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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Color | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Case Code (Metric) | Case Code (Imperial) | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Noise Figure | Test Voltage | Rise Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Breakdown Voltage | Power - Output | Highest Frequency Band | Current Rating (Amps) | JEDEC-95 Code | Current - Test | Drain Current-Max (Abs) (ID) | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Power Gain-Min (Gp) | Transistor Type | Nominal Vgs | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BF1100R,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 14V | 800MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/nxpusainc-bf1100r215-datasheets-6988.pdf | SOT-143R | 4 | EAR99 | LOW NOISE | 8541.21.00.75 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | BF1100 | 4 | 150°C | 40 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 2013-06-14 00:00:00 | 2dB | SILICON | COMPLEX | SOURCE | AMPLIFIER | 14V | METAL-OXIDE SEMICONDUCTOR | 30mA | 10mA | 0.03A | 0.035 pF | N-Channel Dual Gate | 9V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G38-25,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 3.4GHz~3.6GHz | Non-RoHS Compliant | 2013 | /files/ampleonusainc-blf6g3825112-datasheets-7171.pdf | SOT-608A | BLF6G38 | 15dB | CDFM2 | 4.5W | 8.2A | 225mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-200,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 75V | 1.03GHz~1.09GHz | Non-RoHS Compliant | 2009 | /files/ampleonusainc-bla1011200112-datasheets-7235.pdf | SOT-502A | BLA1011 | 13dB | LDMOST | 200W | 150mA | LDMOS | 36V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G22LS-130,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | /files/ampleonusainc-blf6g22ls130118-datasheets-7175.pdf | SOT-502B | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF6G22 | NOT SPECIFIED | 1 | 17dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 30W | 34A | 1.1A | 34A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5486G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | DEPLETION MODE | RoHS Compliant | 2006 | /files/onsemiconductor-2n5486-datasheets-7135.pdf | 25V | 30mA | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 3 | No SVHC | 3 | OBSOLETE (Last Updated: 3 days ago) | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 2N5486 | 3 | Single | 40 | 310mW | 1 | Other Transistors | Not Qualified | 30mA | 25V | AMPLIFIER | JUNCTION | ULTRA HIGH FREQUENCY B | 2mOhm | 1 pF | 10dB | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||||||||
| J310 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Through Hole | 150°C | -55°C | 100MHz | DEPLETION MODE | Non-RoHS Compliant | /files/onsemiconductor-j310-datasheets-7180.pdf | 25V | 10mA | TO-226-3, TO-92-3 (TO-226AA) | 5.2mm | 5.33mm | 4.19mm | Orange | Lead Free | 3 | 201mg | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 20 hours ago) | no | not_compliant | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | 625mW | BOTTOM | 240 | J310 | 3 | Single | 30 | 350mW | 1 | Other Transistors | 16dB | Not Qualified | 3 dB | 60mA | -25V | AMPLIFIER | 25V | JUNCTION | -25V | 10mA | 2.5 pF | 25V | N-Channel JFET | 10V | ||||||||||||||||||||||||||||||||||||||
| IXZ210N50L | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 175°C | 175MHz | ENHANCEMENT MODE | RoHS Compliant | 2004 | 6-SMD Module | 6 | No SVHC | 6 | yes | EAR99 | YES | 470W | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | 16dB | Not Qualified | 4ns | 10A | SILICON | SINGLE | ISOLATED | AMPLIFIER | 500V | METAL-OXIDE SEMICONDUCTOR | 200W | 1Ohm | N-Channel | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLL1214-35,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 75V | 1.2GHz~1.4GHz | 2011 | /files/ampleonusainc-bll121435112-datasheets-7185.pdf | SOT467C | 13dB | SOT467C | 35W | 50mA | LDMOS | 36V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 14V | 800MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/nxpusainc-bf1100r215-datasheets-6988.pdf | TO-253-4, TO-253AA | 4 | EAR99 | LOW NOISE | unknown | 8541.21.00.75 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | BF1100 | 4 | 150°C | 40 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 2dB | SILICON | COMPLEX | SOURCE | AMPLIFIER | 14V | METAL-OXIDE SEMICONDUCTOR | 30mA | 10mA | 