450mOhm | 300mOhm | 75 dB | 0.03Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.65V~4.3V | SPDT | 1nA | 104pF | 110ns, 30ns | 9pC | 30m Ω | -75dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7615CDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si7615cdnt1ge3-datasheets-3458.pdf | PowerPAK® 1212-8 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 20V | 33W Tc | P-Channel | 3860pF @ 10V | 9m Ω @ 12A, 4.5V | 1V @ 250μA | 35A Tc | 63nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3535ADB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg3536dbt5e1-datasheets-8351.pdf | 10-WFBGA | 400mOhm | 10 | DG3535 | 2 | 10-Micro Foot® (2x1.5) | SPDT | Single | 400mOhm | 2:1 | 2.7V~3.3V | SPDT | 2nA | 145pF | 82ns, 73ns | 21pC | 50mOhm (Max) | -69dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA415DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sia415djt1ge3-datasheets-5767.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 13 Weeks | Unknown | 35mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-XDSO-N3 | 25 ns | 50ns | 20 ns | 45 ns | -12A | 12V | SILICON | DRAIN | SWITCHING | 20V | -1.5V | 3.5W Ta 19W Tc | 8.4A | 30A | -20V | P-Channel | 1250pF @ 10V | -1.5 V | 35m Ω @ 5.6A, 4.5V | 1.5V @ 250μA | 12A Tc | 47nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442LDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 10μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg441ldy-datasheets-2707.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 12V | 2.7V | 35Ohm | 16 | yes | Tin | unknown | 4 | e3 | Non-Inverting | 650mW | GULL WING | 260 | 5V | 1.27mm | DG442 | 16 | 1 | 40 | 650mW | Multiplexer or Switches | Not Qualified | 280MHz | SPST | 60 ns | 35 ns | 6V | 5V | Dual, Single | 3V | -5V | 30mA | 4 | 30Ohm | 68 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 70ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100m Ω | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3437DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3437dvt1e3-datasheets-9963.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 14 ns | 29ns | 14 ns | 23 ns | 1.1A | 20V | SILICON | SWITCHING | 150V | -4V | 2W Ta 3.2W Tc | 0.75Ohm | -150V | P-Channel | 510pF @ 50V | 750m Ω @ 1.4A, 10V | 4V @ 250μA | 1.4A Tc | 19nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9232DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg9233dyt1-datasheets-2750.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 1μA | 8 | 540.001716mg | 12V | 2.7V | 30Ohm | 8 | yes | unknown | 2 | 1μA | e3 | Matte Tin (Sn) | 400mW | DUAL | GULL WING | 260 | 3V | DG9232 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | 3/5V | Not Qualified | SPST | 75 ns | 50 ns | Single | 2 | SEPARATE OUTPUT | 30Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | 2.7V~12V | SPST - NC | 100pA | 7pF 13pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4835DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4835ddyt1ge3-datasheets-7773.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 18mOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | 44 ns | 100ns | 15 ns | 28 ns | -8.7A | 25V | SILICON | SWITCHING | 30V | -3V | 2.5W Ta 5.6W Tc | -30V | P-Channel | 1960pF @ 15V | 18m Ω @ 10A, 10V | 3V @ 250μA | 13A Tc | 65nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG641DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 3.5mA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500MHz | Lead Free | 6mA | 16 | 665.986997mg | 18V | 10V | 15Ohm | 16 | yes | VIDEO APPLICATION | unknown | 1 | 3.5mA | e3 | MATTE TIN | 600mW | GULL WING | 260 | 15V | 1.27mm | DG641 | 16 | 4 | AUDIO/VIDEO SWITCH | 40 | 600mW | Multiplexer or Switches | 15-3V | Not Qualified | SPST | 70 ns | 50 ns | 15V | 12V | Dual, Single | 10V | -3V | 4 | SEPARATE OUTPUT | 15Ohm | 60 dB | 1Ohm | BREAK-BEFORE-MAKE | 85ns | NO | 3V~15V ±3V~15V | 1:1 | SPST - NO | 10nA | 12pF 12pF | 70ns, 50ns | 19pC | 1 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3477DV-T1-GE3 | Vishay Siliconix | $11.65 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3477dvt1ge3-datasheets-8391.