Products
Manufacturer
RFQ
NEWS
ContactSingle IGBTs(3888)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FGA30N65SMD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/onsemiconductor-fga30n65smd-datasheets-1825.pdf | TO-3P-3, SC-65-3 | 16.2mm | 20.1mm | 5mm | 3 | 5 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 300W | Single | 300W | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | 35ns | 650V | 2.29V | 41 ns | 650V | 60A | 125 ns | 400V, 30A, 6 Ω, 15V | 20V | 6V | 2.5V @ 15V, 30A | Field Stop | 87nC | 90A | 14ns/102ns | 716μJ (on), 208μJ (off) | ||||||||||||||||||||||||||||||||
| FGA6530WDF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/onsemiconductor-fga6530wdf-datasheets-1765.pdf | TO-3P-3, SC-65-3 | 6 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 176W | NOT SPECIFIED | Single | NOT SPECIFIED | 176W | 81 ns | 650V | 2.2V | 60A | 400V, 30A, 6 Ω, 15V | 2.2V @ 15V, 30A | Trench Field Stop | 37.4nC | 90A | 12ns/42.4ns | 960μJ (on), 162μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| FGH20N60SFDTU-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | TO-247-3 | 12 Weeks | 6.39g | yes | 165W | 165W | 40 ns | 600V | 2.8V | 40A | 400V, 20A, 10 Ω, 15V | 2.8V @ 15V, 20A | Field Stop | 66nC | 60A | 13ns/90ns | 430μJ (on), 130μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYY8N90C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixyy8n90c3-datasheets-1778.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | 3.949996g | AVALANCHE RATED | 125W | GULL WING | 4 | Single | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 125W | TO-252AA | 900V | 2.5V | 39 ns | 2.5V | 20A | 238 ns | 450V, 8A, 30 Ω, 15V | 20V | 6V | 2.5V @ 15V, 8A | 13.3nC | 48A | 16ns/40ns | 460μJ (on), 180μJ (off) | ||||||||||||||||||||||||||||||||||||||
| IRG7PK42UD1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH42N30C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/ixys-ixgh42n30c3-datasheets-1783.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 30 Weeks | 6.500007g | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 223W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 223W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 300V | 1.54V | 43 ns | 300V | 42A | 229 ns | 200V, 21A, 10 Ω, 15V | 20V | 5V | 1.85V @ 15V, 42A | PT | 76nC | 250A | 21ns/113ns | 120μJ (on), 150μJ (off) | 120ns | ||||||||||||||||||||||||||||
| IKB30N65ES5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/infineontechnologies-ikb30n65es5atma1-datasheets-1791.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | 188W | 75ns | 650V | 62A | 400V, 30A, 13 Ω, 15V | 1.7V @ 15V, 30A | Trench Field Stop | 70nC | 120A | 17ns/124ns | 560μJ (on), 320μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTD21T65F2WP | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Bulk | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-ngtd21t65f2swk-datasheets-1720.pdf | Die | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 650V | 1.9V @ 15V, 45A | Trench Field Stop | 200A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYA20N65B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Surface Mount | -55°C~175°C TJ | Standard | 2015 | /files/ixys-ixya20n65b3-datasheets-1796.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | compliant | 230W | 25ns | 650V | 58A | 400V, 20A, 20 Ω, 15V | 2.1V @ 15V, 20A | 29nC | 108A | 12ns/103ns | 500μJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGA7N60B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2002 | /files/ixys-ixgp7n60b-datasheets-4963.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | 1.59999g | 3 | yes | unknown | 54W | GULL WING | NOT SPECIFIED | IXG*7N60 | 4 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 54W | 600V | 2V | 25 ns | 600V | 14A | 450 ns | 480V, 7A, 22 Ω, 15V | 20V | 5.5V | 2V @ 15V, 7A | PT | 25nC | 30A | 9ns/100ns | 70μJ (on), 300μJ (off) | ||||||||||||||||||||||||||||||||
