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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Sensing Method | Capacitance | Length | Height | Width | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | Number of Pins | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Voltage - Input (Max) | Applications | Polarity | Reference Standard | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Max Output Current | Polarization | Output Current | Forward Current | Forward Voltage | Output Type | Max Surge Current | Configuration | Function | Speed | Output Configuration | Current - Output (Max) | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Current Rating (Amps) | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Output Current-Max | Reverse Voltage (DC) | Mode | Sensing Range | Current - Supply (Max) | Voltage - Output (Max) | Current - Quiescent (Iq) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Output | Voltage - Output (Min/Fixed) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Number of Regulators | Protection Features | Voltage Dropout (Max) | PSRR | Test Condition | Frequency - Switching | Current - Startup | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TA58L05S,APNQ(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58l05sapnqm-datasheets-3075.pdf | TO-220-3 Full Pack | 29V | Fixed | Positive | 50mA | 1mA | 250mA | 5V | 1 | Over Current, Over Temperature | 0.4V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA58M12S,Q(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58m12sqj-datasheets-3119.pdf | TO-220-3 Full Pack | 29V | TO-220NIS | Fixed | Positive | 80mA | 1.2mA | 500mA | 12V | 1 | Over Current, Over Temperature, Reverse Polarity | 0.65V @ 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78DS05BP(FJTN,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78ds05bpfj-datasheets-3143.pdf | TO-226-3, TO-92-3 Long Body | 33V | LSTM | Fixed | Positive | 1mA | 1mA | 30mA | 5V | 1 | Over Current, Over Temperature, Over Voltage, Transient Voltage | 0.3V @ 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78DS08BP(T6ND,AF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78ds05bpfj-datasheets-3143.pdf | TO-226-3, TO-92-3 Long Body | 33V | LSTM | Fixed | Positive | 1.2mA | 1.2mA | 30mA | 8V | 1 | Over Current, Over Temperature, Over Voltage, Transient Voltage | 0.3V @ 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78L012AP(6TOJ,AF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -30°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78l015apfm-datasheets-4584.pdf | TO-226-3, TO-92-3 Long Body | 35V | Fixed | Positive | 6.5mA | 150mA | 12V | 1 | Over Current | 1.7V @ 40mA Typ | 41dB (120Hz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78L006AP,T6STF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -30°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78l015apfm-datasheets-4584.pdf | TO-226-3, TO-92-3 Long Body | 35V | LSTM | Fixed | Positive | 6mA | 150mA | 6V | 1 | Over Current | 1.7V @ 40mA Typ | 47dB (120Hz) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78DS05CP,ASHIF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78ds05bpfj-datasheets-3143.pdf | TO-226-3, TO-92-3 Long Body | 33V | LSTM | Fixed | Positive | 1mA | 1mA | 30mA | 5V | 1 | Over Current, Over Temperature, Over Voltage, Transient Voltage | 0.3V @ 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78L005AP,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -30°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78l015apfm-datasheets-4584.pdf | TO-226-3, TO-92-3 Long Body | 35V | LSTM | Fixed | Positive | 6mA | 150mA | 5V | 1 | 1.7V @ 40mA Typ | 49dB (120Hz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA76431S,MEIDENF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta76431st6muratfm-datasheets-3139.pdf | TO-226-3, TO-92-3 Long Body | LSTM | Adjustable | Positive | 36V | 2.495V | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TCS10NPU(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TCS | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | Hall Effect | RoHS Compliant | 2014 | 6-SMD (5 Leads), Flat Lead | Hall Effect | 1.3mA | North Pole | 2.3V~3.6V | UFV | 5mA | North Pole | Push-Pull | Unipolar Switch | 5mA | -2.5mT Trip, -0.3mT Release | 1.3mA | 25°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB6819AFG,C,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 8-SOIC (0.173, 4.40mm Width) | 16 Weeks | 8 | 10V~25V | Critical Conduction (CRM) | 20kHz~150kHz | 72.5μA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN2D03F(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-74, SOT-457 | 12 Weeks | EAR99 | unknown | 300mW | 150°C | Other Diodes | 100mA | 2A | Small Signal =< 200mA (Io), Any Speed | 500 ns | Standard | 400V | 100mA | 100μA @ 400V | 1.3V @ 100mA | 150°C Max | 3 Independent | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN2S01FUTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | unknown | YES | 100°C | Other Diodes | Small Signal =< 200mA (Io), Any Speed | 0.2W | 15V | 20μA | 10V | Schottky | 10V | 20μA @ 10V | 500mV @ 100mA | 100mA | 125°C Max | 3 Independent | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CES521,L3F | Toshiba Semiconductor and Storage | $0.17 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 100°C | -40°C | RoHS Compliant | 2014 | SC-79, SOD-523 | 18 Weeks | CES521 | 1A | Small Signal =< 200mA (Io), Any Speed | Schottky | 30V | 200mA | 26pF @ 0V 1MHz | 30μA @ 30V | 500mV @ 200mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS387,L3F | Toshiba Semiconductor and Storage | $0.33 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-79, SOD-523 | 12 Weeks | unknown | 1SS387 | Small Signal =< 200mA (Io), Any Speed | 4 ns | Standard | 80V | 100mA | 3pF @ 0V 1MHz | 80V | 500nA @ 80V | 1.2V @ 100mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAV99,LM | Toshiba Semiconductor and Storage | $2.37 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 3 | 12 Weeks | EAR99 | 8541.10.00.70 | YES | DUAL | GULL WING | NOT SPECIFIED | 125°C | NOT SPECIFIED | 2 | R-PDSO-G3 | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.15W | 85V | 3ns | Standard | 0.1A | 100V | 200nA @ 80V | 1.25V @ 150mA | 215mA | 150°C Max | 1 Pair Series Connection | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUHS20S30,H3F | Toshiba Semiconductor and Storage | $0.32 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2-SMD, Flat Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 390pF @ 0V 1MHz | 30V | 500μA @ 30V | 410mV @ 2A | 2A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS322(TE85L,F) | Toshiba Semiconductor and Storage | $0.23 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2015 | SC-70, SOT-323 | 3 | 12 Weeks | YES | DUAL | GULL WING | 125°C | 1 | Rectifier Diodes | R-PDSO-G3 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.1W | 45V | Schottky | 300mA | 0.1A | 18pF @ 0V 1MHz | 40V | 5μA @ 40V | 600mV @ 100mA | 100mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CTS520,L3F | Toshiba Semiconductor and Storage | $0.10 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 100°C | -40°C | RoHS Compliant | 2014 | SOD-882 | 12 Weeks | 2 | unknown | Single | 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 30V | 1A | Schottky | 30V | 200mA | 16pF @ 0V 1MHz | 5μA @ 30V | 600mV @ 200mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS403,H3F | Toshiba Semiconductor and Storage | $0.20 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2008 | SC-76, SOD-323 | 1.7mm | 900μm | 1.25mm | 2 | 12 Weeks | 32.998845mg | 2 | EAR99 | Silver, Tin | 8541.10.00.70 | AEC-Q101 | 200mW | DUAL | GULL WING | 1SS403 | Single | 1 | 300mA | 1.2V | 2A | Small Signal =< 200mA (Io), Any Speed | SILICON | 1μA | 250V | 2A | 60 ns | Standard | 200V | 100mA | 0.1A | 200V | 3pF @ 0V 1MHz | 1μA @ 200V | 1.2V @ 100mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS294,LF | Toshiba Semiconductor and Storage | $0.23 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 125°C | -55°C | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.5mm | 12 Weeks | 3 | EAR99 | unknown | 150mW | 1SS294 | Single | 100mA | 600mV | Small Signal =< 200mA (Io), Any Speed | 300mA | 5μA | 45V | Schottky | 40V | 100mA | 40V | 25pF @ 0V 1MHz | 5μA @ 40V | 600mV @ 100mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS406,H3F | Toshiba Semiconductor and Storage | $0.17 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | SC-76, SOD-323 | 12 Weeks | Small Signal =< 200mA (Io), Any Speed | Schottky | 3.9pF @ 0V 1MHz | 20V | 500nA @ 20V | 550mV @ 50mA | 50mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMG07(TE12L,Q,M) | Toshiba Semiconductor and Storage | $0.10 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cmg07te12lqm-datasheets-5833.pdf | SOD-128 | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | Standard | 400V | 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS15(TE85L,Q,M) | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 150°C | -40°C | RoHS Compliant | SOD-123F | 12 Weeks | 2 | Single | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 30V | 30A | Schottky | 90pF @ 10V 1MHz | 50μA @ 30V | 520mV @ 3A | 3A DC | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMH04(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2013 | SOD-128 | 12 Weeks | No | Single | 20A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 20A | 200V | 35 ns | 35 ns | Standard | 200V | 1A | 10μA @ 200V | 980mV @ 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS08(TE85L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -40°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-crs08te85lqm-datasheets-0358.pdf | 30V | 1.5A | SOD-123F | 90pF | Contains Lead | 2 | No | Standard | CRS08 | Single | S-FLAT (1.6x3.5) | 1.5A | 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 1mA | 30V | 30A | Schottky | 30V | 1.5A | 30V | 1mA @ 30V | 360mV @ 1.5A | 1.5A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLS03(TE16R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls03te16rq-datasheets-2695.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 345pF @ 10V 1MHz | 60V | 1mA @ 60V | 0.58V @ 10A | 10A DC | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLS02(TE16R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls02t6lclarq-datasheets-2716.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 420pF @ 10V 1MHz | 40V | 1mA @ 40V | 0.55V @ 10A | 10A DC | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TRS10E65C,S1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2014 | TO-220-2 | 16 Weeks | 6.000006g | Single | TO-220-2L | 10A | 1.5V | No Recovery Time > 500mA (Io) | 50A | 90μA | 650V | 0 s | Silicon Carbide Schottky | 650V | 10A | 650V | 90μA @ 650V | 1.7V @ 10A | 10A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCP8F01(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 150°C | -55°C | 20V | RoHS Compliant | /files/toshibasemiconductorandstorage-tpcp8f01te85lfm-datasheets-5781.pdf | 8-SMD, Flat Lead | 16 Weeks | 8 | Load Switch | 3A | PNP, N-Channel |
