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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| RGS80TSX2HRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | /files/rohmsemiconductor-rgs80tsx2hrc11-datasheets-6300.pdf | TO-247-3 | 8 Weeks | 555W | 1200V | 80A | 600V, 40A, 10 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 104nC | 120A | 49ns/199ns | 3mJ (on), 3.1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGY75T95SQDT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Not Applicable | Standard | Non-RoHS Compliant | /files/onsemiconductor-fgy75t95sqdt-datasheets-6302.pdf | TO-247-3 Variant | 8 Weeks | yes | 434W | 259ns | 950V | 150A | 600V, 75A, 4.7 Ω, 15V | 2.11V @ 15V, 75A | Trench Field Stop | 137nC | 300A | 28.8ns/117ns | 8.8mJ (on), 3.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGTVX6TS65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgtvx6ts65gc11-datasheets-6245.pdf | TO-247-3 | 3 | 17 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 404W | 83 ns | 650V | 144A | 298 ns | 400V, 80A, 10 Ω, 15V | 1.9V @ 15V, 80A | Trench Field Stop | 171nC | 320A | 45ns/201ns | 2.65mJ (on), 1.8mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| RGW80TK65DGVC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw80tk65dgvc11-datasheets-6174.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 81W | 92ns | 59 ns | 650V | 39A | 228 ns | 400V, 40A, 10 Ω, 15V | 1.9V @ 15V, 40A | Trench Field Stop | 110nC | 160A | 44ns/143ns | 760μJ (on), 720μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| FGH75T65SQDTL4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | Standard | RoHS Compliant | TO-247-4 | 4 Weeks | 6.289g | ACTIVE (Last Updated: 6 days ago) | yes | NOT SPECIFIED | NOT SPECIFIED | 76ns | 650V | 150A | 400V, 18.8A, 15 Ω, 15V | 2.1V @ 15V, 75A | Trench Field Stop | 128nC | 300A | 44ns/276ns | 307μJ (on), 266μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FGH60N60UFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | Lead Free | 3 | 5 Weeks | 6.39g | No SVHC | 3 | yes | EAR99 | No | 8541.29.00.95 | 298W | FGH60N60 | Single | 1 | Insulated Gate BIP Transistors | 23 ns | 130 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AB | 47ns | 600V | 600V | 83 ns | 600V | 60A | 120A | 204 ns | 400V, 60A, 5 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 60A | Field Stop | 188nC | 180A | 23ns/130ns | 1.81mJ (on), 810μJ (off) | 80ns | |||||||||||||||||||||||
| FGH75T65SHDTLN4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | /files/onsemiconductor-fgh75t65shdtln4-datasheets-6260.pdf | TO-247-4 | 4 Weeks | yes | 48CTQ060 | 455W | 36ns | 650V | 150A | 400V, 75A, 15 Ω, 15V | 2.1V @ 15V, 75A | Trench Field Stop | 126nC | 300A | 55ns/189ns | 1.06mJ (on), 1.56mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGTV60TK65DGVC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgtv60tk65dgvc11-datasheets-6182.pdf | TO-3PFM, SC-93-3 | 17 Weeks | NOT SPECIFIED | NOT SPECIFIED | 76W | 95ns | 650V | 33A | 400V, 30A, 10 Ω, 15V | 1.9V @ 15V, 30A | Trench Field Stop | 64nC | 120A | 33ns/105ns | 570μJ (on), 500μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKFW50N60DH3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/infineontechnologies-ikfw50n60dh3xksa1-datasheets-6264.pdf | TO-247-3 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 145W | 64ns | 600V | 53A | 400V, 40A, 8 Ω, 15V | 2.3V @ 15V, 40A | Trench Field Stop | 210nC | 160A | 25ns/212ns | 1.22mJ (on), 610μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AIGW50N65F5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Trenchstop™ 5 | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/infineontechnologies-aigw50n65f5xksa1-datasheets-6185.pdf | TO-247-3 | 39 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 270W | 650V | 400V, 25A, 12 Ω, 15V | 2.1V @ 15V, 50A | Trench | 1018nC | 150A | 21ns/156ns | 490μJ (on), 140μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW40V60DLF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40v60dlf-datasheets-6187.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 20 Weeks | 3 | EAR99 | No | 283W | STGW40 | Single | 283W | Insulated Gate BIP Transistors | N-CHANNEL | 600V | 2.35V | 600V | 80A | 400V, 40A, 10 Ω, 15V | 20V | 2.3V @ 15V, 40A | Trench Field Stop | 226nC | 160A | -/208ns | 411μJ (off) | |||||||||||||||||||||||||||||||||||||||||
