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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Packaging | Moisture Sensitivity Level (MSL) | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Number of Terminations | Factory Lead Time | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Noise Figure | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | DS Breakdown Voltage-Min | FET Technology | Power - Output | Current Rating (Amps) | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF8S18210WHSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 1.93GHz | ROHS3 Compliant | 2006 | NI-880XS | MRF8S18210 | 17.8dB | 50W | 1.3A | N-Channel | 30V | ||||||||||||||||||||||||||||||||||||||||
| BLP7G22-10,135 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 700MHz~2.2GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nxpusainc-blp7g2210135-datasheets-7482.pdf | 12-VDFN Exposed Pad | YES | BLP7G22 | 12 | 150°C | FET General Purpose Power | 27dB | 2013-06-14 00:00:00 | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2W | 110mA | LDMOS | 28V | ||||||||||||||||||||||||||||||
| AFT26HW050GSR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.69GHz | ROHS3 Compliant | 2006 | /files/nxpusainc-aft26hw050gsr3-datasheets-7514.pdf | NI-780GS | 10 Weeks | EAR99 | 8541.29.00.40 | 260 | 150°C | 40 | FET General Purpose Power | 14.2dB | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 9W | 100mA | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||
| MRF8S19260HR6 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 1.99GHz | ROHS3 Compliant | 2012 | SOT-1110A | EAR99 | 8541.29.00.75 | MRF8S19260 | 18.2dB | 74W | 1.6A | LDMOS (Dual) | 30V | ||||||||||||||||||||||||||||||||||||||
| BLP8G10S-45PGJ | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 28V | 700MHz~1GHz | ROHS3 Compliant | 2006 | /files/nxpusainc-blp8g10s45pgj-datasheets-7516.pdf | SOT-1223-1 | BLP8G10 | 21dB | 45W | LDMOS | |||||||||||||||||||||||||||||||||||||||||
| BLP7G07S-140P,118 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 700MHz~1GHz | ROHS3 Compliant | 2011 | /files/nxpusainc-blp7g07s140p118-datasheets-7486.pdf | SOT-1223-1 | BLP7G07 | 4 | 20.6dB | 35W | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||
| MRF8S9220HR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 70V | 960MHz | ROHS3 Compliant | 2009 | SOT-957A | MRF8S9220 | 19.4dB | 65W | 1.6A | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||
| BLF8G22L-160BV,118 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | SOT-1120B | BLF8G22 | ||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8P9040NBR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 70V | 960MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-272-4 | 4 | EAR99 | 8541.29.00.75 | e3 | MATTE TIN | YES | FLAT | 260 | 225°C | 40 | 2 | 19.1dB | Not Qualified | R-PDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 70V | METAL-OXIDE SEMICONDUCTOR | 4W | 320mA | LDMOS (Dual) | 28V | ||||||||||||||||||||
| BLF6G22LS-130,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blf6g22ls130118-datasheets-7175.pdf | SOT-502B | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF6G22 | NOT SPECIFIED | 1 | 17dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 30W | 34A | 1.1A | 34A | LDMOS | 28V | ||||||||||||||||||
| BLF6G27LS-50BN,112 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | ROHS3 Compliant | 2010 | SOT-1112B | BLF6G27 | 6 | 16.5dB | 2013-06-14 00:00:00 | 3W | 12A | 430mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||
| BLF6G27LS-50BN,118 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | ROHS3 Compliant | 2010 | SOT-1112B | BLF6G27 | 6 | 16.5dB | 2013-06-14 00:00:00 | 3W | 12A | 430mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||
| MRF8S9102NR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 70V | 920MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | OM-780-2 | 2 | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | 225°C | 40 | 1 | FET General Purpose Power | 23.1dB | Not Qualified | R-PDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 70V | METAL-OXIDE SEMICONDUCTOR | 28W | 750mA | LDMOS | 28V | ||||||||||||||||||
| BLC6G22LS-75,112 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | SOT896B | YES | 150°C | FET General Purpose Power | 18.5dB | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 17W | 18A | 690mA | 18A | LDMOS | 28V | ||||||||||||||||||||||||||||||||
