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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Input Capacitance | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| RGCL80TK60DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/rohmsemiconductor-rgcl80tk60dgc11-datasheets-1996.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 57W | 58ns | 114 ns | 600V | 35A | 565 ns | 400V, 40A, 10 Ω, 15V | 1.8V @ 15V, 40A | Trench Field Stop | 98nC | 160A | 53ns/227ns | 1.11mJ (on), 1.68mJ (off) | ||||||||||||||||||||||||||||||||||||||||
| RGW60TK65GVC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw60tk65gvc11-datasheets-1998.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | POWER CONTROL | N-CHANNEL | 72W | 50 ns | 650V | 33A | 209 ns | 400V, 30A, 10 Ω, 15V | 1.9V @ 15V, 30A | Trench Field Stop | 84nC | 120A | 37ns/114ns | 480μJ (on), 490μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| NGB8207BNT4G | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | ROHS3 Compliant | 2011 | /files/littelfuseinc-ngb8207bnt4g-datasheets-1598.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | EAR99 | unknown | NOT SPECIFIED | NGB8207 | NOT SPECIFIED | 165W | 365V | 20A | 2.6V @ 4V, 20A | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH60N60C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh30n60c3d1-datasheets-0556.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | 380W | SINGLE | NOT SPECIFIED | IXG*60N60 | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | 21 ns | 70 ns | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 380W | TO-247AD | 25 ns | 600V | 64 ns | 2.5V | 75A | 226 ns | 480V, 40A, 3 Ω, 15V | 20V | 5V | 2.5V @ 15V, 40A | PT | 115nC | 300A | 21ns/70ns | 800μJ (on), 450μJ (off) | 95ns | |||||||||||||||||||||||||
| RGTH60TK65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgth60tk65dgc11-datasheets-2008.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 61W | 58ns | 67 ns | 650V | 28A | 179 ns | 400V, 30A, 10 Ω, 15V | 2.1V @ 15V, 30A | Trench Field Stop | 58nC | 120A | 27ns/105ns | ||||||||||||||||||||||||||||||||||||||||||
| RGCL60TS60GC11 | ROHM Semiconductor | $3.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rgcl60ts60gc11-datasheets-2010.pdf | TO-247-3 | 17 Weeks | NOT SPECIFIED | NOT SPECIFIED | 111W | 600V | 48A | 400V, 30A, 10 Ω, 15V | 1.8V @ 15V, 30A | Trench Field Stop | 68nC | 120A | 44ns/186ns | 770μJ (on), 1.11mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH48N60C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh30n60c3d1-datasheets-0556.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 300W | NOT SPECIFIED | IXG*48N60 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | 1.96nF | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | 25ns | 600V | 2.5V | 45 ns | 600V | 75A | 187 ns | 400V, 30A, 3 Ω, 15V | 20V | 5.5V | 2.5V @ 15V, 30A | PT | 77nC | 250A | 19ns/60ns | 410μJ (on), 230μJ (off) | ||||||||||||||||||||||||
| IXYX140N90C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyk140n90c3-datasheets-0642.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 1.63kW | SINGLE | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 1630W | 900V | 122 ns | 2.7V | 310A | 300 ns | 450V, 100A, 1 Ω, 15V | 20V | 5.5V | 2.7V @ 15V, 140A | 330nC | 840A | 40ns/145ns | 4.3mJ (on), 4mJ (off) | |||||||||||||||||||||||||||||||||||||
| AUIRGP4063D-E | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirgp4063d-datasheets-5499.pdf | TO-247-3 | 3 | 16 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 330W | 330W | TO-247AD | 115ns | 100 ns | 56ns | 600V | 100A | 210 ns | 400V, 48A, 10 Ω, 15V | 20V | 6.5V | 1.9V @ 15V, 48A | Trench | 140nC | 144A | 60ns/145ns | 625μJ (on), 1.28mJ (off) | 46ns | |||||||||||||||||||||||||||||||
