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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| IKY40N120CH3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | /files/infineontechnologies-iky40n120ch3xksa1-datasheets-6333.pdf | TO-247-4 | 4 | 16 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 500W | 350ns | 61 ns | 1200V | 80A | 439 ns | 600V, 40A, 12 Ω, 15V | 2.35V @ 15V, 40A | 190nC | 160A | 30ns/280ns | 2.18mJ (on), 1.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| IKQ75N120CS6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | /files/infineontechnologies-ikq75n120cs6xksa1-datasheets-6407.pdf | TO-247-3 | 16 Weeks | 880W | 440ns | 1200V | 150A | 600V, 75A, 4 Ω, 15V | 2.15V @ 15V, 75A | Trench Field Stop | 530nC | 300A | 34ns/300ns | 5.15mJ (on), 2.95mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HGTG40N60A4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/onsemiconductor-hgtg40n60a4-datasheets-9174.pdf | 600V | 40A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 44 Weeks | 6.39g | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 625W | Single | 625W | 1 | 25 ns | 18ns | 145 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 75A | 600V | 1.7V | 47 ns | 600V | 75A | 240 ns | 390V, 40A, 2.2 Ω, 15V | 2.7V @ 15V, 40A | 350nC | 300A | 25ns/145ns | 400μJ (on), 370μJ (off) | ||||||||||||||||||||||||||||||
| AOK50B65M2 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 500W | TO-247 | 500W | 327 ns | 650V | 2.2V | 100A | 650V | 100A | 400V, 50A, 6Ohm, 15V | 2.2V @ 15V, 50A | 102nC | 150A | 46ns/182ns | 2.09mJ (on), 1.03mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFGHL50T65SQDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~175°C TJ | Not Applicable | Standard | ROHS3 Compliant | /files/onsemiconductor-afghl50t65sqdc-datasheets-6348.pdf | TO-247-3 Variant | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | 238W | 650V | 100A | 400V, 12.5A, 4.7 Ω, 15V | 2.1V @ 15V, 50A | Field Stop | 94nC | 200A | 17.6ns/94.4ns | 131μJ (on), 96μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGH60N60SMD-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | TO-247-3 | 3 | 5 Weeks | yes | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 600W | 600W | TO-247AB | 42ns | 66 ns | 60ns | 600V | 120A | 139 ns | 400V, 60A, 3 Ω, 15V | 20V | 6V | 2.5V @ 15V, 60A | Field Stop | 280nC | 180A | 22ns/116ns | 1.59mJ (on), 390μJ (off) | 20ns | ||||||||||||||||||||||||||||||||||||
| IXYX40N450HV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | Non-RoHS Compliant | 2014 | /files/ixys-ixyx40n450hv-datasheets-6359.pdf | TO-247-3 Variant | 24 Weeks | 660W | 4500V | 95A | 960V, 40A, 2 Ω, 15V | 3.9V @ 15V, 40A | 170nC | 350A | 36ns/110ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGWA30HP65FB2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HB2 | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa30hp65fb2-datasheets-6361.pdf | TO-247-3 | 167W | 140ns | 650V | 50A | 400V, 30A, 6.8 Ω, 15V | 2.1V @ 15V, 30A | Trench Field Stop | 90nC | 90A | -/71ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGD3HF60HDT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgd3hf60hdt4-datasheets-6363.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 260.39037mg | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - annealed | 38W | GULL WING | 260 | STGD3 | 3 | Single | 30 | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 38W | 600V | 85 ns | 600V | 2.95V | 600V | 7.5A | 400V, 1.5A, 100 Ω, 15V | 20V | 5.75V | 2.95V @ 15V, 1.5A | 12nC | 18A | 11ns/60ns | 19μJ (on), 12μJ (off) | ||||||||||||||||||||||||||||||||
| FGY60T120SQDN | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | Standard | /files/onsemiconductor-fgy60t120sqdn-datasheets-6368.pdf | TO-247-3 | 5 Weeks | yes | compliant | 517W | 1200V | 120A | 600V, 60A, 10 Ω, 15V | 1.95V @ 15V, 60A | 311nC | 240A | 52ns/296ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HGTG40N60B3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-hgtg40n60b3-datasheets-9188.pdf | 600V | 70A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 44 Weeks | 6.39g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 290W | Single | 290W | 1 | 47 ns | 170 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 600V | 1.4V | 82 ns | 600V | 70A | 385 ns | 480V, 40A, 3 Ω, 15V | 2V @ 15V, 40A | 250nC | 330A | 47ns/170ns | 1.05mJ (on), 800μJ (off) | |||||||||||||||||||||||||||||||