0.03A | 0.035 pF | N-Channel Dual Gate | 9V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| J310G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 125°C | -65°C | 100MHz | DEPLETION MODE | RoHS Compliant | 2006 | /files/onsemiconductor-j310-datasheets-7181.pdf | 25V | 60mA | TO-226-3, TO-92-3 (TO-226AA) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 3 | 453.59237mg | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | No | 8541.21.00.75 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | 350mW | BOTTOM | THROUGH-HOLE | 260 | J310 | 3 | Single | 40 | 350mW | 1 | Other Transistors | 16dB | 25V | AMPLIFIER | 25V | JUNCTION | -25V | 10mA | 2.5 pF | N-Channel JFET | 10V | ||||||||||||||||||||||||||||||||||||||||||
| BLF6G27-10,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | Non-RoHS Compliant | 2011 | SOT-975B | BLF6G27 | 19dB | CDFM2 | 2W | 3.5A | 130mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATF-531P8-BLK | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | SMD/SMT | 150°C | -65°C | 7V | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2008 | 300mA | 8-WFDFN Exposed Pad | 2.1mm | 800μm | 2.1mm | Lead Free | 8 | 12 Weeks | No SVHC | 8 | EAR99 | Tin | No | 135mA | e3 | 1W | DUAL | 260 | ATF-531P8 | 1W | 1 | FET RF Small Signal | 20dB | 0.6dB | 300mA | 1V | 4V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 4V | 7V | HIGH ELECTRON MOBILITY | 24.5dBm | MO-229 | 0.3A | E-pHEMT | 300 mV | ||||||||||||||||||||||||||||||||||||||||
| BLF6G20LS-110,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 1.93GHz~1.99GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | /files/ampleonusainc-blf6g20ls110112-datasheets-7115.pdf | SOT-502B | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF6G20 | NOT SPECIFIED | 1 | 19dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 25W | 29A | 900mA | 29A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATF-34143-TR1 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 5.5V | 2GHz | DEPLETION MODE | Non-RoHS Compliant | 2001 | SC-82A, SOT-343 | 4 | EAR99 | not_compliant | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | NOT SPECIFIED | ATF-34143 | 160°C | NOT SPECIFIED | 1 | Other Transistors | 17.5dB | Not Qualified | R-PDSO-G4 | 0.5dB | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 5.5V | HIGH ELECTRON MOBILITY | 20dBm | 145mA | 60mA | pHEMT FET | 4V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MMBFJ310LT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | 25V | DEPLETION MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-mmbfj310lt1-datasheets-7140.pdf | 25V | 10mA | SOT-23-3 | Contains Lead | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 240 | 3 | Single | 30 | 1 | Other Transistors | Not Qualified | 25V | AMPLIFIER | N-CHANNEL | 0.225W | 25V | JUNCTION | ULTRA HIGH FREQUENCY B | 2.5 pF | 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NE34018-T1 | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 2GHz | Non-RoHS Compliant | SC-82A, SOT-343 | NE340 | 150mW | 16dB | 0.6dB | 80mA | 12dBm | 120mA | 5mA | 4V | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G27-10,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | Non-RoHS Compliant | 2011 | SOT-975B | BLF6G27 | 19dB | CDFM2 | 2W | 3.5A | 130mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATF-54143-TR1G | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2001 | 5V | 120mA | SC-82A, SOT-343 | Lead Free | 4 | 6 Weeks | No SVHC | 4 | EAR99 | Tin | No | e3 | 725mW | DUAL | GULL WING | 260 | ATF-54143 | 725mW | 1 | FET RF Small Signal | 16.6dB | 0.5dB | 120mA | 1V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 3V | 5V | HIGH ELECTRON MOBILITY | 20.4dBm | 60mA | 0.12A | pHEMT FET | ||||||||||||||||||||||||||||||||||||||||||||||
| BLF2045,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2GHz | 2015 | /files/ampleonusainc-blf2045112-datasheets-7088.pdf | SOT467C | 10dB | 30W | 4.5A | 180mA | LDMOS | 26V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATF-34143-TR1G | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 160°C | -65°C | 2GHz | DEPLETION MODE | RoHS Compliant | 2005 | 5.5V | 145mA | SC-82A, SOT-343 | Lead Free | 4 | 6 Weeks | No SVHC | 4 | EAR99 | Tin | No | e3 | 725mW | DUAL | GULL WING | 260 | ATF-34143 | 725mW | 1 | FET RF Small Signals | 17.5dB | 0.5dB | 65mA | -5V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 5.5V | HIGH ELECTRON MOBILITY | 20dBm | 60mA | pHEMT FET | 4V | |||||||||||||||||||||||||||||||||||||||||||||||
