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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Capacitance - Input |
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| EPC2025ENGR | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2025engr-datasheets-0205.pdf | 4A | 300V | 150 mΩ | 194pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2037ENGR | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2037engr-datasheets-9469.pdf | 1A | 100V | 550 mΩ | 12.5pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2047ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS64DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss64dnt1ge3-datasheets-1951.pdf | PowerPAK® 1212-8S | 1.17mm | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 4.8W | 1 | 150°C | S-PDSO-N5 | 13 ns | 25 ns | 37A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 57W Tc | 40A | 0.00286Ohm | 45 mJ | 30V | N-Channel | 3420pF @ 15V | 2.1m Ω @ 10A, 10V | 2.2V @ 250μA | 40A Tc | 68nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4164DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4164dyt1ge3-datasheets-2194.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 3.2MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 3W | 1 | 35 ns | 16ns | 16 ns | 48 ns | 30A | 20V | SILICON | SWITCHING | 30V | 30V | 2.5V | 3W Ta 6W Tc | N-Channel | 3545pF @ 15V | 3.2m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 95nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y8R5-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y8r580ex-datasheets-2041.pdf | SC-100, SOT-669 | Brass | 4 | 12 Weeks | 4 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 4 | Single | 238W | 1 | 28 ns | 50ns | 45 ns | 82 ns | 100A | 10V | 80V | DRAIN | SWITCHING | 18 AWG | 14 AWG | 238W Tc | MO-235 | Gold, Tin | 0.0085Ohm | N-Channel | 8167pF @ 25V | 8m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 54.7nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM020N04LCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm020n04lcrrlg-datasheets-2278.pdf | 8-PowerTDFN | 5 | 32 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 104W Tc | 27A | 680A | 0.0026Ohm | 277 mJ | N-Channel | 7942pF @ 20V | 2m Ω @ 27A, 10V | 2.5V @ 250μA | 170A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF60R217 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf60r217-datasheets-2397.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 58A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 83W Tc | TO-252AA | 217A | 0.0099Ohm | 124 mJ | N-Channel | 2170pF @ 25V | 9.9m Ω @ 35A, 10V | 3.7V @ 50μA | 58A Tc | 66nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR606DP-T1-GE3 | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir606dpt1ge3-datasheets-2395.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 100V | 44.5W Tc | N-Channel | 1360pF @ 50V | 16.2m Ω @ 15A, 10V | 3.6V @ 250μA | 37A Tc | 22nC @ 6V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80P03P4L07ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd80p03p4l07atma1-datasheets-2281.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 26 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 88W | 1 | R-PSSO-G2 | 8 ns | 4ns | 60 ns | 15 ns | 80A | 5V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 88W Tc | 320A | 0.0068Ohm | P-Channel | 5700pF @ 25V | 6.8m Ω @ 80A, 10V | 2V @ 130μA | 80A Tc | 80nC @ 10V | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8304MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf8304mtr1pbf-datasheets-8530.pdf | DirectFET™ Isometric MX | 12 Weeks | No SVHC | 7 | No | 100W | DIRECTFET™ MX | 4.7nF | 16 ns | 22ns | 13 ns | 19 ns | 28A | 20V | 30V | 2.8W Ta 100W Tc | 3.2mOhm | 30V | N-Channel | 4700pF @ 15V | 1.8 V | 2.2mOhm @ 28A, 10V | 2.35V @ 100μA | 28A Ta 170A Tc | 42nC @ 4.5V | 2.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4848DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4848dyt1e3-datasheets-7754.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 85mOhm | 8 | yes | EAR99 | No | e4 | Silver (Ag) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | 9 ns | 10ns | 17 ns | 24 ns | 2.7A | 20V | SILICON | 2V | 1.5W Ta | 150V | N-Channel | 85m Ω @ 3.5A, 10V | 2V @ 250μA (Min) | 2.7A Ta | 21nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR120TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 270mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.8 ns | 64ns | 27 ns | 21 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 100V | N-Channel | 490pF @ 25V | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI9407BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si9407bdyt1ge3-datasheets-7869.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.4W | 1 | Other Transistors | 30 ns | 70ns | 30 ns | 40 ns | 3.2A | 20V | SILICON | SWITCHING | 60V | 5W Tc | 4.7A | -60V | P-Channel | 600pF @ 30V | 120m Ω @ 3.2A, 10V | 3V @ 250μA | 4.7A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7660AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7660as-datasheets-2382.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 18 Weeks | 68.1mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 83W | 1 | FET General Purpose Power | R-PDSO-F5 | 19 ns | 8ns | 5 ns | 40 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 2.5W Ta 83W Tc | MO-240AA | 0.0024Ohm | 30V | N-Channel | 6120pF @ 15V | 2.4m Ω @ 25A, 10V | 3V @ 1mA | 26A Ta 42A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPS70R900P7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-ips70r900p7sakma1-datasheets-2390.