Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Interface | Impedance | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Capacitance @ Frequency | Tolerance | JESD-609 Code | Terminal Finish | Applications | Voltage | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Base Part Number | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Supplier Device Package | Max Output Voltage | Output Voltage | Forward Current | Forward Voltage | Output Type | Voltage - Load | Max Input Current | Forward Current-Max | Rise Time | Fall Time (Typ) | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Zener Voltage | Transistor Element Material | Configuration | Transistor Application | Drain to Source Voltage (Vdss) | Test Current | Function | FET Technology | Output Configuration | Voltage - Isolation | Power - Max | Power Dissipation-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | Reverse Breakdown Voltage | ESD Protection | Power - Peak Pulse | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Forward (Vf) (Typ) | Rise / Fall Time (Typ) | Current - DC Forward (If) (Max) | Reverse Voltage (DC) | Output Current per Channel | Current Transfer Ratio | Coll-Emtr Bkdn Voltage-Min | Current - Output / Channel | Voltage - Output (Max) | Impedance-Max | Current - Output | Drain to Source Breakdown Voltage | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Voltage - Cutoff (VGS off) @ Id | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Motor Type - Stepper | Step Resolution | Motor Type - AC, DC | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Mfr |
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TLP550(TCCJ,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK39J60W,S1VQ | Toshiba Semiconductor and Storage | $10.19 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk39j60ws1vq-datasheets-4097.pdf | TO-3P-3, SC-65-3 | 16 Weeks | 3 | No | Single | 270W | 1 | 38.8A | 30V | 270W Tc | 600V | N-Channel | 4100pF @ 300V | 65m Ω @ 19.4A, 10V | 3.7V @ 1.9mA | 38.8A Ta | 110nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP512(MBS-SZ,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK6R7P06PL,RQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk6r7p06plrq-datasheets-1472.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 60V | 66W Tc | N-Channel | 1990pF @ 30V | 6.7m Ω @ 23A, 10V | 2.5V @ 300μA | 46A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP731(D4-LF4,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MUZ6V8,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Zener | MUZ | Surface Mount | 150°C (TJ) | SC-70, SOT-323 | 88pF @ 1MHz | General Purpose | USM | No | 6.4V | 10A (8/20μs) | 13V (Typ) | 6.8V | 1 | 180W | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP781F(D4TEE-T7,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~110°C | Tape & Reel (TR) | 1 (Unlimited) | DC | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp781fyhtp7f-datasheets-7023.pdf | 4-DIP (0.400, 10.16mm) | 1 | Transistor | 5000Vrms | 1.15V | 2μs 3μs | 60mA | 50mA | 80V | 50% @ 5mA | 600% @ 5mA | 3μs, 3μs | 400mV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4984,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | 200mW | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 80 @ 10mA, 5V | 250MHz, 200MHz | 300mV @ 250μA, 5mA | 47kOhms | 47kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP785F(GB,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~110°C | 1 (Unlimited) | DC | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp785f-datasheets-5863.pdf | 4-DIP (0.400, 10.16mm) | UL APPROVED | NO | 1 | 1 | Transistor | 0.025A | SINGLE | 5000Vrms | 0.24W | 1.15V | 2μs 3μs | 60mA | 80V | 50mA | 80V | 100% @ 5mA | 600% @ 5mA | 3μs, 3μs | 400mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4909,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
- | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | 200mW | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 70 @ 10mA, 5V | 200MHz, 250MHz | 300mV @ 250μA, 5mA | 47kOhms | 22kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP785(D4GB-F6,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~110°C | 1 (Unlimited) | DC | RoHS Compliant | 4-DIP (0.300, 7.62mm) | 1 | Transistor | 5000Vrms | 1.15V | 2μs 3μs | 60mA | 50mA | 80V | 100% @ 5mA | 600% @ 5mA | 3μs, 3μs | 400mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2306,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SC-70, SOT-323 | SC-70 | 100 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 80 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