| RGTV60TK65GVC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgtv60tk65gvc11-datasheets-1961.pdf | TO-3PFM, SC-93-3 | 17 Weeks | NOT SPECIFIED | NOT SPECIFIED | 76W | 650V | 33A | 400V, 30A, 10 Ω, 15V | 1.9V @ 15V, 30A | Trench Field Stop | 64nC | 120A | 33ns/105ns | 570μJ (on), 500μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW25M120DF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa25m120df3-datasheets-0581.pdf | TO-247-3 | Lead Free | 30 Weeks | 38.000013g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 375W | NOT SPECIFIED | STGW25 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 375W | 265 ns | 1.2kV | 1.85V | 1.2kV | 50A | 1200V | 600V, 25A, 15 Ω, 15V | 20V | 7V | 2.3V @ 15V, 25A | Trench Field Stop | 85nC | 100A | 28ns/150ns | 850μJ (on), 1.3mJ (off) | ||||||||||||||||||||||||||||||||||||
| RGTV60TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgtv60ts65dgc11-datasheets-1968.pdf | TO-247-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 194W | 95ns | 45 ns | 650V | 60A | 201 ns | 400V, 30A, 10 Ω, 15V | 1.9V @ 15V, 30A | Trench Field Stop | 64nC | 120A | 33ns/105ns | 570μJ (on), 500μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| RGTV00TS65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgtv00ts65gc11-datasheets-1914.pdf | TO-247-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 276W | 62 ns | 650V | 95A | 247 ns | 400V, 50A, 10 Ω, 15V | 1.9V @ 15V, 50A | Trench Field Stop | 104nC | 200A | 41ns/142ns | 1.17mJ (on), 940μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| FGAF20N60SMD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgaf20n60smd-datasheets-1917.pdf | TO-3P-3 Full Pack | 15.7mm | 26.7mm | 3.2mm | Lead Free | 3 | 7 Weeks | 6.962g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 75W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | MOTOR CONTROL | N-CHANNEL | 75W | 26.7 ns | 600V | 1.9V | 31 ns | 600V | 40A | 109 ns | 400V, 20A, 10 Ω, 15V | 20V | 6V | 1.7V @ 15V, 20A | Field Stop | 64nC | 60A | 12ns/91ns | 452μJ (on), 141μJ (off) | 27ns | |||||||||||||||||||||||
| RGW60TS65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw60ts65gc11-datasheets-1924.pdf | TO-247-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 178W | 50 ns | 650V | 60A | 209 ns | 400V, 30A, 10 Ω, 15V | 1.9V @ 15V, 30A | Trench Field Stop | 84nC | 120A | 37ns/114ns | 480μJ (on), 490μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| STGWA25H120F2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa25h120f2-datasheets-1927.pdf | TO-247-3 | 3 | 32 Weeks | 8541.29.00.95 | 375W | SINGLE | NOT SPECIFIED | STGWA25 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 375W | 1.2kV | 41 ns | 2.6V | 50A | 1200V | 339 ns | 600V, 25A, 10 Ω, 15V | 20V | 7V | 2.6V @ 15V, 25A | Trench Field Stop | 100nC | 100A | 29ns/130ns | 600μJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||
| RGTH80TK65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/rohmsemiconductor-rgth80tk65gc11-datasheets-1934.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | POWER CONTROL | N-CHANNEL | 66W | 84 ns | 650V | 31A | 194 ns | 400V, 40A, 10 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 79nC | 160A | 34ns/120ns | ||||||||||||||||||||||||||||||||||||||||||
| IXYH40N90C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyh40n90c3d1-datasheets-1936.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | 500W | Single | 500W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 100ns | 900V | 2.2V | 81 ns | 900V | 90A | 237 ns | 450V, 40A, 5 Ω, 15V | 20V | 5.5V | 2.5V @ 15V, 40A | 74nC | 180A | 27ns/78ns | 1.9mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||
| RGCL80TS60DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgcl80ts60dgc11-datasheets-1938.pdf | TO-247-3 | 17 Weeks | NOT SPECIFIED | NOT SPECIFIED | 148W | 58ns | 600V | 65A | 400V, 40A, 10 Ω, 15V | 1.8V @ 15V, 40A | Trench Field Stop | 98nC | 160A | 53ns/227ns | 1.11mJ (on), 1.68mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGW00TS65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw00ts65gc11-datasheets-1940.pdf | TO-247-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 254W | 72 ns | 650V | 96A | 273 ns | 400V, 50A, 10 Ω, 15V | 1.9V @ 15V, 50A | Trench Field Stop | 141nC | 200A | 52ns/180ns | 1.18mJ (on), 960μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| RGS60TS65HRC11 | ROHM Semiconductor | $8.