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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Filter Type | Capacitance @ Frequency | Applications | Polarity | Reference Standard | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Supply Voltage | Terminal Pitch | Base Part Number | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Logic IC Type | Supplier Device Package | -3db Bandwidth | Input Capacitance | Memory Size | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Logic Function | Gain Bandwidth Product | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | DS Breakdown Voltage-Min | FET Technology | Number of Lines | Current Rating (Max) | Power - Max | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Non-rep Peak Rev Power Dis-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | Clamping Voltage | Peak Pulse Current | Reverse Standoff Voltage | Peak Pulse Power | Max Breakdown Voltage | Power - Peak Pulse | Bidirectional Channels | Number of Bidirectional Channels | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 2SA949-Y(T6ONK1,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa949yte6fm-datasheets-1022.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | PNP | 70 @ 10mA 5V | 120MHz | 800mV @ 1mA, 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA965-O,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa965ote6fm-datasheets-1079.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2229-O(SHP1,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235-O(T6FJT,AF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2383-Y,T6KEHF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2383yt6kehfm-datasheets-1139.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 160V | 1A | 1μA ICBO | NPN | 60 @ 200mA 5V | 100MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235-Y,USNHF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2655-Y(TE6,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2006 | /files/toshibasemiconductorandstorage-2sc2655yt6canofm-datasheets-1130.pdf | TO-226-3, TO-92-3 Long Body | 3 | No | NPN | 900mW | Single | TO-92MOD | 100MHz | 900mW | 500mV | 50V | 2A | 50V | 2A | 50V | 5V | 70 | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC3668-Y,T2F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc3668yt2wnlfj-datasheets-1191.pdf | SC-71 | 1W | 50V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4793,TOA1F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4793fm-datasheets-6713.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 230V | 1A | 1μA ICBO | NPN | 100 @ 100mA 5V | 100MHz | 1.5V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-Y(T6TR1,AF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2129,ALPSQ(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2129alpsqm-datasheets-1290.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 100V | 3A | 100μA ICBO | NPN | 2000 @ 1.5A 3V | 2V @ 12mA, 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA2154MFV-GR(TPL3 | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | SOT-723 | 11 Weeks | unknown | 150mW | Single | Other Transistors | 80MHz | PNP | 150mW | 50V | 50V | 300mV | 150mA | 80MHz | -50V | -5V | 200 | 100nA ICBO | PNP | 200 @ 2mA 6V | 300mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD1221-Y(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd1221yq-datasheets-0605.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 1W | PW-MOLD | 1W | 60V | 1V | 3A | 60V | 3A | 100μA ICBO | NPN | 100 @ 500mA 5V | 3MHz | 1V @ 300mA, 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2129,LS4ALPSQ(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2129alpsqm-datasheets-1290.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 100V | 3A | 100μA ICBO | NPN | 2000 @ 1.5A 3V | 2V @ 12mA, 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC7PCI3212MT,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 200μA | RoHS Compliant | 2013 | 20-UFQFN Exposed Pad | 20 | 12 Weeks | 11.5Ohm | PCI Express® | QUAD | NO LEAD | 3.3V | 0.5mm | 4 | Bus Driver/Transceivers | 3.3V | Not Qualified | R-PQCC-N20 | BUS DRIVER | 11.5GHz | Demultiplexer, Multiplexer | Single | 13.5Ohm | 2:1 | 3V~3.6V | SPDT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HDEPR03GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MG04ACAxxxN | 5°C~55°C | 147.00mmx101.85mmx26.10mm | 1 (Unlimited) | RoHS Compliant | 6 Weeks | 5V 12V | 2TB | 3.5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N58NU,LF | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 12 Weeks | 6 | 1W | 2 | Dual | 26 ns | 9 ns | 4A | 1V | 30V | 30V | 2 N-Channel (Dual) | 129pF @ 15V | 84m Ω @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N16FUTE85LF | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | EAR99 | unknown | 200mW | 2 | Dual | FET General Purpose Powers | 70 ns | 125 ns | 100mA | 1.1V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 20V | 2 N-Channel (Dual) | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N35AFE,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | SOT-563, SOT-666 | 6 | 12 Weeks | YES | FLAT | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 250mW | 0.25A | 2.4Ohm | 10 pF | 2 N-Channel (Dual) | 36pF @ 10V | 1.1 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 0.34nC @ 4.5V | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPW4R008NH,L1Q | Toshiba Semiconductor and Storage | $4.23 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 16 Weeks | 8 | 1 | 25 ns | 8.6ns | 12 ns | 52 ns | 116A | 20V | 80V | 800mW Ta 142W Tc | N-Channel | 5300pF @ 40V | 4m Ω @ 50A, 10V | 4V @ 1mA | 116A Tc | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K361R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 3 | 12 Weeks | yes | unknown | AEC-Q101 | DUAL | 1 | R-PDSO-F3 | 3.5A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 100V | 100V | 1.2W Ta | 14A | 0.069Ohm | 9.1 mJ | N-Channel | 430pF @ 15V | 69m Ω @ 2A, 10V | 2.5V @ 100μA | 3.5A Ta | 3.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K37FS,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SC-75, SOT-416 | 12 Weeks | unknown | 200mA | 20V | 100mW Ta | N-Channel | 12pF @ 10V | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | 200mA Ta | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LB 2.8X4.5U | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Amobeads® | Through Hole | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | Axial, Kinked Radial Bend | EAR99 | 8504.50.80.00 | FERRITE BEAD | 1 | 5A Typ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8208(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | RoHS Compliant | 2003 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 20V | 5A | 8-SOIC (0.173, 4.40mm Width) | Lead Free | 8 | 450mW | TPC*208 | 8-SOP (5.5x6.0) | 780pF | 5ns | 5A | 20V | 450mW | 2 N-Channel (Dual) | 780pF @ 10V | 50mOhm @ 2.5A, 4V | 1.2V @ 200μA | 5A | 9.5nC @ 5V | Logic Level Gate | 50 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2B6M4CT,L3F | Toshiba Semiconductor and Storage | $0.20 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | AVALANCHE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2b6m4ctl3f-datasheets-3472.pdf | SOD-882 | 2 | 12 Weeks | LOW CAPACITANCE | 0.2pF @ 1MHz | BIDIRECTIONAL | YES | BOTTOM | 1 | R-XBCC-N2 | SINGLE | SILICON | 5.5V | 30W | No | 5.6V | 2A 8/20μs | 15V | 5.5V Max | 30W | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8208(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2003 | /files/toshiba-tpc8208te12lqm-datasheets-9989.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | 750mW | TPC*208 | 1.5W | 8-SOP (5.5x6.0) | 780pF | 5ns | 2.7 ns | 5A | 12V | 20V | 450mW | 50mOhm | 20V | 2 N-Channel (Dual) | 780pF @ 10V | 50mOhm @ 2.5A, 4V | 1.2V @ 200μA | 5A | 9.5nC @ 5V | Logic Level Gate | 50 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S6.8MFS,L3M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s68mfsl3m-datasheets-8664.pdf | SOD-923 | 12 Weeks | 0.45pF @ 1MHz | SOD-923 | No | 6V | 3A | 15V | 5V Max | 1 | 45W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCL4201(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 4-XFLGA | 4 | No | 500mW | TPC*201 | 85ns | 250 ns | 12V | 2 N-Channel (Half Bridge) | 720pF @ 10V | 1.2V @ 200μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF5G7M2N,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Steering (Rail to Rail) | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df5g7m2nlf-datasheets-0915.pdf | 5-XFDFN | 12 Weeks | 5 | 0.2pF @ 1MHz | General Purpose | 5-DFN (1.3x0.8) | No | 6V | 2.5A 8/20μs | 20V | 5.5V Max | 4 | 20V | 2.5A | 5.5V | 50W | 50W | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK110P10PL,RQ | Toshiba Semiconductor and Storage | $0.82 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | 16 Weeks |