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 700V | 30.5W Tc | N-Channel | 211pF @ 400V | 900m Ω @ 1.1A, 10V | 3.5V @ 60μA | 6A Tc | 6.8nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD04N50C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-spd04n50c3btma1-datasheets-5786.pdf | 560V | 4.5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | 3 | 50W | 1 | PG-TO252-3-1 | 470pF | 10 ns | 5ns | 70 ns | 4.5A | 20V | 500V | 500V | 50W Tc | 850mOhm | N-Channel | 470pF @ 25V | 950mOhm @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 22nC @ 10V | 950 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17553Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD17553 | Single | NOT SPECIFIED | 3.1W | 1 | FET General Purpose Power | 9.7 ns | 17ns | 5.2 ns | 14.8 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta | 23.5A | 0.004Ohm | 60 pF | N-Channel | 3252pF @ 15V | 3.1m Ω @ 20A, 10V | 1.9V @ 250μA | 23.5A Ta 100A Tc | 21.5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI7421DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7421dnt1e3-datasheets-6759.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 10 ns | 13ns | 42 ns | 57 ns | -9.8A | 20V | SILICON | DRAIN | SWITCHING | 30V | -3V | 1.5W Ta | 6.4A | 30A | 0.025Ohm | -30V | P-Channel | 25m Ω @ 9.8A, 10V | 3V @ 250μA | 6.4A Ta | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI7119DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7119dnt1ge3-datasheets-4330.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 1.05Ohm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 9 ns | 11ns | 12 ns | 27 ns | -3.8A | 20V | SILICON | DRAIN | SWITCHING | 200V | 3.7W Ta 52W Tc | 5A | -200V | P-Channel | 666pF @ 50V | 1.05 Ω @ 1A, 10V | 4V @ 250μA | 3.8A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| PHB32N06LT,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-phb32n06lt118-datasheets-2227.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | 29A | e3 | Tin (Sn) | 60V | YES | GULL WING | 245 | 3 | Single | 30 | 97W | 1 | R-PSSO-G2 | 14 ns | 120ns | 55 ns | 45 ns | 34A | 15V | 60V | SILICON | DRAIN | SWITCHING | 97W Tc | 60V | N-Channel | 1280pF @ 25V | 37m Ω @ 20A, 10V | 2V @ 1mA | 34A Tc | 17nC @ 5V | 4.5V 5V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSC018N04LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc018n04lsgatma1-datasheets-2232.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 125W | 1 | Not Qualified | R-PDSO-F5 | 7.4ns | 30A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 125W Tc | 400A | 0.0025Ohm | 295 mJ | N-Channel | 12000pF @ 20V | 1.8m Ω @ 50A, 10V | 2V @ 85μA | 30A Ta 100A Tc | 150nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9629-100B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk9629100b118-datasheets-2290.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 157W | 1 | R-PSSO-G2 | 30 ns | 86ns | 46 ns | 96 ns | 46A | 15V | 100V | SILICON | DRAIN | SWITCHING | 157W Tc | 186A | 152 mJ | 100V | N-Channel | 4360pF @ 25V | 27m Ω @ 25A, 10V | 2V @ 1mA | 46A Tc | 33nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD30N08S2L21ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd30n08s2l21atma1-datasheets-2298.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.41mm | 6.22mm | Lead Free | 2 | 10 Weeks | No SVHC | 3 | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 136W | 1 | R-PSSO-G2 | 9 ns | 30ns | 11 ns | 44 ns | 30A | 20V | 75V | SILICON | DRAIN | 136W Tc | 120A | 0.026Ohm | 240 mJ | 75V | N-Channel | 1650pF @ 25V | 20.5m Ω @ 25A, 10V | 2V @ 80μA | 30A Tc | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK9616-75B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk961675b118-datasheets-2274.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | GULL WING | 3 | Single | 157W | 1 | R-PSSO-G2 | 30 ns | 102ns | 57 ns | 101 ns | 67A | 15V | 75V | SILICON | DRAIN | SWITCHING | 157W Tc | 270A | 75V | N-Channel | 4034pF @ 25V | 14m Ω @ 25A, 10V | 2V @ 1mA | 67A Tc | 35nC @ 5V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7440TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfh7440tr2pbf-datasheets-3005.pdf | 8-PowerTDFN | 5.85mm | 1.05mm | 5mm | Lead Free | 12 Weeks | No SVHC | 2.4MOhm | 8 | EAR99 | No | 1 | 104W | FET General Purpose Power | 150°C | 12 ns | 45ns | 42 ns | 53 ns | 85A | 20V | Single | 2.2V | 104W Tc | 40V | N-Channel | 4574pF @ 25V | 2.4m Ω @ 50A, 10V | 3.9V @ 100μA | 85A Tc | 138nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6607-55C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk660755c118-datasheets-2107.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | Tin | not_compliant | e3 | YES | GULL WING | 3 | Single | 158W | 1 | R-PSSO-G2 | 18 ns | 44ns | 78 ns | 165 ns | 100A | 16V | 55V | SILICON | DRAIN | SWITCHING | 158W Tc | 420A | 55V | N-Channel | 5160pF @ 25V | 6.5m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 82nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS4C03NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfs4c03nt3g-datasheets-0692.pdf | 8-PowerTDFN | Lead Free | 5 | 8 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 1 | 1 | FET General Purpose Power | R-PDSO-F5 | 14 ns | 32ns | 17 ns | 27 ns | 143A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.71W Ta 77W Tc | 900A | 0.0024Ohm | 549 mJ | 30V | N-Channel | 3071pF @ 15V | 2.1m Ω @ 30A, 10V | 2.2V @ 250μA | 31.4A Ta 143A Tc | 45.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK380P65Y,RQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk380p65yrq-datasheets-2125.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | DPAK | 650V | 80W Tc | N-Channel | 590pF @ 300V | 380mOhm @ 4.9A, 10V | 4V @ 360μA | 9.7A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR164DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir164dpt1re3-datasheets-0464.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3.2MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 69W | 1 | FET General Purpose Power | R-PDSO-C5 | 35 ns | 41ns | 39 ns | 52 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.2V | 5.2W Ta 69W Tc | 33.3A | 70A | 30V | N-Channel | 3950pF @ 15V | 2.5m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 123nC @ 10V | 4.5V 10V | ±20V |
