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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Power Gain | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | JEDEC-95 Code | Min Breakdown Voltage | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Power Dissipation Ambient-Max | Transistor Type | Voltage - Test |
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| CGH60008D-GP4 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 84V | 6GHz | RoHS Compliant | 2012 | Die | 8 Weeks | 15dB | 8W | 100mA | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CGH40035F | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 84V | 0Hz~4GHz | RoHS Compliant | 2015 | 10.5A | 440193 | 8 Weeks | CGH40* | 14dB | 440193 | 45W | 10.5A | 500mA | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF300AN | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 27MHz~250MHz | RoHS Compliant | /files/nxpusainc-mrf300an50mhz-datasheets-0035.pdf | TO-247-3 | 12 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 18.7dB | 300W | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK209-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -55°C | 1kHz | RoHS Compliant | 2009 | /files/toshiba-2sk209yte85lf-datasheets-8934.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.5mm | 52 Weeks | 3 | No | 150mW | Single | 1dB | 3mA | -30V | 500μA | N-Channel JFET | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CG2H40010F | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | Not Applicable | 120V | 8GHz | RoHS Compliant | 2017 | 440166 | 8 Weeks | 16.5dB | 440166 | 100mA | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CE3512K2 | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Strip | 1 (Unlimited) | 4V | 12GHz | DEPLETION MODE | ROHS3 Compliant | 15mA | 4-Micro-X | 4 | 7 Weeks | yes | EAR99 | 8541.21.00.75 | YES | QUAD | FLAT | 1 | 13.7dB | S-PQMW-F4 | 0.5dB | SILICON | SINGLE | AMPLIFIER | N-CHANNEL | 3V | JUNCTION | 125mW | 10mA | 0.015A | pHEMT FET | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CGH27015F | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 84V | 3GHz | RoHS Compliant | 2015 | 440166 | 8 Weeks | 15dB | 440166 | 15W | 100mA | HEMT | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC2425M10LS500PZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 65V | 2.4GHz~2.5GHz | ROHS3 Compliant | /files/ampleonusainc-blc2425m10ls500pz-datasheets-8459.pdf | SOT1250-1 | 13 Weeks | 14.5dB | 500W | 4.2μA | 20mA | LDMOS (Dual), Common Source | 32V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFE6VP6300HR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 130V | 230MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | NI780-4 | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | YES | FLAT | 260 | MRFE6VP6300 | 225°C | 40 | 2 | FET General Purpose Power | 26.5dB | Not Qualified | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 130V | METAL-OXIDE SEMICONDUCTOR | 300W | 100mA | LDMOS (Dual) | 50V | ||||||||||||||||||||||||||||||||||||||||||||||
| CGH40006S | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tape & Reel (TR) | 3 (168 Hours) | 84V | 0Hz~6GHz | RoHS Compliant | 2015 | /files/cree-cgh40006s-datasheets-8927.pdf | 6-VDFN Exposed Pad | 8 Weeks | CGH40* | 12dB | 6-QFN-EP (3x3) | 8W | 100mA | HEMT | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF881,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 104V | 860MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf881s112-datasheets-8028.pdf | SOT467C | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | 21dB | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 104V | METAL-OXIDE SEMICONDUCTOR | 140W | 500mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||
| CGHV1J070D-GP4 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 100V | 18GHz | RoHS Compliant | Die | 8 Weeks | 17dB | 70W | 360mA | HEMT | 40V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CGH55030F2 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 84V | 4.5GHz~6GHz | RoHS Compliant | 2012 | 440166 | 8 Weeks | 11dB | 30W | 250mA | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT27S006NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.17GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | PLD-1.5W | 2 | 10 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | 150°C | -40°C | 40 | 1 | FET General Purpose Power | 22dB | R-PDFM-F2 | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 28.8dBm | 70mA | 1.5W | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||
| BLP10H605AZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 104V | 860MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blp10h605az-datasheets-8291.pdf | 12-VDFN Exposed Pad | 12 | 13 Weeks | yes | EAR99 | unknown | IEC-60134 | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | 22.4dB | R-PDSO-N12 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 104V | METAL-OXIDE SEMICONDUCTOR | 5W | MO-229 | 30mA | LDMOS (Dual), Common Source | 50V | |||||||||||||||||||||||||||||||||||||||||||||||
| BLF578,112 | Ampleon USA Inc. | $228.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 110V | 225MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blf578112-datasheets-8297.pdf | SOT539A | 4 | 13 Weeks | EAR99 | IEC-60134 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 24dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 110V | METAL-OXIDE SEMICONDUCTOR | 1200W | 88A | 40mA | 88A | LDMOS (Dual), Common Source | 50V | |||||||||||||||||||||||||||||||||||||||||||||||
