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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7812DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7812dnt1ge3-datasheets-0414.pdf | PowerPAK® 1212-8 | 3.05mm | 1.12mm | 3.05mm | Lead Free | 5 | 14 Weeks | No SVHC | 37mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Powers | 150°C | S-XDSO-C5 | 15 ns | 20ns | 10 ns | 35 ns | 7.2A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 52W Tc | 25A | 75V | N-Channel | 840pF @ 35V | 37m Ω @ 7.2A, 10V | 3V @ 250μA | 16A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFZ44ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfz44zpbf-datasheets-9533.pdf | 55V | 51A | TO-220-3 | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 13.9Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 80W | 1 | FET General Purpose Power | 14 ns | 68ns | 41 ns | 33 ns | 51A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 80W Tc | TO-220AB | 35 ns | 200A | 86 mJ | 55V | N-Channel | 1420pF @ 25V | 4 V | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPA60R600P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipa60r600p7sxksa1-datasheets-9543.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 21W Tc | TO-220AB | 16A | 0.6Ohm | 17 mJ | N-Channel | 363pF @ 400V | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 6A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86260 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmc86260-datasheets-9065.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 10 Weeks | 152.7mg | 8 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FDMC86260 | Single | 54W | 1 | FET General Purpose Power | S-PDSO-N5 | 9.5 ns | 2ns | 3.3 ns | 17 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 2.3W Ta 54W Tc | MO-240BA | 5.4A | 0.034Ohm | 121 mJ | 150V | N-Channel | 1330pF @ 75V | 34m Ω @ 5.4A, 10V | 4V @ 250μA | 5.4A Ta 16A Tc | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STD45NF75T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 75V | 40A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD45 | 3 | Single | 30 | 125W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 40ns | 12 ns | 55 ns | 20A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 125W Tc | TO-252AA | 0.024Ohm | 500 mJ | 75V | N-Channel | 1760pF @ 25V | 4 V | 24m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTP2955G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-ntp2955g-datasheets-9170.pdf | -60V | -12A | TO-220-3 | 10.28mm | 9.28mm | 4.82mm | Lead Free | 3 | 9 Weeks | 4.535924g | No SVHC | 156MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 260 | 3 | Single | 40 | 2.4W | 1 | Other Transistors | 10 ns | 41ns | 45 ns | 27 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 60V | -4V | 2.4W Ta 62.5W Tc | TO-220AB | 2.4A | 42A | -60V | P-Channel | 700pF @ 25V | 196m Ω @ 12A, 10V | 4V @ 250μA | 2.4A Ta | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF9510PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf9510pbf-datasheets-9175.pdf | -100V | -4A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.2Ohm | 3 | No | 1 | Single | 43W | 1 | 175°C | TO-220AB | 200pF | 10 ns | 27ns | 17 ns | 15 ns | -4A | 20V | 100V | -2V | 43W Tc | 160 ns | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | -4 V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTD4815N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-ntd4815n35g-datasheets-9183.pdf | 30V | 35A | TO-251-3 Stub Leads, IPak | 6.73mm | 2.38mm | 7.49mm | Lead Free | 3 | 2 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 32.6W | 1 | FET General Purpose Power | Not Qualified | 10.5 ns | 21.4ns | 21.4 ns | 11.4 ns | 35A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.5V | 1.26W Ta 32.6W Tc | 6.9A | 87A | 0.025Ohm | 60.5 mJ | 30V | N-Channel | 770pF @ 12V | 2.5 V | 15m Ω @ 30A, 10V | 2.5V @ 250μA | 6.9A Ta 35A Tc | 14.1nC @ 11.5V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||||||||||||
