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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Rise Time | Fall Time (Typ) | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Highest Frequency Band | Current Rating (Amps) | JEDEC-95 Code | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Power Dissipation Ambient-Max | Transistor Type | Voltage - Test |
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| MAGX-001214-250L00 | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 95°C | -40°C | 65V | 1.2GHz~1.4GHz | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/macomtechnologysolutions-magx001214sb1ppr-datasheets-8797.pdf | 9A | Ceramic | 2 | 3 | EAR99 | No | 192W | DUAL | FLAT | 2 | 1 | 17.6dB | R-CDFM-F2 | 9.1A | -8V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 175V | HIGH ELECTRON MOBILITY | 250W | 250mA | 8.8A | HEMT | 50V | |||||||||||||||||||||||||||||||||||||
| MAGX-000912-250L00 | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 65V | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/macomtechnologysolutions-magx000912sb1ppr-datasheets-1129.pdf | 2 | EAR99 | compliant | YES | DUAL | FLAT | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | 18.6dB | R-CDFM-F2 | GALLIUM NITRIDE | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | HIGH ELECTRON MOBILITY | 250W | L B | 8.6A | 250mA | 14.2A | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||||||
| NE3517S03-T1C-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | 4V | 20GHz | RoHS Compliant | /files/cel-ne3517s03t1ca-datasheets-7353.pdf | 15mA | 4-SMD, Flat Leads | Lead Free | 4 | No | 13.5dB | 0.7dB | 70mA | -3V | 10mA | HFET | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MAGX-000035-01500P | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 65V | 3.5GHz | DEPLETION MODE | RoHS Compliant | 2015 | /files/macomtechnologysolutions-magx000035pb1ppr-datasheets-1045.pdf | 1mA | 14-VDFN Exposed Pad | 14 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | NO LEAD | 260 | 95°C | NOT SPECIFIED | 1 | FET RF Small Signal | 14dB | R-PDSO-N14 | GALLIUM NITRIDE | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | JUNCTION | 14W | 35mA | 17W | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||||
| ARF443 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | Non-RoHS Compliant | TO-247-3 | TO-247AD | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ARF442 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-247-3 | NO | 150°C | FET General Purpose Power | Single | N-CHANNEL | 167W | METAL-OXIDE SEMICONDUCTOR | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3476(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -45°C | 520MHz | RoHS Compliant | 2009 | 3A | TO-271AA | Lead Free | 3 | unknown | 20W | 1 | 11.4dB | 3A | 10V | 20V | 7W | 500mA | N-Channel | 7.2V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MAGX-000035-030000 | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 95°C | -40°C | 30MHz~3.5GHz | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/macomtechnologysolutions-magx000035030000-datasheets-1913.pdf | 2.5mA | Ceramic | 2 | 3 | EAR99 | No | 27W | DUAL | FLAT | 2 | 1 | 13.6dB | R-CDFM-F2 | 1.2A | -8V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 175V | HIGH ELECTRON MOBILITY | 30W | 100mA | HEMT | 50V | |||||||||||||||||||||||||||||||||||||||
| MAGX-000035-010000 | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 65V | 30MHz~3.5GHz | RoHS Compliant | 2013 | /files/macomtechnologysolutions-magx000035sb2ppr-datasheets-2412.pdf | 17.5dB | 40dBm | 490mA | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MAGX-003135-120L00 | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 95°C | -40°C | 65V | 3.1GHz~3.5GHz | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/macomtechnologysolutions-magx003135sb4ppr-datasheets-1108.pdf | 9mA | Ceramic | 2 | 3 | EAR99 | No | 170W | DUAL | FLAT | 2 | 1 | 11.2dB | R-CDFM-F2 | 6.7A | -8V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 175V | HIGH ELECTRON MOBILITY | 120W | 300mA | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||
| ARF444 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | NO | 150°C | FET General Purpose Power | Single | N-CHANNEL | 208W | METAL-OXIDE SEMICONDUCTOR | 6.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFG35010ANT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 15V | 3.55GHz | DEPLETION MODE | ROHS3 Compliant | 2012 | /files/nxpusainc-mrfg35010ant1-datasheets-1664.pdf | PLD-1.5 | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | QUAD | NO LEAD | 260 | MRFG35010 | 175°C | 40 | 1 | FET RF Small Signal | 10dB | Not Qualified | R-PQSO-N4 | GALLIUM ARSENIDE | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 15V | HIGH ELECTRON MOBILITY | 9W | 130mA | pHEMT FET | 12V | ||||||||||||||||||||||||||||||||||||
| MAGX-000035-05000P | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 65V | 1MHz | RoHS Compliant | 2014 | /files/macomtechnologysolutions-magx000035pb2ppr-datasheets-1106.pdf | 3mA | 14-VDFN Exposed Pad | 14dB | 12W | 100mA | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MAGX-002731-030L00 | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 95°C | -40°C | 65V | 2.7GHz~3.1GHz | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/macomtechnologysolutions-magx002731030l00-datasheets-1920.pdf | 1.5A | Ceramic | 2 | 3 | EAR99 | No | 27W | DUAL | FLAT | 2 | 1 | 11.2dB | R-CDFM-F2 | 3A | -8V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 175V | HIGH ELECTRON MOBILITY | 30W | 250mA | 3A | HEMT | 50V | |||||||||||||||||||||||||||||||||||||
