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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXYP30N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/ixys-ixyp30n120c3-datasheets-0575.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | Lead Free | 3 | 24 Weeks | 3 | 416W | Single | 500W | 1 | Insulated Gate BIP Transistors | 23 ns | 126 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 1.2kV | 3.7V | 71 ns | 1.2kV | 75A | 1200V | 296 ns | 600V, 30A, 10 Ω, 15V | 20V | 5V | 3.3V @ 15V, 30A | 69nC | 145A | 19ns/130ns | 2.6mJ (on), 1.1mJ (off) | |||||||||||||||||||||||||||||||||||||
| IKW60N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/infineontechnologies-ikw60n60h3fksa1-datasheets-0576.pdf | TO-247-3 | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Not Halogen Free | 416W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 416W | 143 ns | 600V | 64 ns | 600V | 80A | 314 ns | 400V, 60A, 6 Ω, 15V | 2.3V @ 15V, 60A | Trench Field Stop | 375nC | 180A | 27ns/252ns | 2.1mJ (on), 1.13mJ (off) | |||||||||||||||||||||||||||||||||||||||
| IXYH75N65C3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixyh75n65c3-datasheets-0579.pdf | TO-247-3 | 28 Weeks | 38.000013g | 750W | NOT SPECIFIED | Single | NOT SPECIFIED | 750W | 650V | 1.8V | 2.3V | 170A | 400V, 60A, 3 Ω, 15V | 2.3V @ 15V, 60A | PT | 123nC | 360A | 27ns/93ns | 2.8mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXH60N65B4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixxh60n65b4-datasheets-0580.pdf | TO-247-3 | 28 Weeks | 455W | Single | 455W | Insulated Gate BIP Transistors | N-CHANNEL | 650V | 1.7V | 2V | 116A | 400V, 60A, 5 Ω, 15V | 20V | 6.5V | 2V @ 15V, 60A | PT | 95nC | 250A | 37ns/145ns | 3.13mJ (on), 1.15mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGT32N90B2D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/ixys-ixgh32n90b2d1-datasheets-0484.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 8 Weeks | 4.500005g | yes | not_compliant | e3 | Matte Tin (Sn) | 300W | GULL WING | NOT SPECIFIED | IXG*32N90 | 4 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | 190 ns | 900V | 42 ns | 900V | 64A | 690 ns | 720V, 32A, 5 Ω, 15V | 2.7V @ 15V, 32A | 89nC | 200A | 20ns/260ns | 2.2mJ (off) | |||||||||||||||||||||||||||||||||||||
| IXYA30N120A4HV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Surface Mount | -55°C~175°C TJ | Standard | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | compliant | 500W | 42ns | 1200V | 106A | 960V, 25A, 5 Ω, 15V | 1.9V @ 15V, 25A | PT | 57nC | 184A | 15ns/235ns | 4mJ (on), 3.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKZ75N65EH5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikz75n65eh5xksa1-datasheets-0548.pdf | TO-247-4 | Lead Free | 4 | 26 Weeks | 4 | yes | e3 | Tin (Sn) | Halogen Free | 395W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 395W | 58 ns | 650V | 37 ns | 650V | 90A | 415 ns | 400V, 37.5A, 10 Ω, 15V | 2.1V @ 15V, 75A | 166nC | 300A | 26ns/347ns | 680μJ (on), 430μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| APT15GP60BDQ1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt15gp60bdq1g-datasheets-0551.pdf | 600V | 15A | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 250W | 3 | Single | 1 | R-PSFM-T3 | 8 ns | 29 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | TO-247AD | 600V | 20 ns | 600V | 56A | 160 ns | 400V, 15A, 5 Ω, 15V | 2.7V @ 15V, 15A | PT | 55nC | 65A | 8ns/29ns | 130μJ (on), 120μJ (off) | |||||||||||||||||||||||||||||||||||
| HGTG18N120BN | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2001 | /files/onsemiconductor-hgtg18n120bn-datasheets-0552.pdf | 1.2kV | 54A | TO-247-3 | Lead Free | 3 | 14 Weeks | 6.39g | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS, AVALANCHE RATED | No | 8541.29.00.95 | e3 | Tin (Sn) | 390W | Single | 390W | 1 | R-PSFM-T3 | SILICON | MOTOR CONTROL | N-CHANNEL | 1.2kV | 2.45V | 38 ns | 1.2kV | 54A | 1200V | 345 ns | 960V, 18A, 3 Ω, 15V | 2.7V @ 15V, 18A | NPT | 165nC | 165A | 23ns/170ns | 800μJ (on), 1.8mJ (off) | ||||||||||||||||||||||||||||||||||||
