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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | Current - Supply | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Height | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Interface | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Capacitance @ Frequency | Applications | Polarity | Composition | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | RF Type | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Memory Size | Turn On Delay Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Working Voltage | Gain Bandwidth Product | Transistor Element Material | Configuration | Transistor Application | Drain to Source Voltage (Vdss) | Breakdown Voltage | Power - Max | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | Clamping Voltage | Peak Pulse Current | Reverse Standoff Voltage | Peak Pulse Power | Direction | Number of Unidirectional Channels | Bidirectional Channels | Reference Voltage | Voltage Tol-Max | Working Test Current | Collector Emitter Breakdown Voltage | Dynamic Impedance-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | RPM | Drain Current-Max (Abs) (ID) | Drain to Source Resistance | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 2SA1930(Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 200MHz | RoHS Compliant | 2007 | /files/toshibasemiconductorandstorage-2sa1930qj-datasheets-1011.pdf | TO-220-3 Full Pack | Lead Free | 12 Weeks | Copper, Silver, Tin | 2W | Single | 20W | 1 | 200MHz | 2W | 180V | 180V | 2A | 180V | 5V | 50 | 5μA ICBO | PNP | 100 @ 100mA 5V | 1V @ 100mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2206,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2206t6cnoaf-datasheets-6695.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 100V | 2A | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2695,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2695t6canoaf-datasheets-6746.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 60V | 2A | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MQ01ABF032 | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MQ01ABFxxx | Standard | 5°C~55°C | 100.45mmx69.85mmx9.50mm | Not Applicable | RoHS Compliant | 7mm | 6 Weeks | 3.26oz 92.89g | SATA | 5V | 320GB | 5400 RPM | 2.5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HDEPW10GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MG07ACA | 5°C~55°C | 147.00mmx101.85mmx26.10mm | 1 (Unlimited) | RoHS Compliant | 6 Weeks | 5V 12V | 14TB | 3.5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N62TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 20V | 500mW Ta | 2 N-Channel (Dual) | 177pF @ 10V | 85m Ω @ 800mA, 4.5V | 1V @ 1mA | 800mA Ta | 2nC @ 4.5V | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N57NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 12 Weeks | 6 | unknown | 1W | Dual | 4A | 12V | 30V | 30V | 2 N-Channel (Dual) | 310pF @ 10V | 46m Ω @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N815R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 100V | 1.8W Ta | 2 N-Channel (Dual) | 290pF @ 15V | 103m Ω @ 2A, 10V | 2.5V @ 100μA | 2A Ta | 3.1nC @ 4.5V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K329R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | SOT-23-3 Flat Leads | 880μm | 3 | 16 Weeks | unknown | DUAL | NOT SPECIFIED | 1 | NOT SPECIFIED | 1W | 1 | R-PDSO-F3 | 9.2 ns | 6.4 ns | 3.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | 30V | N-Channel | 123pF @ 15V | 126m Ω @ 1A, 4V | 1V @ 1mA | 3.5A Ta | 1.5nC @ 4V | 1.8V 4V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J351R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 12 Weeks | 60V | 2W Ta | P-Channel | 660pF @ 10V | 134m Ω @ 1A, 10V | 2V @ 1mA | 3.5A Ta | 15.1nC @ 10V | 4V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA31273FNG(EL) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 85°C | -40°C | 240MHz~450MHz | 6.8mA | 6.8mA | RoHS Compliant | 2002 | /files/toshibasemiconductorandstorage-ta31273fngel-datasheets-5228.pdf | 20-LSSOP (0.173, 4.40mm Width) | 20 | 3V~5.5V | AM | 20-SSOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK1828TE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | 52 Weeks | unknown | YES | FET General Purpose Powers | Single | 20V | 200mW Ta | 0.05A | N-Channel | 5.5pF @ 3V | 40 Ω @ 10mA, 2.5V | 1.5V @ 100μA | 50mA Ta | 2.5V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2B6.8E,L3F | Toshiba Semiconductor and Storage | $0.18 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2b68el3f-datasheets-2960.pdf | SC-79, SOD-523 | 12 Weeks | 2 | 15pF @ 1MHz | General Purpose | Single | 5V | No | 5.8V | 5V Max | 5V | Bidirectional | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N55NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2017 | 6-WDFN Exposed Pad | 12 Weeks | 6 | yes | 1W | Single | 1W | 2 | 4A | 20V | 30V | 30V | 2 N-Channel (Dual) | 280pF @ 15V | 46m Ω @ 4A, 10V | 2.5V @ 100μA | 2.