Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | JEDEC-95 Code | Min Breakdown Voltage | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
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CGHV40100P | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 125V | 0Hz~4GHz | RoHS Compliant | 8.7A | 440206 | 8 Weeks | 11dB | 116W | 600mA | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT05MS006NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 30V | 520MHz | ROHS3 Compliant | 2009 | PLD-1.5W | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | 260 | 40 | 18.3dB | 6W | 100mA | LDMOS | 7.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||
CG2H80060D-GP4 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 2017 | Die | 8 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CLF1G0060S-30U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 150V | 3GHz~3.5GHz | DEPLETION MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ampleonusainc-clf1g006030u-datasheets-8542.pdf | SOT-1227B | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | CLF1G0060 | 1 | 13dB | R-CDFP-F2 | GALLIUM NITRIDE | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 150V | HIGH ELECTRON MOBILITY | 30W | 70mA | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||
CGH60060D-GP4 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 84V | 6GHz | RoHS Compliant | Die | 13dB | 60W | 400mA | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLF8G22LS-270GVJ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf8g22ls270gvj-datasheets-8949.pdf | SOT-1244C | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | BLF8G22 | NOT SPECIFIED | 1 | 17.3dB | R-CDSO-G6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 80W | 2.4A | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||
BLC9G22XS-400AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 2.11GHz~2.2GHz | ROHS3 Compliant | 2010 | /files/ampleonusainc-blc9g22xs400avtz-datasheets-8953.pdf | SOT-1258-4 | 13 Weeks | 15.3dB | 580W | 810mA | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLP8G27-5Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 3 (168 Hours) | 65V | 2.14GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blp8g275z-datasheets-8681.pdf | 16-VDFN Exposed Pad | 13 Weeks | 18dB | 16-HVSON (6x4) | 750mW | 55mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF101BN | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 133V | 1.8MHz~250MHz | ROHS3 Compliant | /files/nxpusainc-mrf101an13mhz-datasheets-6422.pdf | TO-220-3 | 12 Weeks | 21.1dB | 115W | 10μA | 100mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF1K50HR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 50V | 1.8MHz~500MHz | Non-RoHS Compliant | 2009 | /files/nxpusainc-afic10275nr1-datasheets-8471.pdf | SOT-979A | 10 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 22.5dB | 1500W | LDMOS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
PD57060-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd57060tre-datasheets-9123.pdf | 65V | 7A | PowerSO-10 Exposed Bottom Pad | Lead Free | 2 | 25 Weeks | 3 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - annealed | 79W | DUAL | GULL WING | 250 | PD57060 | 10 | Single | NOT SPECIFIED | 79W | 1 | FET General Purpose Power | 14.3dB | Not Qualified | R-PDSO-G2 | 7A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 60W | 65V | 100mA | 7A | 65V | LDMOS | 28V | |||||||||||||||||||||
AFT09MS007NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 30V | 870MHz | ROHS3 Compliant | 2006 | PLD-1.5W | 10 Weeks | EAR99 | 8541.29.00.40 | e3 | Matte Tin (Sn) | YES | 260 | 150°C | 40 | FET General Purpose Power | 15.2dB | Single | N-CHANNEL | 182W | METAL-OXIDE SEMICONDUCTOR | 7.3W | 100mA | LDMOS | 7.5V | ||||||||||||||||||||||||||||||||||||||||||||
MRF1513NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 40V | 520MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/nxpusainc-mrf1513nt1-datasheets-8613.pdf | PLD-1.5 | 4 | 10 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | QUAD | NO LEAD | 260 | MRF1513 | 150°C | 40 | 1 | FET General Purpose Power | 15dB | Not Qualified | R-PQSO-N4 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 31.2W | 40V | METAL-OXIDE SEMICONDUCTOR | 3W | 2A | 50mA | 2A | LDMOS | 12.5V | ||||||||||||||||||||||||||||
BLF578XR,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 110V | 225MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf578xr112-datasheets-8740.pdf | SOT539A | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 23.5dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 110V | METAL-OXIDE SEMICONDUCTOR | 1400W | 40mA | LDMOS (Dual), Common Source | 50V | |||||||||||||||||||||||||||||||||||||||
