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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | Current - Test | Drain Current-Max (Abs) (ID) | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BLF647PS,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.3GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf647ps112-datasheets-9274.pdf | SOT-1121B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF647 | NOT SPECIFIED | 2 | 17.5dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 200W | 100mA | LDMOS (Dual), Common Source | 32V | |||||||||||||||||||||||||||||||||||||
| BF510,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 20V | 100MHz | DEPLETION MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-bf513215-datasheets-9184.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | EAR99 | LOW NOISE | 8541.21.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | BF510 | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | 1.5dB | SILICON | SINGLE | AMPLIFIER | 0.25W | 20V | JUNCTION | 30mA | 5mA | 0.03A | 0.4 pF | N-Channel JFET | 10V | ||||||||||||||||||||||||||||
| BLC9H10XS-600AZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 105V | 616MHz~960MHz | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ampleonusainc-blc9h10xs600az-datasheets-9277.pdf | SOT1250-1 | 13 Weeks | 17.7dB | 600W | 1.4μA | 600mA | LDMOS (Dual), Common Source | 48V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLM9D1822-30BZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 65V | 1.8GHz~2.2GHz | ROHS3 Compliant | /files/ampleonusainc-blm9d182230bz-datasheets-9267.pdf | 20-QFN Exposed Pad | 13 Weeks | 29.3dB | 45.9dBm | 1.4μA | 110mA | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STAC2942BW | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 200°C | -65°C | 175MHz | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stac2942b-datasheets-3134.pdf | 40A | STAC244F | Lead Free | 32 Weeks | 5 | EAR99 | No | 625W | STAC294 | 625W | 2 | FET General Purpose Powers | 21 dB | 40A | 20V | Single | 130V | METAL-OXIDE SEMICONDUCTOR | 450W | 250mA | 130V | N-Channel | 50V | ||||||||||||||||||||||||||||||||||||||
| BLC8G27LS-210PVZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 2.6GHz~2.7GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blc8g27ls210pvy-datasheets-0185.pdf | SOT-1251-3 | 13 Weeks | 17dB | 8-DFM | 65W | 1.73A | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC10G18XS-400AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 1.805GHz~1.88GHz | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ampleonusainc-blc10g18xs400avtz-datasheets-9215.pdf | SOT-1258-4 | 13 Weeks | 15.7dB | 400W | 2.8μA | 800mA | LDMOS (Dual), Common Source | 32V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD57018TR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 165°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd57018stre-datasheets-9597.pdf | 2.5A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 25 Weeks | 3 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | MATTE TIN | 31.7W | DUAL | GULL WING | 250 | PD57018 | 10 | Single | 30 | 31.7W | 1 | FET General Purpose Power | 16.5dB | Not Qualified | R-PDSO-G2 | 2.5A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 18W | 100mA | 760mOhm | 65V | LDMOS | 28V | |||||||||||||||||||||||
| MRF6S20010GNR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 68V | 2.17GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/nxpusainc-mrf6s20010gnr1-datasheets-9217.pdf | TO-270BA | 2 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | MRF6S20010 | 225°C | 40 | 1 | FET General Purpose Power | 15.5dB | Not Qualified | R-PDFM-G2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 68V | METAL-OXIDE SEMICONDUCTOR | 10W | 130mA | LDMOS | 28V | |||||||||||||||||||||||||||||||
| BLF182XRSU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 135V | 108MHz | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf182xru-datasheets-9060.pdf | SOT-1121B | 13 Weeks | 28dB | 250W | 100mA | LDMOS (Dual), Common Source | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC9H10XS-300PZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 108V | 600MHz~960MHz | /files/ampleonusainc-blc9h10xs300py-datasheets-0075.pdf | SOT1273-1 | 13 Weeks | 21dB | 300W | 1.4μA | 600mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF888EU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 104V | 600MHz~700MHz | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf888eu-datasheets-9108.pdf | SOT539A | 13 Weeks | 17dB | SOT539A | 750W | 600mA | LDMOS (Dual), Common Source | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD55003TR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd55003se-datasheets-9103.pdf | 2.5A | PowerSO-10 Exposed Bottom Pad | 2 | 25 Weeks | 4 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | 31.7W | DUAL | GULL WING | 250 | PD55003 | 10 | Single | 30 | 31.7W | 1 | FET General Purpose Power | 17dB | R-PDSO-G2 | 2.5A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 3W | 50mA | 40V | LDMOS | 12.5V | |||||||||||||||||||||||||
| BLF2425M7LS250P,11 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.45GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf2425m7l250p112-datasheets-8984.pdf | SOT539B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF2425 | NOT SPECIFIED | 2 | 15dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 250W | 20mA | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||
| MW6S010NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 68V | 960MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nxpusainc-mw6s010gnr1-datasheets-8724.pdf | TO-270AA | 2 | 10 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | MW6S010 | 225°C | 40 | 1 | FET General Purpose Power | 18dB | Not Qualified | R-PDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 61.4W | 68V | METAL-OXIDE SEMICONDUCTOR | 10W | 125mA | LDMOS | 28V | |||||||||||||||||||||||||||||
