Toshiba Semiconductor and Storage(13104)

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Type Series Mount Mounting Type Operating Temperature Packaging Moisture Sensitivity Level (MSL) Termination Max Operating Temperature Min Operating Temperature Technology Frequency Operating Supply Current Operating Mode Current - Supply RoHS Status Published Datasheet Package / Case Capacitance Lead Free Number of Terminations Factory Lead Time Weight Approval Agency Number of Pins Pbfree Code ECCN Code Radiation Hardening Reach Compliance Code HTS Code Capacitance @ Frequency Applications Polarity Composition Surface Mount Max Power Dissipation Voltage - Supply Terminal Position Peak Reflow Temperature (Cel) Base Part Number RF Type Operating Temperature (Max) Number of Channels Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Number of Elements Subcategory JESD-30 Code Supplier Device Package Input Capacitance Max Output Current Forward Current Turn On Delay Time Optoelectronic Device Type Rise Time Fall Time (Typ) Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Working Voltage Configuration Drain to Source Voltage (Vdss) Propagation Delay Breakdown Voltage Voltage - Isolation Power - Max Diode Element Material Power Dissipation-Max Rep Pk Reverse Voltage-Max Power Line Protection Voltage - Breakdown (Min) Current - Peak Pulse (10/1000μs) Voltage - Clamping (Max) @ Ipp Voltage - Reverse Standoff (Typ) Unidirectional Channels Clamping Voltage Peak Pulse Current Reverse Standoff Voltage Peak Pulse Power Direction Number of Unidirectional Channels Bidirectional Channels Reference Voltage Voltage Tol-Max Working Test Current Dynamic Impedance-Max Voltage - Forward (Vf) (Typ) Current - Output High, Low Current - DC Forward (If) (Max) Propagation Delay tpLH / tpHL (Max) Common Mode Transient Immunity (Min) Voltage - Output Supply Reverse Voltage (DC) Output Current per Channel Drain Current-Max (Abs) (ID) Drain to Source Resistance Drain to Source Breakdown Voltage FET Type Input Capacitance (Ciss) (Max) @ Vds Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs FET Feature Rds On Max Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
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download Surface Mount Surface Mount 150°C TJ Cut Tape (CT) 1 (Unlimited) RoHS Compliant 2009 /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf 6-TSSOP, SC-88, SOT-363 300mW SSM6N7002 200mA 60V 300mW 2 N-Channel (Dual) 17pF @ 25V 2.1 Ω @ 500mA, 10V 3.1V @ 250μA Logic Level Gate
DF6A6.8FU,LF DF6A6.8FU,LF Toshiba Semiconductor and Storage
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DF10G6M4N,LF DF10G6M4N,LF Toshiba Semiconductor and Storage
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download U-MOSIX-H Surface Mount 175°C Tape & Reel (TR) 1 (Unlimited) MOSFET (Metal Oxide) 8-PowerVDFN 12 Weeks 40V 830mW Ta 116W Tc N-Channel 6230pF @ 20V 2.1m Ω @ 50A, 10V 2.4V @ 500μA 100A Tc 78nC @ 10V 4.5V 10V ±20V
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SSM6J412TU,LF SSM6J412TU,LF Toshiba Semiconductor and Storage $0.29
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download U-MOSVI Surface Mount 150°C Tape & Reel (TR) 1 (Unlimited) MOSFET (Metal Oxide) RoHS Compliant 6-SMD, Flat Leads 12 Weeks NOT SPECIFIED NOT SPECIFIED 20V 1W Ta P-Channel 840pF @ 10V 42.7m Ω @ 3A, 4.5V 1V @ 1mA 4A Ta 12.8nC @ 4.5V 1.5V 4.5V ±8V
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download U-MOSVI Surface Mount 150°C Tape & Reel (TR) 1 (Unlimited) MOSFET (Metal Oxide) RoHS Compliant 3-SMD, Flat Lead 12 Weeks 20V 500mW Ta P-Channel 290pF @ 10V 93m Ω @ 1.5A, 4.5V 1V @ 1mA 3.2A Ta 4.7nC @ 4.5V 1.5V 4.5V ±8V
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