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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Continuous Collector Current | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| GPA042A100L-ND | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/semiq-gpa042a100lnd-datasheets-2064.pdf | TO-264-3, TO-264AA | TO-264 | 463W | 465ns | 1000V | 60A | 600V, 60A, 50Ohm, 15V | 2.9V @ 15V, 60A | NPT and Trench | 405nC | 120A | 230ns/1480ns | 13.1mJ (on), 6.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA20S125P-SN00336 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fga20s125p-datasheets-9567.pdf | TO-3P-3, SC-65-3 | 4 Weeks | 6.401g | ACTIVE (Last Updated: 6 days ago) | yes | 250W | Insulated Gate BIP Transistors | N-CHANNEL | 250W | 1.25kV | 2.5V | 40A | 1250V | 600V, 20A, 10 Ω, 15V | 25V | 7.5V | 2.5V @ 15V, 20A | Trench | 153nC | 60A | 10ns/400ns | 740μJ (on), 500μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP12N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixga12n100-datasheets-5418.pdf | TO-220-3 | 3 | yes | HIGH SPEED | 100W | SINGLE | NOT SPECIFIED | IXG*12N100 | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 100W | TO-220AB | 1kV | 100 ns | 3.5V | 24A | 1000V | 900 ns | 800V, 12A, 120 Ω, 15V | 20V | 5V | 3.5V @ 15V, 12A | 65nC | 48A | 100ns/850ns | 2.5mJ (off) | 700ns | |||||||||||||||||||||||||||||||||||||||||
| IGW40N60TPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | 2016 | /files/infineontechnologies-igw40n60tpxksa1-datasheets-2034.pdf | TO-247-3 | 3 | 14 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 246W | 49 ns | 600V | 67A | 320 ns | 400V, 40A, 10.1 Ω, 15V | 1.8V @ 15V, 40A | Trench Field Stop | 177nC | 120A | 18ns/222ns | 1.06mJ (on), 610μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXGA48N60C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixga48n60c3-datasheets-2037.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | 1.59999g | 3 | yes | not_compliant | e3 | Matte Tin (Sn) | 300W | GULL WING | NOT SPECIFIED | IXG*48N60 | 4 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | 600V | 45 ns | 600V | 75A | 187 ns | 400V, 30A, 3 Ω, 15V | 20V | 5.5V | 2.5V @ 15V, 30A | PT | 77nC | 250A | 19ns/60ns | 410μJ (on), 230μJ (off) | ||||||||||||||||||||||||||||||||||||
| STGW20IH125DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwt20ih125df-datasheets-1506.pdf | TO-247-3 | 3 | 32 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 259W | NOT SPECIFIED | STGW20 | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 259W | 1.25kV | 2.55V | 1.25kV | 40A | 1250V | 285 ns | 600V, 15A, 10 Ω, 15V | 2.5V @ 15V, 15A | Trench Field Stop | 68nC | 80A | -/106ns | 410μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| AOK75B65H1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 18 Weeks | 556W | 295ns | 650V | 150A | 400V, 75A, 4 Ω, 15V | 2.4V @ 15V, 75A | 109nC | 225A | 47ns/175ns | 3.77mJ (on), 2.04mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT30J121(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2006 | TO-3P-3, SC-65-3 | Lead Free | 3 | No | 170W | Single | 600V | 600V | 30A | 300V, 30A, 24 Ω, 15V | 2.45V @ 15V, 30A | 60A | 90ns/300ns | 1mJ (on), 800μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGL60N100BNTDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-fgl60n100bntdtu-datasheets-2044.pdf | 1kV | 60A | TO-264-3, TO-264AA | 20mm | 26mm | 5mm | Lead Free | 3 | 10 Weeks | 6.756g | 3 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 180W | Single | 180W | 1 | SILICON | POWER CONTROL | N-CHANNEL | 1.2 μs | 1kV | 1.5V | 460 ns | 1kV | 60A | 1000V | 760 ns | 600V, 60A, 51 Ω, 15V | 2.9V @ 15V, 60A | NPT and Trench | 275nC | 120A | 140ns/630ns | |||||||||||||||||||||||||||||||||||||||
