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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFZ48NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfz48nstrlpbf-datasheets-8663.pdf | 55V | 64A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 14MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 130W | 1 | R-PSSO-G2 | 12 ns | 78ns | 50 ns | 34 ns | 64A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 130W Tc | 100 ns | 100 ns | 55V | N-Channel | 1970pF @ 25V | 4 V | 14m Ω @ 32A, 10V | 4V @ 250μA | 64A Tc | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF520NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf520npbf-datasheets-9792.pdf | 100V | 9.7A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | Single | 48W | 1 | FET General Purpose Power | 4.5 ns | 23ns | 23 ns | 32 ns | 9.7A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 48W Tc | TO-220AB | 150 ns | 9.5A | 0.2Ohm | 100V | N-Channel | 330pF @ 25V | 4 V | 200m Ω @ 5.7A, 10V | 4V @ 250μA | 9.7A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRLI520NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irli520npbf-datasheets-9801.pdf | 100V | 8.1A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | 3 | 14 Weeks | No SVHC | 180MOhm | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | Single | NOT SPECIFIED | 27W | 1 | Not Qualified | 2kV | 40 ns | 35ns | 22 ns | 23 ns | 8.1A | 16V | 100V | SILICON | ISOLATED | SWITCHING | 2V | 30W Tc | TO-220AB | 85 mJ | 100V | N-Channel | 440pF @ 25V | 2 V | 180m Ω @ 6A, 10V | 2V @ 250μA | 8.1A Tc | 20nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| ZVP2110A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvp2110a-datasheets-9810.pdf | -100V | -230mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 8Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | CECC | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | Other Transistors | 7 ns | 15ns | 15 ns | 12 ns | 230mA | 20V | SILICON | SWITCHING | 100V | -3.5V | 700mW Ta | -100V | P-Channel | 100pF @ 25V | 8 Ω @ 375mA, 10V | 3.5V @ 1mA | 230mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF200B211 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf200b211-datasheets-9820.pdf | TO-220-3 | Lead Free | 12 Weeks | 170mOhm | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 12A | 200V | 80W Tc | N-Channel | 790pF @ 50V | 170m Ω @ 7.2A, 10V | 4.9V @ 50μA | 12A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB11NK40ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb11nk40zt4-datasheets-9727.pdf | 400V | 9A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 12 Weeks | No SVHC | 550mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB11N | 4 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 20ns | 18 ns | 40 ns | 4.5A | 30V | SILICON | SWITCHING | 3.75V | 110W Tc | 9A | 400V | N-Channel | 930pF @ 25V | 550m Ω @ 4.5A, 10V | 4.5V @ 100μA | 9A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| TN0610N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn0610n3g-datasheets-9704.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 20 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE | Tin | No | e3 | BOTTOM | 1 | Single | 1W | 1 | FET General Purpose Power | 6 ns | 14ns | 16 ns | 16 ns | 500mA | 20V | SILICON | SWITCHING | 1W Tc | 0.5A | 2Ohm | 100V | N-Channel | 150pF @ 25V | 1.5 Ω @ 750mA, 10V | 2V @ 1mA | 500mA Tj | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FQP20N06L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqp20n06l-datasheets-9710.pdf | 60V | 21A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 70mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 53W | 1 | FET General Purpose Power | 10 ns | 165ns | 70 ns | 35 ns | 21A | 20V | SILICON | SWITCHING | 2.5V | 53W Tc | TO-220AB | 84A | 60V | N-Channel | 630pF @ 25V | 55m Ω @ 10.5A, 10V | 2.5V @ 250μA | 21A Tc | 13nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIR404DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir404dpt1ge3-datasheets-9526.pdf | PowerPAK® SO-8 | 6.15mm | 1.04mm | 5.15mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 6.25W | 1 | FET General Purpose Powers | R-XDSO-C5 | 35 ns | 20ns | 26 ns | 123 ns | 45.6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.25W Ta 104W Tc | 60A | 20V | N-Channel | 8130pF @ 10V | 1.6m Ω @ 20A, 10V | 1.5V @ 250μA | 60A Tc | 97nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| SI7115DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7115dnt1ge3-datasheets-0397.