Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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AOK30B60D | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 3 | 278W | Insulated Gate BIP Transistors | N-CHANNEL | 278W | 137 ns | 600V | 2.1V | 60A | 400V, 30A, 10 Ω, 15V | 20V | 2.1V @ 15V, 30A | 47nC | 128A | 26ns/71ns | 1.18mJ (on), 200μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGP30N60C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgp30n60c3-datasheets-1839.pdf | TO-220-3 | Lead Free | 3 | 20 Weeks | 2.299997g | 3 | yes | e3 | Matte Tin (Sn) | 220W | NOT SPECIFIED | IXG*30N60 | 3 | Single | NOT SPECIFIED | 220W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 2.6V | 45 ns | 600V | 60A | 160 ns | 300V, 20A, 5 Ω, 15V | 20V | 5.5V | 3V @ 15V, 20A | PT | 38nC | 150A | 16ns/42ns | 270μJ (on), 90μJ (off) | ||||||||||||||||||||||||||||||
IXGP12N120A2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixga12n120a2-datasheets-1598.pdf | TO-220-3 | 3 | 16 Weeks | 2.299997g | 3 | yes | 75W | NOT SPECIFIED | IXG*12N120 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 75W | TO-220AB | 1.2kV | 45 ns | 1.2kV | 24A | 1200V | 1750 ns | 960V, 12A, 100 Ω, 15V | 3V @ 15V, 12A | PT | 24nC | 48A | 15ns/680ns | 5.4mJ (off) | |||||||||||||||||||||||||||||||||||||
NGB8206ANTF4G | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | Logic | ROHS3 Compliant | 2012 | /files/littelfuseinc-ngb8206ansl3g-datasheets-1317.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | EAR99 | unknown | NOT SPECIFIED | NGB8206 | NOT SPECIFIED | 150W | 390V | 20A | 300V, 9A, 1k Ω, 5V | 1.9V @ 4.5V, 20A | 50A | -/5μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIKB30N65DF5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-aikb30n65df5atma1-datasheets-1877.pdf | 39 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FGA30T65SHD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fga30t65shd-datasheets-1843.pdf | TO-3P-3, SC-65-3 | 5 Weeks | 6.401g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 238W | NOT SPECIFIED | NOT SPECIFIED | 238W | 31.8 ns | 650V | 2.14V | 2.1V | 60A | 400V, 30A, 6 Ω, 15V | 2.1V @ 15V, 30A | Trench Field Stop | 54.7nC | 90A | 14.4ns/52.8ns | 598μJ (on), 167μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
AOK10B60D | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 3 | 163W | Insulated Gate BIP Transistors | N-CHANNEL | 163W | 105 ns | 600V | 1.8V | 20A | 400V, 10A, 30 Ω, 15V | 20V | 1.8V @ 15V, 10A | 17.4nC | 40A | 10ns/72ns | 260μJ (on), 70μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
MGD623N | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/sanken-mgd623n-datasheets-1849.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 12 Weeks | yes | 150W | SINGLE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 150W | 300 ns | 600V | 175 ns | 2.3V | 50A | 500 ns | 300V, 50A, 39 Ω, 15V | 2.3V @ 15V, 50A | 100A | 75ns/300ns | ||||||||||||||||||||||||||||||||||||||||||
IXYP15N65C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixyp15n65c3-datasheets-1886.pdf | TO-220-3 | 24 Weeks | 200W | 200W | 650V | 2.5V | 38A | 400V, 15A, 20 Ω, 15V | 2.5V @ 15V, 15A | PT | 19nC | 80A | 15ns/68ns | 270μJ (on), 230μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIKB15N65DF5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Standard | /files/infineontechnologies-tle9012aquxuma1-datasheets-7439.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 39 Weeks | 650V | 15A | NPT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXA20I1200PZ-TUB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Surface Mount | Standard | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | 165W | 1200V | 38A | 600V, 15A, 56 Ω, 15V | 2.1V @ 15V, 15A | PT | 47nC | 48ns/230ns | 1.6mJ (on), 1.7mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FGA40T65UQDF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fga40t65uqdf-datasheets-1853.pdf | TO-3P-3, SC-65-3 | 14 Weeks | 6.401g | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | 231W | NOT SPECIFIED | NOT SPECIFIED | 231W | 89 ns | 650V | 1.67V | 80A | 400V, 40A, 6 Ω, 15V | 1.67V @ 15V, 40A | NPT | 306nC | 120A | 32ns/271ns | 989μJ (on), 310μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
