Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Applications | Polarity | Reference Standard | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Base Part Number | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Gain | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Gain Bandwidth Product | Transistor Element Material | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Continuous Collector Current | Speed | Power - Output | Power - Max | Diode Element Material | Current Rating (Amps) | Max Breakdown Voltage | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Reverse Voltage (DC) | Current - Test | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | hFE Min | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Noise Figure (dB Typ @ f) | Frequency - Transition | Voltage - Test | Number of Drivers/Receivers | Vce Saturation (Max) @ Ib, Ic |
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1SS403,H3F | Toshiba Semiconductor and Storage | $0.20 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2008 | SC-76, SOD-323 | 1.7mm | 900μm | 1.25mm | 2 | 12 Weeks | 32.998845mg | 2 | EAR99 | Silver, Tin | 8541.10.00.70 | AEC-Q101 | 200mW | DUAL | GULL WING | 1SS403 | Single | 1 | 300mA | 1.2V | 2A | Small Signal =< 200mA (Io), Any Speed | SILICON | 1μA | 250V | 2A | 60 ns | Standard | 200V | 100mA | 0.1A | 200V | 3pF @ 0V 1MHz | 1μA @ 200V | 1.2V @ 100mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS294,LF | Toshiba Semiconductor and Storage | $0.23 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 125°C | -55°C | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.5mm | 12 Weeks | 3 | EAR99 | unknown | 150mW | 1SS294 | Single | 100mA | 600mV | Small Signal =< 200mA (Io), Any Speed | 300mA | 5μA | 45V | Schottky | 40V | 100mA | 40V | 25pF @ 0V 1MHz | 5μA @ 40V | 600mV @ 100mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS406,H3F | Toshiba Semiconductor and Storage | $0.17 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | SC-76, SOD-323 | 12 Weeks | Small Signal =< 200mA (Io), Any Speed | Schottky | 3.9pF @ 0V 1MHz | 20V | 500nA @ 20V | 550mV @ 50mA | 50mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMG07(TE12L,Q,M) | Toshiba Semiconductor and Storage | $0.10 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cmg07te12lqm-datasheets-5833.pdf | SOD-128 | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | Standard | 400V | 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS15(TE85L,Q,M) | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 150°C | -40°C | RoHS Compliant | SOD-123F | 12 Weeks | 2 | Single | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 30V | 30A | Schottky | 90pF @ 10V 1MHz | 50μA @ 30V | 520mV @ 3A | 3A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH04(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2013 | SOD-128 | 12 Weeks | No | Single | 20A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 20A | 200V | 35 ns | 35 ns | Standard | 200V | 1A | 10μA @ 200V | 980mV @ 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS08(TE85L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -40°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-crs08te85lqm-datasheets-0358.pdf | 30V | 1.5A | SOD-123F | 90pF | Contains Lead | 2 | No | Standard | CRS08 | Single | S-FLAT (1.6x3.5) | 1.5A | 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 1mA | 30V | 30A | Schottky | 30V | 1.5A | 30V | 1mA @ 30V | 360mV @ 1.5A | 1.5A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CLS03(TE16R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls03te16rq-datasheets-2695.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 345pF @ 10V 1MHz | 60V | 1mA @ 60V | 0.58V @ 10A | 10A DC | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CLS02(TE16R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls02t6lclarq-datasheets-2716.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 420pF @ 10V 1MHz | 40V | 1mA @ 40V | 0.55V @ 10A | 10A DC | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS10E65C,S1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2014 | TO-220-2 | 16 Weeks | 6.000006g | Single | TO-220-2L | 10A | 1.5V | No Recovery Time > 500mA (Io) | 50A | 90μA | 650V | 0 s | Silicon Carbide Schottky | 650V | 10A | 650V | 90μA @ 650V | 1.7V @ 10A | 10A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8F01(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 150°C | -55°C | 20V | RoHS Compliant | /files/toshibasemiconductorandstorage-tpcp8f01te85lfm-datasheets-5781.pdf | 8-SMD, Flat Lead | 16 Weeks | 8 | Load Switch | 3A | PNP, N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5087-O(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | 7GHz | RoHS Compliant | 2014 | SC-61AA | 4 | unknown | 