Products
Manufacturer
RFQ
NEWS
ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Height | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Operating Temperature (Max) | Number of Channels | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Noise Figure | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Turn Off Time-Max (toff) | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ARF440 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 150V | 13.56MHz | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | /files/microsemicorporation-arf440-datasheets-1877.pdf | 11A | TO-247-3 | Contains Lead | NO | 150°C | FET General Purpose Power | 21dB | Single | 167W | METAL-OXIDE SEMICONDUCTOR | 125W | 200mA | N-Channel | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF2425M7LS100U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf2425m7l100u-datasheets-1832.pdf | SOT-502B | 13 Weeks | BLF2425 | 18dB | SOT502B | 20W | 900mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE5550979A-T1-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 30V | 900MHz | RoHS Compliant | 3A | 79A | 4 | No | 25W | NE5550 | 1 | 22dB | 3A | 6V | 38.6dBm | 200mA | LDMOS | 7.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G22LS-160BV,11 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf8g22ls160bv11-datasheets-1344.pdf | SOT-1120B | 6 | 26 Weeks | EAR99 | unknown | IEC-60134 | YES | QUAD | UNSPECIFIED | NOT SPECIFIED | BLF8G22 | NOT SPECIFIED | 2 | 18dB | R-CQFP-X6 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 55W | 1.3A | LDMOS (Dual), Common Source | 32V | |||||||||||||||||||||||||||||||||||||||||
| VRF3933MP | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 250V | 30MHz | ENHANCEMENT MODE | RoHS Compliant | 1998 | 20A | M177 | 4 | YES | RADIAL | FLAT | 200°C | 1 | 28dB | O-CRFM-F4 | SILICON | SINGLE | SOURCE | AMPLIFIER | 250V | METAL-OXIDE SEMICONDUCTOR | 350W | 250mA | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G20LS-200V,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 1.81GHz~1.88GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf8g20ls200v112-datasheets-8220.pdf | SOT-1120B | 6 | EAR99 | unknown | IEC-60134 | YES | QUAD | UNSPECIFIED | NOT SPECIFIED | BLF8G20 | NOT SPECIFIED | 1 | 17.5dB | R-CQFP-X6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 55W | 1.6A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||
| ARF445 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | NO | 150°C | FET General Purpose Power | Single | N-CHANNEL | 208W | METAL-OXIDE SEMICONDUCTOR | 6.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF2425M7L100J | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf2425m7l100u-datasheets-1832.pdf | SOT-502A | 13 Weeks | BLF2425 | 18dB | LDMOST | 20W | 900mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF988,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 110V | 860MHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf988112-datasheets-1854.pdf | SOT539A | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 20.8dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 110V | METAL-OXIDE SEMICONDUCTOR | 250W | 1.3A | LDMOS (Dual), Common Source | 50V | |||||||||||||||||||||||||||||||||||||||||||
| 2SK3074TE12LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 30V | 520MHz | RoHS Compliant | 2014 | TO-243AA | unknown | 14.9dB | 630mW | 1A | 50mA | N-Channel | 9.6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3075(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -45°C | 520MHz | RoHS Compliant | 2009 | 5A | TO-271AA | 3 | unknown | 20W | 1 | 11.7dB | 5A | 25V | 30V | 7.5W | 50mA | N-Channel | 9.6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF7G27L-135,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 2.6GHz~2.7GHz | SOT-502A | 13 Weeks | BLF7G27 | 16.5dB | 25W | 1.3A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G24LS-200P,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf8g24l200p118-datasheets-1765.pdf | SOT539B | 4 | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF8G24 | NOT SPECIFIED | 2 | 17.2dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 60W | 1.74A | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||
| NE5550279A-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | 30V | 900MHz | RoHS Compliant | 600mA | 4-SMD, Flat Leads | 4 | No | NE5550 | 22.5dB | 79A | 600mA | 6V | 33dBm | 600mA | 40mA | LDMOS | 7.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFM04U6P(TE12L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 470MHz | ENHANCEMENT MODE | RoHS Compliant | 2003 | 2A | TO-243AA | 18 Weeks | EAR99 | unknown | YES | 7W | 150°C | FET General Purpose Power | 13.3dB | 2A | 3V | Single | 16V | METAL-OXIDE SEMICONDUCTOR | 4.3W | 500mA | 2A | N-Channel | 6V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BLF7G15LS-200,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 1.47GHz~1.51GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf7g15ls200118-datasheets-1290.pdf | SOT-502B | 2 | 26 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF7G15 | NOT SPECIFIED | 1 | 19.5dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 50W | 56A | 1.6A | 56A | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||