| FDMS2672 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdms2672-datasheets-9091.pdf | 200V | 3.7A | 8-PowerWDFN | 5mm | 750μm | 6mm | Lead Free | 8 | 10 Weeks | 210mg | 77MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Gold | e4 | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | 22 ns | 11ns | 10 ns | 36 ns | 3.7A | 20V | SILICON | 2.5W Ta 78W Tc | 20A | 200V | N-Channel | 2315pF @ 100V | 77m Ω @ 3.7A, 10V | 4V @ 250μA | 3.7A Ta 20A Tc | 42nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TP2510N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/microchiptechnology-tp2510n8g-datasheets-9197.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 6 Weeks | 52.786812mg | 4 | EAR99 | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | Other Transistors | R-PSSO-F3 | 10 ns | 15ns | 15 ns | 20 ns | 480mA | 20V | SILICON | DRAIN | SWITCHING | 100V | 1.6W Ta | 2.5A | -100V | P-Channel | 125pF @ 25V | 3.5 Ω @ 750mA, 10V | 2.4V @ 1mA | 480mA Tj | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFB7545PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb7545pbf-datasheets-9286.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 12 Weeks | 6.000006g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 125W | 12 ns | 72ns | 43 ns | 44 ns | 95A | 20V | 60V | 3.7V | 125W Tc | N-Channel | 4010pF @ 25V | 5.9m Ω @ 57A, 10V | 3.7V @ 100μA | 95A Tc | 110nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD9407-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd9407f085-datasheets-9305.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 29 Weeks | 260.37mg | 2 | ACTIVE (Last Updated: 1 day ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 1 | FET General Purpose Power | 27 ns | 48ns | 18 ns | 42 ns | 100A | 10V | SILICON | DRAIN | SWITCHING | 227W Tc | 171 mJ | 40V | N-Channel | 6390pF @ 25V | 2m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 112nC @ 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM480P06CH X0G | Taiwan Semiconductor Corporation | $6.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -50°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm480p06cprog-datasheets-9116.pdf | TO-251-3 Stub Leads, IPak | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 66W Tc | P-Channel | 1250pF @ 30V | 48m Ω @ 8A, 10V | 2.2V @ 250μA | 20A Tc | 22.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfd120pbf-datasheets-9316.pdf | 100V | 1.3A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 4 | 8 Weeks | Unknown | 270mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | Single | 1.3W | 1 | FET General Purpose Powers | 6.8 ns | 27ns | 27 ns | 18 ns | 1.3A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.3W Ta | 260 ns | 100V | N-Channel | 360pF @ 25V | 270m Ω @ 780mA, 10V | 4V @ 250μA | 1.3A Ta | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFU120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfu120pbf-datasheets-9324.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 270mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | 6.8 ns | 27ns | 17 ns | 18 ns | 7.7A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 100V | N-Channel | 360pF @ 25V | 4 V | 270m Ω @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD100N04S402ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-ipd100n04s402atma1-datasheets-9112.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 150W Tc | 100A | 400A | 0.002Ohm | 440 mJ | N-Channel | 9430pF @ 25V | 2m Ω @ 100A, 10V | 4V @ 95μA | 100A Tc | 118nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF630NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf630npbf-datasheets-9120.pdf | 200V | 9.3A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 300mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 82W | 1 | FET General Purpose Power | 7.9 ns | 14ns | 15 ns | 27 ns | 9.3A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 82W Tc | TO-220AB | 176 ns | 94 mJ | 200V | N-Channel | 575pF @ 25V | 4 V | 300m Ω @ 5.4A, 10V | 4V @ 250μA | 9.3A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRLB8721PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irlb8721pbf-datasheets-9128.pdf | TO-220-3 | 10.668mm | 9.02mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 8.7mOhm | 3 | EAR99 | Tin | No | Single | 65W | 1 | FET General Purpose Power | 9.1 ns | 93ns | 17 ns | 9 ns | 62A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.8V | 65W Tc | TO-220AB | 24 ns | 250A | 98 mJ | 30V | N-Channel | 1077pF @ 15V | 1.8 V | 8.7m Ω @ 31A, 10V | 2.35V @ 25μA | 62A Tc | 13nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FQP3P20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp3p20-datasheets-9141.pdf | -200V | -2.8A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 4 Weeks | No SVHC | 2.7Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 28A | e3 | Tin (Sn) | 200V | Single | 52W | 1 | Other Transistors | 8.5 ns | 35ns | 25 ns | 12 ns | 2.8A | 30V | SILICON | SWITCHING | -5V | 52W Tc | TO-220AB | -200V | P-Channel | 250pF @ 25V | 2.7 Ω @ 1.4A, 10V | 5V @ 250μA | 2.8A Tc | 8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFD014PBF | Vishay Siliconix | $1.