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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CSD17506Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17506 | 8 | Single | 3.2W | 1 | FET General Purpose Power | 7.5 ns | 13ns | 5.3 ns | 13 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 1.3V | 3.2W Ta | 23A | 0.0053Ohm | 65 pF | 259 mJ | 30V | N-Channel | 1650pF @ 15V | 1.3 V | 4m Ω @ 20A, 10V | 1.8V @ 250μA | 100A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRLR2905TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr2905trlpbf-datasheets-6372.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 20A | 160A | 0.03Ohm | 210 mJ | N-Channel | 1700pF @ 25V | 27m Ω @ 25A, 10V | 2V @ 250μA | 42A Tc | 48nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y1R7-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | /files/nexperiausainc-buk7y1r740hx-datasheets-8129.pdf | SC-100, SOT-669 | 12 Weeks | compliant | 4 | 40V | 294W Tc | N-Channel | 6142pF @ 25V | 1.7m Ω @ 25A, 10V | 3.6V @ 1mA | 120A Ta | 96nC @ 10V | 10V | +20V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN2540N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/microchiptechnology-dn2540n3g-datasheets-8163.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 5 Weeks | 453.59237mg | No SVHC | 3 | EAR99 | HIGH INPUT IMPEDANCE | e3 | Matte Tin (Sn) | BOTTOM | WIRE | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 1W | 1 | FET General Purpose Power | Not Qualified | 10 ns | 15ns | 20 ns | 15 ns | 120mA | 20V | SILICON | SWITCHING | 1W Tc | 5 pF | 400V | N-Channel | 300pF @ 25V | 25 Ω @ 120mA, 0V | 120mA Tj | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDD5690 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-fdd5690-datasheets-7451.pdf | 60V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 27MOhm | 3 | ACTIVE (Last Updated: 11 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 50W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 9ns | 10 ns | 24 ns | 30A | 20V | 60V | SILICON | DRAIN | SWITCHING | 2.5V | 3.2W Ta 50W Tc | 90 mJ | 60V | N-Channel | 1110pF @ 25V | 2.5 V | 27m Ω @ 9A, 10V | 4V @ 250μA | 30A Tc | 32nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FDD9409L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdd9409lf085-datasheets-8179.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 260.37mg | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 40V | 150W Tj | N-Channel | 3360pF @ 20V | 2.6m Ω @ 80A, 10V | 3V @ 250μA | 90A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN4206A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn4206a-datasheets-8216.pdf | 60V | 600mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 1Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | FET General Purpose Powers | 8 ns | 12ns | 12 ns | 12 ns | 600mA | 20V | SILICON | SWITCHING | 3V | 700mW Ta | 0.6A | 20 pF | 60V | N-Channel | 100pF @ 25V | 1 Ω @ 1.5A, 10V | 3V @ 1mA | 600mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQB30N06LTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqb30n06ltm-datasheets-8224.pdf | 60V | 32A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 9 Weeks | 1.31247g | No SVHC | 35mOhm | 3 | ACTIVE (Last Updated: 19 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 210ns | 110 ns | 60 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 3.75W Ta 79W Tc | 60V | N-Channel | 1040pF @ 25V | 35m Ω @ 16A, 10V | 2.5V @ 250μA | 32A Tc | 20nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPD90R1K2C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd90r1k2c3atma1-datasheets-7966.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | 3.949996g | 3 | 1 | Single | 83W | PG-TO252-3 | 710pF | 70 ns | 20ns | 40 ns | 400 ns | 5.1A | 30V | 900V | 900V | 83W Tc | 1.2Ohm | N-Channel | 710pF @ 100V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310μA | 5.1A Tc | 28nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6415DQ-T1-E3 | Vishay Siliconix | $1.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6415dqt1e3-datasheets-8202.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 19mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 16 ns | 17ns | 17 ns | 73 ns | 6.5A | 20V | SILICON | 30V | -1V | 1.5W Ta | 30A | -30V | P-Channel | 19m Ω @ 6.5A, 10V | 1V @ 250μA (Min) | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STD3N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std3n80k5-datasheets-8152.