| FGH60N60SFTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | 3 | 4 Weeks | 6.39g | No SVHC | 3 | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 378W | FGH60N60 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 378W | TO-247AB | 600V | 600V | 66 ns | 600V | 120A | 187 ns | 400V, 60A, 5 Ω, 15V | 20V | 6.5V | 2.9V @ 15V, 60A | Field Stop | 198nC | 180A | 22ns/134ns | 1.79mJ (on), 670μJ (off) | 62ns | |||||||||||||||||||||||||
| IGW40N65F5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igp40n65f5xksa1-datasheets-5647.pdf | TO-247-3 | Lead Free | 26 Weeks | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | 255W | NOT SPECIFIED | Single | NOT SPECIFIED | 255W | Insulated Gate BIP Transistors | N-CHANNEL | 650V | 1.6V | 1.6V | 74A | 400V, 20A, 15 Ω, 15V | 20V | 4.8V | 2.1V @ 15V, 40A | 95nC | 120A | 19ns/160ns | 360μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||||||||||
| STGW25H120DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw25h120df2-datasheets-6215.pdf | TO-247-3 | 32 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | 375W | STGW25 | Single | 375W | 303 ns | 1.2kV | 2.1V | 1.2kV | 50A | 1200V | 600V, 25A, 10 Ω, 15V | 2.6V @ 15V, 25A | Trench Field Stop | 100nC | 100A | 29ns/130ns | 600μJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| FGA30N60LSDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | 3 | 7 Weeks | 6.401g | 3 | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 480W | Single | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | 480W | 35 ns | 600V | 62 ns | 600V | 60A | 2870 ns | 400V, 30A, 6.8 Ω, 15V | 20V | 7V | 1.4V @ 15V, 30A | Trench Field Stop | 225nC | 90A | 18ns/250ns | 1.1mJ (on), 21mJ (off) | 2000ns | |||||||||||||||||||||||||||||
| FGH40T120SMD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgh40t120smdf155-datasheets-5349.pdf | TO-247-3 | 15.87mm | 24.75mm | 4.82mm | 4 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 555W | NOT SPECIFIED | Single | NOT SPECIFIED | 555W | Insulated Gate BIP Transistors | 175°C | 40 ns | 475 ns | N-CHANNEL | 80A | 65 ns | 1.2kV | 1.8V | 1.2kV | 80A | 1200V | 600V, 40A, 10 Ω, 15V | 25V | 7.5V | 2.4V @ 15V, 40A | Trench Field Stop | 370nC | 160A | 40ns/475ns | 2.7mJ (on), 1.1mJ (off) | ||||||||||||||||||||||||||
| AIKW30N60CTXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-aikw30n60ctxksa1-datasheets-6232.pdf | TO-247-3 | 39 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 187W | 600V | 60A | 400V, 30A, 10.6 Ω, 15V | 2.05V @ 15V, 30A | Trench Field Stop | 167nC | 90A | 23ns/254ns | 690μJ (on), 770μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IKZ75N65ES5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Through Hole | -40°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-ikz75n65es5xksa1-datasheets-6235.pdf | TO-247-4 | 4 | 16 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 395W | 72ns | 70 ns | 650V | 80A | 475 ns | 400V, 15A, 22.3 Ω, 15V | 1.75V @ 15V, 75A | Trench | 164nC | 300A | 46ns/405ns | 1.3mJ (on), 1.5mJ (off) | ||||||||||||||||||||||||||||||||||||
| AIKW40N65DH5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Trenchstop™ 5 | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/infineontechnologies-aikw40n65dh5xksa1-datasheets-6238.pdf | TO-247-3 | 39 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 250W | 650V | 74A | 400V, 20A, 15 Ω, 15V | 2.1V @ 15V, 40A | Trench | 95nC | 120A | 19ns/165ns | 350μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RGTVX6TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgtvx6ts65dgc11-datasheets-6240.pdf | TO-247-3 | 3 | 17 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 404W | 109ns | 83 ns | 650V | 144A | 298 ns | 400V, 80A, 10 Ω, 