Toshiba Semiconductor and Storage(13104)

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Type Series Mount Mounting Type Operating Temperature Packaging Moisture Sensitivity Level (MSL) Max Operating Temperature Min Operating Temperature Technology Operating Mode RoHS Status Published Datasheet Package / Case Capacitance Lead Free Number of Terminations Factory Lead Time Resistance Number of Pins Pbfree Code ECCN Code Radiation Hardening Reach Compliance Code Capacitance @ Frequency Applications Max Power Dissipation Voltage - Supply Terminal Position Terminal Form Peak Reflow Temperature (Cel) Base Part Number Pin Count Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Number of Elements JESD-30 Code Supplier Device Package Input Capacitance Memory Size Turn On Delay Time Rise Time Fall Time (Typ) Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Working Voltage Transistor Element Material Configuration Case Connection Transistor Application Drain to Source Voltage (Vdss) DS Breakdown Voltage-Min FET Technology Power - Max Diode Element Material Power Dissipation-Max Power Line Protection Voltage - Breakdown (Min) Current - Peak Pulse (10/1000μs) Voltage - Clamping (Max) @ Ipp Voltage - Reverse Standoff (Typ) Unidirectional Channels Clamping Voltage Peak Pulse Current Reverse Standoff Voltage Peak Pulse Power Direction Power - Peak Pulse Bidirectional Channels Drain Current-Max (Abs) (ID) Pulsed Drain Current-Max (IDM) Drain to Source Resistance Drain to Source Breakdown Voltage FET Type Input Capacitance (Ciss) (Max) @ Vds Form Factor Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs FET Feature Rds On Max Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
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download SATA III MG06ACA 5°C~55°C 1 (Unlimited) RoHS Compliant 6 Weeks 5V 12V 10TB 3.5
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