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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Switching Frequency | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| IKFW50N60DH3EXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/infineontechnologies-ikfw50n60dh3exksa1-datasheets-5967.pdf | TO-247-3 | 16 Weeks | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 130W | 64ns | 600V | 40A | 400V, 40A, 8 Ω, 15V | 2.7V @ 15V, 40A | Trench Field Stop | 160nC | 120A | 21ns/174ns | 1.28mJ (on), 560μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA50N100BNTDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fga50n100bntdtu-datasheets-5969.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 3 | 5 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 156W | Single | 156W | 1 | Insulated Gate BIP Transistors | SILICON | AUTOMOTIVE IGNITION | N-CHANNEL | 1.5μs | 1kV | 2.5V | 460 ns | 1kV | 50A | 1000V | 760 ns | 25V | 7V | 2.9V @ 15V, 60A | NPT and Trench | 275nC | 100A | 250ns | |||||||||||||||||||||||||||||||||||||
| IKB40N65EF5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/infineontechnologies-ikb40n65ef5atma1-datasheets-5843.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 26 Weeks | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | 83ns | 57 ns | 650V | 74A | 199 ns | 400V, 40A, 15 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 95nC | 160A | 22ns/160ns | 420μJ (on), 100μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| FGA40T65SHD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fga40t65shd-datasheets-5990.pdf | TO-3P-3, SC-65-3 | 8 Weeks | 6.401g | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 268W | NOT SPECIFIED | NOT SPECIFIED | 268W | 31.8 ns | 650V | 2.14V | 2.1V | 80A | 400V, 40A, 6 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 72.2nC | 120A | 19.2ns/65.6ns | 1.01mJ (on), 297μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| HGTG20N60B3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/onsemiconductor-hgtg20n60b3-datasheets-8993.pdf | 600V | 40A | TO-247-3 | Lead Free | 3 | 44 Weeks | 6.39g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | NPN | 165W | HGTG20N60 | Single | 165W | 1 | 25 ns | 220 ns | SILICON | COLLECTOR | POWER CONTROL | 600V | 1.8V | 45 ns | 600V | 40A | 360 ns | 480V, 20A, 10 Ω, 15V | 2V @ 15V, 20A | 80nC | 160A | 475μJ (on), 1.05mJ (off) | ||||||||||||||||||||||||||||||||||||
| FGH40T70SHD-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/onsemiconductor-fgh40t70shdf155-datasheets-6005.pdf | TO-247-3 | 4 Weeks | 6.39g | ACTIVE (Last Updated: 1 week ago) | yes | NOT SPECIFIED | NOT SPECIFIED | 268W | 37ns | 700V | 80A | 400V, 40A, 6 Ω, 15V | 2.15V @ 15V, 40A | Trench Field Stop | 69nC | 120A | 22ns/66ns | 1.15mJ (on), 271μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB15N120IHRWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-ngtb15n120ihrwg-datasheets-5912.pdf | TO-247-3 | Lead Free | 4 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 333W | 3 | Single | 333W | 1.2kV | 2.5V | 30A | 1200V | 600V, 15A, 10 Ω, 15V | 2.5V @ 15V, 15A | Trench Field Stop | 160nC | 60A | -/170ns | 340μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AFGHL40T65SPD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | Standard | Non-RoHS Compliant | /files/onsemiconductor-afghl40t65spd-datasheets-6011.pdf | TO-247-3 | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | 267W | 35ns | 650V | 80A | 400V, 40A, 6 Ω, 15V | 2.4V @ 15V, 40A | Trench Field Stop | 36nC | 120A | 18ns/35ns | 1.16MJ (on), 270μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGH40T65UQDF-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Not Applicable | Standard | RoHS Compliant | 2014 | /files/onsemiconductor-fgh40t65uqdff155-datasheets-5917.pdf | TO-247-3 | 13 Weeks | 6.39g | ACTIVE (Last Updated: 4 days ago) | yes | 231W | 89ns | 650V | 80A | 400V, 40A, 6 Ω, 15V | 1.67V @ 15V, 40A | Trench Field Stop | 306nC | 120A | 32ns/271ns | 989μJ (on), 310μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGWA40H65DFB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HB | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa40h65dfb-datasheets-6014.pdf | TO-247-3 | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STGWA40 | NOT SPECIFIED | 283W | 62ns | 650V | 80A | 400V, 40A, 5 Ω, 15V | 2V @ 15V, 40A | Trench Field Stop | 210nC | 160A | 40ns/142ns | 498μJ (on), 363μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IHW15N120R3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ihw15n120r3fksa1-datasheets-5921.