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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| RGTH40TK65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/rohmsemiconductor-rgth40tk65gc11-datasheets-1859.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | POWER CONTROL | N-CHANNEL | 56W | 47 ns | 650V | 23A | 141 ns | 400V, 20A, 10 Ω, 15V | 2.1V @ 15V, 20A | Trench Field Stop | 40nC | 80A | 22ns/73ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RGT30NS65DGC9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt30ns65dgc9-datasheets-1861.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 133W | 55ns | 40 ns | 650V | 30A | 204 ns | 400V, 15A, 10 Ω, 15V | 2.1V @ 15V, 15A | Trench Field Stop | 32nC | 45A | 18ns/64ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STGWA40IH65DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | IH | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | RoHS Compliant | /files/stmicroelectronics-stgwa40ih65df-datasheets-1863.pdf | TO-247-3 | 32 Weeks | compliant | NOT SPECIFIED | STGWA40 | NOT SPECIFIED | 238W | 650V | 80A | 400V, 40A, 22 Ω, 15V | 2V @ 15V, 40A | Trench Field Stop | 114nC | 120A | -/210ns | 190μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGCL80TS60GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgcl80ts60gc11-datasheets-1878.pdf | TO-247-3 | 17 Weeks | NOT SPECIFIED | NOT SPECIFIED | 148W | 600V | 65A | 400V, 40A, 10 Ω, 15V | 1.8V @ 15V, 40A | Trench Field Stop | 98nC | 160A | 53ns/227ns | 1.11mJ (on), 1.68mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IHW20N120R5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ihw20n120r5xksa1-datasheets-1880.pdf | TO-247-3 | Lead Free | 3 | 26 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 288W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | COLLECTOR | N-CHANNEL | 288W | TO-247AC | 1.2kV | 92 ns | 1.2kV | 40A | 1200V | 685 ns | 600V, 20A, 10 Ω, 15V | 1.75V @ 15V, 20A | 170nC | 60A | -/260ns | 750μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| RGTH50TK65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgth50tk65dgc11-datasheets-1889.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 59W | 58ns | 65 ns | 650V | 26A | 172 ns | 400V, 25A, 10 Ω, 15V | 2.1V @ 15V, 25A | Trench Field Stop | 49nC | 100A | 27ns/94ns | |||||||||||||||||||||||||||||||||||||||||||||||||
| RGW60TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw60ts65dgc11-datasheets-1895.pdf | TO-247-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 178W | 92ns | 50 ns | 650V | 60A | 209 ns | 400V, 30A, 10 Ω, 15V | 1.9V @ 15V, 30A | Trench Field Stop | 84nC | 120A | 37ns/114ns | 480μJ (on), 490μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYP20N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixya20n120c3hv-datasheets-0519.pdf | TO-220-3 | 10.66mm | 16mm | 4.82mm | Lead Free | 3 | 24 Weeks | 3 | AVALANCHE RATED | unknown | 278W | NOT SPECIFIED | IXY*20N120 | Single | NOT SPECIFIED | 278W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 1.2kV | 4V | 60 ns | 1.2kV | 40A | 1200V | 220 ns | 600V, 20A, 10 Ω, 15V | 20V | 5V | 3.4V @ 15V, 20A | 53nC | 96A | 20ns/90ns | 1.3mJ (on), 500μJ (off) | ||||||||||||||||||||||||||||||||||
| RGTH50TK65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/rohmsemiconductor-rgth50tk65gc11-datasheets-1900.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | POWER CONTROL | N-CHANNEL | 59W | 65 ns | 650V | 26A | 172 ns | 400V, 25A, 10 Ω, 15V | 2.1V @ 15V, 25A | Trench Field Stop | 49nC | 100A | 27ns/94ns | |||||||||||||||||||||||||||||||||||||||||||||||||
| RGCL60TS60DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgcl60ts60dgc11-datasheets-1902.pdf | TO-247-3 | 17 Weeks | NOT SPECIFIED | NOT SPECIFIED | 111W | 58ns | 600V | 48A | 400V, 30A, 10 Ω, 15V | 1.8V @ 15V, 30A | Trench Field Stop | 68nC | 120A | 44ns/186ns | 770μJ (on), 1.11mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGH40N60UFTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/onsemiconductor-fgh40n60uftu-datasheets-1835.pdf | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | Lead Free | 3 | 6 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 290W | FGH40N60 | Single | 1 | Insulated Gate BIP Transistors | 24 ns | 112 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 290W | TO-247AB | 600V | 1.8V | 110 ns | 600V | 80A | 190 ns | 400V, 40A, 10 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 40A | Field Stop | 120nC | 120A | 24ns/112ns | 1.19mJ (on), 460μJ (off) | 100ns | ||||||||||||||||||||||||||