| IXGP42N30C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgh42n30c3-datasheets-1783.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | 223W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 300V | 43 ns | 1.85V | 42A | 229 ns | 200V, 21A, 10 Ω, 15V | 20V | 5V | 1.85V @ 15V, 42A | PT | 76nC | 250A | 21ns/113ns | 120μJ (on), 150μJ (off) | 120ns | |||||||||||||||||||||||||||||||||||||||
| FGH40T65SHD-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/onsemiconductor-fgh40t65shdf155-datasheets-2051.pdf | TO-247-3 | 3 | 7 Weeks | 6.39g | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | 268W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 268W | TO-247AB | 31.8 ns | 650V | 2.1V | 80A | 400V, 40A, 6 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 72.2nC | 120A | 19.2ns/65.6ns | 1.01mJ (on), 297μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| AIGB50N65H5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Standard | /files/infineontechnologies-tle9012aquxuma1-datasheets-7439.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 39 Weeks | 650V | 50A | NPT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK60B65H1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 18 Weeks | 500W | 288ns | 650V | 120A | 400V, 60A, 5 Ω, 15V | 2.35V @ 15V, 60A | 90nC | 180A | 39ns/153ns | 2.42mJ (on), 1.17mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IHW30N135R5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/infineontechnologies-ihw30n135r5xksa1-datasheets-2015.pdf | TO-247-3 | 16 Weeks | 330W | 1350V | 60A | 600V, 30A, 10 Ω, 15V | 1.95V @ 15V, 30A | Trench Field Stop | 235nC | 90A | -/310ns | 1.4mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGQ170N30PB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/ixys-ixgq170n30pb-datasheets-2016.pdf | TO-3P-3, SC-65-3 | 3 | 5.500006g | yes | EAR99 | e3 | Matte Tin (Sn) | 330W | SINGLE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 330W | 300V | 103 ns | 1.7V | 170A | 259 ns | 1.7V @ 15V, 85A | 143nC | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP4N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixgp4n100-datasheets-2017.pdf | TO-220-3 | 3 | 2.299997g | yes | e3 | Matte Tin (Sn) | 40W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | POWER CONTROL | N-CHANNEL | 40W | TO-220AB | 1kV | 45 ns | 2.7V | 8A | 1000V | 1220 ns | 800V, 4A, 120 Ω, 15V | 2.7V @ 15V, 4A | 13.6nC | 16A | 20ns/390ns | 900μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| FGM623S | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/sanken-fgm623s-datasheets-2018.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 36 Weeks | yes | 60W | SINGLE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 60W | 600V | 180 ns | 1.7V | 30A | 420 ns | 300V, 30A, 39 Ω, 15V | 1.7V @ 15V, 30A | 65nC | 100A | 100ns/300ns | |||||||||||||||||||||||||||||||||||||||||||||||||
| HGTG7N60A4D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-hgtg7n60a4d-datasheets-2021.pdf | 600V | 34A | TO-247-3 | Lead Free | 3 | 44 Weeks | 6.39g | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 125W | Single | 125W | 1 | 11ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 22 ns | 600V | 1.9V | 17 ns | 600V | 34A | 205 ns | 390V, 7A, 25 Ω, 15V | 2.7V @ 15V, 7A | 37nC | 56A | 11ns/100ns | 55μJ (on), 60μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IKW30N65WR5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/infineontechnologies-ikw30n65wr5xksa1-datasheets-2027.pdf | TO-247-3 | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 185W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 185W | 95 ns | 650V | 49 ns | 650V | 60A | 429 ns | 400V, 15A, 26 Ω, 15V | 1.8V @ 15V, 30A | Trench | 155nC | 90A | 39ns/367ns | 990μJ (on), 330μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| MGD623S | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/sanken-mgd623s-datasheets-2030.