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 11 ns | 28ns | 35 ns | 52 ns | 2.3A | 20V | SILICON | DRAIN | SWITCHING | 150V | 52W Tc | 0.295Ohm | -150V | P-Channel | 1190pF @ 50V | 295m Ω @ 4A, 10V | 4V @ 250μA | 8.9A Tc | 42nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRLU120NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr120ntrpbf-datasheets-1519.pdf | 100V | 10A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 12 Weeks | No SVHC | 185mOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 48W | 1 | FET General Purpose Power | 4 ns | 35ns | 22 ns | 23 ns | 10A | 16V | 100V | SILICON | DRAIN | SWITCHING | 2V | 48W Tc | 85 mJ | 100V | N-Channel | 440pF @ 25V | 2 V | 185m Ω @ 6A, 10V | 2V @ 250μA | 10A Tc | 20nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IRLU024NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irlr024ntrpbf-datasheets-9485.pdf | 55V | 17A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 65mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 45W | 1 | FET General Purpose Power | 7.1 ns | 74ns | 29 ns | 20 ns | 17A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 45W Tc | 72A | 68 mJ | 55V | N-Channel | 480pF @ 25V | 2 V | 65m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 15nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IRF1010ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf1010zstrlpbf-datasheets-9374.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 150ns | 92 ns | 36 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 140W Tc | 0.0075Ohm | 55V | N-Channel | 2840pF @ 25V | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFS4615TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4615trlpbf-datasheets-9557.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 144W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 35ns | 20 ns | 25 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 144W Tc | 0.042Ohm | 150V | N-Channel | 1750pF @ 50V | 42m Ω @ 21A, 10V | 5V @ 100μA | 33A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FCD380N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcd380n60e-datasheets-9345.pdf&product=onsemiconductor-fcd380n60e-6829201 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 15 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | not_compliant | 8541.29.00.95 | e3 | GULL WING | NOT SPECIFIED | FCD380N60 | Single | NOT SPECIFIED | 106W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 9ns | 10 ns | 64 ns | 10.2A | 30V | SILICON | DRAIN | SWITCHING | 600V | 106W Tc | TO-252AA | 211.6 mJ | 650V | N-Channel | 1770pF @ 25V | 380m Ω @ 5A, 10V | 3.5V @ 250μA | 10.2A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFB3607PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb3607pbf-datasheets-9648.pdf | TO-220-3 | 10.6426mm | 9.017mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 9MOhm | 3 | EAR99 | Tin | No | Single | 140W | 1 | FET General Purpose Power | 16 ns | 110ns | 96 ns | 43 ns | 80A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | TO-220AB | 50 ns | 75V | N-Channel | 3070pF @ 50V | 4 V | 9m Ω @ 46A, 10V | 4V @ 100μA | 80A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUD80460E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sud80460ege3-datasheets-9664.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 2 | 14 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 65.2W | 1 | 175°C | R-PSSO-G2 | 8 ns | 15 ns | 42A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 65.2W Tc | 40A | 0.0447Ohm | 150V | N-Channel | 560pF @ 50V | 44.7m Ω @ 8.3A, 10V | 4V @ 250μA | 42A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TP0606N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/microchiptechnology-tp0606n3g-datasheets-9666.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | No | e3 | MATTE TIN | BOTTOM | WIRE | 1 | Single | 1W | 1 | Other Transistors | 10 ns | 15ns | 15 ns | 20 ns | 320mA | 20V | SILICON | SWITCHING | 60V | 1W Tc | -60V | P-Channel | 150pF @ 25V | 3.5 Ω @ 750mA, 10V | 2.4V @ 1mA | 320mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRL2703PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl2703pbf-datasheets-9685.pdf | 30V | 24A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Lead Free | 3 | 14 Weeks | No SVHC | 40MOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | Tin | No | e3 | 250 | Single | 30 | 45W | 1 | FET General Purpose Power | 8.5 ns | 140ns | 20 ns | 12 ns | 24A | 16V | 30V | SILICON | DRAIN | SWITCHING | 1V | 45W Tc | TO-220AB | 97 ns | 96A | 77 mJ | 30V | N-Channel | 450pF @ 25V | 1 V | 40m Ω @ 14A, 10V | 1V @ 250μA | 24A Tc | 15nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
