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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Continuous Collector Current | Power - Max | Clamping Voltage | Max Breakdown Voltage | Max Forward Surge Current (Ifsm) | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| IRG4BC30WPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2003 | /files/infineontechnologies-irg4bc30wpbf-datasheets-2736.pdf | 600V | 23A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 16 Weeks | 6.000006g | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | 100W | SINGLE | Dual | 100W | 1 | Insulated Gate BIP Transistors | 25 ns | 17ns | 99 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 2.7V | 41 ns | 2.7V | 23A | 300 ns | 480V, 12A, 23 Ω, 15V | 20V | 6V | 2.7V @ 15V, 12A | 51nC | 92A | 25ns/99ns | 130μJ (on), 130μJ (off) | 100ns | |||||||||||||||||||||||||||||||||||
| IGP40N65H5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw40n65h5fksa1-datasheets-2932.pdf | TO-220-3 | 16 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 255W | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 255W | 650V | 1.65V | 1.65V | 74A | 400V, 20A, 15 Ω, 15V | 20V | 4.8V | 2.1V @ 15V, 40A | 95nC | 120A | 22ns/165ns | 390μJ (on), 120μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STGB20V60F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp20v60f-datasheets-2712.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | 20 Weeks | 2.000002g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 167W | NOT SPECIFIED | STGB20 | Single | NOT SPECIFIED | 167W | 600V | 600V | 1.8V | 600V | 40A | 400V, 20A, 15V | 2.2V @ 15V, 20A | Trench Field Stop | 116nC | 80A | 38ns/149ns | 200μJ (on), 130μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGP10NC60S | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgd10nc60st4-datasheets-1063.pdf | TO-220-3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 62.5W | STGP10 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | MOTOR CONTROL | N-CHANNEL | 62.5W | TO-220AB | 600V | 22.5 ns | 600V | 21A | 560 ns | 390V, 5A, 10 Ω, 15V | 20V | 5.75V | 1.65V @ 15V, 5A | 18nC | 25A | 19ns/160ns | 60μJ (on), 340μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| STGFW40H65FB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa40h65fb-datasheets-0486.pdf | TO-3P-3 Full Pack | 32 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | 62.5W | STGFW40 | Single | TO-3PF-3 | 62.5W | 650V | 2V | 80A | 650V | 80A | 400V, 40A, 5Ohm, 15V | 2V @ 15V, 40A | Trench Field Stop | 210nC | 160A | 40ns/142ns | 498μJ (on), 363μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20KD-SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4bc20kdstrrp-datasheets-1646.pdf | 600V | 16A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.83mm | 4.826mm | Lead Free | 2 | 18 Weeks | 2g | No SVHC | 3 | EAR99 | ULTRA FAST SOFT RECOVERY | No | e3 | Matte Tin (Sn) | 60W | GULL WING | 260 | IRG4BC20KD-SPBF | Single | 30 | 60W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 7A | 54 ns | 37ns | 180 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 32A | 37 ns | 600V | 2.27V | 88 ns | 2.8V | 16A | 380 ns | 480V, 9A, 50 Ω, 15V | 20V | 6V | 2.8V @ 15V, 9A | 34nC | 54ns/180ns | 340μJ (on), 300μJ (off) | 110ns | ||||||||||||||||||||||||||||
| RGT40TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rgt40ts65dgc11-datasheets-2646.pdf | TO-247-3 | 3 | 17 Weeks | 38.000013g | Unknown | 3 | yes | EAR99 | 144W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 20A | 144W | 58 ns | 650V | 1.65V | 51 ns | 650V | 40A | 204 ns | 400V, 20A, 10 Ω, 15V | 2.1V @ 15V, 20A | Trench Field Stop | 40nC | 60A | 22ns/75ns | |||||||||||||||||||||||||||||||||||||||||||||||||
| NGTG20N60L2TF1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2000 | /files/onsemiconductor-ngtg20n60l2tf1g-datasheets-2658.pdf | 15.5mm | 26.5mm | 5.5mm | Lead Free | 4 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 64W | 3 | Single | 64W | 600V | 1.65V | 600V | 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJP60D0DPP-M0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjp60d0dppm0t2-datasheets-2660.