| AOK30B60D1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 25.4mm | 18 Weeks | 208W | 208W | Insulated Gate BIP Transistors | 150°C | 21 ns | 70 ns | N-CHANNEL | 60A | 120 ns | 600V | 1.85V | 600V | 60A | 400V, 30A, 10 Ω, 15V | 20V | 2.4V @ 15V, 26A | 34nC | 96A | 20ns/58ns | 1.1mJ (on), 240μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BH20K-STRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4bh20kstrlp-datasheets-1741.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | 3 | EAR99 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 60W | GULL WING | 260 | Single | 30 | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 60W | 1.2kV | 51 ns | 4.3V | 11A | 1200V | 720 ns | 960V, 5A, 50 Ω, 15V | 20V | 6.5V | 4.3V @ 15V, 5A | 28nC | 22A | 23ns/93ns | 450μJ (on), 440μJ (off) | 400ns | ||||||||||||||||||||||||||||||||||
| AOK20B135E1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | unknown | 250W | 250W | 1.35kV | 2.3V | 40A | 1350V | 600V, 20A, 15 Ω, 15V | 2.3V @ 15V, 20A | 58nC | 80A | -/134ns | 800μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGQ85N33PCD1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/ixys-ixgq85n33pcd1-datasheets-1699.pdf | TO-3P-3, SC-65-3 | 3 | 26 Weeks | 5.500006g | 3 | yes | e3 | Matte Tin (Sn) | 150W | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | GENERAL PURPOSE SWITCHING | N-CHANNEL | 150W | 250 ns | 330V | 115 ns | 330V | 85A | 218 ns | 3V @ 15V, 100A | 80nC | ||||||||||||||||||||||||||||||||||||||||||
| IRG4PC30SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/infineontechnologies-irg4pc30spbf-datasheets-1753.pdf | 600V | 34A | TO-247-3 | 15.875mm | 20.2946mm | 5.3086mm | Lead Free | 3 | 14 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 100W | SINGLE | Dual | 100W | 1 | Insulated Gate BIP Transistors | 19ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 600V | 1.6V | 40 ns | 1.6V | 34A | 1550 ns | 480V, 18A, 23 Ω, 15V | 20V | 6V | 1.6V @ 15V, 18A | 50nC | 68A | 22ns/540ns | 260μJ (on), 3.45mJ (off) | 590ns | ||||||||||||||||||||||||||||||
| STGWF30NC60S | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp30nc60s-datasheets-5626.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 8 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) | 79W | STGWF30 | 2 | Single | 1 | Insulated Gate BIP Transistors | 21.5 ns | 180 ns | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 79W | 600V | 1.5V | 30 ns | 600V | 35A | 555 ns | 480V, 20A, 10 Ω, 15V | 20V | 5.75V | 1.9V @ 15V, 20A | 96nC | 150A | 21.5ns/180ns | 300μJ (on), 1.28mJ (off) | |||||||||||||||||||||||||||||||||||
| NGTB10N60R2DT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/onsemiconductor-ngtb10n60r2dt4g-datasheets-1405.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 4 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | 72W | Single | 72W | 600V | 90 ns | 600V | 1.7V | 600V | 20A | 300V, 10A, 30 Ω, 15V | 2.1V @ 15V, 10A | 53nC | 40A | 48ns/120ns | 412μJ (on), 140μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| STGWA8M120DF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | M | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | RoHS Compliant | /files/stmicroelectronics-stgwa8m120df3-datasheets-1703.pdf | TO-247-3 | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | STGWA80 | 167W | 103ns | 1200V | 16A | 600V, 8A, 33 Ω, 15V | 2.3V @ 15V, 8A | Trench Field Stop | 32nC | 32A | 20ns/126ns | 390μJ (on), 370μJ (Off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGTD65T40S2PT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 22 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 230W | 60ns | 650V | 80A | 400V, 40A, 10 Ω, 15V | 2.3V @ 15V, 40A | Field Stop | 60nC | 120A | 6ns/55ns | 500μJ (on), 400μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGA48N60C3-TRL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | -55°C~150°C