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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDS8813NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fds8813nz-datasheets-1935.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 4.5MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | TIN | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 13 ns | 8ns | 7 ns | 39 ns | 18.5A | 20V | 30V | SILICON | SWITCHING | 1.8V | 2.5W Ta | 520 pF | 30V | N-Channel | 4145pF @ 15V | 1.8 V | 4.5m Ω @ 18.5A, 10V | 3V @ 250μA | 18.5A Ta | 76nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| DMTH6004SK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-dmth6004sk3q13-datasheets-2007.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 23 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.9W Ta 180W Tc | 150A | 0.0038Ohm | 200 mJ | N-Channel | 4556pF @ 30V | 3.8m Ω @ 90A, 10V | 4V @ 250μA | 100A Tc | 95.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC020N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc020n03lsgatma1-datasheets-2062.pdf | 8-PowerTDFN | Contains Lead | 8 | 26 Weeks | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 96W | 1 | Not Qualified | 7ns | 28A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 96W Tc | 400A | 0.0029Ohm | N-Channel | 7200pF @ 15V | 2m Ω @ 30A, 10V | 2.2V @ 250μA | 28A Ta 100A Tc | 93nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7308DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7308dnt1ge3-datasheets-5925.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 58mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | FET General Purpose Power | S-XDSO-C5 | 10 ns | 15ns | 10 ns | 20 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 3V | 3.2W Ta 19.8W Tc | 5.4A | 20A | 60V | N-Channel | 665pF @ 15V | 58m Ω @ 5.4A, 10V | 3V @ 250μA | 6A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDFS6N548 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdfs6n548-datasheets-1892.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 187mg | No SVHC | 23MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2W | 1 | FET General Purpose Power | 2mA | 450mV | 6 ns | 2ns | 2 ns | 14 ns | 7A | 20V | 30V | SILICON | SWITCHING | 1.6W Ta | 7A | 30A | 30V | N-Channel | 700pF @ 15V | 1.8 V | 23m Ω @ 7A, 10V | 2.5V @ 250μA | 7A Ta | 13nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| DMT6010LSS-13 | Diodes Incorporated | $5.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt6010lss13-datasheets-1911.pdf | 8-SOIC (0.154, 3.90mm Width) | 23 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 14A | 60V | 1.5W Ta | N-Channel | 2090pF @ 30V | 8m Ω @ 20A, 10V | 2V @ 250μA | 14A Ta | 41.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R600P6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r600p6-datasheets-1513.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.41mm | 6.22mm | Lead Free | 2 | 18 Weeks | 3.949996g | No SVHC | 3 | yes | EAR99 | not_compliant | Not Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 11 ns | 33 ns | 7.3A | 30V | 600V | SILICON | DRAIN | SWITCHING | 4V | 63W Tc | 0.6Ohm | N-Channel | 557pF @ 100V | 600m Ω @ 2.4A, 10V | 4.5V @ 200μA | 7.3A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIRC18DP-T1-GE3 | Vishay Siliconix | $1.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sirc18dpt1ge3-datasheets-1933.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | 30V | 54.3W Tc | N-Channel | 5060pF @ 15V | 1.1m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 111nC @ 10V | Schottky Diode (Body) | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD40131EL_GE3 | Vishay Siliconix | $2.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40131elge3-datasheets-1670.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 62W Tc | 9.5mOhm | P-Channel | 6600pF @ 25V | 11.5mOhm @ 30A, 10V | 2.5V @ 250μA | 50A Tc | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD35N12S3L24ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/infineontechnologies-ipd35n12s3l24atma1-datasheets-1968.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 120V | 120V | 71W Tc | 35A | 140A | 0.032Ohm | 175 mJ | N-Channel | 2700pF @ 25V | 24m Ω @ 35A, 10V | 2.4V @ 39μA | 35A Tc | 39nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7386DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7386dpt1ge3-datasheets-7400.