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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Number of Functions | Polarity | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Family | Supplier Device Package | Max Output Voltage | Forward Current | Forward Voltage | Output Type | Max Input Current | Turn On Delay Time | Forward Current-Max | Load Capacitance | Rise Time | Fall Time (Typ) | Logic Function | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Propagation Delay | Continuous Collector Current | Number of Outputs | Quiescent Current | Voltage - Isolation | Power - Max | Reverse Breakdown Voltage | Max Breakdown Voltage | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Voltage - Forward (Vf) (Typ) | Current - Output High, Low | Rise / Fall Time (Typ) | Current - DC Forward (If) (Max) | Reverse Voltage (DC) | Output Current per Channel | Current Transfer Ratio | Coll-Emtr Bkdn Voltage-Min | Number of Inputs | Number of Gates | Current - Output / Channel | Voltage - Output (Max) | Logic Type | Schmitt Trigger | Dark Current-Max | Max Propagation Delay @ V, Max CL | Current - Quiescent (Max) | Logic Level - Low | Logic Level - High | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
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| TC7SHU04FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TC7SHU | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tc7shu04felm-datasheets-7080.pdf | SOT-553 | 2V~5.5V | 1 | ESV | 8mA 8mA | 1 | Inverter | 7ns @ 5V, 50pF | 2μA | 0.3V | 1.7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1966FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | SOT-563, SOT-666 | NPN | 100mW | Dual | 2 | BIP General Purpose Small Signal | SILICON | 100mA | 50V | 50V | 300mV | 100mA | 5V | 80 | 100nA ICBO | 2 NPN - Pre-Biased (Dual) | 80 @ 10mA 5V | 250MHz | 300mV @ 250μA, 5mA | 4.7k Ω | 47k Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC74ACT02P | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TC74ACT | Through Hole | Through Hole | -40°C~85°C | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tc74act02p-datasheets-7487.pdf | 14-DIP (0.300, 7.62mm) | 5V | Lead Free | 14 | 14 | yes | unknown | 4 | 4.5V~5.5V | DUAL | NOT SPECIFIED | 5V | 74ACT02 | 14 | NOT SPECIFIED | Gates | 5V | Not Qualified | ACT | 9.5 ns | 50pF | NOR | 8.3 ns | 1 | 4μA | 24mA 24mA | 2 | 4 | NOR Gate | NO | 8.3ns @ 5V, 50pF | 0.8V | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1416,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.5mm | 12 Weeks | 3 | NPN | 200mW | Single | S-Mini | 100mA | 200mW | 50V | 50V | 50V | 100mA | 50V | 100mA | 50V | 7V | 50 | 500nA | NPN - Pre-Biased | 50 @ 10mA 5V | 250MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC74VHC00FTELM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TC74VHC | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | CMOS | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tc74vhc00ftel-datasheets-7766.pdf | 14-TSSOP (0.173, 4.40mm Width) | 5mm | Lead Free | 14 | 14 | No | 4 | 2V~5.5V | DUAL | GULL WING | 5V | 0.65mm | 74VHC00 | 14 | 5.5V | 2V | AHC/VHC/H/U/V | NAND | 7.5 ns | 1 | 2μA | 8mA 8mA | 2 | 4 | NAND Gate | 7.5ns @ 5V, 50pF | 0.5V | 1.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1102MFV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | SOT-723 | 12 Weeks | NPN | 150mW | 100mA | 50V | 50V | 300mV | 100mA | 10V | 30 | 500nA | NPN - Pre-Biased | 50 @ 10mA 5V | 300mV @ 500μA, 5mA | 10 k Ω | 10 k Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP627(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp627f-datasheets-2493.pdf | 4-DIP (0.300, 7.62mm) | 16 Weeks | 4 | UL RECOGNIZED | No | 250mW | 1 | 250mW | 1 | Optocoupler - Transistor Outputs | 300V | 60mA | Darlington | 60mA | 40μs | 15 μs | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 5000Vrms | 5V | 1.2V | 300V | 150mA | 1.15V | 40μs 15μs | 5V | 150mA | 4000 % | 200nA | 1000% @ 1mA | 50μs, 15μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2418,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 200mW | 50V | 100mA | 500nA | PNP - Pre-Biased | 50 @ 10mA 5V | 200MHz | 300mV @ 250μA, 5mA | 47 k Ω | 10 k Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP731(D4-GR,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp731d4grf-datasheets-3794.pdf | 6-DIP (0.300, 7.62mm) | 8 Weeks | 1 | 55V | Transistor with Base | 4000Vrms | 400mV | 1.15V | 2μs 3μs | 60mA | 50mA | 55V | 50% @ 5mA | 600% @ 5mA | 3μs, 3μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1410,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | TO-236-3, SC-59, SOT-23-3 | 10 Weeks | 200mW | 50V | 100mA | 100nA ICBO | NPN - Pre-Biased | 120 @ 1mA 5V | 250MHz | 300mV @ 250μA, 5mA | 4.7 k Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP785(GRL,F | Toshiba Semiconductor and Storage | $0.48 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~110°C | Tube | Not Applicable | DC | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp785f-datasheets-5863.pdf | 4-DIP (0.300, 7.62mm) | 12 Weeks | 4 | UL APPROVED | No | 240mW | 1 | 240mW | 1 | 60mA | Transistor | 25mA | SINGLE | 5000Vrms | 5V | 400mV | 80V | 10mA | 1.15V | 2μs 3μs | 50mA | 80V | 100% @ 5mA | 200% @ 5mA | 3μs, 3μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2426(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | YES | 1 | BIP General Purpose Small Signal | SILICON | PNP | 0.2W | 200mW | -50V | 50V | 800mA | 500nA | PNP - Pre-Biased | 90 @ 100mA 1V | 200MHz | 250mV @ 1mA, 50mA | 1 k Ω | 10 k Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP385(GRL,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp385blle-datasheets-4649.pdf | 6-SOIC (0.295, 7.50mm Width), 4 Leads | 12 Weeks | 4 | 1 | Transistor | 5000Vrms | 1.25V | 2μs 3μs | 50mA | 80V | 100% @ 5mA | 200% @ 5mA | 3μs, 3μs | 300mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2310(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | /files/toshiba-rn2310te85lf-datasheets-3894.pdf | SC-70, SOT-323 | 16 Weeks | 3 | No | PNP | 100mW | RN231* | Single | 100mW | -100mA | 50V | 50V | 50V | 100mA | 120 | 100nA ICBO | PNP - Pre-Biased | 120 @ 1mA 5V | 200MHz | 300mV @ 250μA, 5mA | 4.7 k Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP185(GR,SE | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | Tube | DC | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp185grltlse-datasheets-6801.pdf | 6-SOIC (0.173, 4.40mm Width), 4 Leads | 12 Weeks | UL RECOGNIZED | 1 | 1 | Transistor | 0.05A | SINGLE | 3750Vrms | 1.25V | 2μs 3μs | 80V | 50mA | 80V | 80nA | 100% @ 5mA | 300% @ 5mA | 3μs, 3μs | 300mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2402S,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 3 | 59 | BUILT IN BIAS RESISTANCE RATIO IS 1 | unknown | PNP | 200mW | DUAL | GULL WING | RN240* | 200mW | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN RESISTOR | SWITCHING | -100mA | 50V | 50V | 300mV | 100mA | 200MHz | 500nA | PNP - Pre-Biased | 50 @ 10mA 5V | 200MHz | 300mV @ 250μA, 5mA | 10 k Ω | 10 k Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP388(D4GB-TR,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | DC | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp388d4gbtle-datasheets-8129.pdf | 6-SOIC (0.173, 4.40mm Width), 4 Leads | 12 Weeks | 1 | 6-SO | Transistor | 5000Vrms | 1.25V | 2μs 3μs | 50mA | 50mA | 350V | 100% @ 5mA | 600% @ 5mA | 3μs, 3μs | 400mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1110CT(TPL3) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 2011 | /files/toshibasemiconductorandstorage-rn1110cttpl3-datasheets-8219.pdf | SC-101, SOT-883 | YES | 1 | BIP General Purpose Small Signal | SILICON | NPN | 0.05W | 50mW | 20V | 50mA | 100nA ICBO | NPN - Pre-Biased | 300 @ 1mA 5V | 150mV @ 250μA, 5mA | 4.7 k Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP187(E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp187tple-datasheets-6532.pdf | 6-SOIC (0.179, 4.55mm Width), 4 