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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Power Gain | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Highest Frequency Band | Current Rating (Amps) | JEDEC-95 Code | Min Breakdown Voltage | Current - Test | Drain Current-Max (Abs) (ID) | Drain to Source Resistance | Drain to Source Breakdown Voltage | Power Dissipation Ambient-Max | Transistor Type | Nominal Vgs | Voltage - Test |
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| ATF-34143-BLKG | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Strip | 1 (Unlimited) | 5.5V | 2GHz | DEPLETION MODE | RoHS Compliant | 2012 | SC-82A, SOT-343 | 4 | 6 Weeks | EAR99 | compliant | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | ATF-34143 | 160°C | NOT SPECIFIED | 1 | FET RF Small Signals | 17.5dB | Not Qualified | R-PDSO-G4 | 0.5dB | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 5.5V | HIGH ELECTRON MOBILITY | 20dBm | 145mA | 60mA | 0.725W | pHEMT FET | 4V | ||||||||||||||||||||||||||||||||||||||||
| ATF-331M4-TR2 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 160°C | -65°C | 2GHz | DEPLETION MODE | RoHS Compliant | 2013 | 5.5V | 305mA | 0505 (1412 Metric) | Lead Free | 4 | 7 Weeks | 4 | EAR99 | LOW NOISE | e4 | GOLD | 400mW | DUAL | NO LEAD | 260 | NOT SPECIFIED | 1 | FET RF Small Signal | 15dB | Not Qualified | 0.6dB | 305mA | -5V | SINGLE | AMPLIFIER | N-CHANNEL | 5.5V | HIGH ELECTRON MOBILITY | 19dBm | 60mA | pHEMT FET | 4V | ||||||||||||||||||||||||||||||||||||||||
| J304_D26Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | /files/onsemiconductor-j304-datasheets-2623.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 15mA | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE650103M-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tray | 1 (Unlimited) | 150°C | -65°C | 15V | 2.3GHz | RoHS Compliant | SOT-445 Variant | 3 | Single | 33W | 11dB | 5A | -7V | 40dBm | 1.5A | 100Ohm | 15V | MESFET | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| J210_D27Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 25V | /files/onsemiconductor-mmbfj210-datasheets-2572.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 15mA | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFG35002N6R5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 3.55GHz | ROHS3 Compliant | 2008 | /files/nxpusainc-mrfg35002n6r5-datasheets-2689.pdf | PLD-1.5 | MRFG35002 | 10dB | 1.5W | 65mA | pHEMT FET | 6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| J309_D27Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 25V | 450MHz | /files/onsemiconductor-j310-datasheets-7180.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | J309 | 12dB | 3dB | 30mA | 10mA | N-Channel JFET | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFG35003NR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 15V | 3.55GHz | ROHS3 Compliant | 2008 | /files/nxpusainc-mrfg35003nr5-datasheets-2667.pdf | PLD-1.5 | MRFG35003 | 11.5dB | 3W | 55mA | pHEMT FET | 12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE3512S02-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | 4V | 12GHz | RoHS Compliant | 4-SMD, Flat Leads | 4 | No | NE3512 | 165mW | 13.5dB | 0.35dB | 70mA | -3V | 10mA | 4V | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTFA092213ELV4R250XTMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tape & Reel (TR) | 1 (Unlimited) | 200°C | -40°C | ENHANCEMENT MODE | RoHS Compliant | 2010 | 2 | 7 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-CDFM-F2 | 12V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| J211 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | 25V | RoHS Compliant | /files/onsemiconductor-mmbfj210-datasheets-2572.pdf | 25V | 20mA | TO-226-3, TO-92-3 (TO-226AA) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 200.998119mg | 3 | OBSOLETE (Last Updated: 3 days ago) | No | 350mW | Single | 350mW | TO-92-3 | 20mA | -25V | 1.5V | 20mA | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE350184C | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 4V | 20GHz | Micro-X ceramic (84C) | 165mW | 13.5dB | 0.7dB | 10mA | 70mA | 3V | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE3514S02-T1C-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | 4V | 20GHz | RoHS Compliant | /files/cel-ne3514s02t1ca-datasheets-7541.pdf | 70mA | 4-SMD, Flat Leads | Lead Free | 4 | No | 165mW | 10dB | S02 | 0.75dB | 70mA | -3V | 4V | 70mA | 10mA | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATF-331M4-BLK | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 160°C | -65°C | 2GHz | DEPLETION MODE | RoHS Compliant | 2005 | 5.5V | 305mA | 0505 (1412 Metric) | Lead Free | 4 | 7 Weeks | 4 | EAR99 | No | e4 | GOLD | 400mW | DUAL | 260 | 1 | FET RF Small Signal | 15dB | 0.6dB | 305mA | -5V | SINGLE | AMPLIFIER | N-CHANNEL | 5.5V | HIGH ELECTRON MOBILITY | 19dBm | 60mA | pHEMT FET | 4V | |||||||||||||||||||||||||||||||||||||||||||
