Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Output | Current Rating (Amps) | JEDEC-95 Code | Current - Test | Drain Current-Max (Abs) (ID) | Power Dissipation Ambient-Max | Transistor Type | Voltage - Test |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ATF-521P8-TR2 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2014 | 4.5V | 500mA | 8-WFDFN Exposed Pad | Lead Free | 8 | 12 Weeks | 8 | EAR99 | LOW NOISE | Tin | e3 | 1.5W | DUAL | NO LEAD | 260 | NOT SPECIFIED | 1.5W | 1 | FET RF Small Signal | 17dB | Not Qualified | 1.5dB | 500mA | 1V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 4.5V | 7V | HIGH ELECTRON MOBILITY | 26.5dBm | MO-229 | 200mA | 0.5A | pHEMT FET | |||||||||||||||||||||||
PTF210101M V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.17GHz | 2009 | /files/infineontechnologies-ptf210101mv1-datasheets-2907.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 15dB | PG-RFP-10 | 10W | 1μA | 180mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
BG3123RE6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | RoHS Compliant | 2006 | /files/infineontechnologies-bg3123re6327htsa1-datasheets-2911.pdf | 20mA | 6-VSSOP, SC-88, SOT-363 | BG3123 | 25dB | PG-SOT363-6 | 1.8dB | 25mA 20mA | 14mA | 2 N-Channel (Dual) | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||
BF2030WE6814BTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | RoHS Compliant | 2007 | /files/infineontechnologies-bf2030e6814htsa1-datasheets-2885.pdf | 40mA | SC-82A, SOT-343 | BF2030 | 23dB | PG-SOT343-4 | 1.5dB | 40mA | 10mA | N-Channel | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||
BF5030WE6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | RoHS Compliant | 2009 | /files/infineontechnologies-bf5030wh6327xtsa1-datasheets-1511.pdf | 25mA | SC-82A, SOT-343 | BF5030 | 24dB | PG-SOT343-4 | 1.3dB | 25mA | 10mA | N-Channel | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||
BG 5130R E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | 2006 | /files/infineontechnologies-bg5130re6327-datasheets-2923.pdf | 6-VSSOP, SC-88, SOT-363 | 24dB | PG-SOT363-6 | 1.3dB | 25mA | 10mA | 2 N-Channel (Dual) | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
PTFA240451E V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tray | 3 (168 Hours) | 65V | 2.48GHz | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ptfa240451ev1-datasheets-2927.pdf | 2-Flatpack, Fin Leads | 2 | HIGH RELIABILITY | compliant | YES | DUAL | NOT SPECIFIED | 200°C | NOT SPECIFIED | 1 | 14dB | S-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 45W | 10μA | 450mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||
PTF080101M V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tape & Reel (TR) | 3 (168 Hours) | 65V | 960MHz | ROHS3 Compliant | 2009 | /files/infineontechnologies-ptf080101mv1-datasheets-2931.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 16dB | 10W | 1μA | 180mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
NE3511S02-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 4V | 12GHz | /files/cel-ne3511s02a-datasheets-2935.pdf | 4-SMD, Flat Leads | 13.5dB | 0.3dB | 70mA | 10mA | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF245C_D26Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | /files/onsemiconductor-bf245bd27z-datasheets-2494.pdf | TO-226-3, TO-92-3 (TO-226AA) | BF245 | TO-92-3 | 25mA | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ATF-52189-TR1 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 2 (1 Year) | 7V | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/broadcomlimited-atf52189blk-datasheets-9414.pdf | TO-243AA | 3 | 6 Weeks | EAR99 | LOW NOISE | compliant | 8541.21.00.75 | e3 | Matte Tin (Sn) | YES | SINGLE | FLAT | 260 | 150°C | 40 | 1 | FET RF Small Signals | 16dB | Not Qualified | R-PSSO-F3 | 1.5dB | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 7V | HIGH ELECTRON MOBILITY | 27dBm | 500mA | 200mA | 0.3A | 1.5W | E-pHEMT | 4.5V | |||||||||||||||||||||||||
