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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Input Capacitance | Rise Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXYH75N120B4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX4™ | Through Hole | -55°C~175°C TJ | Tube | Standard | /files/ixys-ixyh75n120b4-datasheets-0910.pdf | TO-247-3 | 24 Weeks | 1150W | 66ns | 1200V | 240A | 600V, 50A, 3 Ω, 15V | 2.2V @ 15V, 75A | 157nC | 440A | 22ns/182ns | 4.5mJ (on), 2.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKQ75N120CT2XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-ikq75n120ct2xksa1-datasheets-0911.pdf | TO-247-3 | 3 | 16 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 938W | 85 ns | 1200V | 150A | 563 ns | 600V, 75A, 6 Ω, 15V | 2.15V @ 15V, 75A | Trench Field Stop | 370nC | 300A | 37ns/328ns | 6.7mJ (on), 4.1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| APT150GN60B2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt150gn60b2g-datasheets-0912.pdf | TO-247-3 Variant | Lead Free | 3 | 24 Weeks | yes | LOW CONDUCTION LOSS, HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | 536W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 536W | TO-247AD | 600V | 154 ns | 600V | 220A | 575 ns | 400V, 150A, 1 Ω, 15V | 30V | 6.5V | 1.85V @ 15V, 150A | Trench Field Stop | 970nC | 450A | 44ns/430ns | 8.81mJ (on), 4.295mJ (off) | ||||||||||||||||||||||||||||||||||||
| IXGK300N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 300 | 14 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGK120N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | -55°C~150°C TJ | Standard | RoHS Compliant | TO-264-3, TO-264AA | 3 | 1 Weeks | yes | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 780W | 780W | 87ns | 123 ns | 600V | 280A | 520 ns | 480V, 100A, 2 Ω, 15V | 20V | 5V | 1.8V @ 15V, 100A | PT | 465nC | 600A | 40ns/227ns | 2.9mJ (on), 3.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IXGK50N120C3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/ixys-ixgx50n120c3h1-datasheets-0870.pdf | TO-264-3, TO-264AA | 3 | 8 Weeks | yes | LOW CONDUCTION LOSS | unknown | e1 | TIN SILVER COPPER | 460W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 460W | 75 ns | 1.2kV | 60 ns | 4.2V | 95A | 1200V | 485 ns | 600V, 40A, 2 Ω, 15V | 20V | 5V | 4.2V @ 15V, 40A | PT | 196nC | 240A | 31ns/123ns | 2mJ (on), 630μJ (off) | |||||||||||||||||||||||||||||||
| IXGH4N250C | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixgt4n250c-datasheets-3163.pdf | TO-247-3 | 3 | 14 Weeks | 150W | SINGLE | 3 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 150W | 2.5kV | 6V | 13A | 2500V | 471 ns | 1250V, 4A, 20 Ω, 15V | 20V | 5V | 6V @ 15V, 4A | 57nC | 46A | -/350ns | 360μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| IXGX72N60A3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/ixys-ixgk72n60a3h1-datasheets-0832.pdf | TO-247-3 | 3 | 8 Weeks | 3 | yes | LOW CONDUCTION LOSS | unknown | e1 | TIN SILVER COPPER | 540W | SINGLE | NOT SPECIFIED | IXG*72N60 | 3 | NOT SPECIFIED | 540W | 1 | Insulated Gate BIP Transistors | Not Qualified | 6.6nF | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 140 ns | 600V | 1.35V | 63 ns | 600V | 75A | 885 ns | 480V, 50A, 3 Ω, 15V | 20V | 5V | 1.35V @ 15V, 60A | PT | 230nC | 400A | 31ns/320ns | 1.4mJ (on), 3.5mJ (off) | |||||||||||||||||||||||||||||
| IXYH12N250C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/ixys-ixyh12n250c-datasheets-0901.pdf | TO-247-3 | 24 Weeks | 310W | 16ns | 2500V | 28A | 1250V, 12A, 10 Ω, 15V | 4.5V @ 15V, 12A | 56nC | 80A | 12ns/167ns | 3.56mJ (on), 1.7mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGX320N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | ROHS3 Compliant | 2010 | TO-247-3 | 3 | 20 Weeks | 3 | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7kW | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.7kW | 1 | Insulated Gate BIP Transistors | Not Qualified | COLLECTOR | POWER CONTROL | N-CHANNEL | 1700W | 600V | 600V | 115 ns | 600V | 500A | 780 ns | 480V, 100A, 1 Ω, 15V | 20V | 5V | 1.6V @ 15V, 100A | PT | 585nC | 1200A | 44ns/250ns | 2.7mJ (on), 3.5mJ (off) | ||||||||||||||||||||||||||||||||||