| AIKQ100N60CTXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-aikq100n60ctxksa1-datasheets-6379.pdf | TO-247-3 | 39 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 714W | 600V | 160A | 400V, 100A, 3.6 Ω, 15V | 2V @ 15V, 100A | Trench Field Stop | 610nC | 400A | 30ns/290ns | 3.1mJ (on), 2.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGPF15N60UNDF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgpf15n60undf-datasheets-6382.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 2.74mm | 3 | 13 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 2 hours ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 42W | Single | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | MOTOR CONTROL | N-CHANNEL | 42W | TO-220AB | 82.4 ns | 600V | 2.2V | 18.8 ns | 600V | 30A | 69.8 ns | 400V, 15A, 10 Ω, 15V | 20V | 8.5V | 2.7V @ 15V, 15A | NPT | 43nC | 45A | 9.3ns/54.8ns | 370μJ (on), 67μJ (off) | 12.8ns | |||||||||||||||||||||||||||||||
| RGS00TS65HRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | RoHS Compliant | /files/rohmsemiconductor-rgs00ts65hrc11-datasheets-6266.pdf | TO-247-3 | 3 | 8 Weeks | not_compliant | AEC-Q101 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 326W | 70 ns | 650V | 88A | 292 ns | 400V, 50A, 10 Ω, 15V | 2.1V @ 15V, 50A | Trench Field Stop | 58nC | 150A | 36ns/115ns | 1.46mJ (on), 1.29mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| FGH50N6S2D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2002 | /files/onsemiconductor-fgh50n6s2d-datasheets-6318.pdf | 600V | 75A | TO-247-3 | Lead Free | 3 | 4 Weeks | 6.39g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 5 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 463W | Single | 463W | 1 | 15ns | SILICON | POWER CONTROL | N-CHANNEL | 55ns | 600V | 1.9V | 28 ns | 600V | 75A | 180 ns | 390V, 30A, 3 Ω, 15V | 2.7V @ 15V, 30A | 70nC | 240A | 13ns/55ns | 260μJ (on), 250μJ (off) | ||||||||||||||||||||||||||||||||||||
| AIKW40N65DF5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Trenchstop™ 5 | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/infineontechnologies-aikw40n65df5xksa1-datasheets-6268.pdf | TO-247-3 | 39 Weeks | NOT SPECIFIED | NOT SPECIFIED | 250W | 650V | 74A | 400V, 20A, 15 Ω, 15V | 2.1V @ 15V, 40A | Trench | 95nC | 120A | 19ns/165ns | 350μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75GN120LG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt75gn120lg-datasheets-6327.pdf | 1.2kV | 200A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 24 Weeks | 10.6g | yes | EAR99 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 833W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 60 ns | 620 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 200A | 1.2kV | 1.7V | 101 ns | 1.2kV | 200A | 1200V | 925 ns | 800V, 75A, 1 Ω, 15V | 30V | 6.5V | 2.1V @ 15V, 75A | Trench Field Stop | 425nC | 225A | 60ns/620ns | 8620μJ (on), 11400μJ (off) | ||||||||||||||||||||||||||||
| AIKW75N60CTXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-aikw75n60ctxksa1-datasheets-6271.pdf | TO-247-3 | 39 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 428W | 600V | 80A | 400V, 75A, 5 Ω, 15V | 2V @ 15V, 75A | Trench Field Stop | 470nC | 225A | 33ns/330ns | 2mJ (on), 2.