| RGCL80TK60GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgcl80tk60gc11-datasheets-1842.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | POWER CONTROL | N-CHANNEL | 57W | 114 ns | 600V | 35A | 565 ns | 400V, 40A, 10 Ω, 15V | 1.8V @ 15V, 40A | Trench Field Stop | 98nC | 160A | 53ns/227ns | 1.11mJ (on), 1.68mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB35N60FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-ngtb35n60fl2wg-datasheets-1844.pdf | TO-247-3 | 16.26mm | 21.08mm | 5.3mm | Lead Free | 8 Weeks | 38.000013g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | 300W | Single | 300W | 68 ns | 600V | 2.2V | 600V | 70A | 400V, 35A, 10 Ω, 15V | 2V @ 15V, 35A | Trench Field Stop | 125nC | 120A | 72ns/132ns | 840μJ (on), 280μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| FGH20N60UFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | Lead Free | 3 | 4 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 165W | Single | 1 | Insulated Gate BIP Transistors | 13 ns | 87 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 165W | TO-247AB | 34 ns | 600V | 600V | 29 ns | 600V | 40A | 155 ns | 400V, 20A, 10 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 20A | Field Stop | 63nC | 60A | 13ns/87ns | 380μJ (on), 260μJ (off) | 64ns | |||||||||||||||||||||||||||
| RGT50NS65DGC9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt50ns65dgc9-datasheets-1770.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 194W | 58ns | 65 ns | 650V | 48A | 210 ns | 400V, 25A, 10 Ω, 15V | 2.1V @ 15V, 25A | Trench Field Stop | 49nC | 75A | 27ns/88ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STGP30V60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw30v60df-datasheets-5894.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | 3 | 20 Weeks | 3 | EAR99 | No | 258W | STGP30 | Single | 258W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 53ns | 600V | 2.35V | 59 ns | 600V | 60A | 225 ns | 400V, 30A, 10 Ω, 15V | 20V | 2.3V @ 15V, 30A | Trench Field Stop | 163nC | 120A | 45ns/189ns | 383μJ (on), 233μJ (off) | |||||||||||||||||||||||||||||||||||||||
| RGT40TM65DGC9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt40tm65dgc9-datasheets-1776.pdf | TO-220-3 Full Pack | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 39W | TO-220AB | 58ns | 51 ns | 650V | 17A | 204 ns | 400V, 20A, 10 Ω, 15V | 2.1V @ 15V, 20A | Trench Field Stop | 40nC | 60A | 22ns/75ns | |||||||||||||||||||||||||||||||||||||||||||||||||
| HGTP12N60A4D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2002 | /files/onsemiconductor-hgt1s12n60a4ds-datasheets-2184.pdf | 600V | 54A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 167W | HGTP12N60 | Single | 167W | 1 | 17 ns | 8ns | 96 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 54A | 18 ns | 600V | 2V | 33 ns | 600V | 54A | 180 ns | 390V, 12A, 10 Ω, 15V | 2.7V @ 15V, 12A | 78nC | 96A | 17ns/96ns | 55μJ (on), 50μJ (off) | |||||||||||||||||||||||||||
| STGP20NC60V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb20nc60v-datasheets-5090.pdf | 600V | 30A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 8 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | 200W | STGP20 | 3 | Single | 200W | 1 | Insulated Gate BIP Transistors | 31 ns | 11ns | 150 ns | SILICON | POWER CONTROL | N-CHANNEL | 30A | TO-220AB | 600V | 2.5V | 42.5 ns | 600V | 60A | 280 ns | 390V, 20A, 3.3 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 20A | 100nC | 100A | 31ns/100ns | 220μJ (on), 330μJ (off) | |||||||||||||||||||||||||||
| STGWA19NC60HD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa19nc60hd-datasheets-1794.pdf | TO-247-3 | 25.54mm | Lead Free | 3 | 8 Weeks | 6.500007g | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 208W | STGWA19 | 3 | Single | 208W | 1 | Insulated Gate BIP Transistors | 150°C | R-PSFM-T3 | 25 ns | 97 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 52A | 31 ns | 600V | 2.5V | 32 ns | 600V | 52A | 272 ns | 390V, 12A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 12A | 53nC | 60A | 25ns/97ns | 85μJ (on), 189μJ (off) | |||||||||||||||||||||||||||||||||