| IXYH8N250C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/ixys-ixyh8n250c-datasheets-0887.pdf | TO-247-3 | 24 Weeks | 280W | 5ns | 2500V | 29A | 1250V, 8A, 15 Ω, 15V | 4V @ 15V, 8A | 45nC | 70A | 11ns/180ns | 2.6mJ (on), 1.07mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBT42N170-TRL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Surface Mount | Standard | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 360W | 1700V | 80A | 850V, 42A, 10 Ω, 15V | 2.8V @ 15V, 42A | 188nC | 300A | 37ns/340ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH40N120B2D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh40n120b2d1-datasheets-0889.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | 6.500007g | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 380W | NOT SPECIFIED | IXG*40N120 | 3 | Single | NOT SPECIFIED | 380W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 100ns | 1.2kV | 2.9V | 79 ns | 1.2kV | 75A | 1200V | 770 ns | 960V, 40A, 2 Ω, 15V | 20V | 5V | 3.5V @ 15V, 40A | PT | 138nC | 200A | 21ns/290ns | 4.5mJ (on), 3mJ (off) | 270ns | ||||||||||||||||||||||||||
| IXGK400N30C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-264-3, TO-264AA | 18 Weeks | 10.000011g | IXG*400N30 | 300V | 400A | 400A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGX400N30A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgx400n30a3-datasheets-0890.pdf | TO-247-3 | 3 | 24 Weeks | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1kW | SINGLE | NOT SPECIFIED | IXG*400N30 | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 1000W | 300V | 100 ns | 1.15V | 400A | 555 ns | 20V | 5V | 1.15V @ 15V, 100A | PT | 560nC | 1200A | ||||||||||||||||||||||||||||||||||||
| APT80GA90LD40 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt80ga90ld40-datasheets-0904.pdf | TO-264-3, TO-264AA | 3 | 29 Weeks | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 625W | 3 | Single | 1 | R-PSFM-T3 | COLLECTOR | POWER CONTROL | N-CHANNEL | 25 ns | 900V | 49 ns | 900V | 145A | 320 ns | 600V, 47A, 4.7 Ω, 15V | 3.1V @ 15V, 47A | PT | 200nC | 239A | 18ns/149ns | 1652μJ (on), 1389μJ (off) | |||||||||||||||||||||||||||||||||||||||
| IXGX55N120A3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | 150°C | Insulated Gate BIP Transistors | N-CHANNEL | 460W | 125A | 1200V | 20V | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG8CH137K10F | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/infineontechnologies-irg8ch137k10f-datasheets-0892.pdf | Die | 16 Weeks | EAR99 | YES | UNSPECIFIED | NO LEAD | 1 | R-XXUC-N | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 160 ns | 1200V | 150A | 900 ns | 2 V | 600V, 150A, 2 Ω, 15V | 30V | 6.5V | 2V @ 15V, 150A | 820nC | 115ns/570ns | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH90N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgh90n60b3-datasheets-0893.pdf | TO-247-3 | 3 | 24 Weeks | 6.500007g | yes | LOW CONDUCTION LOSS | 660W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 660W | TO-247AD | 600V | 72 ns | 1.8V | 75A | 473 ns | 480V, 60A, 2 Ω, 15V | 20V | 5V | 1.8V @ 15V, 90A | PT | 172nC | 500A | 31ns/150ns | 1.32mJ (on), 1.37mJ (off) | 250ns | |||||||||||||||||||||||||||||||||
| IXGK35N120BD1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2002 | /files/ixys-ixgx35n120b-datasheets-0847.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 10.000011g | 3 | yes | unknown | 350W | NOT SPECIFIED | IXG*35N120 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 350W | 40 ns | 1.2kV | 86 ns | 1.2kV | 70A | 1200V | 660 ns | 960V, 35A, 5 Ω, 15V | 3.3V @ 15V, 35A | 170nC | 140A | 50ns/180ns | 3.8mJ (off) | |||||||||||||||||||||||||||||||||||||
