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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Mfr |
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| SIR186DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sir186dpt1re3-datasheets-1807.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 5W | 150°C | 10 ns | 14 ns | 23A | 20V | 57W Tc | 60V | N-Channel | 1710pF @ 30V | 4.5m Ω @ 15A, 10V | 3.6V @ 250μA | 60A Tc | 37nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7738DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7738dpt1ge3-datasheets-5509.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 10ns | 10 ns | 25 ns | 7.7A | 20V | SILICON | DRAIN | SWITCHING | 5.4W Ta 96W Tc | 30A | 30A | 45 mJ | 150V | N-Channel | 2100pF @ 75V | 38m Ω @ 7.7A, 10V | 4V @ 250μA | 30A Tc | 53nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SQJB46EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
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| IRFBF30STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfbf30strlpbf-datasheets-7017.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | TO-263 (D2Pak) | 1.2nF | 14 ns | 25ns | 30 ns | 90 ns | 3.6A | 20V | 900V | 125W Tc | 3.7Ohm | N-Channel | 1200pF @ 25V | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI2343DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2343dst1ge3-datasheets-3348.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 33 Weeks | 1.437803g | Unknown | 53mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 150°C | 10 ns | 15ns | 15 ns | 31 ns | -4A | 20V | SILICON | SWITCHING | 30V | -1V | 750mW Ta | -30V | P-Channel | 540pF @ 15V | -1 V | 53m Ω @ 4A, 10V | 3V @ 250μA | 3.1A Ta | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIR158DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sir158dpt1re3-datasheets-9659.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 1.8MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 5.4W | 1 | FET General Purpose Power | R-PDSO-C5 | 28 ns | 36ns | 16 ns | 47 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 60A | 30V | N-Channel | 4980pF @ 15V | 1.8m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI4124DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4124dyt1ge3-datasheets-3524.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 30 ns | 14ns | 11 ns | 38 ns | 13.6A | 20V | SILICON | SWITCHING | 40V | 40V | 2.5W Ta 5.7W Tc | 20.5A | 0.0075Ohm | N-Channel | 3540pF @ 20V | 7.5m Ω @ 14A, 10V | 3V @ 250μA | 20.5A Tc | 77nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIE820DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie820dft1ge3-datasheets-4394.pdf | 10-PolarPAK® (S) | 4 | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 30A | 12V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 50A | 80A | 0.0035Ohm | 45 mJ | 20V | N-Channel | 4300pF @ 10V | 3.5m Ω @ 18A, 4.5V | 2V @ 250μA | 50A Tc | 143nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| IRF830BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf830bpbf-datasheets-8568.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | 3 | No | e3 | MATTE TIN OVER NICKEL | 1 | Single | 1 | 8.2 ns | 16ns | 16 ns | 42 ns | 5.3A | 20V | SILICON | SWITCHING | 104W Tc | TO-220AB | 500V | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI1013CX-T1-GE3 | Vishay Siliconix | $0.38 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1013cxt1ge3-datasheets-9530.pdf | SC-89, SOT-490 | 3 | 14 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 3 | 1 | 190mW | 1 | Other Transistors | 1 ns | 8ns | 5 ns | 9 ns | 450mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 190mW Ta | 0.45A | 0.76Ohm | -20V | P-Channel | 45pF @ 10V | 760m Ω @ 400mA, 4.5V | 1V @ 250μA | 450mA Ta | 2.5nC @ 4.5V | 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SIA436DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia436djt1ge3-datasheets-0775.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | No | DUAL | 1 | Single | 3.5W | 1 | FET General Purpose Power | S-PDSO-N3 | 11 ns | 10ns | 8 ns | 30 ns | 12A | 5V | SILICON | DRAIN | SWITCHING | 350mV | 3.5W Ta 19W Tc | 50A | 0.0094Ohm | 8V | N-Channel | 1508pF @ 4V | 9.4m Ω @ 15.7A, 4.5V | 800mV @ 250μA | 12A Tc | 25.2nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||
| IRFBC30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfbc30pbf-datasheets-1456.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 2.2Ohm | 3 | No | 44A | 600V | 1 | Single | 74W | 1 | TO-220AB | 660pF | 11 ns | 13ns | 14 ns | 35 ns | 3.6A | 20V | 600V | 4V | 74W Tc | 810 ns | 2.2Ohm | 600V | N-Channel | 660pF @ 25V | 4 V | 2.2Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 31nC @ 10V | 2.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFP150PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp150pbf-datasheets-2018.pdf | 100V | 41A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 55mOhm | 3 | 1 | Single | 230W | 1 | TO-247-3 | 2.8nF | 16 ns | 120ns | 81 ns | 60 ns | 41A | 20V | 100V | 2V | 230W Tc | 55mOhm | 100V | N-Channel | 2800pF @ 25V | 4 V | 55mOhm @ 25A, 10V | 4V @ 250μA | 41A Tc | 140nC @ 10V | 55 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIHP8N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp8n50dge3-datasheets-2874.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | Tin | No | 1 | Single | 156W | 1 | FET General Purpose Powers | 13 ns | 16ns | 11 ns | 17 ns | 8.7A | 30V | SILICON | SWITCHING | 500V | 500V | 3V | 156W Tc | TO-220AB | 0.85Ohm | 29 mJ | N-Channel | 527pF @ 100V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8.7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRL540SPBF | Vishay Siliconix | $1.05 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl540spbf-datasheets-3549.