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 12 Weeks | yes | unknown | 150W | SINGLE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 150W | 300 ns | 600V | 175 ns | 2.4V | 50A | 420 ns | 300V, 50A, 39 Ω, 15V | 2.4V @ 15V, 50A | 100A | 75ns/300ns | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP30N60B2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixgp30n60b2-datasheets-2033.pdf | TO-220-3 | 3 | 8 Weeks | 2.299997g | yes | e3 | Matte Tin (Sn) | 190W | NOT SPECIFIED | IXG*30N60 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | TO-220AB | 600V | 1.8V | 30 ns | 600V | 70A | 350 ns | 400V, 24A, 5 Ω, 15V | 1.8V @ 15V, 24A | 66nC | 150A | 13ns/110ns | 320μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| STGW40NC60WD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40nc60wd-datasheets-1957.pdf | 600V | 40A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 38.000013g | No SVHC | 3 | yes | EAR99 | No | e3 | Tin (Sn) | 250W | STGW40 | 3 | Single | 250W | 1 | Insulated Gate BIP Transistors | 2.9nF | 33 ns | 12ns | 168 ns | 40A | SILICON | POWER CONTROL | N-CHANNEL | 650V | 40A | TO-247AC | 45 ns | 600V | 2.1V | 46 ns | 600V | 70A | 280 ns | 390V, 30A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 30A | 126nC | 230A | 33ns/168ns | 302μJ (on), 349μJ (off) | ||||||||||||||||||||||||||||
| STGP15M120F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Standard | /files/stmicroelectronics-stgp15m120f3-datasheets-2005.pdf | TO-220-3 | 30 Weeks | compliant | 259W | 1200V | 30A | 600V, 15A, 22 Ω, 15V | 2.3V @ 15V, 15A | Trench Field Stop | 53nC | 60A | 26ns/122ns | 550μJ (on), 850μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AIKB40N65DF5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Standard | /files/infineontechnologies-tle9012aquxuma1-datasheets-7439.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 39 Weeks | 650V | 40A | NPT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP70N33TBM-A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2001 | TO-220-3 | 2.299997g | 330V | 330V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGTH40TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rgth40ts65dgc11-datasheets-1960.pdf | TO-247-3 | 3 | 17 Weeks | 38.000013g | Unknown | 3 | yes | EAR99 | 144W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 20A | 144W | 58 ns | 650V | 1.6V | 47 ns | 650V | 40A | 141 ns | 400V, 20A, 10 Ω, 15V | 2.1V @ 15V, 20A | Trench Field Stop | 40nC | 80A | 22ns/73ns | ||||||||||||||||||||||||||||||||||||||||||||||
| IXYH20N65C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/ixys-ixya20n65c3-datasheets-1861.pdf | TO-247-3 | 28 Weeks | 230W | 230W | 650V | 2.5V | 50A | 400V, 20A, 20 Ω, 15V | 2.5V @ 15V, 20A | PT | 30nC | 105A | 19ns/80ns | 430μJ (on), 350μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGA12N120A3-TRL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Standard | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 100W | 1200V | 22A | 960V, 12A, 10 Ω, 15V | 3V @ 15V, 12A | PT | 20.4nC | 60A | 35ns/62ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP2N100A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixgp2n100-datasheets-1862.pdf | TO-220-3 | 3 | 6 Weeks | 2.299997g | yes | 8541.29.00.95 | e3 | Matte Tin (Sn) | 25W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 25W | TO-220AB | 1kV | 100 ns | 1kV | 4A | 1000V | 100 ns | 800V, 2A, 150 Ω, 15V | 20V | 8V | 3.5V @ 15V, 2A | 7.8nC | 8A | 15ns/300ns | 260μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| NGTG15N120FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-ngtg15n120fl2wg-datasheets-1972.pdf | TO-247-3 | 4 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | Insulated Gate BIP Transistors | N-CHANNEL | 294W | 294W | 1200V | 30A | 600V, 15A, 10 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 15A | Trench Field Stop | 109nC | 60A | 64ns/128ns | 1.2mJ (on), 370μJ (off) |