STGP8M120DF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Standard | /files/stmicroelectronics-stgp8m120df3-datasheets-1858.pdf | TO-220-3 | 30 Weeks | compliant | 103ns | 1200V | 16A | 600V, 8A, 33 Ω, 15V | 2.3V @ 15V, 8A | Trench Field Stop | 32nC | 32A | 20ns/126ns | 390μJ (on), 370μJ (Off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STGWT20H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwt20h60df-datasheets-1859.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 32 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 167W | STGWT20 | Single | 167W | 90ns | 600V | 2V | 600V | 40A | 400V, 20A, 10 Ω, 15V | 2V @ 15V, 20A | Trench Field Stop | 115nC | 80A | 42.5ns/177ns | 209μJ (on), 261μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
IXYA20N65C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Surface Mount | -55°C~175°C TJ | Standard | 2015 | /files/ixys-ixya20n65c3-datasheets-1861.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | compliant | 230W | 34ns | 650V | 20A | 400V, 20A, 20 Ω, 15V | 2.5V @ 15V, 20A | 30nC | 105A | 19ns/80ns | 430μJ (on), 650μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGP2N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixgp2n100-datasheets-1862.pdf | TO-220-3 | 3 | 6 Weeks | 2.299997g | yes | 8541.29.00.95 | e3 | Matte Tin (Sn) | 25W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 25W | TO-220AB | 1kV | 100 ns | 1kV | 4A | 1000V | 100 ns | 800V, 2A, 150 Ω, 15V | 20V | 8V | 2.7V @ 15V, 2A | 7.8nC | 8A | 15ns/300ns | 560μJ (off) | |||||||||||||||||||||||||||||||||
IRG4BC15UD-LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2001 | /files/infineontechnologies-irg4bc15udstrlp-datasheets-5240.pdf | 600V | 14A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.826mm | Lead Free | 3 | 13 Weeks | 2.084002g | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 49W | 260 | Single | 30 | 49W | 1 | Insulated Gate BIP Transistors | 17 ns | 20ns | 160 ns | SILICON | POWER CONTROL | N-CHANNEL | 28 ns | 600V | 2.02V | 37 ns | 2.4V | 14A | 400 ns | 480V, 7.8A, 75 Ω, 15V | 20V | 6V | 2.4V @ 15V, 7.8A | 23nC | 42A | 17ns/160ns | 240μJ (on), 260μJ (off) | ||||||||||||||||||||||||||
IXXP12N65B4D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX4™ | Through Hole | -55°C~175°C TJ | Tube | Standard | 2017 | /files/ixys-ixxp12n65b4d1-datasheets-1871.pdf | TO-220-3 | 24 Weeks | compliant | 160W | 43ns | 650V | 38A | 400V, 12A, 20 Ω, 15V | 1.95V @ 15V, 12A | 34nC | 70A | 13ns/158ns | 440μJ (on), 220μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIKP20N60CTAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/infineontechnologies-aikp20n60ctaksa1-datasheets-1872.pdf | TO-220-3 | 39 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 156W | 600V | 40A | 400V, 20A, 12 Ω, 15V | 2.05V @ 15V, 20A | Trench Field Stop | 120nC | 60A | 18ns/199ns | 310μJ (on), 460μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GPA030A135MN-FDR | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/semiq-gpa030a135mnfdr-datasheets-1874.pdf | TO-3 | TO-3PN | 329W | 450ns | 1350V | 60A | 600V, 30A, 5Ohm, 15V | 2.4V @ 15V, 30A | Trench Field Stop | 300nC | 90A | 30ns/145ns | 4.4mJ (on), 1.18mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGP12N120A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/ixys-ixgp12n120a3-datasheets-1875.pdf | TO-220-3 | 3 | 30 Weeks | LOW CONDUCTION LOSS | unknown | 100W | SINGLE | 3 | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 100W | TO-220AB | 1.2kV | 202 ns | 3V | 22A | 1200V | 1545 ns | 20V | 5V | 3V @ 15V, 12A | PT | 20.4nC | 60A | |||||||||||||||||||||||||||||||||||||||