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 17 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | GULL WING | STD3N | Single | 110W | 1 | R-PSSO-G2 | 8.5 ns | 7.5ns | 25 ns | 20.5 ns | 2.5A | 30V | SILICON | DRAIN | SWITCHING | 60W Tc | 65 mJ | 800V | N-Channel | 130pF @ 100V | 3.5 Ω @ 1A, 10V | 5V @ 100μA | 2.5A Tc | 9.5nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R4-40YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-psmn1r440yldx-datasheets-7732.pdf | SC-100, SOT-669 | 4 | 12 Weeks | HIGH RELIABILITY | GULL WING | 4 | 1 | Single | 1 | R-PSSO-G4 | 39 ns | 49ns | 30 ns | 47 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 238W Tc | MO-235 | 446 mJ | 40V | N-Channel | 6661pF @ 20V | 1.4m Ω @ 25A, 10V | 2.2V @ 1mA | 100A Tc | 96nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA20DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sira20dpt1re3-datasheets-7583.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 25V | 6.25W Ta 104W Tc | N-Channel | 10850pF @ 10V | 0.58m Ω @ 20A, 10V | 2.1V @ 250μA | 81.7A Ta 100A Tc | 200nC @ 10V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH8R80ANH,L1Q | Toshiba Semiconductor and Storage | $1.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | Single | 61W | 8-SOP Advance (5x5) | 2.8nF | 7ns | 12 ns | 33 ns | 32A | 20V | 100V | 1.6W Ta 61W Tc | 7.4mOhm | 100V | N-Channel | 2800pF @ 50V | 8.8mOhm @ 16A, 10V | 4V @ 500μA | 32A Tc | 33nC @ 10V | 8.8 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD5353 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdd5353-datasheets-7817.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 12.3MOhm | 3 | ACTIVE (Last Updated: 8 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 6ns | 4 ns | 36 ns | 11.5A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 3.1W Ta 69W Tc | 54A | 60V | N-Channel | 3215pF @ 30V | 1.8 V | 12.3m Ω @ 10.7A, 10V | 3V @ 250μA | 11.5A Ta 50A Tc | 65nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| ZVN2106A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn2106a-datasheets-7903.pdf | 60V | 450mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 2Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | FET General Purpose Powers | 450mA | 20V | SILICON | 2.4V | 700mW Ta | 0.45A | 20 pF | 60V | N-Channel | 75pF @ 18V | 2 Ω @ 1A, 10V | 2.4V @ 1mA | 450mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FQU8P10TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqu8p10tu-datasheets-7913.pdf | -100V | -6.7A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 Weeks | 343.08mg | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 110ns | 35 ns | 20 ns | 6.6A | 30V | SILICON | SWITCHING | 100V | 2.5W Ta 44W Tc | 26.4A | 0.53Ohm | -100V | P-Channel | 470pF @ 25V | 530m Ω @ 3.3A, 10V | 4V @ 250μA | 6.6A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| NTD3055L104-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntd3055l104t4g-datasheets-4707.pdf | 60V | 25A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 2.38mm | 6.22mm | Lead Free | 3 | 8 Weeks | No SVHC | 4 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 48W | 1 | FET General Purpose Power | R-PSIP-T3 | 9.2 ns | 104ns | 40.5 ns | 19 ns | 12A | 15V | SILICON | DRAIN | SWITCHING | 1.6V | 1.5W Ta 48W Tj | 60V | N-Channel | 440pF @ 25V | 2 V | 104m Ω @ 6A, 5V | 2V @ 250μA | 12A Ta | 20nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||||||
| ZVN2110A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zvn2110astz-datasheets-5399.pdf | 100V | 230mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 4Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | FET General Purpose Powers | 7 ns | 8ns | 8 ns | 13 ns | 320mA | 20V | SILICON | 2.4V | 700mW Ta | 8 pF | 100V | N-Channel | 75pF @ 25V | 4 Ω @ 1A, 10V | 2.4V @ 1mA | 320mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI7818DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7818dnt1e3-datasheets-8452.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 135MOhm | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | Not Qualified | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 25 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 2.2A | 4 mJ | 150V | N-Channel | 4 V | 135m Ω @ 3.4A, 10V | 4V @ 250μA | 2.2A Ta | 30nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PSMN0R9-30YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-psmn0r930yldx-datasheets-7881.pdf | SOT-1023, 4-LFPAK | 4 | 12 Weeks | 4 | AVALANCHE RATED, HIGH RELIABILITY | No | YES | GULL WING | 4 | 1 | Single | 1 | 38.1 ns | 49.8ns | 42.6 ns | 63 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 291W | 300A | 2987 mJ | N-Channel | 7668pF @ 15V | 0.87m Ω @ 25A, 10V | 2.2V @ 1mA | 300A | 109nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK965R4-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk965r440e118-datasheets-7973.