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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Breakdown Voltage | Power - Output | Highest Frequency Band | Current Rating (Amps) | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Power Gain-Min (Gp) | Power Dissipation Ambient-Max | Transistor Type | Nominal Vgs | Voltage - Test |
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| ATF-33143-BLKG | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Strip | 1 (Unlimited) | SMD/SMT | 160°C | -65°C | 2GHz | DEPLETION MODE | RoHS Compliant | 2009 | 5.5V | 305mA | SC-82A, SOT-343 | Lead Free | 4 | 6 Weeks | No SVHC | 4 | EAR99 | Tin | No | e3 | 600mW | DUAL | GULL WING | 260 | 600mW | 1 | FET RF Small Signals | 15dB | 0.5dB | 305mA | -5V | 5.5V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 5.5V | HIGH ELECTRON MOBILITY | 22dBm | 80mA | pHEMT FET | -5 V | 4V | ||||||||||||||||||||||||||||||||||||||
| BLF6G10S-45,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 65V | 922.5MHz~957.5MHz | Non-RoHS Compliant | 2013 | /files/ampleonusainc-blf6g10s45112-datasheets-3035.pdf | SOT-608B | BLF6G10 | 23dB | CDFM2 | 1W | 13A | 350mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD55008TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd55008tr-datasheets-3008.pdf | 4A | PowerSO-10 Exposed Bottom Pad | 2 | 3 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - annealed | YES | 52.8W | DUAL | GULL WING | 250 | PD55008 | 10 | Single | 30 | 52.8W | 1 | FET General Purpose Power | 17dB | Not Qualified | R-PDSO-G2 | 4A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 8W | 150mA | 4A | 40V | LDMOS | 12.5V | ||||||||||||||||||||||||||||||||||||||
| PD57002S-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 960MHz | ENHANCEMENT MODE | ROHS3 Compliant | 250mA | PowerSO-10 Exposed Bottom Pad | 2 | 4 | EAR99 | HIGH RELIABILITY | 4.75W | DUAL | FLAT | NOT SPECIFIED | PD57002 | 10 | Single | NOT SPECIFIED | 4.75W | 1 | FET General Purpose Power | 15dB | Not Qualified | R-PDSO-F2 | 250mA | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 2W | 10mA | 0.25A | 65V | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||
| BG3130E6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | DUAL GATE, DEPLETION MODE | RoHS Compliant | 2005 | /files/infineontechnologies-bg3130re6327btsa1-datasheets-2963.pdf | 25mA | 6-VSSOP, SC-88, SOT-363 | 6 | LOW NOISE | YES | GULL WING | BG3130 | 2 | 24dB | R-PDSO-G6 | 1.3dB | SILICON | AMPLIFIER | 12V | METAL-OXIDE SEMICONDUCTOR | 14mA | 0.025A | 2 N-Channel (Dual) | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| J310RLRP | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | 100MHz | DEPLETION MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-j310-datasheets-7181.pdf | 25V | 60mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Contains Lead | 3 | 3 | not_compliant | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | THROUGH-HOLE | 240 | J310 | 3 | Single | 30 | 1 | Other Transistors | 16dB | Not Qualified | 70mA | 25V | AMPLIFIER | 25V | JUNCTION | 10mA | 2.5 pF | 25V | N-Channel JFET | 10V | ||||||||||||||||||||||||||||||||||||||||||
| PTFA260451E V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tray | 3 (168 Hours) | 65V | 2.68GHz | 2008 | /files/infineontechnologies-ptfa260451ev1-datasheets-2977.pdf | 2-Flatpack, Fin Leads | 15dB | H-30265-2 | 45W | 10μA | 500mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF256AG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | 800MHz | RoHS Compliant | 2010 | /files/onsemiconductor-bf256ag-datasheets-2981.pdf | 30V | 7mA | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 3 | OBSOLETE (Last Updated: 2 weeks ago) | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 360mW | BF256 | 3 | Single | 360mW | 11dB | 4pF | 30V | 30V | 30V | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD54008 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 150°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd54008-datasheets-2983.pdf | 5A | PowerSO-10 Exposed Bottom Pad | 2 | 3 | no | EAR99 | HIGH RELIABILITY | not_compliant | e0 | Tin/Lead (Sn/Pb) | 73W | DUAL | GULL WING | NOT SPECIFIED | PD54008 | 2 | Single | NOT SPECIFIED | 73W | 1 | FET General Purpose Power | 11.5dB | Not Qualified | R-PDSO-G2 | 5A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 8W | 150mA | 5A | 25V | LDMOS | 7.5V | |||||||||||||||||||||||||||||||||||||