Leads | 12 Weeks | UL APPROVED | 1 | 1 | Darlington | 0.05A | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3750Vrms | 1.25V | 40μs 15μs | 50mA | 4000% | 300V | 150mA | 300V | 200nA | 1000% @ 1mA | 50μs, 15μs | 1.2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1110(T5L,F,T) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 2014 | /files/toshibasemiconductorandstorage-rn1110cttpl3-datasheets-8219.pdf | SC-75, SOT-416 | SSM | 100mW | 50V | 100mA | 100nA ICBO | NPN - Pre-Biased | 120 @ 1mA 5V | 250MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP292(TPL,E | Toshiba Semiconductor and Storage | $0.47 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | AC, DC | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp292gbtple-datasheets-6962.pdf | 4-SOIC (0.179, 4.55mm Width) | 12 Weeks | 4 | yes | No | 200mW | 1 | 1 | 80V | Transistor | 50mA | 0.05A | SINGLE | 3750Vrms | 300mV | 300mV | 50mA | 1.25V | 2μs 3μs | 50mA | 50000nA | 50% @ 5mA | 600% @ 5mA | 3μs, 3μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2112CT(TPL3) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 2014 | SC-101, SOT-883 | unknown | YES | 1 | BIP General Purpose Small Signal | SILICON | PNP | 0.05W | 50mW | 20V | 50mA | 100nA ICBO | PNP - Pre-Biased | 300 @ 1mA 5V | 150mV @ 250μA, 5mA | 22 k Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP385(GR-TPL,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | Tape & Reel (TR) | 1 (Unlimited) | DC | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp385blle-datasheets-4649.pdf | 6-SOIC (0.295, 7.50mm Width), 4 Leads | 12 Weeks | 4 | 1 | Transistor | 5000Vrms | 1.25V | 2μs 3μs | 50mA | 80V | 100% @ 5mA | 300% @ 5mA | 3μs, 3μs | 300mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2107MFV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2014 | SOT-723 | VESM | 150mW | 50V | 100mA | 500nA | PNP - Pre-Biased | 80 @ 10mA 5V | 300mV @ 250μA, 5mA | 10 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP385(BLL-TPL,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | Tape & Reel (TR) | 1 (Unlimited) | DC | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp385blle-datasheets-4649.pdf | 6-SOIC (0.295, 7.50mm Width), 4 Leads | 12 Weeks | 4 | 1 | Transistor | 5000Vrms | 1.25V | 2μs 3μs | 50mA | 80V | 200% @ 5mA | 400% @ 5mA | 3μs, 3μs | 300mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2117MFV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOT-723 | 12 Weeks | 150mW | 50V | 100mA | 500nA | PNP - Pre-Biased | 30 @ 10mA 5V | 300mV @ 500μA, 5mA | 10 k Ω | 4.7 k Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP283(TP,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~100°C | Tape & Reel (TR) | 1 (Unlimited) | 100°C | -55°C | DC | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp283tpf-datasheets-2622.pdf | 4-SOIC (0.173, 4.40mm Width) | 4 | 200mW | 1 | 200mW | 1 | 4-SOP | 100V | 50mA | 1.15V | Transistor | 2500Vrms | 5V | 400mV | 100V | 50mA | 1.15V | 50mA | 50mA | 50mA | 100V | 100% @ 1mA | 400% @ 1mA | 7.5μs, 70μs | 400mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1110,LF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-75, SOT-416 | 12 Weeks | 100mW | SSM | 100mW | 50V | 300mV | 100mA | 50V | 100mA | 100nA ICBO | NPN - Pre-Biased | 120 @ 1mA 5V | 250MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP759(TP1,J,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~100°C | Tape & Reel (TR) | Not Applicable | DC | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp759tp1jf-datasheets-4318.pdf | 8-DIP (0.300, 7.62mm) | 12 Weeks | 1 | Transistor | 5000Vrms | 1.65V | 25mA | 8mA | 20V | 20% @ 16mA | 200ns, 300ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2107,LF(CT | Toshiba Semiconductor and Storage | $0.23 |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | SC-75, SOT-416 | 16 Weeks | PNP | 100mW | -100mA | -50V | 50V | 100mA | -6V | 80 | 500nA | PNP - Pre-Biased | 80 @ 10mA 5V | 200MHz | 300mV @ 250μA, 5mA | 10 k Ω | 47 k Ω |
