Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Voltage - Threshold | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Nominal Vgs | Rds On Max | Capacitance - Input |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TPC8012-H(TE12L,Q) | Toshiba |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | Cut Tape (CT) | 150°C | -55°C | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/toshiba-tpc8012hte12lq-datasheets-1529.pdf | 200V | 1.8A | SOP | Lead Free | 8 | unknown | 1.9W | 23ns | 23 ns | 1.8A | 30V | 200V | 200V | 400 mΩ | 440pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2032ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2032engrt-datasheets-1463.pdf | 48A | 100V | 4 mΩ | 1.53nF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SVD5865NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | 260 | -55°C | 30 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 203A | 13mOhm | 36 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2032ENGR | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2032engr-datasheets-6061.pdf | 48A | 100V | 4 mΩ | 1.53nF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2031ENGR | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2031engr-datasheets-5924.pdf | 31A | 60V | 2.6 mΩ | 1.8nF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2030ENGR | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2030engr-datasheets-5853.pdf | 31A | 40V | 2.4 mΩ | 1.9nF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML6401GTRPBF | Infineon |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | TO-236-3 | 3.0226mm | 1.1mm | 1.397mm | Lead Free | 50mOhm | 3 | EAR99 | No | 1 | Single | 1.3W | Other Transistors | 150°C | 11 ns | 32ns | 210 ns | 250 ns | -4.3A | 8V | P-CHANNEL | -12V | METAL-OXIDE SEMICONDUCTOR | 1.3W | 50mOhm | -550mV | -12V | 50 mΩ | 830pF | |||||||||||||||||||||||||||||||||||||||||||||
| IRLML6302GTRPBF | Infineon | $0.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | TO-236-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 600mOhm | 3 | EAR99 | HIGH RELIABILITY | No | 8541.21.00.95 | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 540mW | 1 | Other Transistors | 13 ns | 18ns | 22 ns | 22 ns | 780mA | 12V | SWITCHING | P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 540mW | 0.78A | 60mOhm | -20V | 600 mΩ | 97pF | ||||||||||||||||||||||||||||||||||||
| IRLML5203GTRPBF | Infineon | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineon-irlml5203gtrpbf-datasheets-1140.pdf | TO-236-3 | 3.0226mm | 1.12mm | 1.397mm | Lead Free | 3 | 10 Weeks | 98MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Single | 1.25W | 1 | Other Transistors | 150°C | 12 ns | 8.2ns | 16 ns | 88 ns | -3A | 20V | SWITCHING | P-CHANNEL | -30V | METAL-OXIDE SEMICONDUCTOR | 1.25W | 3A | 24A | 98mOhm | -2.5V | -30V | 98 mΩ | 510pF | ||||||||||||||||||||||||||||||
| IRLML5103GTRPBF | Infineon | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | SOT-23 | 3.0226mm | 1.016mm | 1.397mm | 3 | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 540mW | 1 | Other Transistors | 10 ns | 8.2ns | 16 ns | 23 ns | 760mA | 20V | SWITCHING | P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 540mW | 0.76A | 600mOhm | -30V | 600 mΩ | 75pF | |||||||||||||||||||||||||||||||||||||||
| IRLML2803GTRPBF | Infineon | $0.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | SOT-23 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | No SVHC | 3 | EAR99 | HIGH RELIABILITY | No | 8541.21.00.95 | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 540mW | 1 | FET General Purpose Power | 3.9 ns | 4ns | 1.7 ns | 9 ns | 1.2A | 20V | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 540mW | 250mOhm | 30V | 1 V | 250 mΩ | 85pF | ||||||||||||||||||||||||||||||||||||
| EPC2815 | EPCOS |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2012CENGR | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2012cengr-datasheets-0538.pdf | 5A | 200V | 100 mΩ | 100pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML2402GTRPBF | Infineon | $0.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | TO-236-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 250MOhm | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 540mW | 1 | FET General Purpose Power | 2.5 ns | 9.5ns | 4.8 ns | 9.7 ns | 1.2A | 12V | SWITCHING | N-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 540mW | 250mOhm | 20V | 250 mΩ | 110pF | ||||||||||||||||||||||||||||||||||||
| EPC2029ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2029engrt-datasheets-0024.pdf | 31A | 80V | 3.2 mΩ | 1.4nF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2010CENGR | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2010cengr-datasheets-9381.pdf | 22A | 200V | 25 mΩ | 380pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2801 | EPCOS |