PTFA261301E V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tray | 3 (168 Hours) | 65V | 2.68GHz | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ptfa261301ev1-datasheets-2940.pdf | 2-Flatpack, Fin Leads | 2 | HIGH RELIABILITY | compliant | YES | DUAL | NOT SPECIFIED | 200°C | NOT SPECIFIED | 1 | 13.5dB | R-XDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 130W | 10μA | 1.4A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||
ATF-531P8-TR2 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2014 | 4V | 300mA | 8-WFDFN Exposed Pad | Lead Free | 8 | 12 Weeks | 8 | EAR99 | LOW NOISE | Tin | e3 | 1W | DUAL | NO LEAD | 260 | ATF-531P8 | NOT SPECIFIED | 1W | 1 | FET RF Small Signal | 20dB | Not Qualified | 0.6dB | 300mA | 1V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 4V | 7V | HIGH ELECTRON MOBILITY | 24.5dBm | MO-229 | 135mA | 0.3A | E-pHEMT | ||||||||||||||||||||||
ATF-52189-TR2 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 2 (1 Year) | 7V | 2GHz | 2013 | /files/broadcomlimited-atf52189blk-datasheets-9414.pdf | TO-243AA | 16dB | SOT-89 | 1.5dB | 27dBm | 500mA | 200mA | E-pHEMT | 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
ATF-501P8-TR1 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2008 | 8-WFDFN Exposed Pad | 8 | 6 Weeks | EAR99 | LOW NOISE | compliant | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | 150°C | NOT SPECIFIED | 1 | FET RF Small Signal | 15dB | Not Qualified | S-PDSO-N8 | 1dB | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 7V | HIGH ELECTRON MOBILITY | 29dBm | 1A | MO-229 | 280mA | 1A | 3.5W | E-pHEMT | 4.5V | |||||||||||||||||||||||||
ATF-34143-TR2G | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 5.5V | 2GHz | DEPLETION MODE | RoHS Compliant | 2012 | SC-82A, SOT-343 | 4 | 6 Weeks | EAR99 | compliant | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | ATF-34143 | 160°C | NOT SPECIFIED | 1 | FET RF Small Signals | 17.5dB | Not Qualified | R-PDSO-G4 | 0.5dB | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 5.5V | HIGH ELECTRON MOBILITY | 20dBm | 145mA | 60mA | 0.725W | pHEMT FET | 4V | ||||||||||||||||||||||||||||
ATF-33143-TR1G | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 5.5V | 2GHz | DEPLETION MODE | RoHS Compliant | 2005 | SC-82A, SOT-343 | 4 | 6 Weeks | EAR99 | LOW NOISE | compliant | 8541.21.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 160°C | NOT SPECIFIED | 1 | FET RF Small Signals | 15dB | Not Qualified | R-PDSO-G4 | 0.5dB | GALLIUM ARSENIDE | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 5.5V | HIGH ELECTRON MOBILITY | 22dBm | 305mA | 80mA | 0.6W | pHEMT FET | 4V | |||||||||||||||||||||||||||
BF245C_D74Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Box (TB) | 1 (Unlimited) | 30V | /files/onsemiconductor-bf245bd27z-datasheets-2494.pdf | TO-226-3, TO-92-3 (TO-226AA) | BF245 | TO-92-3 | 25mA | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1005SE6433XT | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 8V | 800MHz | ROHS3 Compliant | 2007 | /files/infineontechnologies-bf1005se6433xt-datasheets-2834.pdf | 25mA | TO-253-4, TO-253AA | 4 | 1GHz | 200mW | BF1005 | 1 | 22dB | PG-SOT143-4 | 1.6dB | 25mA | 25mA | N-Channel | 5V | ||||||||||||||||||||||||||||||||||||||||||||
ATF-36163-TR1G | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 3V | 4GHz | DEPLETION MODE | RoHS Compliant | 2005 | 6-TSSOP, SC-88, SOT-363 | 6 | 6 Weeks | EAR99 | LOW NOISE | compliant | 8541.21.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 150°C | NOT SPECIFIED | 1 | FET RF Small Signal | 15.8dB | Not Qualified | R-PDSO-G6 | 0.6dB | GALLIUM ARSENIDE | SINGLE | AMPLIFIER | N-CHANNEL | 3V | HIGH ELECTRON MOBILITY | 5dBm | 40mA | 15mA | 0.04A | 0.18W | pHEMT FET | 2V | |||||||||||||||||||||||||||