150mW | Single | Other Transistors | NPN | 80mA | 12V | 12V | 12V | 80mA | 5000MHz | 20V | 3V | 80 | NPN | 80 @ 20mA 10V | 1dB ~ 1.1dB @ 500MHz ~ 1GHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK4037(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Cut Tape (CT) | 1 (Unlimited) | 470MHz | RoHS Compliant | 2009 | 3A | SC-70, SOT-323 | 20W | 11.5dB | 3A | 3V | 12V | 36.5dBmW | 250mA | N-Channel | 6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RFM12U7X(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Cut Tape (CT) | 1 (Unlimited) | 520MHz | RoHS Compliant | 2009 | 4A | TO-271AA | unknown | 20W | 10.8dB | 4A | 10V | 20V | 12W | 750mA | N-Channel | 7.2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62003AFG,N,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Driver | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | 2009 | 16-SOIC (0.173, 4.40mm Width) | 16 | 0V~50V | TD6200*A | 16-SOP | 7/0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62003AFG,N | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Driver | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | 16-SOIC (0.173, 4.40mm Width) | 0V~50V | 16-SOP | 7/0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN4B04J(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-74A, SOT-753 | NPN, PNP | 300mW | Dual | 300MHz | 300mW | 30V | 30V | 100mV | 250mV | 500mA | 35V | 5V | 70 | 100μA ICBO | NPN, PNP | 70 @ 100mA 1V | 200MHz | 250mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2003APG,CN | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | RoHS Compliant | 2011 | 16-DIP (0.300, 7.62mm) | 1.47W | ULN200*A | 1.47W | 50V | 1.6V | 500mA | 50μA | 7 NPN Darlington | 1000 @ 350mA 2V | 1.6V @ 500μA, 350mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1B04F(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-74, SOT-457 | 6 | No | 300mW | BIP General Purpose Small Signals | NPN/PNP | 300mW | 30V | 30V | 250mV | 500mA | 35V | 100nA ICBO | NPN, PNP | 70 @ 100mA 1V | 200MHz | 250mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1A01FE-GR,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SOT-563, SOT-666 | 12 Weeks | 6 | unknown | PNP | 100mW | 80MHz | -150mA | 100mW | 50V | 50V | -300mV | 300mV | 150mA | -50V | -5V | 120 | 100nA ICBO | 2 PNP (Dual) | 200 @ 2mA 6V | 300mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC004B,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | RoHS Compliant | TO-225AA, TO-126-3 | 12 Weeks | TO-126N | 10W | 160V | 1.5A | 100nA ICBO | NPN | 140 @ 100mA 5V | 100MHz | 500mV @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC1949-Y,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 200mW | 50V | 500mA | 100nA ICBO | NPN | 120 @ 100mA 1V | 100MHz | 400mV @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC6026MFVGR,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | SOT-723 | 1.2mm | 500μm | 800μm | 12 Weeks | Silver, Tin | 150mW | 60MHz | 150mA | 50V | 50V | 150mV | 50V | 150mA | 60V | 5V | 120 | 100nA ICBO | NPN | 200 @ 2mA 6V | 250mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4213BTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | 30MHz | RoHS Compliant | 2009 | SC-70, SOT-323 | 16 Weeks | 3 | EAR99 | Silver, Tin | unknown | 100mW | Single | 100mW | 1 | Other Transistors | 30MHz | NPN | 20V | 20V | 42mV | 20V | 300mA | 50V | 25V | 200 | 100nA ICBO | NPN | 350 @ 4mA 2V | 100mV @ 3mA, 30A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTA1943(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 30MHz | RoHS Compliant | 2009 | TO-3PL | 20.5mm | 26mm | 5.2mm | 16 Weeks | 3 | No | 150W | Single | 150W | 1 | 30MHz | 230V | -3V | 230V | 15A | 230V | -5V | 80 | 5μA ICBO | PNP | 80 @ 1A 5V | 3V @ 800mA, 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD1223(TE16L1,NQ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2010 | /files/toshibasemiconductorandstorage-2sd1223te16l1nq-datasheets-4581.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 63 | Silver, Tin | NPN | 1W | GULL WING | Single | 1 | R-PSSO-G2 | SILICON | COLLECTOR | SWITCHING | 1W | 80V | 1.5V | 80V | 4A | 100V | 5V | 2000 | 20μA ICBO | NPN - Darlington | 1000 @ 3A 2V | 1.5V @ 6mA, 3A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1020-Y,T6KEHF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1761,T6F(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1761fj-datasheets-0998.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 50V | 3A | 100nA ICBO | PNP | 120 @ 100mA 2V | 100MHz | 500mV @ 75mA, 1.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1020-O(F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1020-Y(HIT,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A |
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