| IXGR45N120 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | ISOPLUS247™ | 3 | 8 Weeks | yes | EAR99 | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE | COLLECTOR | N-CHANNEL | 1.2kV | 90A | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH120N65B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | -55°C~175°C TJ | Standard | TO-247-3 | 28 Weeks | compliant | 1360W | 28ns | 650V | 340A | 400V, 50A, 2 Ω, 15V | 1.9V @ 15V, 100A | PT | 250nC | 760A | 30ns/168ns | 1.34mJ (on), 1.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GP60B2DQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gp60b2dq2g-datasheets-0896.pdf | 600V | 150A | TO-247-3 Variant | Lead Free | 3 | 30 Weeks | 3 | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 625W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 55 ns | 600V | 150A | 200 ns | 400V, 50A, 4.3 Ω, 15V | 6V | 2.7V @ 15V, 50A | PT | 165nC | 190A | 19ns/85ns | 465μJ (on), 635μJ (off) | ||||||||||||||||||||||||||||||||||||
| APT50GT120LRDQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gt120lrdq2g-datasheets-0897.pdf | TO-264-3, TO-264AA | 3 | 31 Weeks | yes | HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | 694W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 694W | 1.2kV | 73 ns | 1.2kV | 106A | 1200V | 305 ns | 800V, 50A, 1 Ω, 15V | 3.7V @ 15V, 50A | NPT | 240nC | 150A | 23ns/215ns | 2585μJ (on), 1910μJ (off) | |||||||||||||||||||||||||||||||||||||||
| IXGK35N120B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2002 | /files/ixys-ixgx35n120b-datasheets-0847.pdf | TO-264-3, TO-264AA | 3 | 8 Weeks | 10.000011g | 3 | yes | 350W | NOT SPECIFIED | IXG*35N120 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 350W | 1.2kV | 3.3V | 86 ns | 1.2kV | 70A | 1200V | 660 ns | 960V, 35A, 5 Ω, 15V | 20V | 5V | 3.3V @ 15V, 35A | PT | 170nC | 140A | 50ns/180ns | 3.8mJ (off) | ||||||||||||||||||||||||||||||||||
| IXA30RG1200DHG-TUB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/ixys-ixa30rg1200dhgtrr-datasheets-0829.pdf | 9-SMD Module | 147W | 1200V | 43A | 600V, 25A, 39 Ω, 15V | 2.1V @ 15V, 25A | 76nC | 70ns/250ns | 2.5mJ (on), 3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH45N120 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | Standard | ROHS3 Compliant | 2001 | /files/ixys-ixgt45n120-datasheets-0684.pdf | 1.2kV | 75A | TO-247-3 | Lead Free | 3 | 8 Weeks | 6.500007g | 3 | yes | 300W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Insulated Gate BIP Transistors | Not Qualified | 28ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.2kV | 96 ns | 1.2kV | 75A | 1200V | 1400 ns | 960V, 45A, 5 Ω, 15V | 20V | 5V | 2.5V @ 15V, 45A | 170nC | 180A | 55ns/370ns | 14mJ (off) | 700ns | |||||||||||||||||||||||||||||||||
| APT102GA60L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt102ga60b2-datasheets-9184.pdf | TO-264-3, TO-264AA | 3 | 32 Weeks | 3 | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 780W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 780W | 600V | 64 ns | 2.5V | 183A | 389 ns | 400V, 62A, 4.7 Ω, 15V | 6V | 2.5V @ 15V, 62A | PT | 294nC | 307A | 28ns/212ns | 1.354mJ (on), 1.614mJ (off) | ||||||||||||||||||||||||||||||||||||||
| IXYX200N65B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | -55°C~175°C TJ | Tube | Standard | /files/ixys-ixyx200n65b3-datasheets-0869.pdf | TO-247-3 | 28 Weeks | compliant | 1560W | 108ns | 650V | 410A | 400V, 100A, 0 Ω, 15V | 1.7V @ 15V, 100A | 340nC | 1100A | 60ns/370ns | 5mJ (on), 4mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXA20RG1200DHG-TUB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/ixys-ixa20rg1200dhgtrr-datasheets-0788.pdf | 9-SMD Module | 125W | 1200V | 32A | 600V, 15A, 56 Ω, 15V | 2.1V @ 15V, 15A | PT | 48nC | 1.55mJ (on), 1.7mJ (off) |