IXYY8N90C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixyy8n90c3-datasheets-1778.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | 3.949996g | AVALANCHE RATED | 125W | GULL WING | 4 | Single | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 125W | TO-252AA | 900V | 2.5V | 39 ns | 2.5V | 20A | 238 ns | 450V, 8A, 30 Ω, 15V | 20V | 6V | 2.5V @ 15V, 8A | 13.3nC | 48A | 16ns/40ns | 460μJ (on), 180μJ (off) | |||||||||||||||||||||||||||||||||||||
IRG7PK42UD1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGH42N30C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/ixys-ixgh42n30c3-datasheets-1783.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 30 Weeks | 6.500007g | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 223W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 223W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 300V | 1.54V | 43 ns | 300V | 42A | 229 ns | 200V, 21A, 10 Ω, 15V | 20V | 5V | 1.85V @ 15V, 42A | PT | 76nC | 250A | 21ns/113ns | 120μJ (on), 150μJ (off) | 120ns | |||||||||||||||||||||||||||
IKB30N65ES5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/infineontechnologies-ikb30n65es5atma1-datasheets-1791.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | 188W | 75ns | 650V | 62A | 400V, 30A, 13 Ω, 15V | 1.7V @ 15V, 30A | Trench Field Stop | 70nC | 120A | 17ns/124ns | 560μJ (on), 320μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NGTD21T65F2WP | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Bulk | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-ngtd21t65f2swk-datasheets-1720.pdf | Die | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 650V | 1.9V @ 15V, 45A | Trench Field Stop | 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYA20N65B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Surface Mount | -55°C~175°C TJ | Standard | 2015 | /files/ixys-ixya20n65b3-datasheets-1796.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | compliant | 230W | 25ns | 650V | 58A | 400V, 20A, 20 Ω, 15V | 2.1V @ 15V, 20A | 29nC | 108A | 12ns/103ns | 500μJ (on), 700μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGA7N60B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2002 | /files/ixys-ixgp7n60b-datasheets-4963.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | 1.59999g | 3 | yes | unknown | 54W | GULL WING | NOT SPECIFIED | IXG*7N60 | 4 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 54W | 600V | 2V | 25 ns | 600V | 14A | 450 ns | 480V, 7A, 22 Ω, 15V | 20V | 5.5V | 2V @ 15V, 7A | PT | 25nC | 30A | 9ns/100ns | 70μJ (on), 300μJ (off) | |||||||||||||||||||||||||||||||
IXYP8N90C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | Standard | ROHS3 Compliant | 2013 | TO-220-3 | 10.66mm | 16mm | 4.83mm | Lead Free | 3 | 24 Weeks | 3 | AVALANCHE RATED | 125W | 3 | Single | 125W | 1 | Insulated Gate BIP Transistors | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 900V | 2.15V | 39 ns | 900V | 20A | 238 ns | 450V, 8A, 30 Ω, 15V | 20V | 6V | 2.5V @ 15V, 8A | 13.3nC | 48A | 16ns/40ns | 460μJ (on), 180μJ (off) | ||||||||||||||||||||||||||||||||||||
FGH40T65SH-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/onsemiconductor-fgh40t65shf155-datasheets-1798.pdf | TO-247-3 | Lead Free | 6 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | 268W | Single | 268W | 650V | 2.1V | 80A | 400V, 40A, 6 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 72.2nC | 120A | 19.2ns/65.6ns | 1.01mJ (on), 297μJ (off) |
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