| NE55410GR-AZ | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | 2.14GHz | RoHS Compliant | /files/cel-ne55410graz-datasheets-7543.pdf | 1A | 16-DFF, Exposed Pad | Lead Free | 62.709145mg | 16 | No | 40W | Dual | 2 | 13.5dB | 250mA | 7V | 65V | 2W | 35.4dBm | 250mA 1A | 65V | 20mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5245_L99Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 30V | /files/onsemiconductor-2n5245-datasheets-2476.pdf | TO-92-3 | 15mA | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFG35010NR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 15V | 3.55GHz | ROHS3 Compliant | 2008 | /files/nxpusainc-mrfg35010nr5-datasheets-2668.pdf | PLD-1.5 | MRFG35010 | 10dB | 9W | 180mA | pHEMT FET | 12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SD56150 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tube | 1 (Unlimited) | 150°C | -65°C | 860MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sd56150-datasheets-2670.pdf | 32V | 17A | M252 | Lead Free | 4 | 252 | EAR99 | 236W | FLAT | NOT SPECIFIED | SD56150 | 4 | Dual | NOT SPECIFIED | 236W | 1 | FET General Purpose Power | 16.5dB | Not Qualified | R-PDFM-F4 | 17A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 150W | 500mA | 65V | LDMOS | |||||||||||||||||||||||||||||||||||||||||
| ATF-521P8-BLK | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | SMD/SMT | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2014 | 4.5V | 500mA | 8-WFDFN Exposed Pad | Lead Free | 8 | 12 Weeks | No SVHC | 8 | EAR99 | Tin | No | e3 | 1.5W | DUAL | 260 | 1.5W | 1 | FET RF Small Signal | 17dB | 1.5dB | 500mA | 1V | 4.5V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 4.5V | 7V | HIGH ELECTRON MOBILITY | 26.5dBm | MO-229 | 200mA | 0.5A | pHEMT FET | 280 mV | |||||||||||||||||||||||||||||||||||
| NE34018-64-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 125°C | 2GHz | RoHS Compliant | 120mA | SC-82A, SOT-343 | 4 | 150mW | NE340 | 150mW | 16dB | 0.6dB | 80mA | -3V | 4V | 12dBm | 5mA | 4V | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD57002-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 960MHz | ENHANCEMENT MODE | ROHS3 Compliant | 65V | 250mA | PowerSO-10 Exposed Bottom Pad | Lead Free | 2 | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | 4.75W | DUAL | GULL WING | 250 | PD57002 | 10 | Single | 30 | 4.75W | 1 | FET General Purpose Power | R-PDSO-G2 | 250mA | 20V | 15dB | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 2W | 65V | 10mA | 0.25A | 65V | LDMOS | 28V | |||||||||||||||||||||||||||||||||||
| NE3503M04-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | 4V | 12GHz | ROHS3 Compliant | 70mA | SOT-343F | 4 | No | 125mW | 125mW | 12dB | M04 | 0.45dB | 70mA | -3V | 4V | 70mA | 10mA | 2V | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE6510179A-T1-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | 8V | 1.9GHz | RoHS Compliant | 4-SMD, Flat Leads | Lead Free | 4 | Single | 15W | 10dB | 79A | 2.8A | 4V | 32.5dBm | 2.8A | 6V | 200mA | 8V | HFET | 3.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF256C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 30V | /files/onsemiconductor-bf256c-datasheets-2609.pdf | TO-226-3, TO-92-3 (TO-226AA) | BF256 | TO-92-3 | 18mA | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SD2941-10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 200°C | -65°C | 175MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sd294110-datasheets-2610.pdf | 130V | 20A | M174 | Lead Free | 4 | 174 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 389W | RADIAL | FLAT | SD2941 | 4 | Single | 389W | 1 | FET General Purpose Power | O-PRFM-F4 | 415pF | 20A | 20V | 15.8dB | SOURCE | 130V | METAL-OXIDE SEMICONDUCTOR | 200W | 175W | 250mA | 130V | N-Channel | 50V | ||||||||||||||||||||||||||||||||||||||||
| BLC8G27LS-245AVZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.5GHz~2.69GHz | Non-RoHS Compliant | /files/ampleonusainc-blc8g27ls245avz-datasheets-2611.pdf | SOT-1251-2 | 14.5dB | SOT-1251-2 | 56W | 500mA | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| J300_D26Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 25V | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTFA081501E1V4XWSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 2016 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| J310_D75Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Box (TB) | 1 (Unlimited) | 25V | 450MHz | /files/onsemiconductor-j310-datasheets-7180.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | J310 | 12dB | TO-92-3 | 3dB | 60mA | 10mA | N-Channel JFET | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTFA192001EV4T350XWSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 2016 |