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 14 Weeks | 19.986414mg | Unknown | 17.5mOhm | 6 | No | 1 | 2W | 1 | 6-TSOP | 2.6nF | 10 ns | 10ns | 30 ns | 65 ns | 8A | 10V | 12V | 2W Ta 4.2W Tc | 17.5mOhm | -12V | P-Channel | 2600pF @ 6V | -400 mV | 17.5mOhm @ 9A, 4.5V | 1V @ 250μA | 8A Tc | 90nC @ 10V | 17.5 mΩ | 1.8V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2748DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg2747dnt1e4-datasheets-5407.pdf | 8-UFQFN | 1.4mm | 550μm | 1.4mm | 1μA | 8 | No SVHC | 4.3V | 1.6V | 600mOhm | 8 | yes | 2 | 1μA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 190mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG2748 | 8 | 1 | 40 | 190mW | Multiplexer or Switches | 3V | Not Qualified | 93MHz | SPST | 25 ns | 25 ns | Single | 2 | SEPARATE OUTPUT | 600mOhm | 52 dB | 0.03Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | 1.6V~4.3V | SPST - NC | 2nA | 75pF 55pF | 25ns, 25ns | 10pC | 30m Ω (Max) | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfu220pbf-datasheets-5110.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 1.437803g | 800mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 10 | 2.5W | 1 | FET General Purpose Powers | R-PSSO-G2 | 7.2 ns | 22ns | 13 ns | 19 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 200V | N-Channel | 260pF @ 25V | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 4.8A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG613AEQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg612aent1e4-datasheets-7227.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 100μA | 16 | 172.98879mg | 12V | 2.7V | 72Ohm | 16 | yes | ALSO OPERATE WITH 5V AND 3V SUPPLY | 4 | 1μA | e3 | Matte Tin (Sn) | 450mW | GULL WING | NOT SPECIFIED | 3V | 0.65mm | DG613 | 16 | 1 | NOT SPECIFIED | 450mW | Multiplexer or Switches | Not Qualified | 720MHz | SPST | 55 ns | 35 ns | 5V | Dual, Single | 2.7V | -3V | 4 | SEPARATE OUTPUT | 115Ohm | 62 dB | 0.7Ohm | BREAK-BEFORE-MAKE | 50ns | 90ns | 2.7V~12V ±2.7V~5V | 1:1 | SPST - NO/NC | 100pA | 2pF 3pF | 55ns, 35ns | 1pC | 700m Ω | -90dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIUD406ED-T1-GE3 | Vishay Siliconix | $0.37 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siud406edt1ge3-datasheets-0371.pdf | PowerPAK® 0806 | 14 Weeks | PowerPAK® 0806 | 30V | 1.25W Ta | N-Channel | 17pF @ 15V | 1.46Ohm @ 200mA, 4.5V | 1.1V @ 250μA | 500mA Ta | 0.6nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32451EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32453dbt2ge1-datasheets-8330.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32451 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB422EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sib422edkt1ge3-datasheets-2177.pdf | PowerPAK® SC-75-6L | Lead Free | 14 Weeks | 95.991485mg | Unknown | 30mOhm | 6 | No | 1 | Single | PowerPAK® SC-75-6L Single | 9A | 8V | 20V | 1V | 2.5W Ta 13W Tc | 82mOhm | N-Channel | 30mOhm @ 5A, 4.5V | 1V @ 250μA | 9A Tc | 18nC @ 8V | 30 mΩ | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32101EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32101dbt1ge1-datasheets-4693.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32101 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9310TRPBF | Vishay Siliconix | $1.10 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9310pbf-datasheets-8583.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 7Ohm | 3 | Tin | No | 18A | 400V | 1 | Single | 50W | 1 | D-Pak | 270pF | 11 ns | 10ns | 24 ns | 25 ns | 1.8A | 20V | 400V | 50W Tc | 7Ohm | P-Channel | 270pF @ 25V | -2 V | 7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 13nC @ 10V | 7 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP12117DB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | /files/vishaysiliconix-sip12117dmpt1ge4-datasheets-7345.pdf | 16 Weeks | 4.5V~15V | SIP12117 | 0.6V~5.5V | 3A | Board(s) | 600kHz | DC/DC, Step Down | Fully Populated | 1, Non-Isolated | Buck |