CGHV14500F | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 125V | 1.2GHz~1.4GHz | RoHS Compliant | 2015 | 36A | 440117 | 8 Weeks | 17dB | 440117 | 500W | 36A | 500mA | HEMT | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF101AN | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 133V | 1.8MHz~250MHz | ROHS3 Compliant | /files/nxpusainc-mrf101an13mhz-datasheets-6422.pdf | TO-220-3 | 12 Weeks | 21.1dB | 115W | 10μA | 100mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VRF3933 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 150°C | -65°C | 250V | 30MHz | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/microsemicorporation-vrf3933-datasheets-8769.pdf | 20A | M177 | Lead Free | 4 | 22 Weeks | YES | 648W | RADIAL | FLAT | 1 | 22dB | O-CRFM-F4 | 20A | 40V | SINGLE | SOURCE | AMPLIFIER | 260V | 250V | METAL-OXIDE SEMICONDUCTOR | 300W | 250mA | N-Channel | 100V | ||||||||||||||||||||||||||||||||||||
BLP15M7160PY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 860MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blp15m7160py-datasheets-8772.pdf | SOT-1223-1 | 4 | 13 Weeks | EAR99 | IEC-60134 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 20dB | R-PDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 160W | 100mA | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||
CGHV27015S | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tape & Reel (TR) | 3 (168 Hours) | 125V | 6GHz | RoHS Compliant | 2015 | 12-VFDFN Exposed Pad | 8 Weeks | 21dB | 12-DFN (4x3) | 15W | 60mA | HEMT | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF861B,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 25V | DEPLETION MODE | ROHS3 Compliant | 2001 | /files/nxpusainc-bf861a215-datasheets-6459.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | EAR99 | LOW NOISE | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | BF861 | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | AMPLIFIER | 0.25W | 25V | JUNCTION | 15mA | TO-236AB | 2.7 pF | N-Channel JFET | |||||||||||||||||||||||||||||||||
SD4933MR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 200°C | -65°C | 30MHz | ROHS3 Compliant | /files/stmicroelectronics-sd4933mr-datasheets-8796.pdf | 40A | M177 | 32 Weeks | 177 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 648W | SD4933 | 1 | 24dB | 40A | 20V | 200V | 300W | 250mA | N-Channel | 50V | ||||||||||||||||||||||||||||||||||||||||||||
MW6S004NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 68V | 1.96GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nxpusainc-mw6s004nt1-datasheets-8671.pdf | PLD-1.5 | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | QUAD | NO LEAD | 260 | MW6S004 | 150°C | 40 | 1 | FET General Purpose Power | 18dB | Not Qualified | R-PQSO-N4 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 68V | METAL-OXIDE SEMICONDUCTOR | 4W | 50mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||
CGHV40320D-GP4 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 150V | 4GHz | RoHS Compliant | Die | 8 Weeks | 19dB | 320W | 500mA | HEMT | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF1517NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 25V | 520MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/nxpusainc-mrf1517nt1-datasheets-8639.pdf | PLD-1.5 | 4 | 10 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | QUAD | NO LEAD | 260 | MRF1517 | 150°C | 40 | 1 | FET General Purpose Power | 14dB | Not Qualified | R-PQSO-N4 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 62.5W | 25V | METAL-OXIDE SEMICONDUCTOR | 8W | 4A | 150mA | 4A | LDMOS | 7.5V | ||||||||||||||||||||||||||||
CGH60120D-GP4 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 84V | 6GHz | RoHS Compliant | Die | 8 Weeks | 13dB | Die | 120W | 1A | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CGH55030F1 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 84V | 5.5GHz~5.8GHz | RoHS Compliant | 2015 | 440166 | 8 Weeks | 10dB | 440166 | 30W | 3A | 250mA | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
PD57060S-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd57060tre-datasheets-9123.pdf | 65V | 7A | PowerSO-10 Exposed Bottom Pad | Lead Free | 2 | 25 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | 79W | DUAL | FLAT | 250 | PD57060 | 10 | Single | 30 | 79W | 1 | FET General Purpose Power | 14.3dB | R-PDSO-F2 | 7A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 60W | 100mA | 7A | 65V | LDMOS | 28V | ||||||||||||||||||||||
CGHV40050F | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 150V | 0Hz~4GHz | RoHS Compliant | 2015 | 6.3A | 440193 | 8 Weeks | 12.5dB | 50W | 300mA | HEMT | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VP5600HR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 130V | 230MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | NI-1230-4H | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | YES | FLAT | 260 | MRFE6VP5600 | 225°C | 40 | 2 | FET General Purpose Power | 25dB | Not Qualified | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 1670W | 130V | METAL-OXIDE SEMICONDUCTOR | 600W | 100mA | LDMOS (Dual) | 50V | |||||||||||||||||||||||||||||||||||
CGH09120F | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 84V | 2.5GHz | RoHS Compliant | 2015 | 440095 | 8 Weeks | 21.5dB | 440095 | 120W | 1.2A | HEMT | 28V |
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