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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Height | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Output | Current Rating (Amps) | JEDEC-95 Code | Min Breakdown Voltage | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Power Dissipation Ambient-Max | Transistor Type | Nominal Vgs | Voltage - Test |
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| MRF5S9100NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 68V | 880MHz | ROHS3 Compliant | 2005 | /files/nxpusainc-mrf5s9100nbr1-datasheets-7280.pdf | TO-270AB | MRF5S9100 | 19.5dB | 20W | 950mA | LDMOS | 26V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8S21140HR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.14GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | SOT-957A | 2 | 5A991 | 8541.29.00.75 | YES | DUAL | FLAT | 260 | MRF8S21140 | 225°C | 40 | 1 | 17.9dB | Not Qualified | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 34W | 970mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||
| BLA1011S-200,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 75V | 1.03GHz~1.09GHz | Non-RoHS Compliant | 2009 | /files/ampleonusainc-bla1011200112-datasheets-7235.pdf | SOT-502B | BLA1011 | 13dB | SOT502B | 200W | 150mA | LDMOS | 36V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G24-180PN,112 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 2GHz~2.2GHz | ROHS3 Compliant | 2011 | SOT539A | BLF6G24 | 17.5dB | 50W | LDMOS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ON5250/A,135 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | TO-261-4, TO-261AA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ON5453,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF5S19060NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 1.99GHz | ROHS3 Compliant | 2005 | /files/nxpusainc-mrf5s19060nr1-datasheets-7295.pdf | TO-270AB | EAR99 | not_compliant | e3 | Matte Tin (Sn) | MRF5S19060 | 14dB | 12W | 750mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF242,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 175MHz | Non-RoHS Compliant | 1997 | /files/ampleonusainc-blf242112-datasheets-7237.pdf | SOT-123A | 16dB | CRFM4 | 5W | 1A | 10mA | N-Channel | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ON5447,518 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-300,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 65V | 1.03GHz~1.09GHz | Non-RoHS Compliant | 2008 | /files/ampleonusainc-bla1011300112-datasheets-7240.pdf | SOT-957A | BLA1011 | 16.5dB | LDMOST | 300W | 15A | 150mA | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8P23080HSR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.3GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nxpusainc-mrf8p23080hsr3-datasheets-7300.pdf | NI-780S-4 | 4 | EAR99 | 8541.29.00.75 | YES | FLAT | 260 | MRF8P23080 | 225°C | 40 | 2 | FET General Purpose Power | 14.6dB | Not Qualified | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 16W | 280mA | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||||||||||||||
| BF862,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 20V | DEPLETION MODE | ROHS3 Compliant | 1999 | /files/nxpusainc-bf862215-datasheets-7024.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | EAR99 | 8541.21.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | BF862 | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | AMPLIFIER | 0.225W | 20V | JUNCTION | 25mA | TO-236AB | 0.04A | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||
| ON5449,518 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | 2008 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF546,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 500MHz | Non-RoHS Compliant | 1997 | /files/ampleonusainc-blf546112-datasheets-7251.pdf | SOT-268A | 13dB | CDFM4 | 80W | 9A | 80mA | 2 N-Channel (Dual) Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATF-55143-TR1G | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2005 | 5V | 100mA | SC-82A, SOT-343 | 1.2mm | Lead Free | 4 | 6 Weeks | No SVHC | 4 | EAR99 | Tin | No | e3 | 270mW | DUAL | GULL WING | 260 | ATF-55143 | 270mW | 1 | FET RF Small Signal | 17.7dB | 0.6dB | 100mA | 1V | 2.7V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 2.7V | 5V | HIGH ELECTRON MOBILITY | 370mV | 14.4dBm | 10mA | 0.1A | E-pHEMT | 370 mV | |||||||||||||||||||||||||||