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd014pbf-datasheets-8969.pdf | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 200mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 310pF | 10 ns | 50ns | 50 ns | 13 ns | 1.7A | 20V | 60V | 4V | 1.3W Ta | 140 ns | 200mOhm | 60V | N-Channel | 310pF @ 25V | 200mOhm @ 1A, 10V | 4V @ 250μA | 1.7A Ta | 11nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TSM680P06CH X0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm680p06chx0g-datasheets-8989.pdf | TO-251-3 Stub Leads, IPak | 20 Weeks | 60V | 20W Tc | P-Channel | 870pF @ 30V | 68m Ω @ 6A, 10V | 2.2V @ 250μA | 18A Tc | 16.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN4206AV | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn4206av-datasheets-8992.pdf | 60V | 600mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 1Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | 8 ns | 12ns | 12 ns | 12 ns | 600mA | 20V | SILICON | SWITCHING | 3V | 700mW Ta | 0.6A | 20 pF | 60V | N-Channel | 100pF @ 25V | 1 Ω @ 1.5A, 10V | 3V @ 1mA | 600mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDMC86184 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdmc86184-datasheets-8952.pdf | 8-PowerWDFN | 20 Weeks | 152.7mg | ACTIVE (Last Updated: 16 hours ago) | yes | Single | 100V | 54W Tc | N-Channel | 2090pF @ 50V | 8.5m Ω @ 21A, 10V | 4V @ 110μA | 57A Tc | 20nC @ 6V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ850EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sqj850ept1ge3-datasheets-8440.pdf | PowerPAK® SO-8 | 1.267mm | Lead Free | 12 Weeks | 506.605978mg | Unknown | 23mOhm | 8 | No | 1 | Single | 45W | 1 | 175°C | PowerPAK® SO-8 | 1.225nF | 21 ns | 15ns | 8 ns | 22 ns | 24A | 20V | 60V | 2V | 45W Tc | 19mOhm | 60V | N-Channel | 1225pF @ 30V | 2 V | 23mOhm @ 10.3A, 10V | 2.5V @ 250μA | 24A Tc | 30nC @ 10V | 23 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFU9024NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfu9024npbf-datasheets-9012.pdf | -60V | -1.6A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 175mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 38W | 1 | Other Transistors | 13 ns | 55ns | 37 ns | 23 ns | -11A | 20V | -55V | SILICON | DRAIN | SWITCHING | 55V | -4V | 38W Tc | 71 ns | 44A | 62 mJ | -55V | P-Channel | 350pF @ 25V | -4 V | 175m Ω @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI7114DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7114dnt1e3-datasheets-7743.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 7.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 45 ns | 18.3A | 20V | SILICON | DRAIN | SWITCHING | 30V | 1V | 1V | 1.5W Ta | 60A | 42 mJ | N-Channel | 1 V | 7.5m Ω @ 18.3A, 10V | 3V @ 250μA | 11.7A Ta | 19nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIR692DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir692dpt1re3-datasheets-8661.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 250V | 104W Tc | N-Channel | 1405pF @ 125V | 63m Ω @ 10A, 10V | 4V @ 250μA | 24.2A Tc | 30nC @ 7.5V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6242 | Alpha & Omega Semiconductor Inc. | $0.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 5 | 18 Weeks | 8 | EAR99 | DUAL | NOT SPECIFIED | NOT SPECIFIED | 83W | 1 | R-PDSO-F5 | 85A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.3W Ta 83W Tc | 240A | 0.0036Ohm | N-Channel | 6370pF @ 30V | 3.6m Ω @ 20A, 10V | 2.5V @ 250μA | 18.5A Ta 85A Tc | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN017-30PL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn01730pl127-datasheets-9074.pdf | TO-220-3 | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 45W | 1 | 10.7 ns | 9.2ns | 5.1 ns | 11.4 ns | 32A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45W Tc | TO-220AB | 152A | 30V | N-Channel | 552pF @ 15V | 17m Ω @ 10A, 10V | 2.15V @ 1mA | 32A Tc | 10.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RFD3055LE | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-rfd3055le-datasheets-9082.pdf | 60V | 11A | TO-251-3 Short Leads, IPak, TO-251AA | 6.8mm | 6.3mm | 2.5mm | Lead Free | 3 | 8 Weeks | 343.08mg | No SVHC | 107mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | Single | 38W | 1 | FET General Purpose Power | 8 ns | 105ns | 39 ns | 22 ns | 11A | 16V | SILICON | DRAIN | SWITCHING | 3V | 38W Tc | 66 ns | 60V | N-Channel | 350pF @ 25V | 3 V | 107m Ω @ 8A, 5V | 3V @ 250μA | 11A Tc | 11.3nC @ 10V | 5V | ±16V |