| BLF888B,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 104V | 860MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf888b112-datasheets-8311.pdf | SOT539A | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF888 | NOT SPECIFIED | 2 | 21dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 104V | METAL-OXIDE SEMICONDUCTOR | 250W | 1.3A | LDMOS (Dual), Common Source | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PD55003-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd55003se-datasheets-9103.pdf | 40V | 2.5A | PowerSO-10 Exposed Bottom Pad | 7.5mm | 3.5mm | 9.4mm | Lead Free | 2 | 25 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | 31.7W | DUAL | GULL WING | 250 | PD55003 | 10 | Single | 30 | 31.7W | 1 | FET General Purpose Power | R-PDSO-G2 | 2.5A | 20V | 17dB | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 3W | 50mA | 40V | LDMOS | 12.5V | |||||||||||||||||||||||||||||
| MRF6V2150NBR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 110V | 220MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/nxpusainc-mrf6v2150nr1-datasheets-9894.pdf | TO-272BB | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | MRF6V2150 | 225°C | 40 | 1 | FET General Purpose Power | 25dB | Not Qualified | R-PDFM-F4 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 110V | METAL-OXIDE SEMICONDUCTOR | 150W | 450mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||
| CGHV27030S | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tape & Reel (TR) | 3 (168 Hours) | 125V | 6GHz | RoHS Compliant | 2009 | 12-VFDFN Exposed Pad | 8 Weeks | 20.4dB | 12-DFN (4x3) | 30W | 130mA | HEMT | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6V2010NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 110V | 220MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/nxpusainc-mrf6v2010nbr1-datasheets-1565.pdf | TO-270AA | 2 | 10 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | MRF6V2010 | 225°C | 40 | 1 | FET General Purpose Power | 23.9dB | Not Qualified | R-PDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 110V | METAL-OXIDE SEMICONDUCTOR | 10W | 30mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||
| MWT-173 | Microwave Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 100MHz~12GHz | DEPLETION MODE | RoHS Compliant | 1999 | 240mA | Nonstandard SMD | 4 | 6 Weeks | yes | unknown | 8541.21.00.75 | e4 | Gold (Au) | YES | UNSPECIFIED | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Other Transistors | 10dB | Not Qualified | X-CXMW-F4 | 2dB | GALLIUM ARSENIDE | SINGLE | AMPLIFIER | N-CHANNEL | METAL SEMICONDUCTOR | 300mW | 0.06 pF | MESFET | 5V | ||||||||||||||||||||||||||||||||||||||||||||
| SD2941-10W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 200°C | -65°C | 130V | 175MHz | ROHS3 Compliant | /files/stmicroelectronics-sd294110-datasheets-2610.pdf | 20A | M174 | Lead Free | 32 Weeks | 4 | EAR99 | No | 389W | SD2941 | 1 | FET General Purpose Powers | 15.8dB | 20A | 20V | Single | METAL-OXIDE SEMICONDUCTOR | 175W | 250mA | N-Channel | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CGH55015F2 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 84V | 5.65GHz | RoHS Compliant | 2015 | 440166 | 8 Weeks | 12dB | 12.5W | 200mA | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CGH40006P | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tube | 1 (Unlimited) | 84V | 0Hz~6GHz | RoHS Compliant | 2015 | 3.5A | 440109 | 8 Weeks | CGH40* | 13dB | 8W | 100mA | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 150-102N02A-00 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DE | Tube | 1 (Unlimited) | 1000V | ROHS3 Compliant | /files/ixysrf-150102n02a00-datasheets-8377.pdf | 6-SMD, Flat Lead Exposed Pad | 10 Weeks | 200W | 2A | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CGHV60040D-GP4 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 150V | 6GHz | RoHS Compliant | 2014 | Die | 8 Weeks | 17dB | 40W | 65mA | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD84002 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 3 (168 Hours) | 150°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stevaltdr034v1-datasheets-4816.pdf | 2A | TO-243AA | Lead Free | 3 | 11 Weeks | 130.492855mg | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | not_compliant | e3 | Matte Tin (Sn) | 6W | FLAT | 260 | PD84002 | 3 | Single | 30 | 1 | FET General Purpose Power | 15dB | Not Qualified | 2A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 2W | 100mA | 2A | LDMOS | 7.5V | |||||||||||||||||||||||||||||||||||
| CG2H80030D-GP4 | Cree/Wolfspeed | $83.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 84V | 8GHz | RoHS Compliant | Die | 8 Weeks | 16.5dB | 30W | 200mA | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD55008-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd55008se-datasheets-8042.pdf | 40V | 4A | PowerSO-10 Exposed Bottom Pad | 7.5mm | 3.5mm | 9.4mm | Lead Free | 2 | 25 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | 52.8W | DUAL | GULL WING | 250 | PD55008 | 10 | Single | 30 | 52.8W | 1 | FET General Purpose Power | R-PDSO-G2 | 58pF | 4A | 20V | 17dB | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 8W | 40V | 150mA | 4A | 40V | LDMOS | 12.5V |
