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Toshiba Semiconductor and Storage(13104)

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Type Series Mount Mounting Type Operating Temperature Packaging Size / Dimension Moisture Sensitivity Level (MSL) Max Operating Temperature Min Operating Temperature Frequency Operating Supply Current Operating Mode RoHS Status Published Datasheet Package / Case Length Height Width Lead Free Number of Terminations Factory Lead Time Resistance Number of Pins Pbfree Code ECCN Code Radiation Hardening Reach Compliance Code Applications Polarity Max Power Dissipation Voltage - Supply Terminal Position Terminal Form Supply Voltage Terminal Pitch Number of Channels Element Configuration Power Dissipation Number of Elements Subcategory Power Supplies Qualification Status JESD-30 Code Logic IC Type Supplier Device Package -3db Bandwidth Memory Size Turn On Delay Time Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Logic Function Gain Bandwidth Product Transistor Element Material Configuration Transistor Application Polarity/Channel Type Drain to Source Voltage (Vdss) Supply Type FET Technology Power - Max Max Breakdown Voltage Collector Emitter Breakdown Voltage Collector Emitter Saturation Voltage Collector Emitter Voltage (VCEO) Max Collector Current Transition Frequency Drain Current-Max (Abs) (ID) On-State Resistance (Max) Drain to Source Breakdown Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) FET Type Input Capacitance (Ciss) (Max) @ Vds Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Current - Collector Cutoff (Max) Transistor Type DC Current Gain (hFE) (Min) @ Ic, Vce Frequency - Transition Vce Saturation (Max) @ Ib, Ic Multiplexer/Demultiplexer Circuit Voltage - Supply, Single (V+) Switch Circuit Form Factor Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs FET Feature
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