| IKFW50N60ETXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/infineontechnologies-ikfw50n60etxksa1-datasheets-0558.pdf | TO-247-3 | 16 Weeks | 164W | 91ns | 600V | 73A | 400V, 50A, 7 Ω, 15V | 2V @ 15V, 50A | Trench Field Stop | 290nC | 150A | 28ns/305ns | 1.5mJ (on), 1.42mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB45N60SWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-ngtb45n60swg-datasheets-0525.pdf | TO-247-3 | Lead Free | 3 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | 250W | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 250W | 376 ns | 600V | 2.4V | 90A | 400V, 45A, 10 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 45A | Trench Field Stop | 134nC | 180A | 70ns/144ns | 550μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IKW50N60TAFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ikw50n60tfksa1-datasheets-5384.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 3 | yes | AEC-Q101 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 333W | 143ns | 60 ns | 600V | 80A | 396 ns | 400V, 50A, 7 Ω, 15V | 2V @ 15V, 50A | Trench Field Stop | 310nC | 150A | 26ns/299ns | 2.6mJ | ||||||||||||||||||||||||||||||||||||||||||||
| IXGH10N170A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/ixys-ixgh10n170a-datasheets-0529.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | 3 | yes | 140W | NOT SPECIFIED | IXG*10N170 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | 46 ns | 190 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 140W | TO-247AD | 1.7kV | 107 ns | 1.7kV | 10A | 1700V | 240 ns | 850V, 10A, 22 Ω, 15V | 6V @ 15V, 5A | NPT | 29nC | 20A | 46ns/190ns | 380μJ (off) | |||||||||||||||||||||||||||||||||||||
| IRG4PF50WDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 1998 | /files/infineontechnologies-irg4pf50wd201p-datasheets-5118.pdf | 900V | 51A | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | 200W | SINGLE | Dual | 200W | 1 | Insulated Gate BIP Transistors | 71 ns | 52ns | 150 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 90 ns | 900V | 2.25V | 121 ns | 2.7V | 51A | 460 ns | 720V, 28A, 5 Ω, 15V | 20V | 6V | 2.7V @ 15V, 28A | 160nC | 204A | 71ns/150ns | 2.63mJ (on), 1.34mJ (off) | |||||||||||||||||||||||||||||
| NGTB50N65FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/onsemiconductor-ngtb50n65fl2wg-datasheets-0530.pdf | TO-247-3 | Lead Free | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | 417W | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 417W | 94 ns | 650V | 2V | 100A | 400V, 50A, 10 Ω, 15V | 20V | 6.5V | 2V @ 15V, 50A | Trench Field Stop | 220nC | 200A | 100ns/237ns | 1.5mJ (on), 460μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IGC18T120T8QX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Surface Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | Die | Lead Free | 12 Weeks | no | EAR99 | Halogen Free | NOT SPECIFIED | NOT SPECIFIED | 1.2kV | 1.2kV | 1.2kV | 1200V | 2.42V @ 15V, 15A | Trench Field Stop | 45A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC27T120T8LX1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Surface Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | Die | Lead Free | 2 | 12 Weeks | EAR99 | Halogen Free | YES | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XUUC-N2 | 1.2kV | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 1.2kV | 1.2kV | 1200V | 2.07V @ 15V, 25A | Trench Field Stop | 75A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYP24N100C4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | -55°C~175°C TJ | Standard | TO-220-3 | 24 Weeks | compliant | 375W | 35ns | 1000V | 76A | 800V, 24A, 10 Ω, 15V | 2.3V @ 15V, 24A | PT | 43nC | 132A | 15ns/147ns | 3.6mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH32N90B2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/ixys-ixgh32n90b2-datasheets-0540.pdf | TO-247-3 | 3 | 8 Weeks | 6.500007g | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 300W | NOT SPECIFIED | IXG*32N90 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | TO-247AD | 900V | 42 ns | 900V | 64A | 690 ns | 720V, 32A, 5 Ω, 15V | 2.7V @ 15V, 32A | PT | 89nC | 200A | 20ns/260ns | 2.6mJ (off) | ||||||||||||||||||||||||||||||||||||||
