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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| IRF6802SDTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/infineontechnologies-irf6802sdtrpbf-datasheets-3169.pdf | DirectFET™ Isometric SA | Lead Free | 13 Weeks | 8 | EAR99 | No | 1.7W | 1.7W | FET General Purpose Power | 9.7 ns | 50ns | 23 ns | 13 ns | 16A | 16V | 25V | METAL-OXIDE SEMICONDUCTOR | 57A | 25V | 2 N-Channel (Dual) | 1350pF @ 13V | 4.2m Ω @ 16A, 10V | 2.1V @ 35μA | 13nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF9952QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf9952qtr-datasheets-3201.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 26 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 2.3A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 3.5A | 16A | 0.1Ohm | 44 mJ | 30V | N and P-Channel | 190pF @ 15V | 1 V | 100m Ω @ 2.2A, 10V | 3V @ 250μA | 3.5A 2.3A | 14nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| AUIRF7341Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf7341qtr-datasheets-2907.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | compliant | 8541.29.00.95 | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 2.4W | MS-012AA | 5.1A | 42A | 0.05Ohm | 140 mJ | 2 N-Channel (Dual) | 780pF @ 25V | 50m Ω @ 5.1A, 10V | 3V @ 250μA | 5.1A | 44nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7313Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/infineontechnologies-auirf7313qtr-datasheets-9108.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | compliant | 8541.29.00.95 | AEC-Q101 | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | FET General Purpose Power | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2.4W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.4W | MS-012AA | 6.9A | 58A | 0.029Ohm | 450 mJ | 2 N-Channel (Dual) | 755pF @ 25V | 29m Ω @ 6.9A, 10V | 3V @ 250μA | 6.9A | 33nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| TPC8221-H,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 30V | 450mW | 2 N-Channel (Dual) | 830pF @ 10V | 25m Ω @ 3A, 10V | 2.3V @ 100μA | 6A | 12nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7940DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7940dpt1ge3-datasheets-5439.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 17mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7940 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 30 ns | 50ns | 50 ns | 60 ns | 7.6A | 8V | SILICON | DRAIN | 12V | METAL-OXIDE SEMICONDUCTOR | 12V | 2 N-Channel (Dual) | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | 17nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| AUIRF7319QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7319qtr-datasheets-2854.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 26 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 4.9A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 6.5A | 30A | 30V | N and P-Channel | 650pF @ 25V | 1 V | 29m Ω @ 5.8A, 10V | 3V @ 250μA | 6.5A 4.9A | 33nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| AUIRF7309Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-auirf7309qtr-datasheets-8936.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | compliant | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 40 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.4W | MS-012AA | 4A | 16A | 0.05Ohm | N and P-Channel | 520pF @ 15V | 50m Ω @ 2.4A, 10V | 3V @ 250μA | 4A 3A | 25nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| AO4830 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2010 | 8-SOIC (0.154, 3.90mm Width) | 2W | 3.5A | 80V | 2W | 2 N-Channel (Dual) | 770pF @ 40V | 75m Ω @ 3.5A, 10V | 5V @ 250μA | 13nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MP6K14TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-mp6k14tcr-datasheets-2787.pdf | 6-SMD, Flat Leads | 6 | yes | EAR99 | e2 | TIN COPPER | 2W | 260 | *K14 | 6 | 10 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-F6 | 8A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 8A | 0.032Ohm | 2 N-Channel (Dual) | 470pF @ 10V | 25m Ω @ 8A, 10V | 2.5V @ 1mA | 7.3nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI4310BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4310bdyt1e3-datasheets-2886.pdf | 14-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1.47W | 2 | Dual | 2 | 14-SOIC | 2.37nF | 17 ns | 12ns | 12 ns | 53 ns | 9.8A | 20V | 30V | 1.14W 1.47W | 8.5mOhm | 30V | 2 N-Channel (Dual) | 2370pF @ 15V | 11mOhm @ 10A, 10V | 3V @ 250μA | 7.5A 9.8A | 18nC @ 4.5V | Logic Level Gate | 11 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7304Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/infineontechnologies-auirf7304qtr-datasheets-2774.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | 40 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 4.3A | 17A | 0.09Ohm | 2 P-Channel (Dual) | 610pF @ 15V | 90m Ω @ 2.2A, 4.5V | 1.5V @ 250μA | 4.3A | 22nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| MP6M12TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-mp6m12tcr-datasheets-2799.pdf | 6-SMD, Flat Leads | 6 | EAR99 | 2W | DUAL | *M12 | 2 | R-PDSO-F6 | 5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 5A | 12A | 0.063Ohm | N and P-Channel | 250pF @ 10V | 42m Ω @ 5A, 10V | 2.5V @ 1mA | 4nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MP6K13TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-mp6k13tcr-datasheets-2771.pdf | 6-SMD, Flat Leads | 2W | *K13 | MPT6 | 350pF | 6A | 30V | 2W | 2 N-Channel (Dual) | 350pF @ 10V | 31mOhm @ 6A, 10V | 2.5V @ 1mA | 6A | 5nC @ 5V | Logic Level Gate | 31 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MP6K31TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-mp6k31tr-datasheets-1705.pdf | 6-SMD, Flat Leads | 2W | *K31 | MPT6 | 110pF | 2A | 60V | 2W | 2 N-Channel (Dual) | 110pF @ 10V | 290mOhm @ 2A, 10V | 2.5V @ 1mA | 2A | 2nC @ 5V | Logic Level Gate, 4V Drive | 290 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7319Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-auirf7319q-datasheets-2821.