15V | 1.9V @ 15V, 80A | Trench Field Stop | 171nC | 320A | 45ns/201ns | 2.65mJ (on), 1.8mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| AIKW50N65DH5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Trenchstop™ 5 | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/infineontechnologies-aikw50n65dh5xksa1-datasheets-6242.pdf | TO-247-3 | 39 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 270W | 650V | 400V, 25A, 12 Ω, 15V | 2.1V @ 15V, 50A | Trench | 1018nC | 150A | 21ns/156ns | 490μJ (on), 140μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGW00TK65GVC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw00tk65gvc11-datasheets-6105.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | POWER CONTROL | N-CHANNEL | 89W | 72 ns | 650V | 45A | 273 ns | 400V, 50A, 10 Ω, 15V | 1.9V @ 15V, 50A | Trench Field Stop | 141nC | 200A | 52ns/180ns | 1.18mJ (on), 960μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| RGW60TK65DGVC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw60tk65dgvc11-datasheets-6171.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 72W | 92ns | 50 ns | 650V | 33A | 209 ns | 400V, 30A, 10 Ω, 15V | 1.9V @ 15V, 30A | Trench Field Stop | 84nC | 120A | 37ns/114ns | 480μJ (on), 490μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| FGHL50T65SQ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | /files/onsemiconductor-fghl50t65sq-datasheets-6108.pdf | TO-247-3 | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | 268W | 650V | 100A | 400V, 25A, 4.7 Ω, 15V | 2.1V @ 15V, 50A | 99nC | 200A | 19ns/93ns | 410μJ (on), 88μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGH40N60SMD-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fgh40n60smdf085-datasheets-6112.pdf | TO-247-3 | 3 | 6 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 349W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 349W | TO-247AB | 47 ns | 600V | 2.1V | 43.7 ns | 600V | 80A | 172.5 ns | 400V, 40A, 6 Ω, 15V | 20V | 6V | 2.5V @ 15V, 40A | Field Stop | 180nC | 120A | 18ns/110ns | 920μJ (on), 300μJ (off) | 81ns | ||||||||||||||||||||||||||
| STGW30NC60VD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw30nc60vd-datasheets-6121.pdf | TO-247-3 | 16.02mm | 21.07mm | 5.15mm | 3 | 8 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 250W | STGW30 | 3 | Single | 250W | 1 | Insulated Gate BIP Transistors | 11ns | SILICON | POWER CONTROL | N-CHANNEL | 44ns | 600V | 2.5V | 42.5 ns | 600V | 80A | 280 ns | 390V, 20A, 3.3 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 20A | 100nC | 150A | 31ns/100ns | 220μJ (on), 330μJ (off) | ||||||||||||||||||||||||||||||
| AIGW40N65H5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Trenchstop™ 5 | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/infineontechnologies-aigw40n65h5xksa1-datasheets-6125.pdf | TO-247-3 | 39 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 250W | 650V | 74A | 400V, 20A, 15 Ω, 15V | 2.1V @ 15V, 40A | Trench | 95nC | 120A | 19ns/165ns | 350μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RGS80TS65HRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | /files/rohmsemiconductor-rgs80ts65hrc11-datasheets-6128.pdf | TO-247-3 | 8 Weeks | 272W | 650V | 73A | 400V, 40A, 10 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 48nC | 120A | 37ns/112ns | 1.05mJ (on), 1.03mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGTH00TK65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgth00tk65dgc11-datasheets-6130.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 72W | 225ns | 102 ns | 650V | 35A | 221 ns | 400V, 50A, 10 Ω, 15V | 2.1V @ 15V, 50A | Trench Field Stop | 94nC | 200A | 39ns/143ns | |||||||||||||||||||||||||||||||||||||||||||
| RGS60TS65DHRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | RoHS Compliant | /files/rohmsemiconductor-rgs60ts65dhrc11-datasheets-6132.pdf | TO-247-3 | 8 Weeks | NOT SPECIFIED | NOT SPECIFIED | 223W | 103ns | 650V | 56A | 400V, 30A, 10 Ω, 15V | 2.1V @ 15V, 30A | Trench Field Stop | 36nC | 90A | 28ns/104ns | 660μJ (on), 810μJ (off) |