TJ | Standard | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 300W | 26ns | 600V | 75A | 400V, 30A, 3 Ω, 15V | 2.5V @ 15V, 30A | PT | 77nC | 250A | 19ns/60ns | 410μJ (on), 230μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYP10N65C3D1M | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | -55°C~175°C TJ | Tube | Standard | 2014 | /files/ixys-ixyp10n65c3d1m-datasheets-1705.pdf | TO-220-3 Full Pack, Isolated Tab | 24 Weeks | compliant | 53W | 26ns | 650V | 15A | 400V, 10A, 50 Ω, 15V | 2.6V @ 15V, 10A | 18nC | 50A | 20ns/77ns | 240μJ (on), 170μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK20B120E1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | unknown | 333W | 333W | 1.2kV | 2.1V | 40A | 1200V | 600V, 20A, 15 Ω, 15V | 2.1V @ 15V, 20A | 60.5nC | 80A | -/134ns | 830μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGW08T120FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw08t120fksa1-datasheets-1717.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 70W | TO-247AD | 66 ns | 1200V | 16A | 710 ns | 600V, 8A, 81 Ω, 15V | 2.2V @ 15V, 8A | NPT, Trench Field Stop | 53nC | 24A | 40ns/450ns | 1.37mJ | ||||||||||||||||||||||||||||||||||||||
| STGWT28IH125DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw28ih125df-datasheets-1691.pdf | TO-3P-3, SC-65-3 | 32 Weeks | 6.961991g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 375W | STGWT28 | Single | 375W | 1.25kV | 2.65V | 1.25kV | 60A | 1250V | 600V, 25A, 10 Ω, 15V | 2.5V @ 15V, 25A | Trench Field Stop | 114nC | 120A | -/128ns | 720μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYA15N65C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Surface Mount | -55°C~175°C TJ | Standard | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | compliant | 200W | 20ns | 650V | 38A | 400V, 15A, 20 Ω, 15V | 2.5V @ 15V, 15A | PT | 19nC | 80A | 15ns/68ns | 270μJ (on), 230μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTD21T65F2SWK | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-ngtd21t65f2swk-datasheets-1720.pdf | Die | Lead Free | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 650V | 1.9V @ 15V, 45A | Trench Field Stop | 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGF23N60UFTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-sgf23n60uftu-datasheets-1722.pdf | 600V | 12A | TO-3P-3 Full Pack | Lead Free | 3 | 8 Weeks | 6.962g | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | No | 8541.29.00.95 | e3 | Tin (Sn) | 75W | SG*23N60 | Single | 75W | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | ISOLATED | MOTOR CONTROL | N-CHANNEL | 600V | 2.1V | 55 ns | 600V | 23A | 320 ns | 300V, 12A, 23 Ω, 15V | 20V | 6.5V | 2.6V @ 15V, 12A | 92A | 17ns/60ns | 115μJ (on), 135μJ (off) | 250ns | |||||||||||||||||||||||||||||||
| NGTD20T120F2SWK | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | Not Applicable | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-ngtd20t120f2wp-datasheets-1663.pdf | Die | Lead Free | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 1200V | 2.4V @ 15V, 20A | Trench Field Stop | 100A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC30KDSTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4bc30kdstrrp-datasheets-1728.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | 3 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 100W | GULL WING | 260 | IRG4BC30KD-SPBF | Single | 30 | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 100W | 42 ns | 600V | 100 ns | 2.7V | 28A | 370 ns | 480V, 16A, 23 Ω, 15V | 20V | 6V | 2.7V @ 15V, 16A | 67nC | 56A | 60ns/160ns | 600μJ (on), 580μJ (off) | 120ns | ||||||||||||||||||||||||||||||||||
| AOK15B60D | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 3 | 167W | Insulated Gate BIP Transistors | N-CHANNEL | 167W | 196 ns | 600V | 1.8V | 30A | 400V, 15A, 20 Ω, 15V | 20V | 1.8V @ 15V, 15A | 25.4nC | 60A | 23ns/74ns | 510μJ (on), 110μJ (off) |
