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ContactGeneSiC Semiconductor(3996)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Input Type | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Max Voltage Rating (DC) | HTS Code | Contact Resistance | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Continuous Drain Current (ID) | Max Reverse Leakage Current | Configuration | Case Connection | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Reverse Voltage | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Collector Emitter Voltage (VCEO) | Capacitance @ Vr, F | Voltage - Peak Reverse (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Switching Energy | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GA10JT12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | TO-263 | 18 Weeks | No SVHC | 3 | EAR99 | Other Transistors | 25A | N-CHANNEL | 1200V | 170W Tc | 1403pF @ 800V | 120m Ω @ 10A | 25A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA06JT12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga06jt12247-datasheets-6286.pdf | TO-247-3 | 18 Weeks | 38.000013g | 3 | 146W | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 6A | 1200V | 220m Ω @ 6A | 6A Tc 90°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU8G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2004 | 4-SIP, KBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 14 | Straight | 250.25kV | KBU | 2mm | 8A | 300A | 10μA | 10A | 400V | Single Phase | 400V | 10μA @ 400V | 1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC2506T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2016 | /files/genesicsemiconductor-gbpc2506t-datasheets-0813.pdf | 4-Square, GBPC | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 300A | 25A | 600V | 5μA @ 600V | 1.1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR108 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, BR-10 | 4 | 4 Weeks | 10 | PRODUCTION (Last Updated: 5 months ago) | yes | NO | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-W4 | 10A | 150A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 10A | 800V | Single Phase | 1 | 800V | 10μA @ 800V | 1.1V @ 5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DB154G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-EDIP (0.321, 8.15mm) | 4 Weeks | 280Ohm | PRODUCTION (Last Updated: 5 months ago) | 1.5A | 50A | 5μA | 5A | 400V | Single Phase | 400V | 5μA @ 400V | 1.1V @ 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU4M | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2017 | 4-SIP, GBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | GBU | 4A | 150A | 5μA | 5A | 1kV | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBL410G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -50°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2010 | 4-SIP, KBL | 4 | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 28 | Straight | 250.25kV | WIRE | 4 | R-PSIP-W4 | 2mm | 4A | 120A | 5μA | BRIDGE, 4 ELEMENTS | SILICON | 1000V | 5A | 1kV | Single Phase | 1 | 4A | 1kV | 5μA @ 1000V | 1.1V @ 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBL608G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-SIP, KBL | 4 | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | yes | NO | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | 6A | 180A | 5μA | SILICON | 5A | 800V | Single Phase | 1 | 6A | 800V | 5μA @ 800V | 1.1V @ 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU15D | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2016 | 4-SIP, GBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | 15A | 240A | 5μA | 5A | 200V | Single Phase | 200V | 5μA @ 200V | 1.1V @ 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR31 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 4-Square, BR-3 | 4 Weeks | 3 | PRODUCTION (Last Updated: 5 months ago) | 6 | Straight | 30mOhm | 2.54mm | 3A | 50A | 10μA | 10A | 100V | Single Phase | 100V | 10μA @ 100V | 1V @ 1.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ2504G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 4-SIP, KBJ | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 51 | Right Angle | 5.05kV | 4 | Bridge Rectifier Diodes | 600μm | 25A | 350A | 5μA | BRIDGE, 4 ELEMENTS | 5A | 400V | Single Phase | 400V | 10μA @ 400V | 1.05V @ 12.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC5008W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2015 | 4-Square, GBPC-W | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 400A | 50A | 800V | 5μA @ 800V | 1.2V @ 25A | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC1510T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, KBPC-T | 4 Weeks | 4 | PRODUCTION (Last Updated: 5 months ago) | 15A | Single Phase | 1kV | 5μA @ 800V | 1.1V @ 7.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC2502T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-kbpc2502t-datasheets-2484.pdf | 4-Square, KBPC-T | 28.8mm | 25.4mm | 28.8mm | 4 Weeks | 4 | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 4 | Bridge Rectifier Diodes | 25A | 350A | 5μA | Single Phase | 200V | 5μA @ 200V | 1.1V @ 12.