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S6P2CTC,L3F | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | AVALANCHE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s6p2ctcl3f-datasheets-6613.pdf | 0603 (1608 Metric) | 2 | 12 Weeks | 600pF @ 1MHz | USB | UNIDIRECTIONAL | YES | BOTTOM | 1 | R-XBCC-N2 | SINGLE | SILICON | 5.5V | No | 5.6V | 80A | 5.5V Max | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N7002BFU(T5L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-TSSOP, SC-88, SOT-363 | 300mW | SSM6N7002 | 200mA | 60V | 300mW | 2 N-Channel (Dual) | 17pF @ 25V | 2.1 Ω @ 500mA, 10V | 3.1V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF6A6.8FU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df6a68fulf-datasheets-9881.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 45pF @ 1MHz | General Purpose | No | 6.4V | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN5R203PL,LQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 30V | 610mW Ta 61W Tc | N-Channel | 1975pF @ 15V | 5.2m Ω @ 19A, 10V | 2.1V @ 200μA | 38A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF10G6M4N,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df10g6m4nlf-datasheets-9082.pdf | 10-UFDFN | 300FF | 12 Weeks | 10 | 0.2pF @ 1MHz | General Purpose | 5.5V | No | 5.6V | 2A 8/20μs | 5.5V Max | 25V | 2A | 5.5V | 30W | Bidirectional | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK33S10N1Z,LQ | Toshiba Semiconductor and Storage | $1.27 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | DPAK+ | 2.05nF | 33A | 10V | 100V | 125W Tc | 9.7mOhm | 100V | N-Channel | 2050pF @ 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500μA | 33A Ta | 28nC @ 10V | 9.7 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF10G7M1N,LF | Toshiba Semiconductor and Storage | $0.30 |
Min: 1 Mult: 1 |
download | Steering (Rail to Rail) | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df10g7m1nlf-datasheets-9011.pdf | 10-UFDFN | 500FF | 12 Weeks | 10 | No | 0.3pF @ 1MHz | HDMI | DF10G7M1N | 1 | 5V | 6V | Yes | 1A 8/20μs | 12V Typ | 5V Max | 4 | 12V | 1A | 5V | Unidirectional | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH2R104PL,LQ | Toshiba Semiconductor and Storage | $1.42 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 40V | 830mW Ta 116W Tc | N-Channel | 6230pF @ 20V | 2.1m Ω @ 50A, 10V | 2.4V @ 500μA | 100A Tc | 78nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF3A6.2FV,L3F | Toshiba Semiconductor and Storage | $0.03 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df3a62fvl3f-datasheets-5775.pdf | SOT-723 | 12 Weeks | EAR99 | 8541.10.00.50 | 55pF @ 1MHz | General Purpose | No | 5.8V | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK17A65W,S5X | Toshiba Semiconductor and Storage | $2.45 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S12FU,H3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s12fuh3f-datasheets-3773.pdf | SC-76, SOD-323 | 12 Weeks | 15pF @ 1MHz | General Purpose | Zener | USC | No | 11.4V | 9V | 1 | 9V | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK49N65W5,S1F | Toshiba Semiconductor and Storage | $4.10 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF3A5.6CT(TPL3) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df3a56cttpl3-datasheets-9217.pdf | SC-101, SOT-883 | 65pF | 65pF @ 1MHz | General Purpose | No | 5.3V | 2 | 2.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J412TU,LF | Toshiba Semiconductor and Storage | $0.29 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 1W Ta | P-Channel | 840pF @ 10V | 42.7m Ω @ 3A, 4.5V | 1V @ 1mA | 4A Ta | 12.8nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF5A3.3F(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df5a33fte85lf-datasheets-1221.pdf | SC-74A, SOT-753 | 12 Weeks | EAR99 | 115pF @ 1MHz | General Purpose | 125°C | 4 | Voltage Reference Diodes | 0.2W | No | 3.1V | 4 | 1V | 3.3V | 6% | 5mA | 130Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J134TU,LF | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 3-SMD, Flat Lead | 12 Weeks | 20V | 500mW Ta | P-Channel | 290pF @ 10V | 93m Ω @ 1.5A, 4.5V | 1V @ 1mA | 3.2A Ta | 4.7nC @ 4.5V | 1.5V 4.5V | ±8V |