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 27 ns | 50ns | 37 ns | 55 ns | 75A | 15V | 40V | SILICON | DRAIN | SWITCHING | 137W Tc | 460A | 0.0054Ohm | N-Channel | 4483pF @ 25V | 4.4m Ω @ 25A, 10V | 2.1V @ 1mA | 75A Tc | 33.9nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STD6N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std6n62k3-datasheets-8019.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 12 Weeks | No SVHC | 1.2Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD6N | 3 | Single | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 22 ns | 12.5ns | 19 ns | 49 ns | 5.5A | 30V | SILICON | SWITCHING | 620V | 3.75V | 90W Tc | 22A | 650V | N-Channel | 706pF @ 50V | 1.28 Ω @ 2.8A, 10V | 4.5V @ 50μA | 5.5A Tc | 25.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SI4455DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4455dyt1ge3-datasheets-7920.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 186.993455mg | 8 | No | 1 | Single | 3.1W | 1 | 8-SO | 1.19nF | 20 ns | 95ns | 34 ns | 38 ns | 2A | 20V | 150V | 5.9W Tc | 295mOhm | -150V | P-Channel | 1190pF @ 50V | 295mOhm @ 4A, 10V | 4V @ 250μA | 2A Ta | 42nC @ 10V | 295 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18504Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 8 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD18504 | Single | NOT SPECIFIED | 1 | 3.2 ns | 6.8ns | 2 ns | 12 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 3.1W Ta 77W Tc | 15A | 9.6 pF | 92 mJ | N-Channel | 1656pF @ 20V | 6.6m Ω @ 17A, 10V | 2.4V @ 250μA | 50A Ta | 9.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SPD04N80C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-spd04n80c3atma1-datasheets-7757.pdf | 800V | 4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | 3 | 63W | 1 | PG-TO252-3 | 570pF | 25 ns | 15ns | 12 ns | 72 ns | 4A | 20V | 800V | 800V | 63W Tc | 1.1Ohm | N-Channel | 570pF @ 100V | 1.3Ohm @ 2.5A, 10V | 3.9V @ 240μA | 4A Tc | 31nC @ 10V | 1.3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC360N15NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc360n15ns3gatma1-datasheets-7713.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 74W | 1 | FET General Purpose Powers | Not Qualified | 150°C | R-PDSO-F5 | 9 ns | 6ns | 12 ns | 33A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 74W Tc | 0.036Ohm | 150V | N-Channel | 1190pF @ 75V | 36m Ω @ 25A, 10V | 4V @ 45μA | 33A Tc | 15nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFR3411TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr3411trpbf-datasheets-7385.pdf | 100V | 32A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 44MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 130W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 35ns | 35 ns | 39 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 4V | 130W Tc | TO-252AA | 170 ns | 100V | N-Channel | 1960pF @ 25V | 4 V | 44m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 71nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NTB5605PT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntb5605pt4g-datasheets-7511.pdf | -60V | -18.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.29mm | 4.83mm | 9.65mm | Lead Free | 2 | 7 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 88W | 1 | Other Transistors | R-PSSO-G2 | 12.5 ns | 122ns | 75 ns | 29 ns | 18.5A | 20V | SILICON | DRAIN | SWITCHING | 60V | -1.5V | 88W Tc | 55A | -60V | P-Channel | 1190pF @ 25V | 140m Ω @ 8.5A, 5V | 2V @ 250μA | 18.5A Ta | 22nC @ 5V | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||
| ZVP3310A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvp3310a-datasheets-7589.pdf | -100V | -140mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 20Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 625mW | 1 | Other Transistors | 8 ns | 8ns | 8 ns | 8 ns | 140mA | 20V | SILICON | 100V | 625mW Ta | 5 pF | -100V | P-Channel | 50pF @ 25V | 20 Ω @ 150mA, 10V | 3.5V @ 1mA | 140mA Ta | 10V | ±20V |
