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ContactGeneSiC Semiconductor(3996)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Reach Compliance Code | Max Voltage Rating (DC) | HTS Code | Wire/Cable Gauge | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | RMS Current (Irms) | On-State Current-Max | Max Surge Current | Continuous Drain Current (ID) | Max Reverse Leakage Current | Configuration | Case Connection | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Application | Cable Length | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Trigger Device Type | Voltage - Off State | Repetitive Peak Off-state Voltage | Capacitance @ Vr, F | Voltage - Peak Reverse (Max) | Voltage - DC Reverse (Vr) (Max) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | Circuit Commutated Turn-off Time-Nom | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Structure | Number of SCRs, Diodes | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C |
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| GB02SLT12-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2005 | /files/genesicsemiconductor-gb02slt12220-datasheets-1160.pdf | TO-220-2 | 2 | 18 Weeks | No SVHC | 2 | EAR99 | PD-CASE | 8541.10.00.80 | 42W | NOT SPECIFIED | GB02SLT12 | Single | NOT SPECIFIED | 1 | 2A | 2.9V | 18A | 8μA | CATHODE | EFFICIENCY | 2.32 °C/W | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | 17 ns | Silicon Carbide Schottky | 1.2kV | 2A | 1 | 2A | 138pF @ 1V 1MHz | 1200V | 50μA @ 1200V | 1.8V @ 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GAP05SLT80-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-gap05slt80220-datasheets-8611.pdf | Axial | 18 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 8kV | 50mA | 25pF @ 1V 1MHz | 8000V | 3.8μA @ 8000V | 4.6V @ 50mA | 50mA DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH20040L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20040l-datasheets-2902.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 40V | 200A | 3000A | 1 | 40V | 5mA @ 40V | 600mV @ 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7636-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~225°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | Non-RoHS Compliant | 2013 | TO-276AA | 18 Weeks | 3 | EAR99 | Other Transistors | 4A | N-CHANNEL | 650V | 125W Tc | 324pF @ 35V | 415m Ω @ 4A | 4A Tc 165°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA20JT12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 18 Weeks | 3 | YES | Other Transistors | 45A | N-CHANNEL | 1200V | 282W Tc | 3091pF @ 800V | 60m Ω @ 20A | 45A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA060TH65 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | /files/genesicsemiconductor-ga060th65227sp-datasheets-4073.pdf | SOT-227-2 | 18 Weeks | No SVHC | 3 | Silicon Controlled Rectifiers | 104A | 60000A | SCR | 6.5kV | 6500V | 100mA | 60A | 6.7 µs | Single | 1 SCR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC3502T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2017 | /files/genesicsemiconductor-gbpc3502t-datasheets-0760.pdf | 4-Square, GBPC-T | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | Single Phase | 200V | 5μA @ 200V | 1.1V @ 12.5A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR81 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2017 | 4-Square, BR-8 | 4 Weeks | 8 | PRODUCTION (Last Updated: 5 months ago) | 24 AWG | 8A | 125A | 10μA | 1m | 10A | 100V | Single Phase | 100V | 10μA @ 100V | 1.1V @ 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DB105G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-EDIP (0.321, 8.15mm) | 4 | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | NO | DUAL | NOT SPECIFIED | NOT SPECIFIED | 4 | 1A | 30A | 5μA | SILICON | 5A | 600V | Single Phase | 1 | 1A | 600V | 10μA @ 600V | 1.1V @ 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBP203 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Cable | Through Hole | -50°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-kbp204-datasheets-0360.pdf | 4-SIP, KBP | 4 Weeks | 4 | 32 | Straight | 2mm | 2A | 60A | 10μA | 10A | 200V | Single Phase | 200V | 10μA @ 200V | 1.1V @ 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ4005G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, KBJ | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | KBJ | 4A | 120A | 5μA | 5A | 50V | Single Phase | 50V | 5μA @ 50V | 1.1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR305 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | 125°C | -65°C | Standard | RoHS Compliant | 2010 | 4-Square, BR-3 | 4 Weeks | 3 | PRODUCTION (Last Updated: 5 months ago) | BR-3 | 3A | 50A | 10μA | 10A | 50V | Single Phase | 50V | 10μA @ 50V | 1V @ 1.5A | 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU10K | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-SIP, GBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | 10A | 220A | 5μA | 5A | 800V | Single Phase | 800V | 5μA @ 800V | 1.1V @ 