| BLF6G27L-50BN,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf6g27l50bn118-datasheets-1379.pdf | SOT-1112A | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | QUAD | UNSPECIFIED | NOT SPECIFIED | BLF6G27 | NOT SPECIFIED | 2 | 16.5dB | S-CQFM-X6 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 3W | 430mA | 12A | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||
| ARF447G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 900V | 40.68MHz | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-arf447g-datasheets-1891.pdf | 6.5A | TO-247-3 | Lead Free | 3 | 3 Weeks | 3 | OBSOLETE (Last Updated: 1 month ago) | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | 15dB | Not Qualified | SILICON | SINGLE | SOURCE | METAL-OXIDE SEMICONDUCTOR | 140W | TO-247AD | 900V | N-Channel | 250V | |||||||||||||||||||||||||||||||||||||
| VRF191MP | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF2425M7LS100J | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf2425m7l100u-datasheets-1832.pdf | SOT-502B | 13 Weeks | BLF2425 | 18dB | SOT502B | 20W | 900mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ARF449AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | 81.36MHz | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/microsemicorporation-arf449ag-datasheets-1896.pdf | 9A | TO-247-3 | Lead Free | 3 | 22 Weeks | 38.000013g | LIMITED TIME BUY (Last Updated: 3 weeks ago) | no | EAR99 | 165W | SINGLE | 1 | 13dB | R-PSFM-T3 | 3.1ns | 3 ns | 9A | 30V | SINGLE | SOURCE | AMPLIFIER | 450V | METAL-OXIDE SEMICONDUCTOR | 90W | 9A | 40 pF | 450V | 32ns | N-Channel | 150V | ||||||||||||||||||||||||||||||||||
| ARF521 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 175°C | -55°C | 500V | 81MHz | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | /files/microsemicorporation-arf521-datasheets-1899.pdf | 10A | M174 | 4 | 27 Weeks | OBSOLETE (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | e0 | TIN LEAD | YES | 250W | RADIAL | FLAT | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | 15dB | Not Qualified | O-CRFM-F4 | 10A | SINGLE | AMPLIFIER | 500V | METAL-OXIDE SEMICONDUCTOR | 150W | 50mA | N-Channel | 125V | ||||||||||||||||||||||||||||||||||
| ARF473 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 200°C | -55°C | 500V | 130MHz | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | /files/microsemicorporation-arf473-datasheets-1901.pdf | 10A | 4 | 5 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | e0 | Tin/Lead (Sn/Pb) | 500W | FLAT | 2 | 14dB | Not Qualified | R-CDFM-F4 | 10A | AMPLIFIER | METAL-OXIDE SEMICONDUCTOR | 300W | 150mA | 18ns | 2 N-Channel (Dual) Common Source | 135V | |||||||||||||||||||||||||||||||||||||||||
| MAGX-000035-01000S | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 65V | 30MHz~3.5GHz | RoHS Compliant | 2013 | /files/macomtechnologysolutions-magx000035sb2ppr-datasheets-2412.pdf | 17.5dB | 40dBm | 490mA | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ARF446G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | 40.68MHz | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-arf447g-datasheets-1891.pdf | 6.5A | TO-247-3 | Lead Free | 3 | OBSOLETE (Last Updated: 3 weeks ago) | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | 15dB | Not Qualified | R-PSFM-T3 | 6.5A | SINGLE | SOURCE | 230W | METAL-OXIDE SEMICONDUCTOR | 140W | TO-247AD | 900V | N-Channel | 250V | ||||||||||||||||||||||||||||||||||||||
| BLF8G22LS-160BV,11 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf8g22ls160bv11-datasheets-1344.pdf | SOT-1120B | 6 | 26 Weeks | EAR99 | unknown | IEC-60134 | YES | QUAD | UNSPECIFIED | NOT SPECIFIED | BLF8G22 | NOT SPECIFIED | 2 | 18dB | R-CQFP-X6 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 55W | 1.3A | LDMOS (Dual), Common Source | 32V | |||||||||||||||||||||||||||||||||||||||||
| VRF3933MP | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 250V | 30MHz | ENHANCEMENT MODE | RoHS Compliant | 1998 | 20A | M177 | 4 | YES | RADIAL | FLAT | 200°C | 1 | 28dB | O-CRFM-F4 | SILICON | SINGLE | SOURCE | AMPLIFIER | 250V | METAL-OXIDE SEMICONDUCTOR | 350W | 250mA | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G20LS-200V,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 1.81GHz~1.88GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf8g20ls200v112-datasheets-8220.pdf | SOT-1120B | 6 | EAR99 | unknown | IEC-60134 | YES | QUAD | UNSPECIFIED | NOT SPECIFIED | BLF8G20 | NOT SPECIFIED | 1 | 17.5dB | R-CQFP-X6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 55W | 1.6A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||
| ARF445 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | NO | 150°C | FET General Purpose Power | Single | N-CHANNEL | 208W | METAL-OXIDE SEMICONDUCTOR | 6.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF2425M7L100J | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf2425m7l100u-datasheets-1832.pdf | SOT-502A | 13 Weeks | BLF2425 | 18dB | LDMOST | 20W | 900mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF988,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 110V | 860MHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf988112-datasheets-1854.pdf | SOT539A | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 20.8dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 110V | METAL-OXIDE SEMICONDUCTOR | 250W | 1.3A | LDMOS (Dual), Common Source | 50V | |||||||||||||||||||||||||||||||||||||||||||
| 2SK3074TE12LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 30V | 520MHz | RoHS Compliant | 2014 | TO-243AA | unknown | 14.9dB | 630mW | 1A | 50mA | N-Channel | 9.6V |