4N32(SHORT,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | 100°C | -55°C | DC | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-4n32shortf-datasheets-9603.pdf | 6-DIP (0.300, 7.62mm) | 12 Weeks | 6 | No | 250mW | 4N32 | 1 | 250mW | 1 | 6-DIP | 30V | 80mA | 1.5V | Darlington with Base | 80mA | 2500Vrms | 3V | 1V | 30V | 100mA | 1.15V | 80mA | 100mA | 500 % | 100mA | 30V | 500% @ 10mA | 5μs, 100μs (Max) | 1V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4982FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 50 @ 10mA, 5V | 250MHz, 200MHz | 300mV @ 250μA, 5mA | 10kOhms | 10kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP281(GB-TP,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~100°C | Tape & Reel (TR) | 1 (Unlimited) | DC | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp2814tpjf-datasheets-3860.pdf | 4-SOIC (0.173, 4.40mm Width) | Lead Free | 4 | UL RECOGNIZED | unknown | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 6V | 200mW | 200mW | 1 | 80V | 80V | 50mA | Transistor | 2μs | 3 μs | SINGLE | 2500Vrms | 5V | 400mV | 80V | 50mA | 1.15V | 2μs 3μs | 5V | 50mA | 100% @ 5mA | 600% @ 5mA | 3μs, 3μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2115,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SC-75, SOT-416 | SSM | 100 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 50 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 2.2 kOhms | 10 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK208-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | DEPLETION MODE | RoHS Compliant | 2002 | TO-236-3, SC-59, SOT-23-3 | 3 | 52 Weeks | 7.994566mg | 3 | LOW NOISE | 8541.21.00.95 | 100mW | DUAL | GULL WING | Single | 1 | 6.5mA | -30V | SILICON | SWITCHING | 10V | JUNCTION | N-Channel | 8.2pF @ 10V | 400mV @ 100nA | 50V | 1.2mA @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2905FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 80 @ 10mA, 5V | 200MHz | 300mV @ 250μA, 5mA | 2.2kOhms | 47kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ15(TE85L,Q,M) | Toshiba Semiconductor and Storage | $0.41 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | SOD-123F | 12 Weeks | 2 | 30Ohm | ±10% | 700mW | CRZ15 | Single | 10μA | 15V | 10mA | 30Ohm | 10μA @ 10V | 1V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4989FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 70 @ 10mA, 5V | 250MHz, 200MHz | 300mV @ 250μA, 5mA | 47kOhms | 22kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMZ12(TE12L,Q,M) | Toshiba Semiconductor and Storage | $0.44 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOD-128 | 12 Weeks | 2 | 30Ohm | ±10% | Single | 10μA | 12V | 10mA | 2W | No | 30Ohm | 10μA @ 8V | 1.2V @ 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1104,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SC-75, SOT-416 | SSM | 100 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 80 @ 10mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 47 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ43(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-crz47te85lqm-datasheets-4095.pdf | SOD-123F | 2 | 40Ohm | ±10% | 700mW | Single | 10μA | 43V | 7mA | No | 40Ohm | 10μA @ 34.4V | 1V @ 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1405,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 80 @ 10mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 2.2 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB67H400AFNG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Power MOSFET | RoHS Compliant | 48-TFSOP (0.240, 6.10mm Width) Exposed Pad | 12 Weeks | Parallel, PWM | General Purpose | 4.75V~5.25V | 10V~47V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 6A | Brushed DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2406,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 80 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62213AFG,C8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Power MOSFET | RoHS Compliant | 28-BSOP (0.346, 8.80mm Width) + 2 Heat Tabs | 17 Weeks | Parallel | General Purpose | 4.75V~5.25V | 10V~38V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 2.4A | Bipolar | 1, 1/2, 1/4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TDTC123J,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
- | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 80 @ 10mA, 5V | 250 MHz | 300mV @ 500μA, 10mA | 2.2 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB67S249FTG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Power MOSFET | RoHS Compliant | 2017 | 48-VFQFN Exposed Pad | 17 Weeks | Parallel | General Purpose | 4.75V~5.25V | 10V~47V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (8) | 4.5A | Bipolar | 1, 1/2, 1/4, 1/8, 1/16, 1/32 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP291-4(TP,E) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/storage/upload/TLP291-4TPE.pdf |
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