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 7mOhm | 8 | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 12 ns | 9ns | 10 ns | 35 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.8W Ta | 50A | 32 mJ | 30V | N-Channel | 7m Ω @ 19A, 10V | 2.5V @ 250μA | 12A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| CSD17581Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | CSD17581 | Single | 1 | 123A | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 83W Tc | 24A | 256A | 0.0042Ohm | 195 pF | 76 mJ | N-Channel | 3640pF @ 15V | 3.4m Ω @ 16A, 10V | 1.7V @ 250μA | 24A Ta 123A Tc | 54nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9614-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk961460e118-datasheets-2026.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 16.9 ns | 22.4ns | 22.9 ns | 35.7 ns | 56A | 15V | 60V | SILICON | DRAIN | SWITCHING | 96W Tc | 224A | 60V | N-Channel | 2651pF @ 25V | 12.8m Ω @ 15A, 10V | 2.1V @ 1mA | 56A Tc | 20.5nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7S10N1Z,LQ | Toshiba Semiconductor and Storage | $1.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk7s10n1zlq-datasheets-2037.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | 7A | 10V | 100V | 50W Tc | N-Channel | 470pF @ 10V | 48m Ω @ 3.5A, 10V | 4V @ 100μA | 7A Ta | 7.1nC @ 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR186DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sir186dpt1re3-datasheets-1807.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 5W | 150°C | 10 ns | 14 ns | 23A | 20V | 57W Tc | 60V | N-Channel | 1710pF @ 30V | 4.5m Ω @ 15A, 10V | 3.6V @ 250μA | 60A Tc | 37nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR48ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfr48ztrpbf-datasheets-9197.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10.3886mm | 2.3876mm | 6.73mm | 2 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 91W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 61ns | 35 ns | 40 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 91W Tc | TO-252AA | 250A | 74 mJ | 55V | N-Channel | 1720pF @ 25V | 11m Ω @ 37A, 10V | 4V @ 50μA | 42A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDD8870 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdu8870-datasheets-8241.pdf | 30V | 160A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.517mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | No SVHC | 4.4MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | 1 | Single | 160W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 9 ns | 83ns | 42 ns | 83 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 160W Tc | TO-252AA | 690 mJ | 30V | N-Channel | 5160pF @ 15V | 3.9m Ω @ 35A, 10V | 2.5V @ 250μA | 21A Ta 160A Tc | 118nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIRA01DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira01dpt1ge3-datasheets-1839.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 5W Ta 62.5W Tc | 4.1mOhm | P-Channel | 3490pF @ 15V | 4.9mOhm @ 15A, 10V | 2.2V @ 250μA | 26A Ta 60A Tc | 112nC @ 10V | 4.5V 10V | +16V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD25CN10NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd25cn10ngbuma1-datasheets-3459.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | yes | EAR99 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 71W | 1 | R-PSSO-G2 | 10 ns | 4ns | 3 ns | 13 ns | 35A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 71W Tc | 140A | 0.025Ohm | 65 mJ | N-Channel | 2070pF @ 50V | 25m Ω @ 35A, 10V | 4V @ 39μA | 35A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NDS8425 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-nds8425-datasheets-1709.pdf | 20V | 7.4A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 18 Weeks | 130mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 9 ns | 13ns | 11 ns | 26 ns | 7.4A | 8V | SILICON | SWITCHING | 2.5W Ta | 0.022Ohm | 20V | N-Channel | 1098pF @ 15V | 22m Ω @ 7.4A, 4.5V | 1.5V @ 250μA | 7.4A Ta | 18nC @ 4.5V | 2.7V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD80R1K4CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd80r1k4cebtma1-datasheets-7317.