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 254W | 1200V | 30A | 460 ns | 600V, 15A, 14.6 Ω, 15V | 1.7V @ 15V, 15A | Trench | 165nC | 45A | -/300ns | 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| FGH80N60FDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | Lead Free | 3 | 4 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 290W | Single | 1 | Insulated Gate BIP Transistors | 21 ns | 126 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 290W | TO-247AB | 36 ns | 600V | 600V | 74 ns | 600V | 80A | 201 ns | 400V, 40A, 10 Ω, 15V | 20V | 7V | 2.4V @ 15V, 40A | Field Stop | 120nC | 160A | 21ns/126ns | 1mJ (on), 520μJ (off) | 100ns | ||||||||||||||||||||||||||||||
| STGW40H60DLFB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40h60dlfb-datasheets-5932.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 20 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 283W | NOT SPECIFIED | STGW40 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 283W | 600V | 1.6V | 600V | 80A | 400V, 40A, 10 Ω, 15V | 20V | 2V @ 15V, 40A | Trench Field Stop | 210nC | 160A | -/142ns | 363μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| FGH50T65UPD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgh50t65upd-datasheets-5935.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 50 Weeks | 6.39g | 3 | ACTIVE, NOT REC (Last Updated: 5 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 340W | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 340W | TO-247AB | 53 ns | 650V | 2.1V | 101 ns | 650V | 100A | 77ns | 185 ns | 400V, 50A, 6 Ω, 15V | 25V | 7.5V | 2.3V @ 15V, 50A | Trench Field Stop | 230nC | 150A | 32ns/160ns | 2.7mJ (on), 740μJ (off) | 29ns | |||||||||||||||||||||||||||||||
| FGH15T120SMD-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | TO-247-3 | 6 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | No | 333W | Single | 333W | Insulated Gate BIP Transistors | N-CHANNEL | 72ns | 1.2kV | 1.9V | 1.2kV | 30A | 1200V | 600V, 15A, 34 Ω, 15V | 25V | 7.5V | 2.4V @ 15V, 15A | Trench Field Stop | 128nC | 60A | 32ns/490ns | 1.15mJ (on), 460μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| IKP28N65ES5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Through Hole | -40°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | /files/infineontechnologies-ikp28n65es5xksa1-datasheets-5872.pdf | TO-220-3 | 16 Weeks | 130W | 73ns | 650V | 38A | 400V, 28A, 34 Ω, 15V | 1.9V @ 15V, 28A | Trench Field Stop | 50nC | 90A | 27ns/184ns | 530μJ (on), 400μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGD5NB120SZ-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgd5nb120sz1-datasheets-5875.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 8 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | 75W | 260 | STGD5 | 3 | Single | 30 | 1 | Insulated Gate BIP Transistors | 690 ns | 12.1 μs | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 75W | 1.2kV | 1.2kV | 850 ns | 1.2kV | 10A | 1200V | 14100 ns | 960V, 5A, 1k Ω, 15V | 20V | 5V | 2V @ 15V, 5A | 690ns/12.1μs | 2.59mJ (on), 9mJ (off) | |||||||||||||||||||||||||||||||||||||
| APT65GP60B2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt65gp60b2g-datasheets-5879.pdf | 600V | 100A | TO-247-3 Variant | Lead Free | 3 | 3 | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 833W | 3 | Single | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 84 ns | 600V | 100A | 219 ns | 400V, 65A, 5 Ω, 15V | 2.7V @ 15V, 65A | PT | 210nC | 250A | 30ns/91ns | 605μJ (on), 896μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| APT27GA90BD15 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt27ga90bd15-datasheets-5881.pdf | TO-247-3 | 3 | 33 Weeks | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 223W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 223W | TO-247AD | 900V | 18 ns | 900V | 48A | 281 ns | 600V, 14A, 10 Ω, 15V | 3.1V @ 15V, 14A | PT | 62nC | 79A | 9ns/98ns | 413μJ (on), 287μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| STGWA40H65DFB2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ROHS3 Compliant | /files/stmicroelectronics-stgwa40h65dfb2-datasheets-5884.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGB50N65H5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igb50n65h5atma1-datasheets-5803.