| BF1212R,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 6V | 400MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/nxpusainc-bf1212wr115-datasheets-6418.pdf | SOT-143R | 4 | EAR99 | LOW NOISE | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF1212 | 4 | 150°C | 40 | 1 | FET General Purpose Powers | 30dB | Not Qualified | R-PDSO-G4 | 0.9dB | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | AMPLIFIER | 0.18W | 6V | METAL-OXIDE SEMICONDUCTOR | 30mA | 12mA | 0.03A | 0.03 pF | N-Channel Dual Gate | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G27S-45,135 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.7GHz | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf6g2745112-datasheets-6367.pdf | SOT-608B | BLF6G27 | 18dB | CDFM2 | 7W | 20A | 350mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF862,235 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 20V | ROHS3 Compliant | 1999 | /files/nxpusainc-bf862215-datasheets-7024.pdf | TO-236-3, SC-59, SOT-23-3 | 8 Weeks | BF862 | 3 | 2013-06-14 00:00:00 | 25mA | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA0912-250,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 75V | 960MHz~1.22GHz | Non-RoHS Compliant | 2010 | /files/ampleonusainc-bla0912250112-datasheets-7107.pdf | SOT-502A | 13dB | LDMOST | 250W | LDMOS | 36V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G20LS-110,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.93GHz~1.99GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | /files/ampleonusainc-blf6g20ls110112-datasheets-7115.pdf | SOT-502B | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF6G20 | NOT SPECIFIED | 1 | 19dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 25W | 29A | 900mA | 29A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1211,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 6V | 400MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/nxpusainc-bf1211215-datasheets-6716.pdf | TO-253-4, TO-253AA | 4 | EAR99 | LOW NOISE | unknown | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF1211 | 4 | 150°C | 40 | 2 | FET General Purpose Power | 29dB | Not Qualified | R-PDSO-G4 | 0.9dB | SILICON | COMPLEX | SOURCE | AMPLIFIER | 0.18W | 6V | METAL-OXIDE SEMICONDUCTOR | 30mA | 15mA | 0.03A | 0.03 pF | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BF1108R,215 | NXP USA Inc. | $1.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 3V | DEPLETION MODE | ROHS3 Compliant | 1995 | https://pdf.utmel.com/r/datasheets/nxpusainc-bf1108r215-datasheets-7123.pdf | SOT-143R | 4 | 13 Weeks | EAR99 | 8541.21.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | BF1108 | 4 | 150°C | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | GATE | SWITCHING | 3V | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY B | 10mA | 0.01A | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATF-551M4-TR1 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | 2GHz | DEPLETION MODE | RoHS Compliant | 2001 | 5V | 100mA | 0505 (1412 Metric) | Contains Lead | 4 | 4 | EAR99 | No | e4 | Gold (Au) | 1412 | 0505 | 270mW | BOTTOM | 260 | ATF-551M4 | 270mW | 1 | FET RF Small Signal | 17.5dB | 0.5dB | 100mA | 1V | SINGLE | AMPLIFIER | N-CHANNEL | 5V | 5V | HIGH ELECTRON MOBILITY | 14.6dBm | 10mA | 0.1A | pHEMT FET | 2.7V | |||||||||||||||||||||||||||||||||||||||||||||||
| NE25139-T1-U73 | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 13V | 900MHz | DUAL GATE, DEPLETION MODE | Non-RoHS Compliant | 40mA | TO-253-4, TO-253AA | 4 | EAR99 | LOW NOISE | 8541.21.00.75 | YES | GULL WING | NE251 | 125°C | 1 | 20dB | Not Qualified | R-PDSO-G4 | 1.1dB | GALLIUM ARSENIDE | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 13V | METAL SEMICONDUCTOR | 10mA | 0.035A | 0.03 pF | MESFET Dual Gate | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5486 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Through Hole | 150°C | -65°C | 400MHz | DEPLETION MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-2n5486-datasheets-7134.pdf | 25V | 10mA | TO-226-3, TO-92-3 (TO-226AA) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 3 | 201mg | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | 350mW | BOTTOM | 240 | 2N5486 | 3 | Single | 30 | 350mW | 1 | Other Transistors | 5pF | 4 dB | 15V | 20mA | 25V | AMPLIFIER | 25V | JUNCTION | -25V | 30mA | 1 pF | 10dB | N-Channel JFET |