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKQ40N120CT2XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-ikq40n120ct2xksa1-datasheets-6329.pdf | TO-247-3 | 3 | 16 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 500W | 74 ns | 1200V | 80A | 530 ns | 600V, 40A, 12 Ω, 15V | 2.15V @ 15V, 40A | Trench Field Stop | 190nC | 160A | 32ns/328ns | 3.1mJ (on), 2.9mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| FGH60N60SFDTU-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/onsemiconductor-fgh60n60sfdtuf085-datasheets-6274.pdf | TO-247-3 | 5 Weeks | 6.39g | 3 | yes | not_compliant | e3 | Tin (Sn) | 378W | NOT SPECIFIED | Single | NOT SPECIFIED | 378W | 55 ns | 600V | 2.9V | 120A | 400V, 60A, 5 Ω, 15V | 2.9V @ 15V, 60A | Field Stop | 188nC | 180A | 26ns/134ns | 1.97mJ (on), 570μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| RGS50TSX2DHRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | /files/rohmsemiconductor-rgs50tsx2dhrc11-datasheets-6283.pdf | TO-247-3 | 8 Weeks | 395W | 182ns | 1200V | 50A | 600V, 25A, 10 Ω, 15V | 2.1V @ 15V, 25A | Trench Field Stop | 67nC | 75A | 37ns/140ns | 1.4mJ (on), 1.65mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGWA40H120DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40h120df2-datasheets-5378.pdf | TO-247-3 | Lead Free | 32 Weeks | 3 | EAR99 | 468W | STGWA40 | Single | 468W | 488 ns | 1.2kV | 2.6V | 80A | 1200V | 600V, 40A, 10 Ω, 15V | 2.6V @ 15V, 40A | Trench Field Stop | 158nC | 160A | 18ns/152ns | 1mJ (on), 1.32mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGTV00TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgtv00ts65dgc11-datasheets-6287.pdf | TO-247-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 276W | 102ns | 62 ns | 650V | 95A | 247 ns | 400V, 50A, 10 Ω, 15V | 1.9V @ 15V, 50A | Trench Field Stop | 104nC | 200A | 41ns/142ns | 1.17mJ (on), 940μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IKQ40N120CH3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-ikq40n120ch3xksa1-datasheets-6290.pdf | TO-247-3 | 3 | 16 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 500W | 76 ns | 1200V | 80A | 444 ns | 400V, 40A, 12 Ω, 15V | 2.35V @ 15V, 40A | 190nC | 160A | 30ns/300ns | 3.3mJ (on), 1.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| IXYH80N90C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyh80n90c3-datasheets-6292.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 830W | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 830W | TO-247AD | 900V | 134 ns | 2.7V | 165A | 201 ns | 450V, 80A, 2 Ω, 15V | 20V | 5.5V | 2.7V @ 15V, 80A | 145nC | 360A | 34ns/90ns | 4.3mJ (on), 1.9mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| STGW40NC60KD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40nc60kd-datasheets-6294.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | 250W | STGW40 | 3 | Single | 250W | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 46 ns | 164 ns | SILICON | POWER CONTROL | N-CHANNEL | 45 ns | 600V | 64 ns | 600V | 70A | 338 ns | 480V, 30A, 10 Ω, 15V | 20V | 6.5V | 2.7V @ 15V, 30A | 135nC | 220A | 46ns/164ns | 595μJ (on), 716μJ (off) | |||||||||||||||||||||||||||||||||||||
| RGS80TSX2HRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | /files/rohmsemiconductor-rgs80tsx2hrc11-datasheets-6300.pdf | TO-247-3 | 8 Weeks | 555W | 1200V | 80A | 600V, 40A, 10 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 104nC | 120A | 49ns/199ns | 3mJ (on), 3.1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGY75T95SQDT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Not Applicable | Standard | Non-RoHS Compliant | /files/onsemiconductor-fgy75t95sqdt-datasheets-6302.pdf | TO-247-3 Variant | 8 Weeks | yes | 434W | 259ns | 950V | 150A | 600V, 75A, 4.7 Ω, 15V | 2.11V @ 15V, 75A | Trench Field Stop | 137nC | 300A | 28.8ns/117ns | 8.8mJ (on), 3.2mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW40H120F2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40h120f2-datasheets-6305.pdf | TO-247-3 | 32 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 468W | STGW40 | Single | 468W | 1.2kV | 2.1V | 1.2kV | 80A | 1200V | 600V, 40A, 10 Ω, 15V | 2.6V @ 15V, 40A | Trench Field Stop | 158nC | 160A | 18ns/152ns | 1mJ (on), 1.32mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKY50N120CH3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-iky50n120ch3xksa1-datasheets-6308.pdf | TO-247-4 | 4 | 14 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 652W | 255ns | 62 ns | 1200V | 100A | 462 ns | 600V, 50A, 10 Ω, 15V | 2.35V @ 15V, 50A | 235nC | 200A | 32ns/296ns | 2.3mJ (on), 1.9mJ (off) |