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | 3.949996g | 3 | 1 | Single | 63W | 1 | PG-TO252-3 | 570pF | 25 ns | 15ns | 12 ns | 72 ns | 3.9A | 20V | 800V | 800V | 63W Tc | 1.4Ohm | N-Channel | 570pF @ 100V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240μA | 3.9A Tc | 23nC @ 10V | 1.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD390N15A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdd390n15a-datasheets-1341.pdf&product=onsemiconductor-fdd390n15a-10058151 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | 2 | ACTIVE (Last Updated: 4 hours ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | 14 ns | 10ns | 5 ns | 20 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 63W Tc | 0.04Ohm | 78 mJ | 150V | N-Channel | 1285pF @ 75V | 40m Ω @ 26A, 10V | 4V @ 250μA | 26A Tc | 18.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| R6004ENDTL | ROHM Semiconductor | $1.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | No SVHC | 3 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 20W Tc | 4A | 8A | 0.98Ohm | 46 mJ | N-Channel | 250pF @ 25V | 980m Ω @ 1.5A, 10V | 4V @ 1mA | 4A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISA04DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sisa04dnt1ge3-datasheets-1648.pdf | PowerPAK® 1212-8 | 3.1496mm | 1.0668mm | 3.1496mm | Lead Free | 5 | 14 Weeks | Unknown | 2.15mOhm | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.7W | 1 | FET General Purpose Powers | S-PDSO-C5 | 24 ns | 20 ns | 30 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 3.7W Ta 52W Tc | 20 mJ | 30V | N-Channel | 3595pF @ 15V | 1.1 V | 2.15m Ω @ 15A, 10V | 2.2V @ 250μA | 40A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||
| CSD17522Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 8 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD17522 | 8 | NOT SPECIFIED | 3W | 1 | FET General Purpose Power | Not Qualified | 6.7 ns | 12ns | 3.7 ns | 10.5 ns | 87A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3W Ta | 44 pF | 54 mJ | 30V | N-Channel | 695pF @ 15V | 8.1m Ω @ 14A, 10V | 2V @ 250μA | 87A Tc | 4.3nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIR184DP-T1-RE3 | Vishay Siliconix | $1.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir184dpt1re3-datasheets-1800.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 60V | 5W Ta 62.5W Tc | 4.7mOhm | N-Channel | 1490pF @ 30V | 5.8mOhm @ 10A, 10V | 3.4V @ 250μA | 20.7A Ta 73A Tc | 32nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO033N03MSGXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bso033n03msgxuma1-datasheets-1802.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | 8 | EAR99 | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1.56W | 1 | 12.8ns | 17A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.56W Ta | 0.0033Ohm | N-Channel | 9600pF @ 15V | 3.3m Ω @ 22A, 10V | 2V @ 250μA | 17A Ta | 124nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCD4N60TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcd4n60tf-datasheets-6786.pdf | 600V | 3.9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.517mm | 6.22mm | Lead Free | 2 | 13 Weeks | 260.37mg | No SVHC | 1.2Ohm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | GULL WING | FCD4N60 | 1 | Single | 50W | 1 | FET General Purpose Power | 150°C | R-PSSO-G2 | 16 ns | 45ns | 30 ns | 36 ns | 3.9A | 30V | 600V | SILICON | DRAIN | SWITCHING | 5V | 50W Tc | 600V | N-Channel | 540pF @ 25V | 5 V | 1.2 Ω @ 2A, 10V | 5V @ 250μA | 3.9A Tc | 16.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| 2N7008-G | Microchip Technology | $0.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microchiptechnology-2n7008g-datasheets-1600.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 16 Weeks | 453.59237mg | 3 | EAR99 | Tin | No | e3 | BOTTOM | WIRE | 1 | Single | 1W | 1 | FET General Purpose Power | 20 ns | 20 ns | 230mA | 30V | SILICON | SWITCHING | 1W Tc | 5 pF | 60V | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 230mA Tj | 5V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y15-100E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk9y15100e115-datasheets-1584.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | 1 | Single | 1 | 21 ns | 32ns | 59 ns | 85 ns | 69A | 15V | 100V | SILICON | DRAIN | SWITCHING | 195W Tc | MO-235 | 100V | N-Channel | 6139pF @ 25V | 14.7m Ω @ 20A, 10V | 2.1V @ 1mA | 69A Tc | 45.8nC @ 5V | 5V 10V | ±10V |