| CLF1G0035S-100,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 150V | 3GHz | DEPLETION MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ampleonusainc-clf1g0035s100112-datasheets-9115.pdf | SOT467B | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | CLF1G0035 | NOT SPECIFIED | 1 | 12dB | R-CDFP-F2 | GALLIUM NITRIDE | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 150V | HIGH ELECTRON MOBILITY | 100W | 330mA | HEMT | 50V | |||||||||||||||||||||||||||||||||||
| BLL6H1214-500,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 100V | 1.2GHz~1.4GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-bll6h1214500112-datasheets-9121.pdf | SOT539A | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLL6H1214 | NOT SPECIFIED | 2 | 17dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 500W | 150mA | 45A | LDMOS (Dual), Common Source | 50V | ||||||||||||||||||||||||||||||||||||
| BF1105R,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 800MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-bf1105215-datasheets-6251.pdf | SOT-143R | 4 | 13 Weeks | EAR99 | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF1105 | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | 20dB | Not Qualified | R-PDSO-G4 | 1.7dB | SILICON | SINGLE | SOURCE | AMPLIFIER | 7V | METAL-OXIDE SEMICONDUCTOR | 30mA | 0.03A | 0.04 pF | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||
| BLF6G13L-250P,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 100V | 1.3GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf6g13ls250pgj-datasheets-0528.pdf | SOT-1121A | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF6G13 | NOT SPECIFIED | 2 | 17dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | N-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 250W | 100mA | 42A | LDMOS | 50V | |||||||||||||||||||||||||||||||||||
| PD55008TR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd55008se-datasheets-8042.pdf | 4A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 25 Weeks | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | 52.8W | DUAL | GULL WING | 250 | PD55008 | 10 | Single | 30 | 52.8W | 1 | FET General Purpose Power | 17dB | R-PDSO-G2 | 4A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 8W | 150mA | 4A | 40V | LDMOS | 12.5V | ||||||||||||||||||||||||
| BLF888BS,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 104V | 470MHz~860MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf888b112-datasheets-8311.pdf | SOT539B | 4 | 13 Weeks | EAR99 | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF888 | NOT SPECIFIED | 2 | 21dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 104V | METAL-OXIDE SEMICONDUCTOR | 250W | 2.8μA | LDMOS (Dual), Common Source | 50V | ||||||||||||||||||||||||||||||||||||||
| MRF1511NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 40V | 175MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nxpusainc-mrf1511nt1-datasheets-8786.pdf | PLD-1.5 | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | QUAD | NO LEAD | 260 | MRF1511 | 150°C | 40 | 1 | FET General Purpose Power | 13dB | Not Qualified | R-PQSO-N4 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 62.5W | 40V | METAL-OXIDE SEMICONDUCTOR | 8W | 4A | 150mA | 4A | LDMOS | 7.5V | ||||||||||||||||||||||||||||
| AFT09MS031GNR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 40V | 870MHz | ROHS3 Compliant | 2006 | TO-270BA | 10 Weeks | EAR99 | 8541.29.00.40 | e3 | Matte Tin (Sn) | YES | 260 | AFT09MS031 | 150°C | 40 | FET General Purpose Power | 17.2dB | Single | N-CHANNEL | 317W | METAL-OXIDE SEMICONDUCTOR | 31W | 500mA | LDMOS | 13.6V | ||||||||||||||||||||||||||||||||||||||||||
| PD57018S-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd57018stre-datasheets-9597.pdf | 65V | 2.5A | PowerSO-10 Exposed Bottom Pad | Lead Free | 2 | 25 Weeks | 3 | EAR99 | HIGH RELIABILITY | No | e3 | MATTE TIN | 31.7W | DUAL | FLAT | 250 | PD57018 | 10 | Single | 30 | 31.7W | 1 | FET General Purpose Power | 16.5dB | R-PDSO-F2 | 2.5A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 18W | 100mA | 760mOhm | 65V | LDMOS | 28V | |||||||||||||||||||||||
| PD84006L-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 3 (168 Hours) | 150°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd84006le-datasheets-9208.pdf | 5A | 8-PowerVDFN | 8 | 11 Weeks | 14 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | MATTE TIN | 31W | DUAL | 225 | PD84006 | 8 | Single | 31W | 1 | FET General Purpose Power | 15dB | S-PDSO-N8 | 5A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 6W | 2W | 150mA | 5A | 25V | LDMOS | 7.5V | |||||||||||||||||||||||||
| BLM7G1822S-80PBY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.17GHz | 2011 | /files/ampleonusainc-blm7g1822s80pbgy-datasheets-7827.pdf | SOT-1211-2 | 13 Weeks | 28dB | 8W | 80mA | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC9G20LS-470AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 1.81GHz~1.88GHz | ROHS3 Compliant | 2010 | /files/ampleonusainc-blc9g20ls470avtz-datasheets-9084.pdf | SOT-1258-3 | 13 Weeks | 15.7dB | 470W | 400mA | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF2324M8LS200PU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf2324m8ls200pu-datasheets-9018.pdf | SOT539B | 13 Weeks | 17.2dB | 60W | 1.74A | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA6G1011L-200RG,1 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.03GHz~1.09GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-bla6g1011200r112-datasheets-0884.pdf | SOT-502D | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLA6G1011 | NOT SPECIFIED | 1 | 20dB | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 200W | 49A | 100mA | 49A | LDMOS | 28V | |||||||||||||||||||||||||||||||||
| BLM8G0710S-45ABY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 957.5MHz | 2011 | /files/ampleonusainc-blm8g0710s45abgy-datasheets-8084.pdf | SOT-1211-2 | 13 Weeks | 35dB | 3W | 30mA | LDMOS (Dual) | 28V |