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | 35W | NOT SPECIFIED | RJP60D | 3 | NOT SPECIFIED | 35W | 600V | 2.2V | 45A | 300V, 22A, 5 Ω, 15V | 2.2V @ 15V, 22A | 45nC | 35ns/90ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ISL9V5036S3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EcoSPARK® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | ROHS3 Compliant | 2017 | /files/onsemiconductor-isl9v5036s3s-datasheets-3776.pdf | 360V | 46A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 10 Weeks | 1.31247g | No SVHC | 3 | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 250W | GULL WING | ISL9V5036 | Single | 250W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 2.1μs | SILICON | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 360V | 390V | 390V | 1.17V | 2800 ns | 1.6V | 46A | 13600 ns | 300V, 1k Ω, 5V | 12V | 2.2V | 1.6V @ 4V, 10A | 32nC | -/10.8μs | ||||||||||||||||||||||||||||||||||
| RJH60D1DPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d1dpe00j3-datasheets-2686.pdf | SC-83 | Lead Free | 16 Weeks | 83 | No | 52W | RJH60D | 4 | Single | 30 ns | 42 ns | 52W | 600V | 100 ns | 600V | 600V | 20A | 300V, 10A, 5 Ω, 15V | 2.5V @ 15V, 10A | Trench | 13nC | 30ns/42ns | 100μJ (on), 130μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HGT1S10N120BNST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/onsemiconductor-hgtp10n120bn-datasheets-1511.pdf | 1.2kV | 35A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 4 Weeks | 1.31247g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 298W | GULL WING | HGT1S10N120 | Single | 298W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 55A | 1.2kV | 1.2kV | 2.7V | 32 ns | 1.2kV | 35A | 15ns | 1200V | 330 ns | 960V, 10A, 10 Ω, 15V | 20V | 2.7V @ 15V, 10A | NPT | 100nC | 80A | 23ns/165ns | 320μJ (on), 800μJ (off) | 200ns | |||||||||||||||||||||||||||||
| AOT15B60D | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-aot15b60d-datasheets-3329.pdf | TO-220-3 | 18 Weeks | 167W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 167W | 196 ns | 600V | 1.8V | 30A | 400V, 15A, 20 Ω, 15V | 20V | 1.8V @ 15V, 15A | 25.4nC | 60A | 21ns/73ns | 420μJ (on), 110μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW45HF60WD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 15.75mm | 24.45mm | 5.15mm | Lead Free | 3 | 6.500007g | 3 | EAR99 | LOW CONDUCTION LOSS | No | 250W | STGW45 | 3 | Single | 1 | Insulated Gate BIP Transistors | 30 ns | 145 ns | SILICON | POWER CONTROL | N-CHANNEL | 250W | 55 ns | 600V | 1.9V | 44 ns | 600V | 70A | 250 ns | 400V, 30A, 6.8 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 30A | 160nC | 150A | 30ns/145ns | 300μJ (on), 330μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| AOTF20B65M1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | TO-220-3 | 18 Weeks | 45W | TO-220 | 45W | 322 ns | 650V | 2.15V | 60A | 650V | 60A | 400V, 20A, 15Ohm, 15V | 2.15V @ 15V, 20A | 46nC | 60A | 26ns/122ns | 470μJ (on), 270μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGB30V60F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp30v60f-datasheets-2531.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | EAR99 | 260W | NOT SPECIFIED | STGB30 | NOT SPECIFIED | 260W | 600V | 600V | 2.3V | 60A | 400V, 30A, 10 Ω, 15V | 2.3V @ 15V, 30A | Trench Field Stop | 163nC | 120A | 45ns/189ns | 383μJ (on), 233μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGB20N45LZAG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | ROHS3 Compliant | /files/stmicroelectronics-stgd20n45lzag-datasheets-6631.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | STGB20 | 150W | 450V | 25A | 300V, 10A, 1k Ω, 5V | 1.25V @ 4V, 6A | 26nC | 50A | 1.1μs/4.6μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGW80TS65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw80ts65gc11-datasheets-2573.pdf | TO-247-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 214W | 59 ns | 650V | 78A | 232 ns | 400V, 40A, 10 Ω, 15V | 1.9V @ 15V, 40A | Trench Field Stop | 110nC | 160A | 44ns/143ns | 760μJ (on), 720μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF20B65M2 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | TO-220-3 | 18 Weeks | 45W | TO-220 | 45W | 292 ns | 650V | 2.15V | 40A | 650V | 40A | 400V, 20A, 15Ohm, 15V | 2.15V @ 15V, 20A | 46nC | 60A | 26ns/123ns | 580μJ (on), 280μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRGP4062D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirgp4062de-datasheets-2075.pdf | TO-247-3 | 3 | 16 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | 250W | TO-247AC | 89ns | 64 ns | 31ns | 600V | 48A | 164 ns | 400V, 24A, 10 Ω, 15V | 20V | 6.5V | 1.95V @ 15V, 24A | 50nC | 72A | 41ns/104ns | 115μJ (on), 600μJ (off) | 41ns | |||||||||||||||||||||||||||||||||||||||||||||||
