Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Packing Method | Number of Functions | Filter Type | Capacitance @ Frequency | Applications | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Memory Size | Inductance | Turn On Delay Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Rated Current | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Height (Max) | Number of Lines | Current Rating (Max) | Threshold Voltage | Power - Max | Power Dissipation-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | Reverse Standoff Voltage | Power - Peak Pulse | Bidirectional Channels | Transition Frequency | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Collector Cutoff (Max) | Transistor Type | Nominal Vgs | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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2SA1930,LBS2DIAQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | /files/toshibasemiconductorandstorage-2sa1930qj-datasheets-1011.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 180V | 2A | 5μA ICBO | PNP | 100 @ 100mA 5V | 200MHz | 1V @ 100mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1869-Y,MTSAQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1869yqj-datasheets-1014.pdf | TO-220-3 Full Pack | TO-220NIS | 10W | 50V | 3A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 600mV @ 200mA, 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1869-Y(Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1869yqj-datasheets-1014.pdf | TO-220-3 Full Pack | TO-220NIS | 10W | 50V | 3A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 600mV @ 200mA, 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1837,HFEYHF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1837fm-datasheets-6654.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 230V | 1A | 1μA ICBO | PNP | 100 @ 100mA 5V | 70MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2229-O(T6MIT1FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2229-Y(SHP,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2235-Y(T6FJT,AF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA965-Y,T6KOJPF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa965ote6fm-datasheets-1079.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1930,ONKQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1930qj-datasheets-1011.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 180V | 2A | 5μA ICBO | PNP | 100 @ 100mA 5V | 200MHz | 1V @ 100mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4682,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4682t6fj-datasheets-1192.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 15V | 3A | 1μA ICBO | NPN | 800 @ 500mA 1V | 150MHz | 500mV @ 30mA, 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5930(T2MITUM,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc5930t2mitumfm-datasheets-1208.pdf | SC-71 | 1W | 600V | 1A | 100μA ICBO | NPN | 40 @ 200mA 5V | 1V @ 75mA, 600mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4793,HFEF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4793fm-datasheets-6713.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 230V | 1A | 1μA ICBO | NPN | 100 @ 100mA 5V | 100MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2655-Y,WNLF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2655yt6canofm-datasheets-1130.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5233BTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | SC-70, SOT-323 | unknown | YES | Other Transistors | Single | NPN | 0.1W | 100mW | 80MHz | 12V | 500mA | 100nA ICBO | NPN | 500 @ 10mA 2V | 130MHz | 250mV @ 10mA, 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2705-O(TE6,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Tape & Box (TB) | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2705otpe6f-datasheets-0445.pdf | TO-226-3, TO-92-3 Long Body | 800mW | 150V | 50mA | 100nA ICBO | NPN | 80 @ 10mA 5V | 200MHz | 1V @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1020-Y,T6NSF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD2206A(T6SEP,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2206t6cnoaf-datasheets-6695.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 120V | 2A | NPN | 2000 @ 1A 2V | 1.5V @ 1mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MQ01ACF050 | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MQ01ACFxxx | 5°C~55°C | 100.45mmx69.85mmx9.50mm | Not Applicable | RoHS Compliant | 6 Weeks | 3.26oz 92.89g | 5V | 500GB | 2.5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HDEPV13GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MG06ACA | 5°C~55°C | 1 (Unlimited) | RoHS Compliant | 6 Weeks | 5V 12V | 6TB | 3.5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N17FU(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/toshiba-ssm6n17fute85lf-datasheets-0493.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | No SVHC | 6 | EAR99 | Silver, Tin | 200mW | Dual | 200mW | 2 | FET General Purpose Powers | 100 ns | 40 ns | 100mA | 7V | 50V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 200mW Ta | 0.1A | 2 N-Channel (Dual) | 7pF @ 3V | 1.5 V | 20 Ω @ 10mA, 4V | 1.5V @ 1μA | 100mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N56FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SOT-563, SOT-666 | 12 Weeks | 150mW | ES6 | 55pF | 800mA | 20V | 150mW | 2 N-Channel (Dual) | 55pF @ 10V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 800mA | 1nC @ 4.5V | Logic Level Gate, 1.5V Drive | 235 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
T2N7002BK,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-t2n7002bklm-datasheets-2487.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | unknown | 400mA | 60V | 320mW Ta | N-Channel | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 400mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J328R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-3 Flat Leads | 3 | 16 Weeks | 3 | No | DUAL | 1 | Single | 2W | 1 | 32 ns | 107 ns | 6A | 8V | SILICON | SWITCHING | 20V | 1W Ta | 6A | 24A | 0.0298Ohm | -20V | P-Channel | 840pF @ 10V | 29.8m Ω @ 3A, 4.5V | 1V @ 1mA | 6A Ta | 12.8nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K72KFS,LF | Toshiba Semiconductor and Storage | $0.18 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SC-75, SOT-416 | 12 Weeks | 60V | 150mW Ta | N-Channel | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 300mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AB 3X2X3SM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Amobeads® | Surface Mount | Cut Tape (CT) | 0.197Lx0.197W 5.00mmx5.00mm | 1 (Unlimited) | RoHS Compliant | /files/toshibasemiconductorandstorage-ab4x2x6sm-datasheets-0940.pdf | 2-SMD, Gull Wing | 5mm | 5mm | 10 Weeks | EAR99 | unknown | 8504.50.80.00 | TAPE AND REEL | 1 | FERRITE BEAD | 3 μH | 6A | 0.169 4.30mm | 1 | 6A Typ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K339R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SOT-23-3 Flat Leads | 12 Weeks | 3 | unknown | 13 ns | 8 ns | 2A | 12V | 40V | 1W Ta | N-Channel | 130pF @ 10V | 185m Ω @ 1A, 8V | 1.2V @ 1mA | 2A Ta | 1.1nC @ 4.2V | 1.8V 8V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DF2B7AFU,H3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2b7afuh3f-datasheets-3274.pdf | SC-76, SOD-323 | 12 Weeks | 8.5pF @ 1MHz | General Purpose | No | 5.8V | 4A 8/20μs | 20V | 5.5V Max | 80W | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N61NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | 6-WDFN Exposed Pad | 6 | 12 Weeks | 2W | NO LEAD | 2 | S-PDSO-N6 | 4A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 4A | 0.033Ohm | 2 N-Channel (Dual) | 410pF @ 10V | 33m Ω @ 4A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DF2S6.2ASL,L3F | Toshiba Semiconductor and Storage | $0.15 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s62asll3f-datasheets-8323.pdf | 0201 (0603 Metric) | 12 Weeks | 32pF @ 1MHz | General Purpose | No | 5.8V | 5V Max | 1 | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8407,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 1.5W | 2 | 8-SOP | 1.19nF | 7.4A | 20V | 30V | 450mW | N and P-Channel | 1190pF @ 10V | 17mOhm @ 4.5A, 10V | 2.3V @ 100μA | 9A 7.4A | 17nC @ 10V | Logic Level Gate | 17 mΩ |
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