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR68 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-Square, BR-6 | 4 Weeks | 6 | PRODUCTION (Last Updated: 5 months ago) | 6A | 125A | 10μA | 10A | 800V | Single Phase | 800V | 10μA @ 800V | 1V @ 3A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR810 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, BR-8 | 4 Weeks | 8 | PRODUCTION (Last Updated: 5 months ago) | 32 AWG | 8A | 125A | 10μA | 2m | 10A | 1kV | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU1001 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2008 | 4-SIP, KBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 20 | Straight | 5.05kV | 400μm | 10A | 300A | 10μA | 10A | 100V | Single Phase | 100V | 10μA @ 100V | 1.05V @ 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC5002W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2015 | 4-Square, GBPC-W | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 400A | 50A | 200V | 5μA @ 200V | 1.2V @ 25A | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC1508T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-kbpc1508t-datasheets-2476.pdf | 4-Square, KBPC-T | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | Single Phase | 800V | 5μA @ 800V | 1.1V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC2504W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, KBPC-W | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | KBPC-W | 25A | Single Phase | 400V | 5μA @ 400V | 1.1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC25005T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | /files/genesicsemiconductor-gbpc25005t-datasheets-2519.pdf | 4-Square, GBPC | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 300A | 25A | 50V | 5μA @ 50V | 1.1V @ 7.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC2508W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, KBPC-W | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | KBPC-W | 25A | Single Phase | 800V | 5μA @ 800V | 1.1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC3501W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-Square, GBPC-W | 4 | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | UL RECOGNIZED | unknown | UPPER | WIRE | 4 | Not Qualified | S-PUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 0.000005μA | Single Phase | 400A | 1 | 35A | 100V | 5μA @ 100V | 1.1V @ 17.5A | 35A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU8A | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, KBU | 4 Weeks | 4 | 6 | Straight | 250.25kV | KBU | 2mm | 8A | 300A | 10μA | 10A | 50V | Single Phase | 50V | 10μA @ 50V | 1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M3P100A-80 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 5-SMD Module | 18 Weeks | EAR99 | 8541.10.00.80 | 6 | Bridge Rectifier Diodes | 100A | 1.2kA | BRIDGE, 6 ELEMENTS | 10μA | 800V | 800V | Three Phase | 10mA @ 800V | 1.15V @ 100A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M3P75A-60 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2017 | 5-SMD Module | 18 Weeks | 800A | 10μA | 600V | Three Phase | 10μA @ 600V | 75A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRT20040 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2010 | Three Tower | 3 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | Common Cathode | 2 | R-PUFM-X3 | 200A | 1.5kA | 1μA | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky | 40V | 200A | 1 | 100A | 1mA @ 20V | 750mV @ 100A | 200A DC | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRT30040R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2010 | Three Tower | 3 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | UNSPECIFIED | Common Anode | 2 | R-PUFM-X3 | 300A | 2.5kA | 1μA | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky, Reverse Polarity | 40V | 300A | 1 | 150A | 1mA @ 20V | 750mV @ 150A | 300A DC | -55°C~150°C | 1 Pair Common Anode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSRTA30080(A) | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | Three Tower | 10 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 800V | 25μA @ 200V | 1.2V @ 300A | 300A DC | -55°C~150°C | 1 Pair Series Connection | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST12060 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 2010 | TO-249AB | 3 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | SINGLE | SOLDER LUG | 2 | R-PSFM-D3 | 120A | 1.2kA | 1μA | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 60V | Schottky | 60V | 120A | 1 | 60A | 2mA @ 20V | 750mV @ 120A | 120A DC | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSRTA40060(A) | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | /files/genesicsemiconductor-msrta40080a-datasheets-4157.pdf | Three Tower | 10 Weeks | Common Cathode | Three Tower | 400A | 4.15kA | Standard Recovery >500ns, > 200mA (Io) | 25μA | 600V | 600V | Standard | 600V | 400A | 600V | 25μA @ 600V | 1.2V @ 400A | 400A DC | -55°C~150°C | 1 Pair Common Cathode |