| BF1109WR,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 11V | 800MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-bf1109r215-datasheets-6315.pdf | SC-82A, SOT-343 | 4 | EAR99 | LOW NOISE | unknown | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | BF1109 | 4 | 150°C | 40 | 1 | FET General Purpose Power | 20dB | Not Qualified | R-PDSO-G4 | 2013-06-14 00:00:00 | 1.5dB | SILICON | SINGLE | SOURCE | AMPLIFIER | 11V | METAL-OXIDE SEMICONDUCTOR | 30mA | 0.03A | 0.04 pF | N-Channel Dual Gate | 9V | |||||||||||||
| CGHV22100F | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tube | 1 (Unlimited) | 125V | 1.8GHz~2.2GHz | RoHS Compliant | 2015 | 6A | 440162 | 12 Weeks | 20dB | 100W | 500mA | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||
| MRF8S21100HSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.17GHz | ROHS3 Compliant | 2011 | SOT-957A | MRF8S21100 | 18.3dB | NI-780H-2L | 24W | 700mA | N-Channel | 28V | |||||||||||||||||||||||||||||||||||||||
| MRF8P23160WHSR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 65V | 2.32GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/nxpusainc-mrf8p23160whsr3-datasheets-7505.pdf | NI-780-4 | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | YES | DUAL | FLAT | 260 | 225°C | 40 | 1 | FET General Purpose Power | 14.1dB | R-CDFP-F4 | SILICON | SINGLE | SOURCE | AMPLIFIER | 65V | METAL-OXIDE SEMICONDUCTOR | 30W | 600mA | N-Channel | 28V | ||||||||||||||||||||
| MRF6V13250HR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 120V | 1.3GHz | ROHS3 Compliant | 2011 | SOT-957A | EAR99 | MRF6V13250 | 22.7dB | 250W | 100mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||
| MRF6VP11KGSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 110V | 130MHz | ROHS3 Compliant | 2010 | /files/nxpusainc-mrf6vp11kgsr5-datasheets-7507.pdf | NI-1230S-4 GW | 10 Weeks | EAR99 | 8541.29.00.40 | 260 | MRF6VP11 | 150°C | 40 | FET General Purpose Power | 26dB | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1000W | 150mA | LDMOS (Dual) | 50V | ||||||||||||||||||||||||||||||
| MRF8P26080HSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.62GHz | ROHS3 Compliant | 2010 | NI-780S-4 | MRF8P26080 | 15dB | 14W | 300mA | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||||||||||||
| CGHV22200F | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tube | 1 (Unlimited) | 125V | 1.8GHz~2.2GHz | RoHS Compliant | 2015 | 12A | 440162 | 12 Weeks | 18dB | 200W | 1A | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||
| BLF8G22L-160BV,112 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | SOT-1120B | BLF8G22 | |||||||||||||||||||||||||||||||||||||||||||||||
| MRF8P8300HSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 70V | 820MHz | ROHS3 Compliant | 2011 | NI-1230S | MRF8P8300 | 20.9dB | 96W | 2A | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||||||||||||
| MRF8S26120HSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.69GHz | ROHS3 Compliant | 2010 | NI-780S | MRF8S26120 | 15.6dB | 28W | 900mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||
| MRF8S8260HR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 70V | 895MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | NI-880 | 2 | EAR99 | 8541.29.00.75 | YES | DUAL | FLAT | 260 | MRF8S8260 | 40 | 1 | 21.1dB | Not Qualified | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 70V | METAL-OXIDE SEMICONDUCTOR | 70W | 1.5A | LDMOS | 28V | |||||||||||||||||||||
| MRF8HP21130HSR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.17GHz | ROHS3 Compliant | 2006 | NI-780S-4 | 5A991 | 8541.29.00.75 | MRF8HP21130 | 14dB | 28W | 360mA | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||||||||||
| MRF8S9202NR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 70V | 920MHz | ROHS3 Compliant | 2012 | OM-780-2 | EAR99 | 8541.29.00.75 | 19dB | 58W | 1.3A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||
| MRF8P26080HR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.62GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | NI780-4 | 4 | EAR99 | 8541.29.00.75 | YES | FLAT | 260 | MRF8P26080 | 40 | 2 | 15dB | Not Qualified | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 14W | 300mA | LDMOS (Dual) | 28V | ||||||||||||||||||||||
| MRF8HP21130HR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.17GHz | ROHS3 Compliant | 2011 | NI780-4 | 5A991 | 8541.29.00.75 | MRF8HP21130 | 14dB | 28W | 360mA | LDMOS (Dual) | 28V |