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | RoHS Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rgs60ts65hrc11-datasheets-1943.pdf | TO-247-3 | 8 Weeks | compliant | 223W | 650V | 56A | 400V, 30A, 10 Ω, 15V | 2.1V @ 15V, 30A | Trench Field Stop | 36nC | 90A | 28ns/104ns | 660μJ (on), 810μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB40N65FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-ngtb40n65fl2wg-datasheets-1945.pdf | TO-247-3 | 16.26mm | 21.08mm | 5.3mm | Lead Free | 21 Weeks | 38.000013g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | 366W | Single | 366W | 72 ns | 650V | 2.1V | 650V | 80A | 400V, 40A, 10 Ω, 15V | 2V @ 15V, 40A | Trench Field Stop | 170nC | 160A | 84ns/177ns | 970μJ (on), 440μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| STGW25H120F2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa25h120f2-datasheets-1927.pdf | TO-247-3 | Lead Free | 3 | 32 Weeks | 38.000013g | ACTIVE (Last Updated: 8 months ago) | EAR99 | 375W | NOT SPECIFIED | STGW25 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | POWER CONTROL | N-CHANNEL | 375W | 1.2kV | 2.1V | 41 ns | 2.6V | 50A | 1200V | 339 ns | 600V, 25A, 10 Ω, 15V | 20V | 7V | 2.6V @ 15V, 25A | Trench Field Stop | 100nC | 100A | 29ns/130ns | 600μJ (on), 700μJ (off) | ||||||||||||||||||||||||||||||||
| IKA15N65ET6XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ika15n65et6xksa1-datasheets-1011.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 45W | TO-220AB | 69ns | 50 ns | 650V | 17A | 202 ns | 400V, 11.5A, 47 Ω, 15V | 1.9V @ 15V, 11.5A | Trench Field Stop | 37nC | 57.5A | 30ns/117ns | 230μJ (on), 110μJ (off) | |||||||||||||||||||||||||||||||||||
| NGTG25N120FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/onsemiconductor-ngtg25n120fl2wg-datasheets-1904.pdf | TO-247-3 | Lead Free | 3 | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | 385W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | POWER CONTROL | N-CHANNEL | 385W | 1.2kV | 178 ns | 2.4V | 50A | 1200V | 430 ns | 600V, 25A, 10 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 25A | Trench Field Stop | 178nC | 100A | 87ns/179ns | 1.95mJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||
| RGW80TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw80ts65dgc11-datasheets-1958.pdf | TO-247-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 214W | 92ns | 59 ns | 650V | 78A | 228 ns | 400V, 40A, 10 Ω, 15V | 1.9V @ 15V, 40A | Trench Field Stop | 110nC | 160A | 44ns/143ns | 760μJ (on), 720μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| RGTH40TK65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgth40tk65dgc11-datasheets-1908.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 56W | 58ns | 47 ns | 650V | 23A | 141 ns | 400V, 20A, 10 Ω, 15V | 2.1V @ 15V, 20A | Trench Field Stop | 40nC | 80A | 22ns/73ns | |||||||||||||||||||||||||||||||||||||||||||
| RGCL60TK60DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgcl60tk60dgc11-datasheets-1910.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 54W | 58ns | 85 ns | 600V | 30A | 479 ns | 400V, 30A, 10 Ω, 15V | 1.8V @ 15V, 30A | Trench Field Stop | 68nC | 120A | 44ns/186ns | 770μJ (on), 1.11mJ (off) | |||||||||||||||||||||||||||||||||||||||||
| RGTH60TK65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgth60tk65gc11-datasheets-1912.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | POWER CONTROL | N-CHANNEL | 61W | 67 ns | 650V | 28A | 179 ns | 400V, 30A, 10 Ω, 15V | 2.1V @ 15V, 30A | Trench Field Stop | 58nC | 120A | 27ns/105ns | |||||||||||||||||||||||||||||||||||||||||||
| NGTB35N60FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-ngtb35n60fl2wg-datasheets-1844.pdf | TO-247-3 | 16.26mm | 21.08mm | 5.3mm | Lead Free | 8 Weeks | 38.000013g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | 300W | Single | 300W | 68 ns | 600V | 2.2V | 600V | 70A | 400V, 35A, 10 Ω, 15V | 2V @ 15V, 35A | Trench Field Stop | 125nC | 120A | 72ns/132ns | 840μJ (on), 280μJ (off) |