BF2040WE6814HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | 2007 | /files/infineontechnologies-bf2040we6814htsa1-datasheets-2841.pdf | SC-82A, SOT-343 | BF2040 | 23dB | PG-SOT343-4 | 1.6dB | 40mA | 15mA | N-Channel | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1009SRE6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 12V | 800MHz | DUAL GATE, DEPLETION MODE | RoHS Compliant | 2007 | /files/infineontechnologies-bf1009sre6327htsa1-datasheets-2845.pdf | 25mA | SOT-143R | 4 | 4 | EAR99 | LOW NOISE | 200mW | DUAL | GULL WING | 1 | 22dB | 1.4dB | 25mA | SINGLE | SOURCE | AMPLIFIER | METAL-OXIDE SEMICONDUCTOR | 0.025A | N-Channel | 9V | |||||||||||||||||||||||||||||||||||||
ATF-55143-TR2G | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2012 | 2.7V | 100mA | SC-82A, SOT-343 | Lead Free | 4 | 6 Weeks | 4 | EAR99 | Tin | e3 | 270mW | DUAL | GULL WING | 260 | ATF-55143 | NOT SPECIFIED | 270mW | 1 | FET RF Small Signal | 17.7dB | Not Qualified | 0.6dB | 100mA | 1V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 2.7V | 5V | HIGH ELECTRON MOBILITY | 14.4dBm | 10mA | 0.1A | E-pHEMT | ||||||||||||||||||||||||
BF1005E6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 8V | 800MHz | DUAL GATE, ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-bf1005e6327htsa1-datasheets-2855.pdf | 25mA | TO-253-4, TO-253AA | 4 | 26 Weeks | 4 | yes | EAR99 | LOW NOISE | 200mW | DUAL | GULL WING | NOT SPECIFIED | BF1005 | NOT SPECIFIED | 1 | 19dB | Not Qualified | 1.6dB | 25mA | SINGLE | SOURCE | METAL-OXIDE SEMICONDUCTOR | 0.025A | N-Channel | 5V | ||||||||||||||||||||||||||||||||
BF1005SE6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 8V | 800MHz | RoHS Compliant | 2007 | /files/infineontechnologies-bf1005se6433xt-datasheets-2834.pdf | 25mA | TO-253-4, TO-253AA | 4 | EAR99 | 200mW | BF1005 | 1 | 22dB | 1.6dB | 25mA | N-Channel | 5V | ||||||||||||||||||||||||||||||||||||||||||||||
ATF-501P8-TR2 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2014 | 4.5V | 1A | 8-WFDFN Exposed Pad | Lead Free | 8 | 6 Weeks | 8 | EAR99 | LOW NOISE | Tin | e3 | 3.5W | DUAL | NO LEAD | 260 | NOT SPECIFIED | 3.5W | 1 | FET RF Small Signal | 15dB | Not Qualified | 1dB | 1A | 800mV | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 4.5V | 7V | HIGH ELECTRON MOBILITY | 29dBm | MO-229 | 280mA | 1A | E-pHEMT | |||||||||||||||||||||||
ATF-511P8-TR1 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2008 | 8-WFDFN Exposed Pad | 8 | 6 Weeks | EAR99 | LOW NOISE | compliant | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | 150°C | NOT SPECIFIED | 1 | FET RF Small Signal | 14.8dB | Not Qualified | R-PDSO-N8 | 1.4dB | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 7V | HIGH ELECTRON MOBILITY | 30dBm | 1A | 200mA | 1A | 3W | E-pHEMT | 4.5V | ||||||||||||||||||||||||||
ATF-50189-TR1 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 2 (1 Year) | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/broadcomlimited-atf50189blk-datasheets-2685.pdf | 4.5V | 1A | TO-243AA | Lead Free | 3 | 6 Weeks | No SVHC | 3 | EAR99 | Tin | No | 8541.21.00.75 | e3 | 2.25W | FLAT | 260 | ATF-50189 | Single | 1 | FET RF Small Signal | 15.5dB | 1.1dB | 1A | 800mV | AMPLIFIER | N-CHANNEL | 7V | 7V | HIGH ELECTRON MOBILITY | 29dBm | MO-229 | 280mA | 1A | E-pHEMT | ||||||||||||||||||||||||
BF1009SE6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 12V | 800MHz | DUAL GATE, DEPLETION MODE | RoHS Compliant | 2007 | /files/infineontechnologies-bf1009sre6327htsa1-datasheets-2845.pdf | 25mA | TO-253-4, TO-253AA | 4 | 4 | EAR99 | No | 200mW | DUAL | GULL WING | 1 | 22dB | 1.4dB | 25mA | SINGLE | SOURCE | AMPLIFIER | METAL-OXIDE SEMICONDUCTOR | 0.025A | N-Channel | 9V | |||||||||||||||||||||||||||||||||||||
ATF-50189-TR2 | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 2 (1 Year) | 7V | 2GHz | 2013 | /files/broadcomlimited-atf50189blk-datasheets-2685.pdf | TO-243AA | ATF-50189 | 15.5dB | SOT-89 | 1.1dB | 29dBm | 1A | 280mA | E-pHEMT | 4.5V |
Please send RFQ , we will respond immediately.