| FGH20N60SFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | Lead Free | 3 | 5 Weeks | 6.39g | No SVHC | 3 | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 165W | Single | 1 | Insulated Gate BIP Transistors | 13 ns | 16ns | 90 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 165W | TO-247AB | 34 ns | 600V | 600V | 28 ns | 600V | 40A | 123 ns | 400V, 20A, 10 Ω, 15V | 20V | 6.5V | 2.8V @ 15V, 20A | Field Stop | 65nC | 60A | 13ns/90ns | 370μJ (on), 160μJ (off) | 48ns | |||||||||||||||||||||||||||
| FGHL40S65UQ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Not Applicable | Standard | ROHS3 Compliant | /files/onsemiconductor-fghl40s65uq-datasheets-1813.pdf | TO-247-3 Variant | 12 Weeks | yes | 231W | 319ns | 650V | 80A | 400V, 40A, 6 Ω, 15V | 1.7V @ 15V, 40A | Trench Field Stop | 306nC | 120A | 32ns/260ns | 1.76mJ (on), 362μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTG35N65FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/onsemiconductor-ngtg35n65fl2wg-datasheets-1816.pdf | TO-247-3 | 16.26mm | 21.08mm | 5.3mm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | Tin | e3 | 300W | Single | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | 650V | 1.7V | 108 ns | 650V | 70A | 231 ns | 400V, 35A, 10 Ω, 15V | 2V @ 15V, 35A | Field Stop | 125nC | 120A | 72ns/132ns | 840μJ (on), 280μJ (off) | |||||||||||||||||||||||||||||||||||||||
| FGAF40N60UFTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/onsemiconductor-fgaf40n60uftu-datasheets-1823.pdf | 600V | 40A | TO-3P-3 Full Pack | 15.5mm | 26.5mm | 5.5mm | Lead Free | 3 | 8 Weeks | 6.962g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 100W | Single | 100W | 1 | Insulated Gate BIP Transistors | 40A | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 3V | 67 ns | 600V | 40A | 600V | 190 ns | 300V, 20A, 10 Ω, 15V | 20V | 6.5V | 3V @ 15V, 20A | 77nC | 160A | 15ns/65ns | 470μJ (on), 130μJ (off) | 250ns | ||||||||||||||||||||||||||||
| STGWA50IH65DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | IH | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | RoHS Compliant | /files/stmicroelectronics-stgwa50ih65df-datasheets-1829.pdf | TO-247-3 | 32 Weeks | compliant | NOT SPECIFIED | STGWA50 | NOT SPECIFIED | 300W | 650V | 100A | 400V, 50A, 22 Ω, 15V | 2V @ 15V, 50A | Trench Field Stop | 158nC | 150A | -/260ns | 284μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGT30TM65DGC9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt30tm65dgc9-datasheets-1833.pdf | TO-220-3 Full Pack | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 32W | TO-220AB | 55ns | 40 ns | 650V | 14A | 204 ns | 400V, 15A, 10 Ω, 15V | 2.1V @ 15V, 15A | Trench Field Stop | 32nC | 45A | 18ns/64ns | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF20B65LN2 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 45W | 266ns | 650V | 40A | 400V, 20A, 15 Ω, 15V | 1.95V @ 15V, 20A | 52nC | 60A | 23ns/135ns | 450μJ (on), 260μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGP10N60RUFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-sgp10n60rufdtu-datasheets-1690.pdf | 600V | 10A | TO-220-3 | Lead Free | 3 | 13 Weeks | 1.8g | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | No | 8541.29.00.95 | e3 | Tin (Sn) | 208W | SG*10N60 | Single | 75W | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | MOTOR CONTROL | N-CHANNEL | 600V | TO-220AB | 42 ns | 600V | 2.2V | 49 ns | 600V | 16A | 284 ns | 300V, 10A, 20 Ω, 15V | 20V | 8V | 2.8V @ 15V, 10A | 30nC | 30A | 15ns/36ns | 141μJ (on), 215μJ (off) | 220ns | ||||||||||||||||||||||||||||||
| HGTP7N60A4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/onsemiconductor-hgtp7n60a4f102-datasheets-1287.pdf | 600V | 34A | TO-220-3 | 10.28mm | 9.02mm | 4.57mm | Lead Free | 3 | 44 Weeks | 1.8g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 125W | HGTP7N60 | Single | 125W | 1 | 11 ns | 11ns | 100 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 1.9V | 17 ns | 600V | 34A | 205 ns | 390V, 7A, 25 Ω, 15V | 2.7V @ 15V, 7A | 37nC | 56A | 11ns/100ns | 55μJ (on), 60μJ (off) | ||||||||||||||||||||||||||||
| FGA15S125P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fga15s125p-datasheets-1704.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 136W | NOT SPECIFIED | Single | NOT SPECIFIED | 136W | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | 1.25kV | 2.72V | 331 ns | 1.25kV | 30A | 1250V | 670 ns | 25V | 7.5V | 2.72V @ 15V, 15A | Trench | 129nC | 45A |