Min: 1 Mult: 1 |
0 | 0x0x0 | Cut Tape (CT) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4435 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/alphaomegasemiconductor-ao4435-datasheets-9013.pdf | SOIC | 8 | 16 Weeks | 8 | EAR99 | DUAL | GULL WING | 8 | 1 | Other Transistors | Not Qualified | 10.5A | SINGLE WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 3.1W | 0.014Ohm | 14 mΩ | 1.4nF | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPC313N10N3RX7SA1 | Infineon |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | Non-RoHS Compliant | yes | YES | UNSPECIFIED | NO LEAD | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 0.1Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R600E6 | Infineon | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | Through Hole | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | TO-220 | Lead Free | 3 | yes | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 10 ns | 8ns | 11 ns | 58 ns | 7.3A | 20V | 600V | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 0.6Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
| RJK6035DPP-E0#T2 | Renesas |
Min: 1 Mult: 1 |
0 | 0x0x0 | Through Hole | 150°C | -55°C | RoHS Compliant | TO-220-3 | Lead Free | 3 | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | FET General Purpose Powers | 12 ns | 4.6ns | 5.3 ns | 65 ns | 6A | 30V | Single | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 29.5W | 6A | 1.37Ohm | 1.37 Ω | 765pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R450E6 | Infineon | $7.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | Through Hole | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | TO-220 | Lead Free | 3 | yes | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 74W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 11 ns | 9ns | 10 ns | 70 ns | 9.2A | 20V | 600V | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 26A | 0.45Ohm | |||||||||||||||||||||||||||||||||||||||||||||
| AOTF11S60 | Alpha & Omega Semiconductor | $2.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aotf11s60-datasheets-1535.pdf | TO-220-3 | 3 | 16 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSFM-T3 | 11A | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 38W | TO-220AB | 45A | 0.399Ohm | 120 mJ | 399 mΩ | 545pF | ||||||||||||||||||||||||||||||||||||||||||||||||
| MKE38RK600DFELB-TRR | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | SMD/SMT | 9 | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | DUAL | GULL WING | 9 | 1 | FET General Purpose Power | R-PDSO-G9 | 50A | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | 1950 mJ | 45 mΩ | 6.8nF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R190E6 | Infineon |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineon-ipp60r190e6-datasheets-0881.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | No SVHC | 3 | yes | Tin | Halogen Free | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 151W | 1 | FET General Purpose Power | Not Qualified | 12 ns | 10ns | 8 ns | 90 ns | 20.2A | 20V | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 151W | TO-220AB | 59A | 170mOhm | 418 mJ | 650V | 190 mΩ | 1.4nF | ||||||||||||||||||||||||||||||||||
| RJK6006DPP-E0#T2 | Renesas |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount, Through Hole | 150°C | -55°C | RoHS Compliant | TO-220-3 | 3 | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | 25 ns | 17ns | 10 ns | 60 ns | 5A | 30V | 600V | 29W | 1.6 Ω | 600pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK5035DPP-E0#T2 | Renesas | $2.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | Through Hole | 150°C | -55°C | RoHS Compliant | TO-220-3 | 3 | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | FET General Purpose Powers | 13.3 ns | 8.6ns | 7.7 ns | 37.6 ns | 10A | 30V | Single | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | 29.5W | 850 mΩ | 765pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT12067B2FLLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | Through Hole | 150°C | -55°C | RoHS Compliant | 1.2kV | 18A | TO-247-3 | Lead Free | 3 | yes | No | 3 | 565W | 1 | 22 ns | 19ns | 19 ns | 22 ns | 18A | 30V | 1.2kV | 565W | 670 mΩ | 4.42nF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT12N60FD | Alpha & Omega Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aot12n60fd-datasheets-8357.pdf | TO-220-3 | 16 Weeks | FET General Purpose Powers | 12A | Single | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 278W | 650 mΩ | 2.01nF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2040ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2040engrt-datasheets-5821.pdf | 3.4A | 15V | 28 mΩ | 100pF |
