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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Interface | Impedance | Contact Plating | Radiation Hardening | HTS Code | Nominal Supply Current | Tolerance | Applications | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Supply Voltage | Terminal Pitch | Base Part Number | Temperature Grade | Operating Temperature (Max) | Operating Temperature (Min) | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Qualification Status | JESD-30 Code | Supplier Device Package | Memory Size | Max Output Voltage | Output Voltage | Oscillator Type | Number of I/O | Memory Type | Peripherals | RAM Size | Forward Current | Output Type | Voltage - Load | Max Input Current | Rise Time | Fall Time (Typ) | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Zener Voltage | Logic Function | Transistor Element Material | Transistor Application | Drain to Source Voltage (Vdss) | Test Current | Function | FET Technology | Number of Outputs | Speed | Output Configuration | Voltage - Isolation | Power - Max | Reverse Breakdown Voltage | ESD Protection | Voltage Tolerance | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Forward (Vf) (Typ) | Rise / Fall Time (Typ) | Current - DC Forward (If) (Max) | Reverse Voltage (DC) | Output Current per Channel | Current - Max | Current - Output / Channel | Voltage - Output (Max) | Speed - Read | Speed - Write | Impedance-Max | Current - Output | Voltage - Supply (Vcc/Vdd) | Program Memory Type | Core Size | Program Memory Size | Connectivity | Data Converter | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Voltage - Cutoff (VGS off) @ Id | Voltage - Breakdown (V(BR)GSS) | Current Drain (Id) - Max | Current - Drain (Idss) @ Vds (Vgs=0) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Motor Type - Stepper | Step Resolution | Motor Type - AC, DC | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Form Factor | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Mfr |
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| TLP781F(GR-LF7,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | 1 (Unlimited) | DC | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp781fyhtp7f-datasheets-7023.pdf | 4-SMD, Gull Wing | 1 | Transistor | 5000Vrms | 1.15V | 2μs 3μs | 60mA | 50mA | 80V | 100% @ 5mA | 300% @ 5mA | 3μs, 3μs | 400mV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1301,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SC-70, SOT-323 | SC-70 | 100 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 30 @ 10mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | 4.7 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP504A-2(GB,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp504af-datasheets-3743.pdf | 16-DIP (0.300, 7.62mm) | 16 | No | 150mW | 4 | 150mW | 55V | 50mA | Transistor | 50mA | 2μs | 3 μs | 2500Vrms | 5V | 400mV | 55V | 10mA | 1.15V | 2μs 3μs | 5V | 50mA | 100% @ 5mA | 600% @ 5mA | 3μs, 3μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 80 @ 10mA, 5V | 200MHz | 300mV @ 250μA, 5mA | 10kOhms | 47kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP631(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp631blf-datasheets-3720.pdf | 6-DIP (0.300, 7.62mm) | Lead Free | 8 Weeks | 6 | 250mW | 1 | 1 | Optocoupler - Transistor Outputs | 55V | Transistor with Base | 60mA | 2μs | 3 μs | 5000Vrms | 400mV | 55V | 50mA | 1.15V | 2μs 3μs | 60mA | 50mA | 50% @ 5mA | 600% @ 5mA | 3μs, 3μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2105,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SC-75, SOT-416 | SSM | 100 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 80 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 2.2 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TMP86PM47AUG(C,JZ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TLCS-870/C | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tmp86pm47augcjz-datasheets-4217.pdf | 44-LQFP | 16 Weeks | 44-LQFP (10x10) | External | 35 | PWM, WDT | 1K x 8 | 16MHz | 1.8V~5.5V | OTP | 8-Bit | 32KB 32K x 8 | SIO, UART/USART | A/D 8x10b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SC-75, SOT-416 | SSM | 100 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 80 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK208-R(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | DEPLETION MODE | RoHS Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.5mm | 3 | 52 Weeks | 7.994566mg | 3 | No | 100mW | DUAL | GULL WING | Single | 1 | 750μA | -30V | SILICON | SWITCHING | 10V | JUNCTION | N-Channel | 8.2pF @ 10V | 400mV @ 100nA | 50V | 6.5mA | 300μA @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2103MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SOT-723 | VESM | 150 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 70 @ 10mA, 5V | 250 MHz | 300mV @ 500μA, 5mA | 22 kOhms | 22 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRZ47(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-crz47te85lqm-datasheets-4095.pdf | SOD-123F | 12 Weeks | No | ±10% | 700mW | Single | 10μA | 47V | 65Ohm | 10μA @ 37.6V | 1V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN4901FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 30 @ 10mA, 5V | 200MHz, 250MHz | 300mV @ 250μA, 5mA | 4.7kOhms | 4.7kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRZ33(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | SOD-123F | 2 | 30Ohm | Silver, Tin | ±10% | 700mW | CRZ33 | Single | 10μA | 33V | 10mA | No | 10% | 30Ohm | 10μA @ 26.4V | 1V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 80 @ 10mA, 5V | 250MHz | 300mV @ 250μA, 5mA | 10kOhms | 47kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB67H303HG | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -30°C~85°C TA | Tube | 1 (Unlimited) | Power MOSFET | 19.37mm | RoHS Compliant | 2016 | 25-SIP Formed Leads | 28.8mm | 4.5mm | 25 | 14 Weeks | Parallel, PWM | 8542.39.00.01 | General Purpose | 8V~42V | ZIG-ZAG | 24V | 1mm | 42V | 8V | BRUSH DC MOTOR CONTROLLER | R-PZIP-T25 | 8V~42V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (2) | 8A | Brushed DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2405,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 80 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 2.2 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC78S121FNG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Power MOSFET | RoHS Compliant | 48-TFSOP (0.240, 6.10mm Width) Exposed Pad | 14 Weeks | Parallel | General Purpose | 4.5V~5.5V | 8V~38V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (8) | 2A | Bipolar | Brushed DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG09SCA18TA | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
SAS | MG09 | 5°C ~ 55°C | 147.00mm x 101.85mm x 26.10mm | - | 5V, 12V | 18TB | Magnetic Disk (HDD) | - | - | - | 3.5" | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB67S109AFTG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Power MOSFET | RoHS Compliant | 2015 | 48-WFQFN Exposed Pad | 16 Weeks | Parallel | General Purpose | 4.75V~5.25V | 10V~47V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 3A | Bipolar | 1 ~ 1/32 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TDTC114Y,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
- | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 79 @ 5mA, 5V | 250 MHz | 300mV @ 500μA, 10mA | 10 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB67H401FTG(O,EL) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | BiCDMOS | RoHS Compliant | 48-VFQFN Exposed Pad | 16 Weeks | Parallel, PWM | General Purpose | 4.75V~5.25V | 10V~47V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 6A | Brushed DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB67S521FTAG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~85°C TA | Tape & Reel (TR) | DMOS | RoHS Compliant | 36-WFQFN Exposed Pad | 17 Weeks | PWM | General Purpose | 2V~5.5V | 10V~34V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (2) | 2.8A | Bipolar | 1, 1/2, 1/4 | Brushed DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB67S101AFTG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Power MOSFET | RoHS Compliant | 2013 | 48-WFQFN Exposed Pad | 16 Weeks | Parallel | General Purpose | 4.75V~5.25V | 10V~47V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 3A | Bipolar | 1, 1/2, 1/4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB67B000AHG | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -30°C~115°C | Tube | 1 (Unlimited) | IGBT | 30-PowerDIP Module | 16 Weeks | PWM | General Purpose | 13.5V~16.5V | 50V~450V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (3) | 2A | Multiphase | Brushless DC (BLDC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB62218AFTG,C8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | DMOS | RoHS Compliant | 2012 | 48-VFQFN Exposed Pad | 17 Weeks | Parallel | General Purpose | 4.75V~5.25V | 48-QFN (7x7) | 10V~38V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 2A | Bipolar | 1, 1/2, 1/4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB6615PG,8 | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Tray | Not Applicable | BIPOLAR | RoHS Compliant | 2012 | 16 | 13 Weeks | NO | DUAL | THROUGH-HOLE | 2.54mm | OTHER | 85°C | -30°C | Motion Control Electronics | 3/5V | 27mA | Not Qualified | R-PDIP-T16 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB67S265FTG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Power MOSFET | RoHS Compliant | 2015 | 48-WFQFN Exposed Pad | 17 Weeks | Parallel, Serial | General Purpose | 4.75V~5.25V | 10V~47V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 2A | Bipolar | 1, 1/2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB67H451FNG(O,EL) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Cut Tape (CT) | 1 (Unlimited) | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 16 Weeks | General Purpose | 2V~5.5V | 8-HSOP | 4.5V~44V | Driver | Half Bridge | 3.5A | Brushed DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB62214AFTG,8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -20°C | DMOS | RoHS Compliant | 2015 | 48-VFQFN Exposed Pad | Parallel | General Purpose | 4.75V~5.25V | 48-QFN (7x7) | 10V~38V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 2A | Bipolar | 1, 1/2, 1/4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB6593FNG(O,EL) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -20°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | Power MOSFET | RoHS Compliant | 2007 | /files/toshiba-tb6593fngoel-datasheets-1277.pdf | 20-LSSOP (0.173, 4.40mm Width) | 3V | 17 Weeks | No SVHC | 20 | PWM | No | 1.2mA | General Purpose | 2.7V~5.5V | TB6593 | 15V | 2.5V~13.5V | AND | Driver - Fully Integrated, Control and Power Stage | 2 | Half Bridge (2) | 1A | Brushed DC |