| NE34018-T1-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | 4V | 2GHz | RoHS Compliant | SC-82A, SOT-343 | 4 | NE340 | 150mW | 16dB | 0.6dB | 120mA | 3V | 12dBm | 5mA | 4V | HFET | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ON5450,518 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE25139-T1 | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 13V | 900MHz | DUAL GATE, DEPLETION MODE | Non-RoHS Compliant | 40mA | TO-253-4, TO-253AA | 4 | 4 | LOW NOISE | GULL WING | NE251 | 125°C | 1 | 20dB | Not Qualified | 1.1dB | 40A | GALLIUM ARSENIDE | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 13V | METAL SEMICONDUCTOR | 10mA | 0.03 pF | MESFET Dual Gate | 5V | |||||||||||||||||||||||||||||||||||||||||||||
| NE3509M04-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | 4V | 2GHz | RoHS Compliant | /files/cel-ne3509m04a-datasheets-6997.pdf | SOT-343F | Lead Free | 4 | No | NE3509 | 125mW | 17.5dB | M04 | 0.4dB | 60mA | 3V | 11dBm | 60mA | 4V | 10mA | 2V | HFET | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BLF1043,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 960MHz | 2013 | /files/ampleonusainc-blf1043112-datasheets-7267.pdf | SOT-538A | 18.5dB | 2-CSMD | 10W | 2.2A | 85mA | LDMOS | 26V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8P23080HR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.3GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nxpusainc-mrf8p23080hsr3-datasheets-7300.pdf | NI780-4 | 4 | EAR99 | 8541.29.00.75 | YES | FLAT | 260 | MRF8P23080 | 225°C | 40 | 2 | 14.6dB | Not Qualified | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 16W | 280mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||
| BF1107,235 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 3V | ROHS3 Compliant | 2006 | /files/nxpusainc-bf1107235-datasheets-7271.pdf | TO-236-3, SC-59, SOT-23-3 | 8 Weeks | BF1107 | 3 | 2013-06-14 00:00:00 | 10mA | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPF-3143 | RFMD |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 7V | 1.9GHz | DEPLETION MODE | Non-RoHS Compliant | 180mA | SC-82A, SOT-343 | 4 | EAR99 | e0 | TIN LEAD | YES | DUAL | GULL WING | 235 | NOT SPECIFIED | 1 | 19.9dB | Not Qualified | R-PDSO-G4 | 0.9dB | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 7V | JUNCTION | 17.7dBm | 40mA | 0.12A | pHEMT FET | 5V | ||||||||||||||||||||||||||||||||||||||||||
| NE3508M04-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | 4V | 2GHz | RoHS Compliant | /files/cel-ne3508m04a-datasheets-6991.pdf | SOT-343F | Lead Free | 4 | No | 125mW | 14dB | 0.45dB | 120mA | 3V | 18dBm | 10mA | 2V | HFET | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| ON5451,518 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF878,112 | Ampleon USA Inc. | $56.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 89V | 860MHz | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blf878112-datasheets-7203.pdf | SOT-979A | 26 Weeks | 21dB | CDFM2 | 300W | 1.4A | LDMOS (Dual), Common Source | 40V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATF-541M4-BLK | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2006 | 3V | 120mA | 0505 (1412 Metric) | 4 | 7 Weeks | No SVHC | 4 | EAR99 | No | 60mA | e4 | GOLD | 360mW | BOTTOM | 260 | ATF-541M4 | 360mW | 1 | FET RF Small Signal | 17.5dB | 0.5dB | 120mA | 1V | SINGLE | AMPLIFIER | N-CHANNEL | 3V | 5V | HIGH ELECTRON MOBILITY | 21.4dBm | 0.12A | E-pHEMT | |||||||||||||||||||||||||||||||||||
| SPF-2086TK | RFMD |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 7V | 4GHz | DEPLETION MODE | Non-RoHS Compliant | 2003 | /files/rfmd-spf2086tk-datasheets-7229.pdf | 140mA | SOT-86 | 4 | LOW NOISE | unknown | 8541.21.00.75 | YES | RADIAL | GULL WING | 225 | 85°C | NOT SPECIFIED | 1 | FET RF Small Signal | 18.7dB | Not Qualified | O-CRDB-G4 | 0.5dB | GALLIUM ARSENIDE | SINGLE | SWITCHING | N-CHANNEL | 7V | HIGH ELECTRON MOBILITY | 20dBm | 40mA | 0.14A | 0.6W | pHEMT FET | 5V | ||||||||||||||||||||||||||||||||||||||
| BF1100R,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 14V | 800MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/nxpusainc-bf1100r215-datasheets-6988.pdf | SOT-143R | 4 | EAR99 | LOW NOISE | 8541.21.00.75 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | BF1100 | 4 | 150°C | 40 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 2013-06-14 00:00:00 | 2dB | SILICON | COMPLEX | SOURCE | AMPLIFIER | 14V | METAL-OXIDE SEMICONDUCTOR | 30mA | 10mA | 0.03A | 0.035 pF | N-Channel Dual Gate | 9V | ||||||||||||||||||||||||||||||||||||
| BLF6G38-25,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 3.4GHz~3.6GHz | Non-RoHS Compliant | 2013 | /files/ampleonusainc-blf6g3825112-datasheets-7171.pdf | SOT-608A | BLF6G38 | 15dB | CDFM2 | 4.5W | 8.2A | 225mA | LDMOS | 28V |