| J310RLRPG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | 100MHz | DEPLETION MODE | RoHS Compliant | 2006 | /files/onsemiconductor-j310-datasheets-7181.pdf | 25V | 60mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Lead Free | 3 | 3 | OBSOLETE (Last Updated: 2 weeks ago) | yes | 8541.21.00.75 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | THROUGH-HOLE | 260 | J310 | 3 | Single | 40 | 1 | Other Transistors | 16dB | Not Qualified | 70mA | 25V | AMPLIFIER | 25V | JUNCTION | 10mA | 2.5 pF | 25V | N-Channel JFET | 10V | |||||||||||||||||||||||||||||||||||||||||
| MPF102G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 125°C | -65°C | DEPLETION MODE | RoHS Compliant | 2006 | /files/onsemiconductor-mpf102g-datasheets-2986.pdf | 25V | 10mA | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 3 | 3 | OBSOLETE (Last Updated: 4 days ago) | yes | 8541.21.00.95 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | MPF102 | 3 | Single | 40 | 1 | Other Transistors | Not Qualified | 7pF | 25V | AMPLIFIER | 0.2W | 25V | JUNCTION | VERY HIGH FREQUENCY B | 20mA | 25V | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||
| 2N3819 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Through Hole | 150°C | -65°C | 25V | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2n3819d74z-datasheets-2510.pdf | 25V | 50mA | TO-226-3, TO-92-3 (TO-226AA) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 201mg | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | 350mW | 2N3819 | Single | 350mW | TO-92-3 | 8pF | 20mA | 25V | 15V | 25V | 100mA | 25V | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||
| BF256A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 800MHz | DEPLETION MODE | Non-RoHS Compliant | 2009 | /files/onsemiconductor-bf256ag-datasheets-2981.pdf | -30V | 7mA | TO-226-3, TO-92-3 (TO-226AA) | Contains Lead | 3 | 3 | OBSOLETE (Last Updated: 3 days ago) | no | not_compliant | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | NO | 350mW | BOTTOM | THROUGH-HOLE | 240 | BF256 | 3 | 150°C | Single | 30 | 350mW | 1 | Other Transistors | 11dB | Not Qualified | 3mA | -30V | SILICON | JUNCTION | 30V | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||
| PD55003 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 150°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd55003-datasheets-2993.pdf | 2.5A | PowerSO-10 Exposed Bottom Pad | 2 | 3 | no | EAR99 | HIGH RELIABILITY | not_compliant | e0 | Tin/Lead (Sn/Pb) | 31.7W | DUAL | GULL WING | NOT SPECIFIED | PD55003 | 2 | Single | NOT SPECIFIED | 31.7W | 1 | FET General Purpose Power | 17dB | Not Qualified | R-PDSO-G2 | 2.5A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 3W | 50mA | 40V | LDMOS | 12.5V | ||||||||||||||||||||||||||||||||||||||
| J310_D74Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Box (TB) | 1 (Unlimited) | 25V | 450MHz | /files/onsemiconductor-j310-datasheets-7180.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | J310 | 12dB | TO-92-3 | 3dB | 60mA | 10mA | N-Channel JFET | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5486RLRPG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | DEPLETION MODE | RoHS Compliant | 2006 | 25V | 30mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Lead Free | 3 | 3 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | THROUGH-HOLE | 260 | 2N5486 | 3 | 150°C | Single | 40 | 1 | Other Transistors | Not Qualified | 30mA | 25V | SILICON | AMPLIFIER | 25V | JUNCTION | ULTRA HIGH FREQUENCY B | 1 pF | 10dB | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||||||
| J309 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Through Hole | 150°C | -55°C | 100MHz | DEPLETION MODE | Non-RoHS Compliant | /files/onsemiconductor-j310-datasheets-7181.pdf | 25V | 10mA | TO-226-3, TO-92-3 (TO-226AA) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 3 | 201mg | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | no | No | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | 625mW | BOTTOM | 240 | J309 | 3 | Single | 30 | 350mW | 1 | Other Transistors | 16dB | 3 dB | 30mA | -25V | AMPLIFIER | 25V | JUNCTION | -25V | 10mA | 2.5 pF | 25V | N-Channel JFET | 10V | |||||||||||||||||||||||||||||||||