| IXXH40N65C4D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX4™ | Through Hole | -55°C~175°C TJ | Standard | TO-247-3 | 28 Weeks | compliant | 455W | 62ns | 650V | 110A | 400V, 40A, 5 Ω, 15V | 2.3V @ 15V, 40A | PT | 68nC | 215A | 20ns/100ns | 1.6mJ (on), 420μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH120N30B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgh120n30b3-datasheets-0541.pdf | TO-247-3 | 3 | 24 Weeks | 6.500007g | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 540W | NOT SPECIFIED | IXG*120N30 | 3 | Single | NOT SPECIFIED | 540W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 300V | 1.42V | 41 ns | 300V | 75A | 356 ns | 20V | 5V | 1.7V @ 15V, 120A | PT | 225nC | 480A | |||||||||||||||||||||||||||||||||||||
| RJH60F6DPQ-A0#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/renesaselectronicsamerica-rjh60f6dpqa0t0-datasheets-0542.pdf | TO-247-3 | 16 Weeks | 3 | yes | 297.6W | NOT SPECIFIED | RJH60F | 3 | NOT SPECIFIED | 297.6W | 90 ns | 600V | 1.35V | 1.75V | 85A | 400V, 30A, 5 Ω, 15V | 1.75V @ 15V, 45A | Trench | 58ns/131ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH64N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgh64n60a3-datasheets-0545.pdf | TO-247-3 | 3 | 30 Weeks | 3 | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 460W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 600V | 65 ns | 1.35V | 777 ns | 480V, 50A, 3 Ω, 15V | 1.35V @ 15V, 50A | PT | 167nC | 400A | 26ns/268ns | 1.42mJ (on), 3.28mJ (off) | ||||||||||||||||||||||||||||||||||||||||
| STGW80H65FB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw80h65fb-datasheets-0546.pdf | TO-247-3 | 20 Weeks | 38.000013g | 3 | EAR99 | 469W | NOT SPECIFIED | STGW80 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 469W | 650V | 1.6V | 650V | 120A | 400V, 80A, 10 Ω, 15V | 20V | 7V | 2V @ 15V, 80A | Trench Field Stop | 414nC | 240A | 84ns/280ns | 2.1mJ (on), 1.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH64N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgh64n60b3-datasheets-0522.pdf | TO-247-3 | 3 | 24 Weeks | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 460W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 64 ns | 1.8V | 326 ns | 480V, 50A, 3 Ω, 15V | 20V | 5V | 1.8V @ 15V, 50A | PT | 168nC | 400A | 25ns/138ns | 1.5mJ (on), 1mJ (off) | 150ns | |||||||||||||||||||||||||||||||||||||
| IXGP20N120B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixgp20n120bd1-datasheets-0378.pdf | TO-220-3 | 3 | 8 Weeks | 2.299997g | yes | e3 | Matte Tin (Sn) | 190W | NOT SPECIFIED | IXG*20N120 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | TO-220AB | 1.2kV | 35 ns | 1.2kV | 40A | 1200V | 790 ns | 960V, 20A, 10 Ω, 15V | 3.4V @ 15V, 20A | 72nC | 100A | 25ns/150ns | 2.1mJ (off) | |||||||||||||||||||||||||||||||||||||||
| NGTD28T65F2SWK | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-ngtd28t65f2wp-datasheets-0307.pdf | Die | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 650V | 2V @ 15V, 75A | Trench Field Stop | 200A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH56N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh56n60a3-datasheets-0524.pdf | TO-247-3 | 3 | 30 Weeks | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 330W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 330W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 600V | 66 ns | 1.35V | 150A | 910 ns | 480V, 44A, 5 Ω, 15V | 20V | 5V | 1.35V @ 15V, 44A | PT | 140nC | 370A | 26ns/310ns | 1mJ (on), 3.75mJ (off) | 550ns | ||||||||||||||||||||||||||||||||||
| IXDH20N120D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixdh20n120-datasheets-0440.pdf | TO-3P-3 Full Pack | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 20 Weeks | 6.500007g | 3 | yes | LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES | 200W | NOT SPECIFIED | IXD*20N120 | 3 | Single | NOT SPECIFIED | 200W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-247AD | 40ns | 1.2kV | 2.4V | 175 ns | 1.2kV | 38A | 1200V | 570 ns | 600V, 20A, 82 Ω, 15V | 20V | 6.5V | 3V @ 15V, 20A | NPT | 70nC | 50A | 3.1mJ (on), 2.4mJ (off) | |||||||||||||||||||||||||||||||
| LGD8209TI | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant |