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | EAR99 | 270W | 650V | 80A | 400V, 50A, 12 Ω, 15V | 2.1V @ 15V, 50A | Trench Field Stop | 120nC | 150A | 23ns/173ns | 1.59mJ (on), 750μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW30V60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw30v60df-datasheets-5894.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 3 | 20 Weeks | 3 | EAR99 | No | 258W | STGW30 | Single | 258W | 1 | SILICON | POWER CONTROL | N-CHANNEL | 53 ns | 600V | 2.35V | 59 ns | 600V | 60A | 225 ns | 400V, 30A, 10 Ω, 15V | 2.3V @ 15V, 30A | Trench Field Stop | 163nC | 120A | 45ns/189ns | 383μJ (on), 233μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IKZ75N65EL5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Surface Mount | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ikz75n65el5xksa1-datasheets-5794.pdf | TO-247-4 | Lead Free | 4 | 16 Weeks | yes | e3 | Tin (Sn) | Halogen Free | 536W | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 50Hz | 536W | 59 ns | 650V | 133 ns | 650V | 100A | 474 ns | 400V, 75A, 23 Ω, 15V | 1.35V @ 15V, 75A | 436nC | 300A | 120ns/275ns | 1.57mJ (on), 3.2mJ (off) | ||||||||||||||||||||||||||||||||||||||||
| HGTP12N60C3D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-hgtp12n60c3d-datasheets-5898.pdf | 600V | 24A | TO-220-3 | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | NPN | 104W | HGTP12N60 | Single | 104W | 1 | 28 μs | 270 ns | SILICON | COLLECTOR | MOTOR CONTROL | TO-220AB | 40 ns | 600V | 1.65V | 48 ns | 600V | 24A | 480 ns | 2.2V @ 15V, 15A | 48nC | 96A | 380μJ (on), 900μJ (off) | |||||||||||||||||||||||||||||||||||
| IKFW40N60DH3EXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/infineontechnologies-ikfw40n60dh3exksa1-datasheets-5798.pdf | TO-247-3 | 26 Weeks | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 111W | 72ns | 600V | 34A | 400V, 30A, 10 Ω, 15V | 2.7V @ 15V, 30A | Trench Field Stop | 107nC | 90A | 18ns/144ns | 870μJ (on), 360μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA40N65SMD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/onsemiconductor-fga40n65smd-datasheets-5905.pdf | TO-3P-3, SC-65-3 | 16.2mm | 20.1mm | 5mm | Lead Free | 3 | 6 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | Tin | No | 8541.29.00.95 | e3 | 349W | Single | 349W | 1 | Insulated Gate BIP Transistors | 12 ns | 92 ns | SILICON | POWER CONTROL | N-CHANNEL | 42 ns | 650V | 2.5V | 650V | 80A | 28ns | 400V, 40A, 6 Ω, 15V | 20V | 6V | 2.5V @ 15V, 40A | Field Stop | 119nC | 120A | 12ns/92ns | 820μJ (on), 260μJ (off) | 17ns | ||||||||||||||||||||||||||||||||
| STGW30NC120HD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 1.2kV | 30A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 8 Weeks | 38.000013g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | 220W | STGW30 | 3 | Single | 220W | 1 | Insulated Gate BIP Transistors | 29 ns | 11ns | 275 ns | SILICON | POWER CONTROL | N-CHANNEL | 30A | 152ns | 1.2kV | 2.75V | 41 ns | 1.2kV | 60A | 1200V | 928 ns | 960V, 20A, 10 Ω, 15V | 25V | 5.75V | 2.75V @ 15V, 20A | 110nC | 29ns/275ns | 1.66mJ (on), 4.44mJ (off) | ||||||||||||||||||||||||||||||
| STGP35HF60W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp35hf60w-datasheets-5818.pdf | TO-220-3 | Lead Free | 8 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 200W | STGP35 | Single | 200W | Insulated Gate BIP Transistors | N-CHANNEL | 600V | 1.65V | 600V | 60A | 400V, 20A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 20A | 140nC | 150A | 30ns/175ns | 290μJ (on), 185μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGH60N60UFDTU-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fgh60n60ufdtuf085-datasheets-5827.pdf | TO-247-3 | 4 Weeks | 6.39g | 3 | yes | not_compliant | e3 | Tin (Sn) | 298W | NOT SPECIFIED | Single | NOT SPECIFIED | 298W | 76 ns | 600V | 2.9V | 120A | 400V, 60A, 5 Ω, 15V | 2.9V @ 15V, 60A | Field Stop | 192nC | 180A | 29ns/138ns | 2.47mJ (on), 810μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STGWA40HP65FB2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HB2 | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa40hp65fb2-datasheets-5840.pdf | TO-247-3 | 30 Weeks | NOT SPECIFIED | NOT SPECIFIED | 227W | 140ns | 650V | 72A | 400V, 40A, 4.7 Ω, 15V | 2V @ 15V, 40A | Trench Field Stop | 153nC | 120A | -/125ns | 410μJ (off) |