| TN2540N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn2540n8g-datasheets-9473.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | 3 | 2 Weeks | 52.786812mg | 4 | EAR99 | LOW THRESHOLD | Tin | e3 | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-F3 | 20 ns | 15ns | 15 ns | 25 ns | 260mA | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta | 0.57A | 400V | N-Channel | 125pF @ 25V | 12 Ω @ 500mA, 10V | 2V @ 1mA | 260mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIR871DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir871dpt1ge3-datasheets-9512.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 89W Tc | 48A | 300A | 0.02Ohm | 61 mJ | P-Channel | 3395pF @ 50V | 20m Ω @ 20A, 10V | 2.6V @ 250μA | 48A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7812DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7812dnt1ge3-datasheets-0414.pdf | PowerPAK® 1212-8 | 3.05mm | 1.12mm | 3.05mm | Lead Free | 5 | 14 Weeks | No SVHC | 37mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Powers | 150°C | S-XDSO-C5 | 15 ns | 20ns | 10 ns | 35 ns | 7.2A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 52W Tc | 25A | 75V | N-Channel | 840pF @ 35V | 37m Ω @ 7.2A, 10V | 3V @ 250μA | 16A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFZ44ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfz44zpbf-datasheets-9533.pdf | 55V | 51A | TO-220-3 | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 13.9Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 80W | 1 | FET General Purpose Power | 14 ns | 68ns | 41 ns | 33 ns | 51A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 80W Tc | TO-220AB | 35 ns | 200A | 86 mJ | 55V | N-Channel | 1420pF @ 25V | 4 V | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPA60R600P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipa60r600p7sxksa1-datasheets-9543.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 21W Tc | TO-220AB | 16A | 0.6Ohm | 17 mJ | N-Channel | 363pF @ 400V | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 6A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP13N06L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqp13n06l-datasheets-9357.pdf | 60V | 13.6A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 110mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FAST SWITCHING | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 45W | 1 | FET General Purpose Power | Not Qualified | 8 ns | 90ns | 40 ns | 20 ns | 13.6A | 20V | 60V | SILICON | SWITCHING | 2.5V | 45W Tc | TO-220AB | 54.4A | 90 mJ | 60V | N-Channel | 350pF @ 25V | 2.5 V | 110m Ω @ 6.8A, 10V | 2.5V @ 250μA | 13.6A Tc | 6.4nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| TN0104N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn0104n3g-datasheets-9385.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 9 Weeks | 219.992299mg | 3 | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | FET General Purpose Power | 3 ns | 7ns | 5 ns | 6 ns | 450mA | 20V | SILICON | SWITCHING | 1W Tc | 0.45A | 40V | N-Channel | 70pF @ 20V | 1.8 Ω @ 1A, 10V | 1.6V @ 500μA | 450mA Ta | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF520PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf520pbf-datasheets-9409.pdf | 100V | 9.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 270mOhm | 3 | Tin | No | 1 | Single | 60W | 1 | TO-220AB | 360pF | 8.8 ns | 30ns | 20 ns | 19 ns | 9.2A | 20V | 100V | 4V | 60W Tc | 260 ns | 270mOhm | N-Channel | 360pF @ 25V | 10 V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TN2524N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn2524n8g-datasheets-9204.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 6 Weeks | 52.786812mg | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | FET General Purpose Power | R-PSSO-F3 | 10 ns | 10ns | 10 ns | 20 ns | 360mA | 20V | SILICON | DRAIN | SWITCHING | 1.6W Tc | 0.36A | 2A | 6Ohm | 240V | N-Channel | 125pF @ 25V | 6 Ω @ 500mA, 10V | 2V @ 1mA | 360mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SUD25N15-52-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud25n1552e3-datasheets-9329.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 52mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 3W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 15 ns | 70ns | 60 ns | 25 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 4V | 3W Ta 136W Tc | 50A | 150V | N-Channel | 1725pF @ 25V | 4 V | 52m Ω @ 5A, 10V | 4V @ 250μA | 25A Tc | 40nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQU17P06TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fqu17p06tu-datasheets-9459.pdf | -60V | -12A | TO-251-3 Short Leads, IPak, TO-251AA | 6.8mm | 7.57mm | 2.5mm | Lead Free | 3 | 7 Weeks | 343.08mg | No SVHC | 135MOhm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | Single | 2.5W | 1 | Other Transistors | 13 ns | 100ns | 60 ns | 22 ns | -12A | 25V | SILICON | SWITCHING | 60V | -4V | 2.5W Ta 44W Tc | 48A | -60V | P-Channel | 900pF @ 25V | 135m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 27nC @ 10V | 10V | ±25V |