| BLF8G24L-200P,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf8g24l200p118-datasheets-1765.pdf | SOT539A | 4 | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF8G24 | NOT SPECIFIED | 2 | 17.2dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 60W | 1.74A | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||
| NE3515S02-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | 12GHz | RoHS Compliant | /files/cel-ne3515s02a-datasheets-7338.pdf | 88mA | 4-SMD, Flat Leads | Lead Free | 4 | No | 165mW | NE3515 | 12.5dB | 0.3dB | 88mA | -3V | 4V | 14dBm | 10mA | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NE3513M04-T2-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | 4V | 12GHz | RoHS Compliant | 60mA | SOT-343F | 4 | No | 13dB | 0.65dB | 60mA | -3V | 125mW | 10mA | N-Channel GaAs HJ-FET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF7G24L-160P,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf7g24ls160p118-datasheets-1759.pdf | SOT539A | BLF7G24 | 18.5dB | SOT539A | 30W | 1.2A | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF7G21LS-160P,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.93GHz~1.99GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf7g21ls160p118-datasheets-1268.pdf | SOT-1121B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF7G21 | NOT SPECIFIED | 2 | 18dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 45W | 32.5A | 1.08A | 32.5A | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||
| BLF8G20LS-260A,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 1.88GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf8g20ls260a118-datasheets-1790.pdf | SOT539B | 4 | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF8G20 | NOT SPECIFIED | 2 | 15.9dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 50W | 750mA | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||
| ARF448AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | 40.68MHz | RoHS Compliant | 1998 | /files/microsemicorporation-arf448ag-datasheets-1792.pdf | 15A | TO-247-3 | 25.96mm | 3 | 22 Weeks | 38.000013g | LIMITED TIME BUY (Last Updated: 3 weeks ago) | no | HIGH RELIABILITY | No | 230W | SINGLE | 1 | 230W | 2 | 15dB | 150°C | R-PSFM-T3 | 7 ns | 5ns | 12 ns | 23 ns | 15A | 30V | SINGLE | SOURCE | AMPLIFIER | 450V | METAL-OXIDE SEMICONDUCTOR | 450V | N-Channel | 150V | |||||||||||||||||||||||||||||||||
| BLF7G24L-160P,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | 2011 | /files/ampleonusainc-blf7g24ls160p118-datasheets-1759.pdf | SOT539A | BLF7G24 | 18.5dB | SOT539A | 30W | 1.2A | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATF-58143-TR1G | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2005 | 3V | 100mA | SC-82A, SOT-343 | Lead Free | 4 | 6 Weeks | 4 | EAR99 | Tin | No | e3 | 500mW | DUAL | GULL WING | 260 | ATF-58143 | 500mW | 1 | FET RF Small Signals | 16.5dB | 0.5dB | 500mA | 1V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 3V | 5V | HIGH ELECTRON MOBILITY | 19dBm | 30mA | 0.1A | pHEMT FET | |||||||||||||||||||||||||||||||
| BLF8G27LS-140V,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.63GHz~2.69GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf8g27ls140v112-datasheets-1801.pdf | SOT-1120B | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | QUAD | UNSPECIFIED | NOT SPECIFIED | BLF8G27 | NOT SPECIFIED | 1 | 17.4dB | R-CQFP-X6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 45W | 1.3A | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||||||
| BLF25M612,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.45GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf25m612g112-datasheets-1730.pdf | SOT-975B | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF25M612 | NOT SPECIFIED | 1 | 19dB | S-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 12W | 10mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||
| ARF448BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | 450V | 40.68MHz | RoHS Compliant | /files/microsemicorporation-arf448ag-datasheets-1792.pdf | 15A | TO-247-3 | 3 | LIMITED TIME BUY (Last Updated: 3 weeks ago) | no | HIGH RELIABILITY | SINGLE | 2 | 15dB | R-PSFM-T3 | 15A | SINGLE | SOURCE | AMPLIFIER | 450V | METAL-OXIDE SEMICONDUCTOR | 140W | 100 pF | 65ns | N-Channel | 150V | ||||||||||||||||||||||||||||||||||||||||||||
| NE5550779A-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Strip | 1 (Unlimited) | 150°C | -55°C | 30V | 900MHz | RoHS Compliant | 2.1A | 4-SMD, Flat Leads | 4 | No | NE5550 | 22dB | 2.1A | 6V | 38.5dBm | 140mA | LDMOS | 7.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G27LS-100PJ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf8g27ls100pj-datasheets-1814.pdf | SOT-1121B | 4 | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF8G27 | NOT SPECIFIED | 2 | 18dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 25W | 860mA | LDMOS (Dual), Common Source | 28V |