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC1506T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-kbpc1506t-datasheets-2507.pdf | 4-Square, KBPC-T | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | Single Phase | 600V | 10μA @ 600V | 1.1V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC1502T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-kbpc1502t-datasheets-2533.pdf | 4-Square, KBPC-T | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 300A | 15A | 200V | 5μA @ 200V | 1.1V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC5006W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, KBPC-W | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 4 | Bridge Rectifier Diodes | 50A | Single Phase | 600V | 5μA @ 600V | 1.1V @ 25A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC50005W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, KBPC-W | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | yes | 4 | Bridge Rectifier Diodes | 50A | Single Phase | 50V | 5μA @ 50V | 1.1V @ 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M3P75A-80 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-m3p75a80-datasheets-0736.pdf | 5-SMD Module | 18 Weeks | 75A | 800A | 10μA | 800V | 800V | Three Phase | 10μA @ 800V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPM308G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-kbpm310g-datasheets-0737.pdf | 4-SIP, KBPM | 7 Weeks | 4 | 60 | Straight | 5.05kV | 400μm | 3A | 80A | 5μA | 5A | 800V | Single Phase | 800V | 5μA @ 50V | 1.1V @ 3A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GAP3SLT33-220FP | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2015 | TO-220-2 Full Pack | 42pF | 18 Weeks | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.70 | GAP3SLT33 | 1 | Rectifier Diodes | 175°C | 300mA | SINGLE | 1.42 °C/W | No Recovery Time > 500mA (Io) | 2A | 1μA | 3.3kV | 0ns | Silicon Carbide Schottky | 3.3kV | 300mA | 0.3A | 42pF @ 1V 1MHz | 3300V | 5μA @ 3300V | 1.7V @ 300mA | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA35XCP12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/genesicsemiconductor-ga35xcp12247-datasheets-9222.pdf | TO-247-3 | 18 Weeks | 3 | Insulated Gate BIP Transistors | N-CHANNEL | 36 ns | 1.2kV | 3V | 3V | 1200V | 800V, 35A, 22 Ω, 15V | 20V | 6.5V | 3V @ 15V, 35A | PT | 50nC | 35A | 2.66mJ (on), 4.35mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSRT250160(A) | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | Three Tower | 10 Weeks | Common Cathode | 250A | 3.3kA | Standard Recovery >500ns, > 200mA (Io) | 15μA | 1.6kV | 1.6kV | Standard | 1.6kV | 250A | 1600V | 15μA @ 600V | 1.2V @ 250A | 250A DC | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSRT250120(A) | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | Three Tower | 10 Weeks | Common Cathode | 250A | 3.3kA | Standard Recovery >500ns, > 200mA (Io) | 15μA | 1.2kV | 1.2kV | Standard | 1.2kV | 250A | 1200V | 15μA @ 600V | 1.2V @ 250A | 250A DC | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST10030 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 2010 | TO-249AB | 3 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | SINGLE | SOLDER LUG | 2 | R-PSFM-D3 | 100A | 1kA | 1μA | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | Schottky | 30V | 100A | 1 | 50A | 2mA @ 20V | 650mV @ 100A | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST160100 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 2010 | TO-249AB | 3 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | SINGLE | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-D3 | 160A | 1.2kA | 1μA | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 100V | Schottky | 100V | 160A | 1 | 1mA @ 20V | 880mV @ 160A | 160A DC | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR12030CT | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount, Through Hole | Chassis Mount | Bulk | 1 (Unlimited) | Solder | 175°C | -40°C | RoHS Compliant | 2012 | Twin Tower | 2 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | 5 | Right Angle | 20mOhm | UPPER | UNSPECIFIED | NOT SPECIFIED | Common Cathode | NOT SPECIFIED | 2 | 2mm | 60A | 650mV | 800A | 1μA | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800A | 1A | 30V | Schottky | 30V | 120A | 1 | 3mA @ 20V | 650mV @ 60A | 120A DC | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR12080CTR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -40°C | RoHS Compliant | 2010 | Twin Tower | 2 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | UNSPECIFIED | Common Cathode | 2 | R-PUFM-X2 | 120A | 800A | 1μA | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 80V | Schottky | 80V | 120A | 1 | 60A | 3mA @ 20V | 840mV @ 60A | 120A DC | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR20020CTR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -40°C | RoHS Compliant | 2010 | Twin Tower | 2 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | Common Anode | 2 | R-PUFM-X2 | 200A | 1.5kA | 1μA | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 20V | Schottky | 20V | 200A | 1 | 100A | 5mA @ 20V | 650mV @ 100A | 200A DC | 1 Pair Common Anode |