| STGB19NC60HDT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw19nc60hd-datasheets-4405.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | 130W | GULL WING | 245 | STGB19 | 4 | Single | 30 | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 25 ns | 97 ns | SILICON | POWER CONTROL | N-CHANNEL | 130W | 600V | 31 ns | 600V | 32 ns | 600V | 40A | 272 ns | 390V, 12A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 12A | 53nC | 60A | 25ns/97ns | 85μJ (on), 189μJ (off) | |||||||||||||||||||||||||||||||||||||||
| STGF19NC60WD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf19nc60wd-datasheets-2479.pdf | TO-220-3 Full Pack | 3 | No SVHC | 3 | No | 8541.29.00.95 | 32W | STGF19 | 3 | Single | 32W | 1 | Insulated Gate BIP Transistors | 7ns | SILICON | MOTOR CONTROL | N-CHANNEL | 600V | TO-220AB | 32 ns | 600V | 2.5V | 25 ns | 600V | 14A | 127 ns | 390V, 12A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 12A | 53nC | 25ns/90ns | 81μJ (on), 125μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| STGD19N40LZ | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | Logic | ROHS3 Compliant | /files/stmicroelectronics-stgd19n40lz-datasheets-2403.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 8 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 125W | NOT SPECIFIED | STGD19 | Single | NOT SPECIFIED | 125W | 390V | 390V | 1.5V | 25A | 300V, 10A, 1k Ω, 5V | 1.5V @ 4.5V, 10A | 17nC | 40A | 650ns/13.5μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJH60A83RDPN-E0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60a83rdpne0t2-datasheets-2492.pdf | TO-220-3 | 16 Weeks | RJH60A | TO-220AB | 150 ns | 600V | 20A | 600V | 20A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTG12N60TF1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2000 | /files/onsemiconductor-ngtg12n60tf1g-datasheets-2496.pdf | Module | 15.5mm | 26.5mm | 5.5mm | Lead Free | 4 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | 54W | Single | 20A | 600V | 1.6V | 600V | 24A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB10N60FG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/onsemiconductor-ngtb10n60fg-datasheets-2505.pdf | TO-220-3 Full Pack | Lead Free | 4 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 40W | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 40W | 70 ns | 600V | 600V | 20A | 300V, 10A, 30 Ω, 15V | 20V | 6.5V | 1.7V @ 15V, 10A | 55nC | 72A | 40ns/145ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGB30H60DFB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp30h60dfb-datasheets-2125.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | EAR99 | 260W | SINGLE | GULL WING | NOT SPECIFIED | STGB30 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 260W | 600V | 53 ns | 600V | 51.1 ns | 2V | 60A | 223 ns | 400V, 30A, 10 Ω, 15V | 2V @ 15V, 30A | Trench Field Stop | 149nC | 120A | 37ns/146ns | 383μJ (on), 293μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| STGB30M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb30m65df2-datasheets-2529.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 258W | NOT SPECIFIED | STGB30 | Single | NOT SPECIFIED | 258W | 650V | 140 ns | 650V | 1.55V | 2V | 60A | 400V, 30A, 10 Ω, 15V | 2V @ 15V, 30A | Trench Field Stop | 80nC | 120A | 31.6ns/115ns | 300μJ (on), 960μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJH60A83RDPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60a83rdpe00j3-datasheets-2468.pdf | SC-83 | 16 Weeks | 83 | EAR99 | 52W | NOT SPECIFIED | RJH60A | 4 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 52W | 600V | 130 ns | 600V | 2.6V | 20A | 300V, 10A, 5 Ω, 15V | 30V | 7.5V | 2.6V @ 15V, 10A | Trench | 19.7nC | 31ns/54ns | 230μJ (on), 160μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGBL6NC60DT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgbl6nc60dt4-datasheets-3292.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | yes | No | e3 | Matte Tin (Sn) - annealed | 56W | GULL WING | STGBL6 | 4 | Single | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 6.7 ns | 67 ns | SILICON | POWER CONTROL | N-CHANNEL | 56W | 600V | 50 ns | 600V | 10.5 ns | 600V | 14A | 122 ns | 390V, 3A, 10 Ω, 15V | 20V | 5.75V | 2.9V @ 15V, 3A | 12nC | 18A | 6.7ns/46ns | 46.5μJ (on), 23.5μJ (off) |