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 77mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 2.2nF | 8.5 ns | 170ns | 80 ns | 35 ns | 28A | 10V | 100V | 2V | 3.7W Ta 150W Tc | 77mOhm | 100V | N-Channel | 2200pF @ 25V | 77mOhm @ 17A, 5V | 2V @ 250μA | 28A Tc | 64nC @ 5V | 77 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| SQM100N02-3M5L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm100n023m5lge3-datasheets-4095.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 20V | 150W Tc | N-Channel | 5500pF @ 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ASPBF | Vishay Siliconix | $0.34 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc30astrlpbf-datasheets-5227.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | Tin | No | 1 | Single | 74W | 1 | D2PAK | 510pF | 9.8 ns | 13ns | 12 ns | 19 ns | 3.6A | 30V | 600V | 74W Tc | 2.2Ohm | 600V | N-Channel | 510pF @ 25V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 3.6A Tc | 23nC @ 10V | 2.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SQP60N06-15_GE3 | Vishay Siliconix | $1.62 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp60n0615ge3-datasheets-4987.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | unknown | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 107W Tc | TO-220AB | 56A | 190A | 0.015Ohm | 42 mJ | N-Channel | 2480pF @ 25V | 15m Ω @ 30A, 10V | 3.5V @ 250μA | 56A Tc | 50nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP10250E_GE3 | Vishay Siliconix | $1.67 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp10250ege3-datasheets-5267.pdf | TO-220-3 | 12 Weeks | TO-220AB | 250V | 250W Tc | N-Channel | 4050pF @ 25V | 30mOhm @ 15A, 10V | 3.5V @ 250μA | 53A Tc | 75nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irlz14pbf-datasheets-8320.pdf | 60V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 200mOhm | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 10A | 10V | 60V | 2V | 43W Tc | 130 ns | 200mOhm | 60V | N-Channel | 400pF @ 25V | 2 V | 200mOhm @ 6A, 5V | 2V @ 250μA | 10A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||
| SUG80050E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sug80050ege3-datasheets-8985.pdf | TO-247-3 | 25.11mm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 500W | 175°C | 18 ns | 72 ns | 100A | 20V | 500W Tc | 150V | N-Channel | 6250pF @ 75V | 5.4m Ω @ 20A, 10V | 4V @ 250μA | 100A Tc | 165nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD90330E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sud90330ege3-datasheets-0444.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 14 Weeks | EAR99 | unknown | 1 | 125W | 175°C | 12 ns | 30 ns | 35.8A | 20V | 125W Tc | 200V | N-Channel | 1172pF @ 100V | 37.5m Ω @ 12.2A, 10V | 4V @ 250μA | 35.8A Tc | 32nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR104ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir104adpt1re3-datasheets-1183.pdf | PowerPAK® SO-8 | PowerPAK® SO-8 | 100V | 5.4W Ta 100W Tc | N-Channel | 3250pF @ 50V | 6.1mOhm @ 15A, 10V | 4V @ 250μA | 18.8A Ta 81A Tc | 70nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfbe20pbf-datasheets-1770.pdf | 800V | 1.8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 6.5Ohm | 3 | Tin | No | 1 | Single | 54W | 1 | TO-220AB | 530pF | 8.2 ns | 17ns | 27 ns | 58 ns | 1.8A | 20V | 800V | 4V | 54W Tc | 6.5Ohm | 800V | N-Channel | 530pF @ 25V | 4 V | 6.5Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 38nC @ 10V | 6.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQJA70EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja70ept1ge3-datasheets-2212.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 27W Tc | 14.7A | 18A | 0.208Ohm | 5 mJ | N-Channel | 220pF @ 25V | 95m Ω @ 4A, 10V | 3.5V @ 250μA | 14.7A Tc | 7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4174DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4174dyt1ge3-datasheets-3576.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 9.5MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 40 | 2.5W | 1 | 14 ns | 12ns | 9 ns | 19 ns | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 2.5W Ta 5W Tc | 30V | N-Channel | 985pF @ 15V | 9.5m Ω @ 10A, 10V | 2.2V @ 250μA | 17A Tc | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFR9024TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfr9024pbf-datasheets-5404.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | D-Pak | 60V | 2.5W Ta 42W Tc | P-Channel | 570pF @ 25V | 280mOhm @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4186DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4186dyt1ge3-datasheets-5077.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 540.001716mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3W | 1 | 29 ns | 16ns | 13 ns | 40 ns | 35.8A | 20V | SILICON | SWITCHING | 3W Ta 6W Tc | 25.3A | 0.0026Ohm | 20V | N-Channel | 3630pF @ 10V | 2.4 V | 2.6m Ω @ 15A, 10V | 2.4V @ 250μA | 35.8A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI4166DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4166dyt1ge3-datasheets-6071.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 3.9MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 3W | 1 | 30 ns | 19ns | 15 ns | 35 ns | 20.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.2V | 3W Ta 6.5W Tc | 30V | N-Channel | 2730pF @ 15V | 3.9m Ω @ 15A, 10V | 2.4V @ 250μA | 30.5A Tc | 65nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHG47N60AEF-GE3 | Vishay Siliconix | $6.88 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg47n60aefge3-datasheets-7077.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 313W Tc | N-Channel | 3576pF @ 100V | 70mOhm @ 23.5A, 10V | 4V @ 250μA | 40A Tc | 189nC @ 10V | 10V | ±30V |