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | compliant | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 40 | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 6.5A | 30A | 0.029Ohm | 82 mJ | N and P-Channel | 650pF @ 25V | 29m Ω @ 5.8A, 10V | 3V @ 250μA | 6.5A 4.9A | 33nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| AUIRF7303Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-auirf7303q-datasheets-2837.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | compliant | 8541.29.00.95 | e3 | MATTE TIN | YES | GULL WING | 260 | 40 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.4W | MS-012AA | 4.9A | 20A | 0.05Ohm | 2 N-Channel (Dual) | 515pF @ 25V | 50m Ω @ 2.7A, 10V | 3V @ 100μA | 5.3A | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7316Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf7316qtr-datasheets-9942.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | compliant | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | 40 | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 30A | 0.058Ohm | 140 mJ | 2 P-Channel (Dual) | 710pF @ 25V | 58m Ω @ 4.9A, 10V | 3V @ 250μA | 34nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| BSL806NL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-bsl806nh6327xtsa1-datasheets-1248.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | 500mW | GULL WING | BSL806 | 6 | 2 | R-PDSO-G6 | 7.5 ns | 9.9ns | 3.7 ns | 12 ns | 2.3A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.057Ohm | 28.6 pF | 2 N-Channel (Dual) | 259pF @ 10V | 57m Ω @ 2.3A, 2.5V | 750mV @ 11μA | 1.7nC @ 2.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| AON6922 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2010 | 8-WDFN Exposed Pad | 8 | 2.2W | 2 | FET General Purpose Power | 31A | 12V | 25V | METAL-OXIDE SEMICONDUCTOR | 2W 2.2W | 2 N-Channel (Half Bridge) | 2340pF @ 12.5V | 3.8m Ω @ 20A, 10V | 1.7V @ 250μA | 18A 31A | 32nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ920DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-siz920dtt1ge3-datasheets-2719.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | Unknown | 8 | EAR99 | No | 100W | C BEND | SIZ920 | 2 | Dual | 1 | R-PDSO-C6 | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 39W 100W | 70A | 30V | 2 N-Channel (Half Bridge) | 1260pF @ 15V | 7.1m Ω @ 18.9A, 10V | 2.5V @ 250μA | 35nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| MP6M11TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-mp6m11tcr-datasheets-2769.pdf | 6-SMD, Flat Leads | 6 | EAR99 | unknown | 2W | DUAL | *M11 | 2 | R-PDSO-F6 | 3.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 12A | 0.14Ohm | N and P-Channel | 85pF @ 10V | 98m Ω @ 3.5A, 10V | 2.5V @ 1mA | 1.9nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MP6M14TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-mp6m14tcr-datasheets-2770.pdf | 6-SMD, Flat Leads | 2W | *M14 | 6A | 30V | N and P-Channel | 470pF @ 10V | 25m Ω @ 8A, 10V | 2.5V @ 1mA | 8A 6A | 7.3nC @ 5V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MP6K11TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-mp6k11tcr-datasheets-2762.pdf | 6-SMD, Flat Leads | 6 | yes | EAR99 | e2 | TIN COPPER | 2W | 260 | *K11 | 6 | 10 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-F6 | 3.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 12A | 0.14Ohm | 2 N-Channel (Dual) | 85pF @ 10V | 98m Ω @ 3.5A, 10V | 2.5V @ 1mA | 1.9nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7304QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf7304qtr-datasheets-2774.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 26 Weeks | No SVHC | 8 | EAR99 | HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 8.4 ns | 26ns | 33 ns | 51 ns | 4.3A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -700mV | 17A | 0.09Ohm | -20V | 2 P-Channel (Dual) | 610pF @ 15V | 90m Ω @ 2.2A, 4.5V | 1.5V @ 250μA | 22nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| AUIRF7103Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/infineontechnologies-auirf7103qtr-datasheets-2890.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | compliant | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | 40 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 2.4W | MS-012AA | 3A | 25A | 0.13Ohm | 22 mJ | 2 N-Channel (Dual) | 255pF @ 25V | 130m Ω @ 3A, 10V | 3V @ 250μA | 3A | 15nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| AO4613 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2010 | /files/alphaomegasemiconductorinc-ao4613-datasheets-2677.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 2W | 6.1A | 30V | N and P-Channel | 630pF @ 15V | 24m Ω @ 7.2A, 10V | 3V @ 250μA | 15nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MP6K12TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-mp6k12tcr-datasheets-2788.pdf | 6-SMD, Flat Leads | 6 | EAR99 | 2W | *K12 | 2 | R-PDSO-F6 | 5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 5A | 12A | 0.063Ohm | 2 N-Channel (Dual) | 250pF @ 10V | 42m Ω @ 5A, 10V | 2.5V @ 1mA | 4nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD607 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2008 | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 16 Weeks | 2.1W | 12A | 30V | N and P-Channel Complementary | 1250pF @ 15V | 25m Ω @ 12A, 10V | 2.5V @ 250μA | 12A Tc | 25nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO207PHXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bso207phxuma1-datasheets-2631.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | YES | GULL WING | NOT SPECIFIED | BSO207 | 8 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.6W | 5A | 22.8A | 0.045Ohm | 44 mJ | 2 P-Channel (Dual) | 1650pF @ 15V | 45m Ω @ 5.7A, 4.5V | 1.2V @ 44μA | 5A | 16nC @ 4.5V | Logic Level Gate |