| PTFA241301E V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tray | 3 (168 Hours) | 65V | 2.42GHz | 2007 | /files/infineontechnologies-ptfa241301ev1-datasheets-2959.pdf | 2-Flatpack, Fin Leads | 14dB | H-30260-2 | 130W | 10μA | 1.15A | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE3514S02-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Strip | 1 (Unlimited) | 125°C | -65°C | 4V | 20GHz | RoHS Compliant | 4-SMD, Flat Leads | Lead Free | 4 | No | 165mW | 10dB | S02 | 0.75dB | 70mA | 3V | 70mA | 10mA | 4V | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BG3130RE6327BTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | RoHS Compliant | 2005 | /files/infineontechnologies-bg3130re6327btsa1-datasheets-2963.pdf | 25mA | 6-VSSOP, SC-88, SOT-363 | BG3130 | 24dB | PG-SOT363-6 | 1.3dB | 25mA | 14mA | 2 N-Channel (Dual) | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF245B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | DEPLETION MODE | Non-RoHS Compliant | 2009 | /files/onsemiconductor-bf245bd27z-datasheets-2494.pdf | 30V | 10mA | TO-226-3, TO-92-3 (TO-226AA) | 4.58mm | 4.58mm | 3.86mm | Lead Free | 3 | 200mg | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | no | EAR99 | not_compliant | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | 350mW | BOTTOM | 240 | BF245 | 3 | Single | 30 | 350mW | 1 | Other Transistors | Not Qualified | 15mA | -30V | AMPLIFIER | 15V | JUNCTION | -30V | ULTRA HIGH FREQUENCY B | 100mA | 0.1A | 30V | N-Channel JFET | |||||||||||||||||||||||||||||||||||
| BG3123RE6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | RoHS Compliant | 2006 | /files/infineontechnologies-bg3123re6327htsa1-datasheets-2911.pdf | 20mA | 6-VSSOP, SC-88, SOT-363 | BG3123 | 25dB | PG-SOT363-6 | 1.8dB | 25mA 20mA | 14mA | 2 N-Channel (Dual) | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF2030WE6814BTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | RoHS Compliant | 2007 | /files/infineontechnologies-bf2030e6814htsa1-datasheets-2885.pdf | 40mA | SC-82A, SOT-343 | BF2030 | 23dB | PG-SOT343-4 | 1.5dB | 40mA | 10mA | N-Channel | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF5030WE6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | RoHS Compliant | 2009 | /files/infineontechnologies-bf5030wh6327xtsa1-datasheets-1511.pdf | 25mA | SC-82A, SOT-343 | BF5030 | 24dB | PG-SOT343-4 | 1.3dB | 25mA | 10mA | N-Channel | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BG 5130R E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | 2006 | /files/infineontechnologies-bg5130re6327-datasheets-2923.pdf | 6-VSSOP, SC-88, SOT-363 | 24dB | PG-SOT363-6 | 1.3dB | 25mA | 10mA | 2 N-Channel (Dual) | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTFA240451E V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tray | 3 (168 Hours) | 65V | 2.48GHz | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ptfa240451ev1-datasheets-2927.pdf | 2-Flatpack, Fin Leads | 2 | HIGH RELIABILITY | compliant | YES | DUAL | NOT SPECIFIED | 200°C | NOT SPECIFIED | 1 | 14dB | S-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 45W | 10μA | 450mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PTF080101M V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tape & Reel (TR) | 3 (168 Hours) | 65V | 960MHz | ROHS3 Compliant | 2009 | /files/infineontechnologies-ptf080101mv1-datasheets-2931.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 16dB | 10W | 1μA | 180mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE3511S02-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 4V | 12GHz | /files/cel-ne3511s02a-datasheets-2935.pdf | 4-SMD, Flat Leads | 13.5dB | 0.3dB | 70mA | 10mA | HFET | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF245C_D26Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | /files/onsemiconductor-bf245bd27z-datasheets-2494.pdf | TO-226-3, TO-92-3 (TO-226AA) | BF245 | TO-92-3 | 25mA | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATF-52189-TR1 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 2 (1 Year) | 7V | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/broadcomlimited-atf52189blk-datasheets-9414.pdf | TO-243AA | 3 | 6 Weeks | EAR99 | LOW NOISE | compliant | 8541.21.00.75 | e3 | Matte Tin (Sn) | YES | SINGLE | FLAT | 260 | 150°C | 40 | 1 | FET RF Small Signals | 16dB | Not Qualified | R-PSSO-F3 | 1.5dB | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 7V | HIGH ELECTRON MOBILITY | 27dBm | 500mA | 200mA | 0.3A | 1.5W | E-pHEMT | 4.5V |
